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Krishna C. Mandal - Publications

Affiliations: 
Electrical Engineering University of South Carolina, Columbia, SC 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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Year Citation  Score
2023 Mandal KC, Chaudhuri SK, Nag R. High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications. Micromachines. 14. PMID 37630068 DOI: 10.3390/mi14081532  0.302
2020 Mandal KC, Kleppinger JW, Chaudhuri SK. Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices. Micromachines. 11. PMID 32121162 DOI: 10.3390/Mi11030254  0.413
2020 Sajjad M, Chaudhuri SK, Kleppinger JW, Mandal KC. Growth of Large-Area Cd₀.₉Zn₀.₁Te Single Crystals and Fabrication of Pixelated Guard-Ring Detector for Room-Temperature γ-Ray Detection Ieee Transactions On Nuclear Science. 67: 1946-1951. DOI: 10.1109/Tns.2020.3007379  0.515
2020 Chaudhuri SK, Sajjad M, Kleppinger JW, Mandal KC. Correlation of Space Charge Limited Current and γ-Ray Response of Cd x Zn 1-x Te 1-y Se y Room-Temperature Radiation Detectors Ieee Electron Device Letters. 41: 1336-1339. DOI: 10.1109/Led.2020.3013800  0.45
2020 Chaudhuri SK, Kleppinger JW, Mandal KC. Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects Journal of Applied Physics. 128: 114501. DOI: 10.1063/5.0021403  0.501
2020 Chaudhuri SK, Sajjad M, Kleppinger JW, Mandal KC. Charge transport properties in CdZnTeSe semiconductor room-temperature γ-ray detectors Journal of Applied Physics. 127: 245706. DOI: 10.1063/5.0006227  0.442
2020 Chaudhuri SK, Sajjad M, Mandal KC. Pulse-shape analysis in Cd0.9Zn0.1Te0.98Se0.02 room-temperature radiation detectors Applied Physics Letters. 116: 162107. DOI: 10.1063/5.0003646  0.378
2017 Das AC, Bhattacharya S, Jewariya M, Prabhu SS, Mandal KC, Ozaki T, Datta PK. Identification of Combination Phonon Modes in Pure and Doped GaSe Crystals by THz Spectroscopy Ieee Journal of Selected Topics in Quantum Electronics. 23: 1-7. DOI: 10.1109/Jstqe.2017.2676041  0.311
2017 Samanta P, Mandal KC. Leakage current conduction, hole injection, and time-dependent dielectric breakdown ofn-4H-SiC MOS capacitors during positive bias temperature stress Journal of Applied Physics. 121: 034501. DOI: 10.1063/1.4973674  0.431
2016 Nguyen KV, Mandal KC. Ru-induced deep levels in Ru/4H-SiC epilayer Schottky diodes by deep level transient spectroscopy Ecs Journal of Solid State Science and Technology. 5: P3078-P3081. DOI: 10.1149/2.0131604Jss  0.327
2016 Das S, Chaudhuri SK, Mandal KC. Deep level studies in high-resistive gallium phosphide single crystals Ecs Journal of Solid State Science and Technology. 5: P3059-P3063. DOI: 10.1149/2.0101604Jss  0.376
2016 Pak RO, Mandal KC. Defect levels in nuclear detector grade Cd0.9Zn0.1Te crystals Ecs Journal of Solid State Science and Technology. 5: P3037-P3040. DOI: 10.1149/2.0091604Jss  0.535
2016 Samanta P, Mandal KC. Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC Proceedings of Spie. 9968. DOI: 10.1117/12.2238875  0.437
2016 Oner C, Chowdhury TA, Pak RO, Mandal KC. Improved radiation detectors on 4H-SiC epilayers by edge termination Proceedings of Spie. 9968. DOI: 10.1117/12.2238874  0.418
2016 Das AC, Bhattacharya S, Mandal KC, Mondal S, Jewariya M, Ozaki T, Bhaktha SNB, Datta PK. Dielectric response of pure and doped-GaSe crystals studied by an indigenously developed broadband THz-TDS system Proceedings of Spie - the International Society For Optical Engineering. 9894. DOI: 10.1117/12.2227357  0.382
2016 Schmidtlein CR, Turner JN, Thompson MO, Mandal KC, Häggström I, Zhang J, Humm JL, Feiglin DH, Krol A. Performance modeling of a wearable brain PET (BET) camera Progress in Biomedical Optics and Imaging - Proceedings of Spie. 9788. DOI: 10.1117/12.2217020  0.34
2016 Mannan MA, Nguyen KV, Pak RO, Oner C, Mandal KC. Deep Levels in n-Type 4H-Silicon Carbide Epitaxial Layers Investigated by Deep-Level Transient Spectroscopy and Isochronal Annealing Studies Ieee Transactions On Nuclear Science. 63: 1083-1090. DOI: 10.1109/Tns.2016.2535212  0.414
2016 Mannan MA, Nguyen KV, Mandal KC. Isochronal annealing on n-type 4H-SiC epitaxial schottky barriers and investigation of defect levels by deep level transient spectroscopy 2014 Ieee Nuclear Science Symposium and Medical Imaging Conference, Nss/Mic 2014. DOI: 10.1109/NSSMIC.2014.7431286  0.364
2016 Nguyen KV, Mannan MA, Mandal KC. Deep levels in n-type 4H-SiC epitaxial Schottky detectors by deep level transient spectroscopy and effects of edge termination on energy resolution 2014 Ieee Nuclear Science Symposium and Medical Imaging Conference, Nss/Mic 2014. DOI: 10.1109/NSSMIC.2014.7431263  0.405
2016 Tang Y, Mandal KC, McGuire JA, Lai CW. Layer- and frequency-dependent second harmonic generation in reflection from GaSe atomic crystals Physical Review B. 94. DOI: 10.1103/Physrevb.94.125302  0.334
2016 Samanta P, Mandal KC. Simulation of temperature dependent dielectric breakdown in n +-polySi/SiO2/ n -6H-SiC structures during Poole-Frenkel stress at positive gate bias Journal of Applied Physics. 120. DOI: 10.1063/1.4960579  0.433
2016 Das S, Bhattacharya RN, Mandal KC. Performance limiting factors of Cu2ZnSn(SxSe1-x)4 solar cells prepared by thermal evaporation Solar Energy Materials and Solar Cells. 144: 347-351. DOI: 10.1016/J.Solmat.2015.09.012  0.358
2015 Nguyen KV, Pak RO, Oner C, Mannan MA, Mandal KC. High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS) Proceedings of Spie - the International Society For Optical Engineering. 9593. DOI: 10.1117/12.2196592  0.504
2015 Pak RO, Nguyen KV, Oner C, Mannan MA, Mandal KC. Defect characterization of Cd0.9Zn0.1Te crystals using electron beam induced current (EBIC) imaging and thermally stimulated current (TSC) measurements Proceedings of Spie - the International Society For Optical Engineering. 9593. DOI: 10.1117/12.2196590  0.531
2015 Oner C, Nguyen KV, Pak RO, Mannan MA, Mandal KC. Investigation of thermally evaporated high resistive B-doped amorphous selenium alloy films and metal contact studies Proceedings of Spie - the International Society For Optical Engineering. 9593. DOI: 10.1117/12.2196586  0.401
2015 Mannan MA, Nguyen KV, Pak R, Oner C, Mandal KC. Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer Proceedings of Spie - the International Society For Optical Engineering. 9593. DOI: 10.1117/12.2196582  0.508
2015 Nguyen KV, Mannan MA, Mandal KC. Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination Ieee Transactions On Nuclear Science. 62: 3199-3206. DOI: 10.1109/Tns.2015.2496902  0.492
2015 Samanta P, Mandal KC. Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling Solid-State Electronics. 114: 60-68. DOI: 10.1016/J.Sse.2015.07.009  0.402
2014 Nguyen KV, Chaudhuri SK, Mandal KC. Investigation of low leakage current radiation detectors on n-type 4H-SiC epitaxial layers Proceedings of Spie - the International Society For Optical Engineering. 9213. DOI: 10.1117/12.2063055  0.515
2014 Mandal KC, Krishna RM, Pak RO, Mannan MA. Characterization of high-resistivity CdTe and Cd0.9Zn0.1Te crystals grown by Bridgman method for radiation detector applications Proceedings of Spie - the International Society For Optical Engineering. 9213. DOI: 10.1117/12.2063054  0.742
2014 Mandal KC, Chaudhuri SK, Nguyen KV, Mannan MA. Correlation of deep levels with detector performance in 4H-SiC epitaxial schottky barrier alpha detectors Ieee Transactions On Nuclear Science. 61: 2338-2344. DOI: 10.1109/Tns.2014.2335736  0.478
2014 Chaudhuri SK, Nguyen K, Pak RO, Matei L, Buliga V, Groza M, Burger A, Mandal KC. Large Area Cd0.9 Zn0.1 pixelated detector: Fabrication and characterization Ieee Transactions On Nuclear Science. 61: 793-798. DOI: 10.1109/Tns.2014.2307861  0.544
2014 Mannan MA, Chaudhuri SK, Nguyen KV, Mandal KC. Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies Journal of Applied Physics. 115. DOI: 10.1063/1.4883317  0.428
2014 Das S, Chaudhuri SK, Bhattacharya RN, Mandal KC. Defect levels in Cu2ZnSn(SxSe1-x) 4 solar cells probed by current-mode deep level transient spectroscopy Applied Physics Letters. 104. DOI: 10.1063/1.4876925  0.338
2014 Das S, Mandal KC. Growth and characterization of kesterite Cu2ZnSn(S xSe1 - X)4 crystals for photovoltaic applications Materials Research Bulletin. 57: 135-139. DOI: 10.1016/J.Materresbull.2014.04.073  0.448
2013 Das S, Mandal KC. Optical down-conversion in doped ZnSe:Tb3+ nanocrystals. Nanoscale. 5: 913-5. PMID 23254368 DOI: 10.1039/C2Nr33243D  0.309
2013 Das S, Mandal KC. Cu2ZnSnSe4 photovoltaic absorber grown by vertical gradient freeze technique Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.125502  0.466
2013 Zavalla KJ, Chaudhuri SK, Mandal KC. Fabrication of high-resolution nuclear detectors using 4H-SiC n-type Epitaxial layers Materials Research Society Symposium Proceedings. 1576. DOI: 10.1557/opl.2013.1195  0.374
2013 Chaudhuri SK, Zavalla KJ, Krishna RM, Mandal KC. Gamma ray detection with Cd0.9Zn0.1te based detectors grown using a te solvent method Materials Research Society Symposium Proceedings. 1576. DOI: 10.1557/opl.2013.1153  0.729
2013 Das S, Zavalla KJ, Mannan MA, Mandal KC. Fabrication and characterization of low-cost, Large-area spray deposited Cu2ZnSnS4 thin films for heterojunction solar cells Materials Research Society Symposium Proceedings. 1538: 115-121. DOI: 10.1557/Opl.2013.1001  0.371
2013 Zavalla KJ, Chaudhuri SK, Mandal KC. Fabrication of high resolution n-type 4H-SiC epitaxial layer alpha particle detectors, defect characterization and electronic noise analysis Proceedings of Spie - the International Society For Optical Engineering. 8852. DOI: 10.1117/12.2027142  0.464
2013 Mandal KC, Mehta A, Chaudhuri SK, Cui Y, Groza M, Burger A. Characterization of amorphous selenium alloy detectors for x-rays and high energy nuclear radiation detection Proceedings of Spie - the International Society For Optical Engineering. 8852. DOI: 10.1117/12.2027139  0.396
2013 Mandal KC, Muzykov PG, Chaudhuri SK, Terry JR. Low energy X-ray and γ-ray detectors fabricated on n-type 4H-SiC epitaxial layer Ieee Transactions On Nuclear Science. 60: 2888-2893. DOI: 10.1109/Tns.2013.2273673  0.531
2013 Chaudhuri SK, Krishna RM, Zavalla KJ, Matei L, Buliga V, Groza M, Burger A, Mandal KC. Cd0.9 Zn$0.1 te crystal growth and fabrication of large volume single-polarity charge sensing gamma detectors Ieee Transactions On Nuclear Science. 60: 2853-2858. DOI: 10.1109/Tns.2013.2270289  0.748
2013 Mandal KC, Chaudhuri SK, Nguyen K. An overview of application of 4H-SiC n-type epitaxial Schottky barrier detector for high resolution nuclear detection Ieee Nuclear Science Symposium Conference Record. DOI: 10.1109/NSSMIC.2013.6829844  0.344
2013 Chaudhuri SK, Nguyen K, Pak RO, Matei L, Buliga V, Groza M, Burger A, Mandal KC. Fabrication and characterization of large area Cd0.9Zn 0.1Te guarded pixelated detector Ieee Nuclear Science Symposium Conference Record. DOI: 10.1109/NSSMIC.2013.6829827  0.476
2013 Chaudhuri SK, Zavalla KJ, Krishna RM, Mandal KC. Biparametric analyses of charge trapping in Cd0.9Zn 0.1Te based virtual Frisch grid detectors Journal of Applied Physics. 113. DOI: 10.1063/1.4793268  0.728
2013 Chaudhuri SK, Zavalla KJ, Mandal KC. Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach Applied Physics Letters. 102. DOI: 10.1063/1.4776703  0.368
2013 Chaudhuri SK, Zavalla KJ, Mandal KC. High resolution alpha particle detection using 4H-SiC epitaxial layers: Fabrication, characterization, and noise analysis Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 728: 97-101. DOI: 10.1016/J.Nima.2013.06.076  0.467
2013 Chaudhuri SK, Krishna RM, Zavalla KJ, Mandal KC. Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 701: 214-220. DOI: 10.1016/J.Nima.2012.11.015  0.686
2013 Krishna RM, Chaudhuri SK, Zavalla KJ, Mandal KC. Characterization of Cd 0.9Zn 0.1Te based virtual Frisch grid detectors for high energy gamma ray detection Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 701: 208-213. DOI: 10.1016/J.Nima.2012.10.131  0.737
2013 Krishna RM, Muzykov PG, Mandal KC. Electron beam induced current imaging of dislocations in Cd 0.9Zn 0.1Te crystal Journal of Physics and Chemistry of Solids. 74: 170-173. DOI: 10.1016/J.Jpcs.2012.09.002  0.699
2013 Das S, Krishna RM, Ma S, Mandal KC. Single phase polycrystalline Cu2ZnSnS4 grown by vertical gradient freeze technique Journal of Crystal Growth. 381: 148-152. DOI: 10.1016/J.Jcrysgro.2013.07.022  0.677
2012 Das S, Mandal KC. Fabrication of improved p-AgGaSe 2/n-Si heterojunction solar cells on optimum quality thermally evaporated AgGaSe 2 thin films Materials Research Society Symposium Proceedings. 1323: 151-156. DOI: 10.1557/Opl.2011.958  0.355
2012 Krishna RM, Hayes TC, Muzykov PG, Mandal KC. Low temperature crystal growth and characterization of Cd 0.9Zn 0.1Te for radiation detection applications Materials Research Society Symposium Proceedings. 1341: 39-44. DOI: 10.1557/Opl.2011.1479  0.726
2012 Mandal KC, Muzykov PG, Terry JR. Design, fabrication, characterization, and evaluation of X-ray detectors based on n-type 4H-SiC epitaxial layer Ecs Transactions. 45: 27-33. DOI: 10.1149/1.3701522  0.411
2012 Chaudhuri SK, Krishna RM, Zavalla KJ, Mandal KC. High energy γ-ray detection using CZT detectors with virtual Frisch grid Proceedings of Spie. 8507. DOI: 10.1117/12.946027  0.728
2012 Mandal KC, Muzykov PG, Chaudhuri SK, Terry JR. Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 8507. DOI: 10.1117/12.946026  0.584
2012 Mandal KC, Muzykov PG, Krishna RM, Terry JR. Characterization of 4H-SiC epitaxial layers and high-resistivity bulk crystals for radiation detectors Ieee Transactions On Nuclear Science. 59: 1591-1596. DOI: 10.1109/Tns.2012.2202916  0.733
2012 Mandal KC, Krishna RM, Muzykov PG, Hayes TC. Fabrication and characterization of Cd 0.9Zn 0.1Te schottky diodes for high resolution nuclear radiation detectors Ieee Transactions On Nuclear Science. 59: 1504-1509. DOI: 10.1109/Tns.2012.2202324  0.753
2012 Chaudhuri SK, Krishna RM, Zavalla KJ, Matei L, Buliga V, Groza M, Burger A, Mandal KC. Performance of Cd0.9Zn0.1Te based high-energy gamma detectors in various single polarity sensing device geometries Ieee Nuclear Science Symposium Conference Record. 4266-4270. DOI: 10.1109/NSSMIC.2012.6551973  0.742
2012 Mandal KC, Muzykov PG, Chaudhuri SK, Terry JR. High-resolution x- and γ-ray detection using 4H-SiC n-type epitaxial layer Ieee Nuclear Science Symposium Conference Record. 4216-4221. DOI: 10.1109/NSSMIC.2012.6551961  0.426
2012 Mandal KC, Muzykov PG, Krishna RM, Hayes TC. Characterization of Cd 0.9Zn 0.1Te Schottky diodes for high resolution nuclear radiation detectors Ieee Nuclear Science Symposium Conference Record. 4578-4583. DOI: 10.1109/NSSMIC.2011.6154738  0.733
2012 Mandal KC, Muzykov PG, Krishna RM, Hayes TC. Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications Ieee Nuclear Science Symposium Conference Record. 4776-4782. DOI: 10.1109/NSSMIC.2011.6154713  0.709
2012 Mandal KC, Muzykov PG, Russell Terry J. Publisher’s Note: “Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers” [Appl. Phys. Lett. 101, 051111 (2012)] Applied Physics Letters. 101: 099901. DOI: 10.1063/1.4748860  0.416
2012 Mandal KC, Muzykov PG, Russell Terry J. Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers Applied Physics Letters. 101. DOI: 10.1063/1.4742741  0.484
2012 Muzykov PG, Krishna RM, Mandal KC. Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer Applied Physics Letters. 100. DOI: 10.1063/1.3676270  0.69
2012 Muzykov PG, Krishna RM, Mandal KC. Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy Journal of Applied Physics. 111. DOI: 10.1063/1.3675513  0.69
2012 Krishna RM, Hayes TC, Krementz D, Weeks G, Torres AM, Brinkman K, Mandal KC. Characterization of transparent conducting oxide thin films deposited on ceramic substrates Materials Letters. 66: 233-235. DOI: 10.1016/J.Matlet.2011.08.066  0.632
2012 Das S, Mandal KC. Optical downconversion in rare earth (Tb 3+ and Yb 3+) doped CdS nanocrystals Materials Letters. 66: 46-49. DOI: 10.1016/J.Matlet.2011.08.034  0.358
2011 Das S, Mandal KC. Synthesis and characterization of rare earth (Tb 3+and Yb 3+) doped CdS/ZnS core/shell nanocrystals for enhanced photovoltaic efficiency Materials Research Society Symposium Proceedings. 1322: 75-81. DOI: 10.1557/Opl.2011.1293  0.386
2011 Mandal KC, Muzykov PG, Krishna RM, Hayes TC. Fabrication and characterization of Cd0.9Zn0.1Te Schottky diodes for nuclear radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 8142. DOI: 10.1117/12.896640  0.747
2011 Mandal KC, Muzykov PG, Krishna RM, Hayes TC. Surface and defect correlation studies on high resistivity 4H SiC bulk crystals and epitaxial layers for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 8142. DOI: 10.1117/12.896637  0.724
2011 Mandal KC, Krishna RM, Muzykov PG, Das S, Sudarshan TS. Characterization of semi-insulating 4H silicon carbide for radiation detectors Ieee Transactions On Nuclear Science. 58: 1992-1999. DOI: 10.1109/Tns.2011.2152857  0.765
2011 Mandal KC, Krishna RM, Hayes TC, Muzykov PG, Das S, Sudarshan TS, Ma S. Layered GaTe crystals for radiation detectors Ieee Transactions On Nuclear Science. 58: 1981-1986. DOI: 10.1109/Tns.2011.2140330  0.731
2011 Xu G, Sun G, Ding YJ, Zotova IB, Mandal KC, Mertiri A, Pabst G, Roy R, Fernelius NC. Investigation of Terahertz generation due to unidirectional diffusion of carriers in centrosymmetric GaTe crystals Ieee Journal On Selected Topics in Quantum Electronics. 17: 30-37. DOI: 10.1109/Jstqe.2010.2046628  0.363
2011 Mandal KC, Muzykov PG, Krishna R, Hayes T, Sudarshan TS. Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide Solid State Communications. 151: 532-535. DOI: 10.1016/J.Ssc.2011.01.019  0.71
2011 Xu G, Sun G, Ding YJ, Zotova IB, Mandal KC, Mertiri A, Pabst G, Fernelius N. Investigation of symmetries of second-order nonlinear susceptibility tensor of GaSe crystals in THz domain Optics Communications. 284: 2027-2030. DOI: 10.1016/J.Optcom.2010.12.025  0.363
2011 Muzykov PG, Krishna R, Das S, Hayes T, Sudarshan TS, Mandal KC. Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current Materials Letters. 65: 911-914. DOI: 10.1016/J.Matlet.2010.11.074  0.723
2010 Mandal KC, Das S, Krishna R, Muzykov PG, Ma S, Zhao F. Surface passivation of p-GaTe layered crystals for improved p-GaTe/n-InSe heterojunction solar cells Materials Research Society Symposium Proceedings. 1268: 77-82. DOI: 10.1557/Proc-1268-Ee02-10  0.716
2010 Mandal KC, Krishna R, Muzykov PG, Laney Z, Das S, Sudarshan TS. Radiation detectors based on 4H semi-insulating silicon carbide Proceedings of Spie - the International Society For Optical Engineering. 7805. DOI: 10.1117/12.863572  0.743
2010 Mandal KC, Hayes T, Muzykov PG, Krishna R, Das S, Sudarshan TS, Ma S. Characterization of gallium telluride crystals grown from graphite crucible Proceedings of Spie - the International Society For Optical Engineering. 7805. DOI: 10.1117/12.863570  0.732
2010 Mandal KC, Muzykov PG, Krishna RM, Das S, Sudarshan TS. Characterization of 4H semi-insulating silicon carbide for radiation detector applications Ieee Nuclear Science Symposium Conference Record. 3725-3731. DOI: 10.1109/NSSMIC.2010.5874508  0.743
2010 Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Doping dependence of electronic and mechanical properties of GaSe 1-xTex and Ga1-xInxSe from first principles Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.155203  0.349
2010 Rák Z, Mahanti SD, Mandal KC, Fernelius NC. Defect-induced rigidity enhancement in layered semiconductors Solid State Communications. 150: 1200-1203. DOI: 10.1016/J.Ssc.2010.04.011  0.357
2010 Nelson AJ, Laurence TA, Conway AM, Behymer EM, Sturm BW, Voss LF, Nikolic RJ, Payne SA, Mertiri A, Pabst G, Mandal KC, Burger A. Spectroscopic investigation of (NH4)2S treated GaSeTe for radiation detector applications Materials Letters. 64: 393-395. DOI: 10.1016/J.Matlet.2009.11.027  0.366
2009 Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Theoretical studies of defect states in GaTe. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 015504. PMID 21817225 DOI: 10.1088/0953-8984/21/1/015504  0.334
2009 Liu J, Mandal KC, Koley G. Investigation of nanoscale electronic properties of CdZnTe crystals by scanning spreading resistance microscopy Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/4/045012  0.449
2009 Nelson AJ, Conway AM, Sturm BW, Behymer EM, Reinhardt CE, Nikolic RJ, Payne SA, Pabst G, Mandal KC. X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications Journal of Applied Physics. 106. DOI: 10.1063/1.3176478  0.354
2009 Cui Y, Caudel DD, Bhattacharya P, Burger A, Mandal KC, Johnstone D, Payne SA. Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence Journal of Applied Physics. 105. DOI: 10.1063/1.3080157  0.47
2009 Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Electronic structure of substitutional defects and vacancies in GaSe Journal of Physics and Chemistry of Solids. 70: 344-355. DOI: 10.1016/J.Jpcs.2008.10.022  0.325
2009 Rak Z, Mahanti SD, Mandal KC. Ab initio studies of hydrogen defects in cdte Journal of Electronic Materials. 38: 1539-1547. DOI: 10.1007/S11664-009-0751-1  0.321
2008 Mandal KC, Kang SH, Choi M, Rauh RD. Rare-earth doped potassium lead bromide mid-IR laser sources for standoff detection International Journal of High Speed Electronics and Systems. 18: 735-745. DOI: 10.1142/S0129156408005709  0.375
2008 Liu J, Mandal KC, Koley G. Investigation of CdZnTe crystal defects using scanning spreading resistance microscopy Proceedings of Spie - the International Society For Optical Engineering. 7079. DOI: 10.1117/12.796253  0.421
2008 Mandal KC, Mertiri A, Pabst GW, Roy RG, Cui Y, Battacharya P, Groza M, Burger A, Conway AM, Nikolic RJ, Nelson AJ, Payne SA. Layered III-VI chalcogenide semiconductor crystals for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 7079. DOI: 10.1117/12.796235  0.516
2008 Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Theoretical studies of defects states in GaSe and GaTe Proceedings of Spie - the International Society For Optical Engineering. 7079. DOI: 10.1117/12.796229  0.318
2008 Mandal KC, Kang SH, Choi M, Chen J, Zhang XC, Schleicher JM, Schmuttenmaer CA, Fernelius NC. III-VI chalcogenide semiconductor crystals for broadband tunable THz sources and sensors Ieee Journal On Selected Topics in Quantum Electronics. 14: 284-288. DOI: 10.1109/Jstqe.2007.912767  0.471
2008 Cui Y, Dupere R, Burger A, Johnstone D, Mandal KC, Payne SA. Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence Journal of Applied Physics. 103. DOI: 10.1063/1.2831130  0.467
2007 Mandal K, Kang SH, Choi M, Mertiri A, Pabst GW, Noblitt C. Crystal Growth and Characterization of CdTe and Cd 0.9 Zn 0.1 Te for Nuclear Radiation Detectors Mrs Proceedings. 1038: 39-49. DOI: 10.1557/Proc-1038-O04-02  0.502
2007 Rak Z, Mahanti SD, Mandal KC, Fernelius NC. Electronic structure of Cd, In, Sn substitutional defects in GaSe Materials Research Society Symposium Proceedings. 994: 73-78. DOI: 10.1557/Proc-0994-F03-10  0.341
2007 Mandal KC, Kang SH, Choi MK. Layered compound semiconductor GaSe and GaTe crystals for THz applications Materials Research Society Symposium Proceedings. 969: 111-116. DOI: 10.1557/Proc-0969-W03-15  0.478
2007 Mandal KC, Choi M, Kang SH, Rauh RD, Wei J, Zhang H, Zheng L, Cui Y, Groza M, Burger A. GaSe and GaTe anisotropic layered semiconductors for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 6706. DOI: 10.1117/12.739399  0.558
2007 Mandal KC, Kang SH, Choi M, Kargar A, Harrison MJ, McGregor DS, Bolotnikov AE, Carini GA, Camarda GC, James RB. Characterization of low-defect Cd0.9Zn0.1Te and CdTe crystals for high-performance frisch collar detectors Ieee Transactions On Nuclear Science. 54: 802-806. DOI: 10.1109/Tns.2007.902371  0.524
2007 Koley G, Liu J, Mandal KC. Investigation of CdZnTe crystal defects using scanning probe microscopy Applied Physics Letters. 90. DOI: 10.1063/1.2712496  0.414
2007 Mandal KC, Kang SH, Choi M, Wei J, Zheng L, Zhang H, Jellison GE, Groza M, Burger A. Component overpressure growth and characterization of high-resistivity CdTe crystals for radiation detectors Journal of Electronic Materials. 36: 1013-1020. DOI: 10.1007/S11664-007-0164-Y  0.492
2007 Mandal KC, Kang SH, Choi M, Mertiri A, Pabst GW, Noblitt C. Crystal growth and characterization of cdte and Cd o.9Zn o.1Te for nuclear radiation detectors Materials Research Society Symposium Proceedings. 1038: 39-50.  0.425
2006 Yu BL, Altan H, Zeng F, Kartazayev V, Alfano R, Mandal KC. Terahertz Resonances in the Dielectric Response Due to Second Order Phonons in a GaSe Crystal Mrs Proceedings. 935. DOI: 10.1557/Proc-0935-K03-08  0.324
2006 Mandal KC, Sung HK, Choi M, Jellison GE. Amorphous selenium based detectors for medical imaging applications Proceedings of Spie - the International Society For Optical Engineering. 6319. DOI: 10.1117/12.683817  0.369
2006 Mandal KC, Kang SH, Choi M, Wright G, Jellison GE. CdTe and Cd 0.9Zn 0.1Te crystal growth and characterization for nuclear spectrometers Proceedings of Spie - the International Society For Optical Engineering. 6319. DOI: 10.1117/12.683802  0.535
2006 Mandal KC, Kang SH, Choi M, Bello J, Zheng L, Zhang H, Groza M, Roy UN, Burger A, Jellison GE, Holcomb DE, Wright GW, Williams JA. Simulation, modeling, and crystal growth of Cd 0.9Zn 0.1Te for nuclear spectrometers Journal of Electronic Materials. 35: 1251-1256. DOI: 10.1007/S11664-006-0250-6  0.526
2005 Yu BL, Zeng F, Kartazayev V, Alfano RR, Mandal KC. Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2093944  0.341
2005 Mandal KC, Noblitt C, Choi M, Smirnov A, Rauh RD. Crystal growth, characterization and anisotropic electrical properties of GaSe single crystals for THz source and radiation detector applications Aip Conference Proceedings. 772: 159-160. DOI: 10.1063/1.1994042  0.385
2005 Roy UN, Hawrami RH, Cui Y, Morgan S, Burger A, Mandal KC, Noblitt CC, Speakman SA, Rademaker K, Payne SA. Tb3+ -doped K Pb2 Br5: Low-energy phonon mid-infrared laser crystal Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1901815  0.439
2004 Mandal KC, Choi M, Noblitt C, David Rauh R. Progress in Producing Large Area Flexible Dye Sensitized Solar Cells Mrs Proceedings. 836. DOI: 10.1557/Proc-836-L1.2  0.308
2004 Rademaker K, Krupke WF, Page RH, Payne SA, Petermann K, Huber G, Yelisseyev AP, Isaenko LI, Roy UN, Burger A, Mandal KC, Nitsch K. Optical properties of Nd3+- and Tb3+-doped KPb 2Br5 and RbPb2Br5 with low nonradiative decay Journal of the Optical Society of America B: Optical Physics. 21: 2117-2129. DOI: 10.1364/Josab.21.002117  0.378
2004 Mandal KC, Noblitt C, Choi M, Rauh RD, Roy UN, Groza M, Burger A, Holcomb DE, Jellison GE. Crystal growth, characterization and testing of Cd 0.9Zn 0.1Te single crystals for radiation detectors Proceedings of Spie - the International Society For Optical Engineering. 5540: 186-195. DOI: 10.1117/12.566936  0.414
2004 Ma R, Zhang H, Larson DJ, Mandal KC. Dynamics of melt-crystal interface and thermal stresses in rotational Bridgman crystal growth process Journal of Crystal Growth. 266: 216-223. DOI: 10.1016/J.Jcrysgro.2004.02.048  0.332
2002 Mandal KC, Smirnov A, Roy UN, Burger A. Thermally evaporated AgGaTe2 thin films for low-cost p-AgGaTe2/n-Si heterojunction solar cells Materials Research Society Symposium - Proceedings. 744: 131-136. DOI: 10.1557/Proc-744-M4.4  0.384
2002 Mandal KC, Smirnov A, Peramunage D, David Rauh R. Low-Cost, Large-Area Nanocrystalline TiO2 -Polymer Solar Cells on Flexible Plastics Mrs Proceedings. 737. DOI: 10.1557/Proc-737-F8.45  0.308
1998 Mandal KC, Klugerman M, Cirignano LJ, Moy LP, Shah KS, Squillante MR, Bhattacharyya RN. Growth, characterization and spectroscopic investigations of InI crystals for optical and radiation detector applications Materials Research Society Symposium - Proceedings. 487: 597-604.  0.382
1994 Savadogo O, Mandal KC. Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2S3 Films Chemically Deposited with Silicotungstic Acid Journal of the Electrochemical Society. 141: 2871-2877. DOI: 10.1149/1.2059248  0.342
1993 Chazalviel JN, Dubin VM, Mandal KC, Ozanam F. Modulated infrared spectroscopy at the electrochemical interface Applied Spectroscopy. 47: 1411-1416. DOI: 10.1366/0003702934067658  0.303
1993 Savadogo O, Mandal KC. Low-cost technique for preparing n-Sb2S3/p-Si heterojunction solar cells Applied Physics Letters. 63: 228-230. DOI: 10.1063/1.110349  0.338
1992 Savadogo O, Mandal KC. Characterizations of Antimony Tri-Sulfide Chemically Deposited with Silicotungstic Acid Journal of the Electrochemical Society. 139: L16-L18. DOI: 10.1149/1.2069211  0.31
1992 Savadogo O, Mandal KC. Studies on new chemically deposited photoconducting antimony trisulphide thin films Solar Energy Materials and Solar Cells. 26: 117-136. DOI: 10.1016/0927-0248(92)90131-8  0.31
1992 Savadogo O, Mandal KC. Photoelectrochemical (PEC) solar cell properties of chemically deposited cadmium selenide thin films with heteropolyacids Materials Chemistry and Physics. 31: 301-309. DOI: 10.1016/0254-0584(92)90191-A  0.333
1990 Mandal KC, Ozanam F, Chazalviel JN. In situ infrared evidence for the electrochemical incorporation of hydrogen into Si and Ge Applied Physics Letters. 57: 2788-2790. DOI: 10.1063/1.103788  0.334
Low-probability matches (unlikely to be authored by this person)
2000 Sengupta A, Mandal KC, Zhang JZ. Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors:  A Comparative Study of Colloidal BiI3and PbI2Nanoparticles The Journal of Physical Chemistry B. 104: 9396-9403. DOI: 10.1021/Jp000980+  0.299
2015 Tang Y, Xie W, Mandal KC, McGuire JA, Lai CW. Optical and spin polarization dynamics in GaSe nanoslabs Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.195429  0.284
2012 Mandal KC, Das S. Fabrication and characterization of improved p-GaTe/n-InSe heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 177-180. DOI: 10.1109/PVSC.2012.6317595  0.28
2017 Schmidtlein CR, Turner JN, Thompson MO, Mandal KC, Häggström I, Zhang J, Humm JL, Feiglin DH, Krol A. Initial performance studies of a wearable brain positron emission tomography camera based on autonomous thin-film digital Geiger avalanche photodiode arrays. Journal of Medical Imaging (Bellingham, Wash.). 4: 011003. PMID 27921074 DOI: 10.1117/1.Jmi.4.1.011003  0.279
1992 Mandal KC, Savadogo O. Chemically deposited n-CdSe thin film photo-electrochemical cells: effects of Zn2+-modification Journal of Materials Science. 27: 4355-4360. DOI: 10.1007/BF00541566  0.274
2012 Das S, Mandal KC. Low-cost Cu2ZnSnS4 thin films for large-area high-efficiency heterojunction solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2668-2673. DOI: 10.1109/PVSC.2012.6318144  0.274
1992 Mandal KC, Ozanam F, Chazalviel JN. In-situ infrared investigations of the electrochemistry of heteropolyacids at n-Ge electrodes Journal of Electroanalytical Chemistry. 336: 153-170. DOI: 10.1016/0022-0728(92)80269-A  0.273
2012 Das S, Frye C, Muzykov PG, Mandal KC. Deposition and characterization of low-cost spray pyrolyzed Cu 2ZnSnS 4 (CZTS) thin-films for large-area high-efficiency heterojunction solar cells Ecs Transactions. 45: 153-161. DOI: 10.1149/1.3701535  0.268
2007 Conway AM, Reinhardt CE, Nikolić RJ, Nelson AJ, Wang TF, Wu KJ, Payne SA, Mertiri A, Pabst G, Roy R, Mandal KC, Bhattacharya P, Cui Y, Groza M, Burger A. Exploration of GaTe for gamma detection Ieee Nuclear Science Symposium Conference Record. 2: 1551-1555. DOI: 10.1109/NSSMIC.2007.4437294  0.265
1994 Savadogo O, Mandal KC. Fabrication of low-cost n-Sb2S3p-Ge heterojunction solar cells Journal of Physics D: Applied Physics. 27: 1070-1075. DOI: 10.1088/0022-3727/27/5/028  0.264
1999 Sengupta A, Jiang B, Mandal KC, Zhang JZ. Ultrafast electronic relaxation dynamics in PbI2 semiconductor colloidal nanoparticles: A femtosecond transient absorption study Journal of Physical Chemistry B. 103: 3128-3137. DOI: 10.1021/Jp9842345  0.263
2011 Das S, Mandal KC. Low-cost fabrication of improved n-Si/p-AgGaSe 2 heterojunction solar cells Proceedings of Spie - the International Society For Optical Engineering. 8110. DOI: 10.1117/12.896891  0.262
2015 Tang Y, Xie W, Mandal KC, McGuire JA, Lai CW. Linearly polarized remote-edge luminescence in GaSe nanoslabs Physical Review Applied. 4. DOI: 10.1103/Physrevapplied.4.034008  0.25
1997 Shah KS, Bennett P, Cirignano L, Dmitriyev Y, Klugerman M, Mandal K, Moy LP, Street RA. Characterization of X-Ray Imaging Properties of PbI2 Films Mrs Proceedings. 487. DOI: 10.1557/PROC-487-351  0.241
2012 Das S, Mandal KC. Comparison of Cu2ZnSnS4 thin film properties prepared by thermal evaporation of elemental metals and binary sulfide sources Conference Record of the Ieee Photovoltaic Specialists Conference. 2674-2678. DOI: 10.1109/PVSC.2012.6318145  0.238
2006 Yu BL, Zeng F, Kartazayev V, Alfano RR, Mandal KC. Erratum: “Terahertz Studies of the Dielectric Response and Second-Order Phonons in a GaSe Crystal” [Appl. Phys. Lett.87, 182104 (2005)] Applied Physics Letters. 88: 159902. DOI: 10.1063/1.2194647  0.237
1986 Mandal KC, Basu S, Bose DN. Surface-modified CdTe PEC solar cells Solar Cells. 18: 25-30. DOI: 10.1016/0379-6787(86)90004-9  0.236
2010 Zhao F, Islam MM, Chandrashekhar MVS, Mandal KC, Sudarshan TS. Investigation of SiO2 cap for Al implant activation in 4H-SiC Materials Research Society Symposium Proceedings. 1246: 99-103.  0.236
1991 Mandal KC, Savadogo O. Novel chemical preparative route for semiconducting MoSe2 thin films Journal of Materials Chemistry. 1: 301. DOI: 10.1039/Jm9910100301  0.233
2015 Tang Y, Xie W, Mandal KC, McGuire JA, Lai CW. Exciton spin dynamics in GaSe Journal of Applied Physics. 118. DOI: 10.1063/1.4930809  0.228
1985 Bose DN, Hegde MS, Basu S, Mandal KC. XPS STUDY OF RU-MODIFIED CDTE FOR PEC SOLAR CELLS Conference Record of the Ieee Photovoltaic Specialists Conference. 1743-1744.  0.228
1987 Mandal KC, Basu S, Bose DN. Effects of surface modification on n-CdTe photoelectrochemical solar cells Journal of Physical Chemistry. 91: 4011-4013.  0.223
2004 Rademaker K, Petermann K, Huber G, Krupke WF, Page RH, Payne SA, Yelisseyev AP, Isaenko LI, Roy UN, Burger A, Mandal KC, Nitsch K. Slow nonradiative decay for rare earths in KPb2Br5 and RbPb2Br5 Osa Trends in Optics and Photonics Series. 94: 410-414.  0.22
1992 Savadogo O, Mandal KC. Improved Schottky barrier on n-Sb2S3 films chemically deposited with silicotungstic acid Electronics Letters. 28: 1682-1683.  0.213
1986 Mandal KC, Basu S, Bose DN. SURFACE MODIFIED CdTe PEC CELLS: SOLAR CELL AND SUB-BAND GAP RESPONSE . 3: 1882-1886.  0.212
2010 Xu G, Sun G, Ding YJ, Zotova IB, Mandal KC, Mertiri A, Pabst G, Roy R, Fernelius NC. Symmetries of second-order nonlinear susceptibility tensor for GaSe by investigating THz generation 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 173-174. DOI: 10.1109/Photonics.2010.5698814  0.208
2010 Guibao Xu, Sun G, Ding YJ, Zotova IB, Mandal KC, Mertiri A, Pabst G, Fernelius N. THz generation from monoclinic centrosymmetric GaTe crystals pumped across bandgap due to carrier unidirectional diffusion Optics Infobase Conference Papers.  0.203
1989 Bose DN, Hedge MS, Basu S, Mandal KC. XPS investigation of CdTe surfaces: Effect of Ru modification Semiconductor Science and Technology. 4: 866-870. DOI: 10.1088/0268-1242/4/10/006  0.2
2006 Yu BL, Altan H, Zeng F, Kartazayev V, Alfano R, Mandal KC. Terahertz resonances in the dielectric response due to second order phonons in a GaSe crystal Materials Research Society Symposium Proceedings. 935: 20-25.  0.197
2013 Sarkar D, Mandal M, Mandal K. Design and synthesis of high performance multifunctional ultrathin hematite nanoribbons. Acs Applied Materials & Interfaces. 5: 11995-2004. PMID 24180325 DOI: 10.1021/am403762d  0.182
1986 Bose DN, Basu S, Mandal KC, Mazumdar D. EVIDENCE FOR AMPHOTERIC BEHAVIOR OF RU ON CDTE SURFACES Applied Physics Letters. 48: 472-474.  0.182
1988 Bose DN, Basu S, Mandal KC. Characterization of chemically modified CdTe surfaces Thin Solid Films. 164: 13-19. DOI: 10.1016/0040-6090(88)90102-2  0.176
1987 Mandal KC, Basu S, Bose DN. CORRELATION OF FERMI LEVEL SHIFT WITH PHOTOVOLTAGES AT RUTHENIUM-MODIFIED CdTe SURFACES Chemtech. 17: 559-561. DOI: 10.1016/0022-4596(87)90266-0  0.174
2003 Mandal KC, Smirnov A, Peramunage D, Rauh RD. Low-cost, large-area nanocrystalline TiO2-polymer solar cells on flexible plastics Materials Research Society Symposium - Proceedings. 737: 739-744.  0.164
1987 Mandal KC, Basu S, Bose DN. Effect of surface modification on sub-bandgap response of n-CdTe photoelectrodes Surface Science. 188: 235-240. DOI: 10.1016/S0039-6028(87)80154-1  0.151
1990 Sanyal GS, Mondal A, Mandal KC, Ghosh B, Saha H, Mukherjee MK. A comparative study of CdTe films prepared by different techniques Solar Energy Materials. 20: 395-404. DOI: 10.1016/0165-1633(90)90031-U  0.151
1991 Mandal KC, Santhanam KSV. Studies of sub-bandgap response on surface-modified n-CdSe photoelectrodes Journal of Materials Science. 26: 3905-3908. DOI: 10.1007/Bf01184989  0.151
2000 Sengupta A, Mandal KC, Zhang JZ. Ultrafast electronic relaxation dynamics in layered iodide semiconductors: A comparative study of colloidal BiI3 and PbI2 nanoparticles Journal of Physical Chemistry B. 104: 9396-9403.  0.149
1990 Mandal KC, Mondal A. A new chemical method for preparing semiconductor grade antimony tri-sulphide thin films Journal of Physics and Chemistry of Solids. 51: 1339-1341. DOI: 10.1016/0022-3697(90)90014-7  0.144
1988 Mandal KC, Basu S, Bose DN. CdTe photoelectrochemical solar cells-chemical modification of surfaces Bulletin of Materials Science. 10: 349-351. DOI: 10.1007/BF02744306  0.141
1990 Mandal KC, Mondal A. Chemically deposited semiconducting molybdenum sulfide thin films Journal of Solid State Chemistry. 85: 176-179. DOI: 10.1016/S0022-4596(05)80075-1  0.141
1991 Mandal KC, Savadogo O. High-efficiency chemically deposited CdSe photoelectrochemical solar cells: effect of SiW12O404- incorporation Journal of Materials Science Letters. 10: 1446-1448. DOI: 10.1007/BF00724402  0.139
2004 Ma RH, Zhang H, Larson DJ, Mandal KC. Modeling of thermal field, kinetics and stresses of CdZnTe bridgman growth without wall contact Aiaa Paper. 10553-10558.  0.138
2010 SAVADOGO O, MANDAL KC. ChemInform Abstract: Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2S3 Films Chemically Deposited with Silicotungstic Acid. Cheminform. 26: no-no. DOI: 10.1002/chin.199504282  0.133
1983 Bose DN, Mandal KC, Basu S, Majumdar B, Haldar AR. EVALUATION OF RICE-HUSK SILICON BY PHOTOELECTROCHEMICAL TECHNIQUES Proceedings of Condensed Papers - Miami International Conference On Alternative Energy Sources. 210-211.  0.128
1989 Santhanam KSV, Rangarajan J, Braganza O, Haram SK, Limaye NM, Mandal KC. Electrochemically initiated cold fusion of deuterium Indian Journal of Technology. 27: 175-177.  0.128
1987 Mandal KC, Basu S, Bose DN. Effects of surface modification on n-cadmium telluride photoelectrochemical solar cells The Journal of Physical Chemistry. 91: 4011-4013. DOI: 10.1021/j100299a017  0.103
2019 Ghosh US, Rai S, Mukherjee B, Biswas A, Mondal AK, Mandal K, Chakraborty A, Chakraborty S, Mukherjee G, Sharma A, Bala I, Muralithar S, Singh RP. In-beam spectroscopic study of Zn63 Physical Review C. 100. DOI: 10.1103/physrevc.100.034314  0.1
2012 Das S, Mandal KC. Optical Down-Conversion in Tb3+-Doped Zn-Chalcogenide Quantum Dots Ecs Transactions. 45: 89-94. DOI: 10.1149/1.3700414  0.085
2010 Xu G, Sun G, Ding YJ, Zotova IB, Mandal KC, Mertiri A, Pabst G, Fernelius N. Investigation of symmetries of second-order nonlinear susceptibility tensor based on THz generation Optics Infobase Conference Papers.  0.083
2016 Das S, Mandal KC, Bhattacharya RN. Earth-Abundant Cu2ZnSn(S,Se)4 (CZTSSe) solar cells Springer Series in Materials Science. 218: 25-74. DOI: 10.1007/978-3-319-20331-7_2  0.083
1990 Mandal KC. Fermi level shift with photovoltages at zinc modified CdSe surfaces Journal of Materials Science Letters. 9: 1203-1204. DOI: 10.1007/BF00721892  0.073
2016 Mandal KC, Halder P, Barman S, Kumar R, Mukhopadhyay B, Mohan Shukla R. Intragastric pressure: Useful indicator in the management of congenital diaphragmatic hernia Journal of Indian Association of Pediatric Surgeons. 21: 175-177. DOI: 10.4103/0971-9261.186547  0.066
2009 Maity C, Rana S, Pati BR, Mandal KC. Effect of graded hyperbaric atmospheric pressure on the quantity and composition of faecal flora Microbial Ecology in Health and Disease. 21: 104-108. DOI: 10.1080/08910600902992725  0.066
2015 Tang Y, Xie W, Mandal KC, McGuire JA, Lai CW. Optical generation of high spin polarization in GaSe nanoslabs Cleo: Science and Innovations, Cleo-Si 2015. 2267. DOI: 10.1364/CLEO_AT.2015.JW2A.45  0.056
2015 Tang Y, Xie W, Mandal KC, McGuire JA, Lai CW. Optical generation of high spin polarization in GaSe nanoslabs Conference On Lasers and Electro-Optics Europe - Technical Digest. 2015.  0.056
2022 Yadav GK, Rohita DK, Mandal KC, Paudel B, Devkot AR. An accidental emamectin benzoate poisoning in child: A case report. Clinical Case Reports. 10: e6133. PMID 35898734 DOI: 10.1002/ccr3.6133  0.043
2013 Shukla RM, Mukherjee PP, Mukhopadhyay B, Mandal KC. Congenital duodenal obstruction with preduodenal portal vein and situs inversus totalis: report of two cases and literature review. The Indian Journal of Surgery. 75: 74-6. PMID 24426519 DOI: 10.1007/s12262-011-0347-x  0.042
2010 Shukla RM, Mukhopadhyay B, Mandal KC, Saha K, Roy D, Mukherjee PP. Emergency separation of a xipho-omphalopagus twin in a developing country African Journal of Paediatric Surgery. 7: 197-199. PMID 20859031 DOI: 10.4103/0189-6725.70427  0.041
2012 Shukla RM, Maitra SK, Patra MP, Mandal KC, Sarkar R, Mukhopadhyay B, Bhattacharya M. Eventration of diaphragm with gastric duplication cysts: a rare association. Indian Journal of Pediatrics. 79: 1377-9. PMID 22294271 DOI: 10.1007/s12098-012-0688-x  0.039
1986 Bose DN, Basu S, Mandal KC, Mazumdar D. Evidence for amphoteric behavior of Ru on CdTe surfaces Applied Physics Letters. 48: 472-474. DOI: 10.1063/1.96534  0.032
2014 Barman S, Mandal KC, Shukla RM, Mukhopadhyay B. Esophageal Atresia with Tracheoesophageal Fistula Associated with Situs Inversus Totalis Indian Journal of Surgery. 76: 239-240. DOI: 10.1007/s12262-013-0967-4  0.032
2014 Patra A, Mandal A, Samanta A, Mahapatra TD, Mandal S, Roy S, Pradhan S, Nandi DK, Mandal KC. Therapeutic effect of Streptococcus thermophilus (MTCC 1938) on acetaminophen induced uremia in experimental rats Indian Journal of Biotechnology. 13: 318-323.  0.03
2016 Mandal KC, Mukhopadhyay M, Barman S, Halder P, Mukhopadhyay B, Kumar R. Uncommon renal tumors in children: A single center experience Journal of Indian Association of Pediatric Surgeons. 21: 61-65. DOI: 10.4103/0971-9261.176940  0.028
2010 Mukhopadhyay M, Shukla RM, Mandal KC, Mukhopadhyay B. Renal teratoma with duplication of cecum and appendix Journal of Pediatric Surgery. 45: 255-258. PMID 20105615 DOI: 10.1016/j.jpedsurg.2009.10.053  0.028
2015 Barman S, Mandal KC, Kumar R, Biswas SK, Mukhopadhyay M, Mukhopadhyay B. Congenital cystic lesions of lung in the paediatric population: A 5-year single institutional study with review of literature. African Journal of Paediatric Surgery : Ajps. 12: 66-70. PMID 25659554 DOI: 10.4103/0189-6725.150987  0.027
2011 Shukla RM, Mukhopadhyay B, Mandal KC, Barman SS. Congenital penile urethrocutaneous fistula: A rare anomaly and review of literature Urology Annals. 3: 161-163. DOI: 10.4103/0974-7796.84953  0.025
2010 Shukla RM, Mukhopadhyay M, Mandal KC, Mukhopadhyay B. Giant congenital infected splenic cyst: An interesting case report and review of the literature Indian Journal of Surgery. 72: 260-262. DOI: 10.1007/s12262-010-0068-6  0.024
2022 Yadav GK, Keshari B, Rohita DK, Mandal KC, Bogati S, Mishra DR. A case report of secondary spontaneous pneumothorax in acute exacerbation of COPD managed with improvised chest tube drain. Annals of Medicine and Surgery (2012). 79: 104064. PMID 35860074 DOI: 10.1016/j.amsu.2022.104064  0.024
2019 Chaudhuri A, Mandal K. Dynamic magnetic properties of monodisperse CoFe2O4 nanoparticles synthesized by a facile solvothermal technique Physica B: Condensed Matter. 575: 311640. DOI: 10.1016/j.physb.2019.08.017  0.022
2012 Ray A, Mandal KC, Shukla RM, Roy D, Mukhopadhyay B, Bhattacharya M. Neglected intussusception presenting as transanal prolapse of small bowel. Indian Journal of Pediatrics. 79: 1370-1. PMID 22323102 DOI: 10.1007/s12098-012-0692-1  0.02
2016 Mandal KC, Barman S, Biswas S, Kumar R, Mukhopadhyay M, Mukhopadhyay B. Eventration of diaphragm with gastric perforation in a child: A rare presentation Journal of Indian Association of Pediatric Surgeons. 21: 207-208. DOI: 10.4103/0971-9261.186560  0.019
2015 Mandal KC, Patra SS, Biswas SK, Basu KS, Barman S. Laparoscopic sutureless cystogastrostomy in children for pseudocyst of pancreas: An innovative and simple technique. Journal of Indian Association of Pediatric Surgeons. 20: 53. PMID 25552838 DOI: 10.4103/0971-9261.145565  0.019
2014 Pal S, Banerjee A, Das PS, Pati BR, Mandal KC, Chakraborty B, Sen A, Mohapatra PKD. Dengue virus type 4 evolution and genomics: A bioinformatic approach Indian Journal of Biotechnology. 13: 330-336.  0.019
2014 Shukla RM, Mandal KC, Maitra S, Ray A, Sarkar R, Mukhopadhyay B, Bhattacharya M. Gastric volvulus with partial and complete gastric necrosis. Journal of Indian Association of Pediatric Surgeons. 19: 49-51. PMID 24604987 DOI: 10.4103/0971-9261.125968  0.019
2012 Shukla RM, Mandal KC, Roy D, Patra MP, Mukhopadhyay B. Scrotoschisis: An extremely rare congenital anomaly. Journal of Indian Association of Pediatric Surgeons. 17: 176-7. PMID 23243373 DOI: 10.4103/0971-9261.102342  0.016
2014 Barman S, Mandal KC, Mukhopadhyay M. Adrenal myelolipoma: An incidental and rare benign tumor in children Journal of Indian Association of Pediatric Surgeons. 19: 236-238. DOI: 10.4103/0971-9261.142019  0.015
2014 Shukla RM, Ray A, Sisodiya N, Patra M, Mandal KC, Basu KS, Biswas SK, Mukhopadhyay B. Look twice before you clamp the cord: iatrogenic ileal transection. Journal of Obstetrics and Gynaecology of India. 64: 40-1. PMID 25404805 DOI: 10.1007/s13224-013-0442-y  0.015
2015 Halder P, Mandal KC, Mukhopadhyay M, Debnath B. Shanghai Fever: A Fatal Form of Pseudomonas Aeruginosa Enteric Disease. Indian Pediatrics. 52: 896-8. PMID 26499020 DOI: 10.1007/s13312-015-0741-8  0.013
2013 Shukla RM, Mukhopadhyay B, Mukhopadhyay M, Mandal KC. Mediastinal ganglioneuroma: An incidentaloma of childhood Indian Journal of Medical and Paediatric Oncology. 34: 130-131. DOI: 10.4103/0971-5851.116218  0.011
2016 Mandal KC, Halder P, Barman S, Mukhopadhyay B. Congenital Short Bowel Syndrome due to Absent Midgut. Indian Journal of Pediatrics. PMID 27150813 DOI: 10.1007/s12098-016-2112-4  0.01
2015 Sisodiya N, Shukla RM, Mukhopadhyay B, Mandal KC. Patent Urachus in a Neonate: a Rarity. The Indian Journal of Surgery. 77: 722-3. PMID 26730097 DOI: 10.1007/s12262-013-0848-x  0.01
2013 Ray A, Mandal K, Shukla RM, Mukhopadhyay B, Bhattacharya M, Roy D. Authors' reply. Indian Journal of Pediatrics. 80: 528. PMID 23862198 DOI: 10.1007/s12098-012-0956-9  0.01
2013 Ray A, Shukla RM, Mandal KC, Mukhopadhyay M, Sisodiya N, Pradhan A, Mukhopadhyay B. Gallbladder polyp: A rare lesion in pediatric population. Journal of Indian Association of Pediatric Surgeons. 18: 36-7. PMID 23599584 DOI: 10.4103/0971-9261.107018  0.01
2013 Mukhopadhyay M, Shukla RM, Mukhopadhyay B, Mandal KC, Ray A, Sisodiya N, Patra MP. Ovarian cysts and tumors in infancy and childhood. Journal of Indian Association of Pediatric Surgeons. 18: 16-9. PMID 23599577 DOI: 10.4103/0971-9261.107010  0.01
2011 Shukla RM, Roy D, Mukherjee PP, Saha K, Mukhopadhyay B, Mandal KC, SahaBasu K, Barman SS. Spontaneous gall bladder perforation: a rare condition in the differential diagnosis of acute abdomen in children. Journal of Pediatric Surgery. 46: 241-3. PMID 21238677 DOI: 10.1016/j.jpedsurg.2010.09.043  0.01
2006 Mandal K. Economic Variabilty and Change in Sundarban Delta The Oriental Anthropologist: a Bi-Annual International Journal of the Science of Man. 6: 151-156. DOI: 10.1177/0976343020060112  0.01
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