| Year |
Citation |
Score |
| 2009 |
Nimmatoori P, Zhang Q, Dickey EC, Redwing JM. Suppression of the vapor-liquid-solid growth of silicon nanowires by antimony addition. Nanotechnology. 20: 025607. PMID 19417276 DOI: 10.1088/0957-4484/20/2/025607 |
0.676 |
|
| 2009 |
Redwing JM, Nimmatoori P, Lew KK, Zhang X, Zhang Q, Clark TE, Pan L, Dickey EC. Growth mechanisms and size-dependent characteristics of Si and Si 1-xGex nanowires Ecs Transactions. 25: 1145-1152. DOI: 10.1149/1.3207718 |
0.762 |
|
| 2008 |
Clark TE, Nimmatoori P, Lew KK, Pan L, Redwing JM, Dickey EC. Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires. Nano Letters. 8: 1246-52. PMID 18321076 DOI: 10.1021/Nl072849K |
0.709 |
|
| 2008 |
Lu Q, Adu KW, Gutiérrez HR, Chen G, Lew KK, Nimmatoori P, Zhang X, Dickey EC, Redwing JM, Eklund PC. Raman scattering from Si1-xGex alloy nanowires Journal of Physical Chemistry C. 112: 3209-3215. DOI: 10.1021/Jp074764D |
0.683 |
|
| 2008 |
Nimmatoori P, Zhang Q, Zhang X, Dickey EC, Redwing JM. 23b. Growth characteristics and properties of Si and Si 1-xGex nanowires Aiche Annual Meeting, Conference Proceedings. |
0.737 |
|
| 2008 |
Nimmatoori P, Zhang Q, Zhang X, Dickey EC, Redwing JM. 23b. Growth characteristics and properties of Si and Si1-xGex nanowires Nanoscale Science and Engineering Forum Conference, Presentations At the 2008 Aiche Spring National Meeting. 26-32. |
0.737 |
|
| 2007 |
Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC. Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires. Nano Letters. 7: 3241-5. PMID 17894516 DOI: 10.1021/Nl071132U |
0.668 |
|
| 2007 |
Clark T, Zhang X, Lew K, Pan L, Nimmatoori P, Redwing J, Dickey E. Diameter Dependence of Ge-doped Si Nanowires Fabricated via Vapor-Liquid-Solid Growth Microscopy and Microanalysis. 13. DOI: 10.1017/S143192760707804X |
0.75 |
|
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