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Zhixian Zhou - Publications

Affiliations: 
Physics Wayne State University, Detroit, MI, United States 
Area:
General Physics, Condensed Matter Physics
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Ornelas C, Bowman A, Walmsley T, Wang T, Andrews K, Zhou Z, Xu YQ. Ultrafast Photocurrent Response and High Detectivity in 2D MoSe2-based Heterojunctions. Acs Applied Materials & Interfaces. PMID 32867473 DOI: 10.1021/Acsami.0C12155  0.396
2020 Andrews K, Bowman A, Rijal U, Chen PY, Zhou Z. Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer. Acs Nano. PMID 32320204 DOI: 10.1021/Acsnano.0C02303  0.385
2019 Walmsley TS, Andrews K, Wang T, Haglund A, Rijal U, Bowman A, Mandrus D, Zhou Z, Xu YQ. Near-infrared optical transitions in PdSe phototransistors. Nanoscale. PMID 31334533 DOI: 10.1039/C9Nr03505B  0.372
2019 Gao Z, Zhou Z, Tomanek D. Degenerately Doped Transition Metal Dichalcogenides as Ohmic Homojunction Contacts to Transition Metal Dichalcogenide Semiconductors. Acs Nano. PMID 31038922 DOI: 10.1021/Acsnano.8B08190  0.335
2019 Luo X, Andrews K, Wang T, Bowman A, Zhou Z, Xu YQ. Reversible photo-induced doping in WSe field effect transistors. Nanoscale. PMID 30938719 DOI: 10.1039/C8Nr09929D  0.389
2018 Wang T, Andrews K, Bowman A, Hong T, Koehler M, Yan J, Mandrus D, Zhou Z, Xu YQ. High performance WSe2 phototransistors with 2D/2D ohmic contacts. Nano Letters. PMID 29614223 DOI: 10.1021/Acs.Nanolett.7B04205  0.366
2018 Walmsley TS, Chamlagain B, Rijal U, Wang T, Zhou Z, Xu Y. Gate‐Tunable Photoresponse Time in Black Phosphorus–MoS 2 Heterojunctions Advanced Optical Materials. 7: 1800832. DOI: 10.1002/Adom.201800832  0.345
2017 Miao J, Xu Z, Qing L, Bowman A, Zhang S, Hu W, Zhou Z, Wang C. Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors. Acs Nano. PMID 28926227 DOI: 10.1021/Acsnano.7B05755  0.371
2017 Shahini A, Jin H, Zhou Z, Zhao Y, Chen PY, Hua J, Cheng M. Toward individually tunable compound eyes with transparent graphene electrode. Bioinspiration & Biomimetics. PMID 28463225 DOI: 10.1088/1748-3190/Aa7084  0.314
2017 Guan J, Chuang HJ, Zhou Z, Tomanek D. Optimizing Charge Injection across Transition Metal Dichalcogenide Heterojunctions: Theory and Experiment. Acs Nano. PMID 28319662 DOI: 10.1021/Acsnano.7B00285  0.36
2017 Zhou Z, Yap Y. Two-Dimensional Electronics and Optoelectronics: Present and Future Electronics. 6: 53. DOI: 10.3390/Electronics6030053  0.367
2016 Cui Q, Sakhdari M, Chamlagain B, Chuang HJ, Liu Y, Cheng MM, Zhou Z, Chen PY. Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics. Acs Applied Materials & Interfaces. 8: 34552-34558. PMID 27998149 DOI: 10.1021/Acsami.6B11302  0.354
2016 Chuang HJ, Chamlagain B, Koehler M, Perera MM, Yan J, Mandrus D, Tománek D, Zhou Z. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors. Nano Letters. 16: 1896-902. PMID 26844954 DOI: 10.1021/Acs.Nanolett.5B05066  0.365
2016 Shahini A, Xia J, Zhou Z, Zhao Y, Cheng MM. Versatile Miniature Tunable Liquid Lenses Using Transparent Graphene Electrodes. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 26800762 DOI: 10.1021/Acs.Langmuir.5B03407  0.327
2015 Hong T, Chamlagain B, Wang T, Chuang HJ, Zhou Z, Xu YQ. Anisotropic photocurrent response at black phosphorus-MoS2 p-n heterojunctions. Nanoscale. PMID 26489362 DOI: 10.1039/C5Nr03400K  0.333
2015 Hong T, Chamlagain B, Hu S, Weiss SM, Zhou Z, Xu YQ. Plasmonic Hot Electron Induced Photocurrent Response at MoS2-Metal Junctions. Acs Nano. 9: 5357-63. PMID 25871507 DOI: 10.1021/Acsnano.5B01065  0.315
2014 Hong T, Chamlagain B, Lin W, Chuang HJ, Pan M, Zhou Z, Xu YQ. Polarized photocurrent response in black phosphorus field-effect transistors. Nanoscale. 6: 8978-83. PMID 24967826 DOI: 10.1039/C4Nr02164A  0.34
2014 Chuang HJ, Tan X, Ghimire NJ, Perera MM, Chamlagain B, Cheng MM, Yan J, Mandrus D, Tománek D, Zhou Z. High mobility WSe2 p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts. Nano Letters. 14: 3594-601. PMID 24844426 DOI: 10.1021/Nl501275P  0.445
2014 Chamlagain B, Li Q, Ghimire NJ, Chuang HJ, Perera MM, Tu H, Xu Y, Pan M, Xiao D, Xaio D, Yan J, Mandrus D, Zhou Z. Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate. Acs Nano. 8: 5079-88. PMID 24730685 DOI: 10.1021/Nn501150R  0.383
2014 Chamlagain B, Li Q, Ghimire NJ, Chuang HJ, Perera MM, Tu H, Xu Y, Pan M, Xiao D, Yan J, Mandrus D, Zhou Z. Correction to Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate Acs Nano. 8: 8710-8710. DOI: 10.1021/Nn503807D  0.311
2013 Perera MM, Lin MW, Chuang HJ, Chamlagain BP, Wang C, Tan X, Cheng MM, Tománek D, Zhou Z. Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating. Acs Nano. 7: 4449-58. PMID 23590723 DOI: 10.1021/Nn401053G  0.513
2013 Tan X, Chuang HJ, Lin MW, Zhou Z, Cheng MMC. Edge Effects on the pH Response of Graphene Nanoribbon Field Effect Transistors Journal of Physical Chemistry C. 117: 27155-27160. DOI: 10.1021/Jp409116R  0.349
2012 Tan X, Zhou Z, Cheng MM. Electrowetting on dielectric experiments using graphene. Nanotechnology. 23: 375501. PMID 22922499 DOI: 10.1088/0957-4484/23/37/375501  0.367
2012 Setzler G, Chamath LKKD, Kim S, Yoon HJ, Cheng MM, Zhou Z. Preparation and characterization of graphene nanoribbons Bulletin of the American Physical Society. 23: 139-143. DOI: 10.13538/J.1001-8042/Nst.23.139-143  0.357
2012 Lin MW, Liu L, Lan Q, Tan X, Dhindsa KS, Zeng P, Naik VM, Cheng MMC, Zhou Z. Mobility enhancement and highly efficient gating of monolayer MoS 2 transistors with polymer electrolyte Journal of Physics D. 45: 345102. DOI: 10.1088/0022-3727/45/34/345102  0.378
2011 Ling C, Setzler G, Lin MW, Dhindsa KS, Jin J, Yoon HJ, Kim SS, Ming-Cheng Cheng M, Widjaja N, Zhou Z. Electrical transport properties of graphene nanoribbons produced from sonicating graphite in solution. Nanotechnology. 22: 325201. PMID 21757795 DOI: 10.1088/0957-4484/22/32/325201  0.524
2011 Lin MW, Ling C, Zhang Y, Yoon HJ, Cheng MM, Agapito LA, Kioussis N, Widjaja N, Zhou Z. Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors. Nanotechnology. 22: 265201. PMID 21576804 DOI: 10.1088/0957-4484/22/26/265201  0.556
2011 Lin MW, Ling C, Agapito LA, Kioussis N, Zhang Y, Cheng MMC, Wang WL, Kaxiras E, Zhou Z. Approaching the intrinsic band gap in suspended high-mobility graphene nanoribbons Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.125411  0.369
2011 Yoon HJ, Jun DH, Yang JH, Zhou Z, Yang SS, Cheng MMC. Carbon dioxide gas sensor using a graphene sheet Sensors and Actuators B-Chemical. 157: 310-313. DOI: 10.1016/J.Snb.2011.03.035  0.304
2009 Zhou Z, Eres G, Jin R, Subedi A, Mandrus D, Kim EH. The performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors. Nanotechnology. 20: 085709. PMID 19417470 DOI: 10.1088/0957-4484/20/8/085709  0.363
2007 Zhou Z, Xiao K, Jin R, Mandrus D, Tao J, Geohegan DB, Pennycook S. One-dimensional electron transport in Cu-tetracyanoquinodimethane organic nanowires Applied Physics Letters. 90: 193115. DOI: 10.1063/1.2738380  0.331
2006 Zhou Z, Jin R, Eres G, Subedi A, Mandrus D. Control of electron transport related defects in in situ fabricated single wall carbon nanotube devices Applied Physics Letters. 89. DOI: 10.1063/1.2354450  0.312
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