Year |
Citation |
Score |
2020 |
Rao Z, Jin H, Engwall A, Chason E, Kim K. Determination of Stresses in Incrementally Deposited Films From Wafer-Curvature Measurements Journal of Applied Mechanics. 87. DOI: 10.1115/1.4047572 |
0.446 |
|
2020 |
Jagtap P, Jain N, Chason E. Whisker growth under a controlled driving force: Pressure induced whisker nucleation and growth Scripta Materialia. 182: 43-47. DOI: 10.1016/J.Scriptamat.2020.02.036 |
0.355 |
|
2020 |
Jagtap P, Chason E. A unified kinetic model for stress relaxation and recovery during and after growth interruptions in polycrystalline thin films Acta Materialia. 193: 202-209. DOI: 10.1016/J.Actamat.2020.04.013 |
0.494 |
|
2019 |
Rao Z, Hearne SJ, Chason E. The Effects of Plating Current, Grain Size, and Electrolyte on Stress Evolution in Electrodeposited Ni Journal of the Electrochemical Society. 166. DOI: 10.1149/2.0261901Jes |
0.352 |
|
2019 |
Chason E, Bower AF. Kinetic Monte Carlo simulations of stress and morphology evolution in polycrystalline thin films Journal of Applied Physics. 125: 115304. DOI: 10.1063/1.5085313 |
0.494 |
|
2019 |
Kaub T, Rao Z, Chason E, Thompson GB. The influence of deposition parameters on the stress evolution of sputter deposited copper Surface & Coatings Technology. 357: 939-946. DOI: 10.1016/J.Surfcoat.2018.10.059 |
0.489 |
|
2019 |
Chason E, Pei F, Jain N, Hitt A. Studying the Effect of Grain Size on Whisker Nucleation and Growth Kinetics Using Thermal Strain Journal of Electronic Materials. 48: 17-24. DOI: 10.1007/S11664-018-6594-X |
0.433 |
|
2018 |
Abadias G, Chason E, Keckes J, Sebastiani M, Thompson GB, Barthel E, Doll GL, Murray CE, Stoessel CH, Martinu L. Review Article: Stress in thin films and coatings: Current status, challenges, and prospects Journal of Vacuum Science and Technology. 36: 20801. DOI: 10.1116/1.5011790 |
0.466 |
|
2018 |
Chason E, Engwall AM, Rao Z, Nishimura T. Kinetic model for thin film stress including the effect of grain growth Journal of Applied Physics. 123: 185305. DOI: 10.1063/1.5030740 |
0.502 |
|
2018 |
Chason E, Vasquez J, Pei F, Jain N, Hitt A. Quantifying the Effect of Stress on Sn Whisker Nucleation Kinetics Journal of Electronic Materials. 47: 103-109. DOI: 10.1007/S11664-017-5802-4 |
0.445 |
|
2017 |
Engwall AM, Rao Z, Chason E. Residual Stress in Electrodeposited Cu Thin Films: Understanding the Combined Effects of Growth Rate and Grain Size Journal of the Electrochemical Society. 164. DOI: 10.1149/2.0921713Jes |
0.436 |
|
2017 |
Chen C, Chason E, Guduru PR. Numerical Solution of Moving Phase Boundary and Diffusion-Induced Stress of Sn Anode in the Lithium-Ion Battery Journal of the Electrochemical Society. 164: E3661-E3670. DOI: 10.1149/2.0661711Jes |
0.354 |
|
2017 |
Chen C, Chason E, Guduru PR. Measurements of the Phase and Stress Evolution during Initial Lithiation of Sn Electrodes Journal of the Electrochemical Society. 164: A574-A579. DOI: 10.1149/2.0381704Jes |
0.328 |
|
2017 |
Pei F, Buchovecky E, Bower A, Chason E. Stress evolution and whisker growth during thermal cycling of Sn films: A comparison of analytical modeling and experiments Acta Materialia. 129: 462-473. DOI: 10.1016/J.Actamat.2017.03.005 |
0.476 |
|
2017 |
Fortier A, Liu Y, Ghamarian I, Collins PC, Chason E. Investigation of Tin (Sn) Film Using an Aerosol Jet Additive Manufacturing Deposition Process Journal of Electronic Materials. 46: 1-9. DOI: 10.1007/S11664-017-5524-7 |
0.397 |
|
2016 |
Sen S, Kim SY, Palmore LR, Jin S, Jadhav N, Chason E, Palmore GT. In Situ Measurement of Voltage-Induced Stress in Conducting Polymers with Redox-Active Dopants. Acs Applied Materials & Interfaces. PMID 27579593 DOI: 10.1021/Acsami.6B06523 |
0.416 |
|
2016 |
Hulikal S, Chen C, Chason E, Bower A. Experimental Calibration of a Cahn-Hilliard Phase-Field Model for Phase Transformations in Li-Sn Electrodes Journal of the Electrochemical Society. 163: A2647-A2659. DOI: 10.1149/2.0701613Jes |
0.31 |
|
2016 |
Chason E, Guduru PR. Tutorial: Understanding residual stress in polycrystalline thin films through real-time measurements and physical models Journal of Applied Physics. 119: 191101. DOI: 10.1063/1.4949263 |
0.473 |
|
2016 |
Chason E, Karlson M, Colin JJ, Magnfält D, Sarakinos K, Abadias G. A kinetic model for stress generation in thin films grown from energetic vapor fluxes Journal of Applied Physics. 119. DOI: 10.1063/1.4946039 |
0.518 |
|
2016 |
Pei F, Jadhav N, Buchovecky E, Bower AF, Chason E, Liu W, Tischler JZ, Ice GE, Xu R. In-situ synchrotron micro-diffraction study of surface, interface, grain structure, and strain/stress evolution during Sn whisker/hillock formation Journal of Applied Physics. 119. DOI: 10.1063/1.4942920 |
0.45 |
|
2016 |
Engwall AM, Rao Z, Chason E. Origins of residual stress in thin films: Interaction between microstructure and growth kinetics Materials & Design. 110: 616-623. DOI: 10.1016/J.Matdes.2016.07.089 |
0.499 |
|
2015 |
Chason E, Engwall AM. Relating residual stress to thin film growth processes via a kinetic model and real-time experiments Thin Solid Films. 596: 2-7. DOI: 10.1016/J.Tsf.2015.06.061 |
0.497 |
|
2015 |
Chason E, Engwall AM, Miller CM, Chen CH, Bhandari A, Soni SK, Hearne SJ, Freund LB, Sheldon BW. Stress evolution during growth of 1-D island arrays: Kinetics and length scaling Scripta Materialia. 97: 33-36. DOI: 10.1016/J.Scriptamat.2014.10.012 |
0.483 |
|
2015 |
Bower AF, Guduru PR, Chason E. Analytical solutions for composition and stress in spherical elastic-plastic lithium-ion electrode particles containing a propagating phase boundary International Journal of Solids and Structures. DOI: 10.1016/J.Ijsolstr.2015.05.018 |
0.328 |
|
2015 |
Bower AF, Chason E, Guduru PR, Sheldon BW. A continuum model of deformation, transport and irreversible changes in atomic structure in amorphous lithium-silicon electrodes Acta Materialia. 98: 229-241. DOI: 10.1016/J.Actamat.2015.07.036 |
0.386 |
|
2015 |
Chason E, Pei F. Measuring the Stress Dependence of Nucleation and Growth Processes in Sn Whisker Formation Jom. 67: 2416-2424. DOI: 10.1007/S11837-015-1557-7 |
0.481 |
|
2015 |
Pei F, Bower AF, Chason E. Quantifying the Rates of Sn Whisker Growth and Plastic Strain Relaxation Using Thermally-Induced Stress Journal of Electronic Materials. DOI: 10.1007/S11664-015-3965-4 |
0.458 |
|
2014 |
Ishii Y, Madi CS, Aziz MJ, Chason E. Stress evolution in Si during low-energy ion bombardment Journal of Materials Research. 29: 2942-2948. DOI: 10.1557/Jmr.2014.350 |
0.445 |
|
2014 |
Chason E, Shin JW, Chen CH, Engwall AM, Miller CM, Hearne SJ, Freund LB. Growth of patterned island arrays to identify origins of thin film stress Journal of Applied Physics. 115. DOI: 10.1063/1.4870051 |
0.492 |
|
2014 |
Pei F, Briant CL, Kesari H, Bower AF, Chason E. Kinetics of Sn whisker nucleation using thermally induced stress Scripta Materialia. 93: 16-19. DOI: 10.1016/J.Scriptamat.2014.08.019 |
0.425 |
|
2014 |
Chason E, Pei F, Briant CL, Kesari H, Bower AF. Significance of Nucleation Kinetics in Sn Whisker Formation Journal of Electronic Materials. 43: 4435-4441. DOI: 10.1007/S11664-014-3379-8 |
0.437 |
|
2014 |
Pei F, Chason E. In Situ Measurement of Stress and Whisker/Hillock Density During Thermal Cycling of Sn Layers Journal of Electronic Materials. 43: 80-87. DOI: 10.1007/S11664-013-2878-3 |
0.412 |
|
2013 |
Chason E, Engwall A, Pei F, Lafouresse M, Bertocci U, Stafford G, Murphy JA, Lenihan C, Buckleyc DN. Understanding residual stress in electrodeposited Cu thin films Journal of the Electrochemical Society. 160: D3285-D3289. DOI: 10.1149/2.048312Jes |
0.406 |
|
2013 |
Chason E, Jadhav N, Pei F, Buchovecky E, Bower A. Growth of whiskers from Sn surfaces: Driving forces and growth mechanisms Progress in Surface Science. 88: 103-131. DOI: 10.1016/J.Progsurf.2013.02.002 |
0.486 |
|
2013 |
Jadhav N, Williams M, Pei F, Stafford G, Chason E. Altering the mechanical properties of sn films by alloying with Bi: Mimicking the effect of Pb to suppress whiskers Journal of Electronic Materials. 42: 312-318. DOI: 10.1007/S11664-012-2267-3 |
0.435 |
|
2012 |
Xu H, Alford C, Chason E, Detor AJ, Fuller T, Hamza AV, Hayes J, Moreno KA, Nikroo A, Van Buuren T, Wang Y, Wu JJ, Wilkens H, Youngblood KP. Thick beryllium coatings by ion-assisted magnetron sputtering Journal of Materials Research. 27: 822-828. DOI: 10.1557/Jmr.2011.378 |
0.373 |
|
2012 |
Kim SP, Chew HB, Chason E, Shenoy VB, Kim KS. Nanoscale mechanisms of surface stress and morphology evolution in FCC metals under noble-gas ion bombardments Proceedings of the Royal Society a: Mathematical, Physical and Engineering Sciences. 468: 2550-2573. DOI: 10.1098/Rspa.2012.0042 |
0.434 |
|
2012 |
Pei F, Jadhav N, Chason E. Correlating whisker growth and grain structure on Sn-Cu samples by real-time scanning electron microscopy and backscattering diffraction characterization Applied Physics Letters. 100: 221902. DOI: 10.1063/1.4721661 |
0.38 |
|
2012 |
Chason E, Shin JW, Hearne SJ, Freund LB. Kinetic model for dependence of thin film stress on growth rate, temperature, and microstructure Journal of Applied Physics. 111. DOI: 10.1063/1.4704683 |
0.489 |
|
2012 |
Chason E. A kinetic analysis of residual stress evolution in polycrystalline thin films Thin Solid Films. 526: 1-14. DOI: 10.1016/J.Tsf.2012.11.001 |
0.498 |
|
2012 |
Ishii Y, Chan WL, Chason E. Kinetic Monte Carlo simulation of ripple formation by sputtering: Effects of multiple defects and Ehrlich–Schwoebel barriers Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 272: 188-192. DOI: 10.1016/J.Nimb.2011.01.062 |
0.347 |
|
2012 |
Chason E, Shenoy V. Surface nanopatterning mechanisms by keV ions: Linear instability models and beyond Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 272: 178-182. DOI: 10.1016/J.Nimb.2011.01.060 |
0.398 |
|
2012 |
Pei F, Jadhav N, Chason E. Correlation Between Surface Morphology Evolution and Grain Structure: Whisker/Hillock Formation in Sn-Cu Jom. 64: 1176-1183. DOI: 10.1007/S11837-012-0442-X |
0.431 |
|
2012 |
Jadhav N, Wasserman J, Pei F, Chason E. Stress Relaxation in Sn-Based Films: Effects of Pb Alloying, Grain Size, and Microstructure Journal of Electronic Materials. 41: 588-595. DOI: 10.1007/S11664-011-1829-0 |
0.482 |
|
2011 |
Xu H, Alford C, Chason E, Detor A, Fuller T, Hamza A, Hayes J, Moreno KA, Nikroo A, Van Buuren T, Wang M, Wu J, Youngblood KP. Thick beryllium coatings by magnetron sputtering Materials Research Society Symposium Proceedings. 1339: 7-13. DOI: 10.1557/Opl.2011.860 |
0.443 |
|
2011 |
Chason E, Jadhav N, Pei F. Effect of layer properties on stress evolution, intermetallic volume, and density during tin whisker formation Jom. 63: 62-68. DOI: 10.1007/S11837-011-0178-Z |
0.458 |
|
2010 |
Jadhav N, Buchovecky EJ, Reinbold L, Kumar S, Bower AF, Chason E. Understanding the correlation between intermetallic growth, stress evolution, and Sn whisker nucleation Ieee Transactions On Electronics Packaging Manufacturing. 33: 183-192. DOI: 10.1109/Tepm.2010.2043847 |
0.456 |
|
2010 |
Bhandakkar TK, Chason E, Gao H. Analytical model of transient compressive stress evolution during growth of high diffusivity thin films on substrates Philosophical Magazine. 90: 3037-3048. DOI: 10.1080/14786431003773007 |
0.486 |
|
2010 |
Yang Y, Huang H, Xiang SK, Chason E. Stress control in polycrystalline thin films—reduction in adatoms diffusion into grain boundaries via surfactants Applied Physics Letters. 96: 211903. DOI: 10.1063/1.3435473 |
0.42 |
|
2010 |
Navid AA, Chason E, Hodge AM. Evaluation of stress during and after sputter deposition of Cu and Ta films Surface and Coatings Technology. 205: 2355-2361. DOI: 10.1016/J.Surfcoat.2010.09.020 |
0.462 |
|
2010 |
Zepeda-Ruiz LA, Gilmer GH, Walton CC, Hamza AV, Chason E. Surface morphology evolution during sputter deposition of thin films – lattice Monte Carlo simulations Journal of Crystal Growth. 312: 1183-1187. DOI: 10.1016/J.Jcrysgro.2009.12.035 |
0.44 |
|
2010 |
Jadhav N, Buchovecky E, Chason E, Bower A. Real-time SEM/FIB studies of whisker growth and surface modification Jom. 62: 30-37. DOI: 10.1007/S11837-010-0105-8 |
0.404 |
|
2009 |
Medhekar NV, Chan WL, Shenoy VB, Chason E. Stress-enhanced pattern formation on surfaces during low energy ion bombardment. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 224021. PMID 21715759 DOI: 10.1088/0953-8984/21/22/224021 |
0.488 |
|
2009 |
Shin JW, Chason E. Compressive stress generation in sn thin films and the role of grain boundary diffusion. Physical Review Letters. 103: 056102. PMID 19792516 DOI: 10.1103/Physrevlett.103.056102 |
0.489 |
|
2009 |
Reinbold L, Jadhav N, Chason E, Kumar KS. Relation of Sn whisker formation to intermetallic growth: Results from a novel Sn-Cu "bimetal ledge specimen" Journal of Materials Research. 24: 3583-3589. DOI: 10.1557/Jmr.2009.0431 |
0.332 |
|
2009 |
Shin JW, Chason E. Stress behavior of electroplated Sn films during thermal cycling Journal of Materials Research. 24: 1522-1528. DOI: 10.1557/Jmr.2009.0172 |
0.478 |
|
2009 |
BHANDAKKAR TK, CHASON E, GAO H. FORMATION OF CRACK-LIKE DIFFUSION WEDGES AND COMPRESSIVE STRESS EVOLUTION DURING THIN FILM GROWTH WITH INHOMOGENEOUS GRAIN BOUNDARY DIFFUSIVITY International Journal of Applied Mechanics. 1: 1-19. DOI: 10.1142/S1758825109000071 |
0.475 |
|
2009 |
Chason E, Chan WL. Kinetic Monte Carlo simulations compared with continuum models and experimental properties of pattern formation during ion beam sputtering Journal of Physics Condensed Matter. 21. DOI: 10.1088/0953-8984/21/22/224016 |
0.395 |
|
2009 |
Zepeda-Ruiz LA, Chason E, Gilmer GH, Wang Y, Xu H, Nikroo A, Hamza AV. Understanding the relation between stress and surface morphology in sputtered films: Atomistic simulations and experiments Applied Physics Letters. 95: 151910. DOI: 10.1063/1.3246791 |
0.477 |
|
2009 |
Detor AJ, Hodge AM, Chason E, Wang Y, Xu H, Conyers M, Nikroo A, Hamza A. Stress and microstructure evolution in thick sputtered films Acta Materialia. 57: 2055-2065. DOI: 10.1016/J.Actamat.2008.12.042 |
0.49 |
|
2009 |
Buchovecky E, Jadhav N, Bower AF, Chason E. Finite element modeling of stress evolution in Sn films due to growth of the Cu 6Sn 5 intermetallic compound Journal of Electronic Materials. 38: 2676-2684. DOI: 10.1007/S11664-009-0911-3 |
0.473 |
|
2008 |
Kumar K, Reinbold L, Bower A, Chason E. Plastic deformation processes in Cu/Sn bimetallic films Journal of Materials Research. 23: 2916-2934. DOI: 10.1557/Jmr.2008.0351 |
0.429 |
|
2008 |
Chan WL, Chason E. Stress evolution and defect diffusion in Cu during low energy ion irradiation: Experiments and modeling Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 44-51. DOI: 10.1116/1.2812432 |
0.432 |
|
2008 |
Chason E, Jadhav N, Chan WL, Reinbold L, Kumar KS. Whisker formation in Sn and Pb–Sn coatings: Role of intermetallic growth, stress evolution, and plastic deformation processes Applied Physics Letters. 92: 171901. DOI: 10.1063/1.2912528 |
0.459 |
|
2007 |
Tello JS, Bower AF, Chason E, Sheldon BW. Kinetic model of stress evolution during coalescence and growth of polycrystalline thin films. Physical Review Letters. 98: 216104. PMID 17677789 DOI: 10.1103/Physrevlett.98.216104 |
0.503 |
|
2007 |
Maekawa Y, Sato K, Chason E, Mizoguchi T. Orientation of Nano-Grains in Hard-Disk Media on Ion-Beam Textured Substrates Ieee Transactions On Magnetics. 43: 2169-2171. DOI: 10.1109/Tmag.2007.893131 |
0.346 |
|
2007 |
Shin JW, Standley A, Chason E. Epitaxial electrodeposition of freestanding large area single crystal substrates Applied Physics Letters. 90: 261909. DOI: 10.1063/1.2752531 |
0.338 |
|
2007 |
Chan WL, Chason E. Making waves: Kinetic processes controlling surface evolution during low energy ion sputtering Journal of Applied Physics. 101. DOI: 10.1063/1.2749198 |
0.386 |
|
2007 |
Chan WL, Chason E, Iamsumang C. Surface stress induced in Cu foils during and after low energy ion bombardment Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 257: 428-432. DOI: 10.1016/J.Nimb.2007.01.042 |
0.476 |
|
2007 |
Chason E, Chan WL. Kinetic phase diagram for morphological evolution on Cu(0 0 1) surfaces during ion bombardment Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 256: 305-312. DOI: 10.1016/J.Nimb.2006.12.018 |
0.376 |
|
2006 |
Chason E, Chan WL, Bharathi MS. Kinetic Monte Carlo simulations of ion-induced ripple formation: Dependence on flux, temperature, and defect concentration in the linear regime Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.224103 |
0.401 |
|
2006 |
Lynch C, Chason E, Beresford R. Mobile dislocation density and strain relaxation rate evolution during InxGa1−xAs∕GaAs heteroepitaxy Journal of Applied Physics. 100: 13525. DOI: 10.1063/1.2206125 |
0.376 |
|
2006 |
Chason E, Chan WL. Kinetic mechanisms in ion-induced ripple formation on Cu(0 0 1) surfaces Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 242: 232-236. DOI: 10.1016/J.Nimb.2005.08.027 |
0.369 |
|
2006 |
Chan WL, Chason E. Morphology of ion sputtered Cu(0 0 1) surface: Transition from unidirectional roughening to bidirectional roughening Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 242: 228-231. DOI: 10.1016/J.Nimb.2005.08.026 |
0.375 |
|
2005 |
Brown AD, Erlebacher J, Chan WL, Chason E. Transient topographies of ion patterned Si(111). Physical Review Letters. 95: 056101. PMID 16090890 DOI: 10.1103/Physrevlett.95.056101 |
0.391 |
|
2005 |
Reinbold L, Chason E, Jadhav N, Kelly V, Holmes P, Shin J, Chan W, Kumar K, Barr G. Degradation in Sn Films due to Whisker Formation Mrs Proceedings. 887. DOI: 10.1557/Proc-0887-Q11-01 |
0.454 |
|
2005 |
Lynch C, Chason E, Beresford R. Enhanced strain relaxation rate of InGaAs by adatom-assisted dislocation kink nucleation Journal of Vacuum Science & Technology B. 23: 1166-1170. DOI: 10.1116/1.1914823 |
0.438 |
|
2005 |
Chan WL, Chason E. Sputter ripples and radiation-enhanced surface kinetics on Cu(001) Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.165418 |
0.337 |
|
2005 |
Lynch C, Chason E, Beresford R, Freund LB, Tetz K, Schwarz KW. Limits of strain relaxation in InGa/AsGaAs probed in real time by in situ wafer curvature measurement Journal of Applied Physics. 98. DOI: 10.1063/1.2060947 |
0.445 |
|
2005 |
Sheldon BW, Rajamani A, Bhandari A, Chason E, Hong SK, Beresford R. Competition between tensile and compressive stress mechanisms during Volmer-Weber growth of aluminum nitride films Journal of Applied Physics. 98. DOI: 10.1063/1.1994944 |
0.501 |
|
2004 |
Lynch C, Beresford R, Chason E. Real-time stress evolution during growth of InxAl1−xAs/GaAs metamorphic buffer layers Journal of Vacuum Science & Technology B. 22: 1539-1543. DOI: 10.1116/1.1669622 |
0.451 |
|
2004 |
Wai LC, Ramasubramaniam A, Shenoy VB, Chason E. Relaxation kinetics of nano-ripples on Cu(001) surface Physical Review B - Condensed Matter and Materials Physics. 70: 1-9. DOI: 10.1103/Physrevb.70.245403 |
0.322 |
|
2004 |
Chan WL, Pavenayotin N, Chason E. Kinetics of ion-induced ripple formation on Cu(001) surfaces Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.245413 |
0.408 |
|
2004 |
Lynch C, Chason E, Beresford R, Hong SK. Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation Applied Physics Letters. 84: 1085-1087. DOI: 10.1063/1.1646764 |
0.454 |
|
2003 |
Chason E, Sheldon BW. Monitoring Stress in Thin Films During Processing Surface Engineering. 19: 387-391. DOI: 10.1179/026708403225010118 |
0.448 |
|
2003 |
Sheldon BW, Ditkowski A, Beresford R, Chason E, Rankin J. Intrinsic compressive stress in polycrystalline films with negligible grain boundary diffusion Journal of Applied Physics. 94: 948-957. DOI: 10.1063/1.1575916 |
0.415 |
|
2003 |
Chason E, Aziz MJ. Spontaneous formation of patterns on sputtered surfaces Scripta Materialia. 49: 953-959. DOI: 10.1016/S1359-6462(03)00474-3 |
0.377 |
|
2003 |
Beresford R, Lynch C, Chason E. Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy Journal of Crystal Growth. 251: 106-111. DOI: 10.1016/S0022-0248(02)02376-X |
0.486 |
|
2003 |
Guduru PR, Chason E, Freund LB. Mechanics of compressive stress evolution during thin film growth Journal of the Mechanics and Physics of Solids. 51: 2127-2148. DOI: 10.1016/J.Jmps.2003.09.013 |
0.475 |
|
2002 |
Floro JA, Chason E, Cammarata RC, Srolovitz DJ. Physical origins of intrinsic stresses in Volmer-Weber thin films Mrs Bulletin. 27: 19-25+15. DOI: 10.1557/Mrs2002.15 |
0.494 |
|
2002 |
Lynch C, Chason E, Beresford R, Chen EB, Paine DC. Dislocation structure and relaxation kinetics in InGaAs/GaAs heteroepitaxy Journal of Vacuum Science & Technology B. 20: 1247-1250. DOI: 10.1116/1.1463722 |
0.467 |
|
2002 |
Rajamani A, Sheldon BW, Chason E, Bower AF. Intrinsic tensile stress and grain boundary formation during Volmer-Weber film growth Applied Physics Letters. 81: 1204-1206. DOI: 10.1063/1.1494459 |
0.486 |
|
2002 |
Yeom H, Popovich N, Chason E, Paine DC. A study of the effect of process oxygen on stress evolution in d.c. magnetron-deposited tin-doped indium oxide Thin Solid Films. 411: 17-22. DOI: 10.1016/S0040-6090(02)00166-9 |
0.393 |
|
2001 |
Yeom H, Lanier C, Chason E, Paine DC. Stress and Microstructure Evolution during the Deposition and Crystallization of DCMagnetron Sputter Deposited Amorphous ITO Mrs Proceedings. 666. DOI: 10.1557/Proc-666-F2.5 |
0.43 |
|
2001 |
Beresford R, Tetz K, Yin J, Chason E, González MU. Metastability of InGaAs/GaAs probed by in situ optical stress sensor Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1572-1575. DOI: 10.1116/1.1383077 |
0.361 |
|
2001 |
Freund LB, Chason E. Model for stress generated upon contact of neighboring islands on the surface of a substrate Journal of Applied Physics. 89: 4866-4873. DOI: 10.1063/1.1359437 |
0.487 |
|
2001 |
Floro JA, Hearne SJ, Hunter JA, Kotula P, Chason E, Seel SC, Thompson CV. The dynamic competition between stress generation and relaxation mechanisms during coalescence of Volmer-Weber thin films Journal of Applied Physics. 89: 4886-4897. DOI: 10.1063/1.1352563 |
0.473 |
|
2001 |
Chason E, Erlebacher J, Aziz M, Floro JA, Sinclair MB. Dynamics of pattern formation during low-energy ion bombardment of Si(0 0 1) Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 178: 55-61. DOI: 10.1016/S0168-583X(01)00505-5 |
0.385 |
|
2000 |
Floro JA, Sinclair MB, Chason E, Freund LB, Twesten RD, Hwang RQ, Lucadamo GA. Novel SiGe island coarsening kinetics: ostwald ripening and elastic interactions Physical Review Letters. 84: 701-4. PMID 11017351 DOI: 10.1103/Physrevlett.84.701 |
0.307 |
|
2000 |
Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA. Nonclassical smoothening of nanoscale surface corrugations. Physical Review Letters. 84: 5800-3. PMID 10991058 DOI: 10.1103/Physrevlett.84.5800 |
0.35 |
|
2000 |
Paine DC, Chason E, Chen E, Sparacin D, Yeorn H. A Study of the Crystallization of Amorphous Indium (Tin) Oxide Mrs Proceedings. 623: 245. DOI: 10.1557/Proc-623-245 |
0.333 |
|
2000 |
Chason E, Yin J, Tetz K, Beresford R, Freund LB, Ujue Gonzalez M, Floro JA. In situ measurements of stress relaxation during strained layer heteroepitaxy Materials Research Society Symposium - Proceedings. 583: 167-175. DOI: 10.1557/Proc-583-167 |
0.464 |
|
2000 |
Beresford R, Yin J, Tetz K, Chason E. Real-time measurements of stress relaxation in InGaAs/GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1431-1434. DOI: 10.1116/1.591397 |
0.449 |
|
2000 |
Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA. Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001) Journal of Vacuum Science and Technology. 18: 115-120. DOI: 10.1116/1.582127 |
0.406 |
|
2000 |
Hearne SJ, Han J, Lee SR, Floro JA, Follstaedt DM, Chason E, Tsong IST. Brittle-ductile relaxation kinetics of strained AlGaN'GaN heterostructures Applied Physics Letters. 76: 1534-1536. DOI: 10.1063/1.126087 |
0.374 |
|
1999 |
Han J, Crawford MH, Shul RJ, Hearne SJ, Chason E, Figiel JJ, Banas M. Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics Mrs Internet Journal of Nitride Semiconductor Research. 4: 811-816. DOI: 10.1557/S109257830000346X |
0.366 |
|
1999 |
Nesting DC, Kouvetakis J, Hearne S, Chason E, Tsong IST. Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 891-894. DOI: 10.1116/1.581661 |
0.463 |
|
1999 |
Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA. Spontaneous Pattern Formation on Ion Bombarded Si(001) Physical Review Letters. 82: 2330-2333. DOI: 10.1103/Physrevlett.82.2330 |
0.399 |
|
1999 |
Floro JA, Chason E, Freund LB, Twesten RD, Hwang RQ, Lucadamo GA. Evolution of coherent islands in Si{sub 1{minus}x}Ge{sub x}/Si(001) Physical Review B. 59: 1990-1998. DOI: 10.1103/Physrevb.59.1990 |
0.384 |
|
1999 |
Freund LB, Floro JA, Chason E. Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations Applied Physics Letters. 74: 1987-1989. DOI: 10.1063/1.123722 |
0.364 |
|
1999 |
Hearne S, Chason E, Han J, Floro JA, Figiel J, Hunter J, Amano H, Tsong IST. Stress evolution during metalorganic chemical vapor deposition of GaN Applied Physics Letters. 74: 356-358. DOI: 10.1063/1.123070 |
0.483 |
|
1999 |
Venezuela P, Tersoff J, Floro JA, Chason E, Follstaedt DM, Liu F, Lagally MG. Self-organized growth of alloy superlattices Nature. 397: 678-681. DOI: 10.1038/17767 |
0.348 |
|
1998 |
Amano H, Iwaya M, Kashima T, Katsuragawa M, Akasaki I, Han J, Hearne S, Floro JA, Chason E, Figiel J. Stress and Defect Control in GaN Using Low Temperature Interlayers Japanese Journal of Applied Physics. 37. DOI: 10.1143/Jjap.37.L1540 |
0.456 |
|
1998 |
Chason E, Sinclair MB, Floro JA, Hunter JA, Hwang RQ. Spectroscopic light scattering for real-time measurements of thin film and surface evolution Applied Physics Letters. 72: 3276-3278. DOI: 10.1063/1.121622 |
0.392 |
|
1997 |
Floro JA, Chason E, Twesten RD, Hwang RQ, Freund LB. SiGe Coherent Islanding and Stress Relaxation in the High Mobility Regime Physical Review Letters. 79: 3946-3949. DOI: 10.1103/Physrevlett.79.3946 |
0.411 |
|
1997 |
McLean JG, Krishnamachari B, Peale DR, Chason E, Sethna JP, Cooper BH. Decay of isolated surface features driven by the Gibbs-Thomson effect in an analytic model and a simulation Physical Review B. 55: 1811-1823. DOI: 10.1103/Physrevb.55.1811 |
0.313 |
|
1997 |
Chason E, Mayer TM. Thin film and surface characterization by specular X-ray reflectivity Critical Reviews in Solid State and Materials Sciences. 22: 1-67. DOI: 10.1080/10408439708241258 |
0.393 |
|
1997 |
Chason E, Picraux ST, Poate JM, Borland JO, Current MI, Diaz De La Rubia T, Eaglesham DJ, Holland OW, Law ME, Magee CW, Mayer JW, Melngailis J, Tasch AF. Ion beams in silicon processing and characterization Journal of Applied Physics. 81: 6513-6561. DOI: 10.1063/1.365193 |
0.325 |
|
1997 |
Floro JA, Chason E, Lee SR, Petersen GA. Biaxial Moduli Of Coherent Si1-Xgex Films On Si (001) Applied Physics Letters. 71: 1694-1696. DOI: 10.1063/1.120006 |
0.383 |
|
1997 |
Chason E, Kellerman BK. Monte Carlo simulations of ion-enhanced island coarsening Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 127: 225-229. DOI: 10.1016/S0168-583X(96)00889-0 |
0.395 |
|
1997 |
Kellerman BK, Chason E, Adams DP, Mayer TM, White JM. Indashsitu X-ray reflectivity investigation of growth and surface morphology evolution during Fe chemical vapor deposition on Si(001) Surface Science. 375: 331-339. DOI: 10.1016/S0039-6028(96)01267-8 |
0.389 |
|
1997 |
Adams D, Mayer T, Chason E, Kellerman B, Swartzentruber B. Island structure evolution during chemical vapor deposition Surface Science. 371: 445-454. DOI: 10.1016/S0039-6028(96)01005-9 |
0.384 |
|
1997 |
Floro JA, Chason E, Lee SR, Twesten RD, Hwang RQ, Freund LB. Real-time stress evolution during Si 1-x Ge x heteroepitaxy: dislocations, islanding, and segregation Journal of Electronic Materials. 26: 969-979. DOI: 10.1007/S11664-997-0233-2 |
0.516 |
|
1996 |
Chason E, Mayer TM, Adams DP, Huang H, Rubia TDDL, Gilmer G, Kellerman BK. Evolution of surface roughness during CVD growth Mrs Proceedings. 440: 157. DOI: 10.1557/Proc-440-157 |
0.371 |
|
1996 |
Chason E, Floro JA. Measurements Of Stress Evolution During Thin Film Deposition Mrs Proceedings. 428: 417. DOI: 10.1557/Proc-428-499 |
0.463 |
|
1996 |
Floro JA, Chason E. Measuring Ge segregation by real‐time stress monitoring during Si1−xGex molecular beam epitaxy Applied Physics Letters. 69: 3830-3832. DOI: 10.1063/1.117119 |
0.483 |
|
1995 |
Floro JA, Chason E, Lee SR. Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique Mrs Proceedings. 405: 381. DOI: 10.1557/Proc-405-381 |
0.421 |
|
1995 |
Chason E, Mayer TM, Kellerman BK. Sputter Roughening Instability on the Ge(001) Surface: Energy and Flux Dependence Mrs Proceedings. 396: 143. DOI: 10.1557/Proc-396-143 |
0.377 |
|
1995 |
Kellerman BK, Chason E, Floro JA, Picraux ST, White JM. Smoothing During Ion-Assisted Growth by Transient Ion Beam-Induced Defects Mrs Proceedings. 388: 349. DOI: 10.1557/Proc-388-349 |
0.408 |
|
1995 |
Kellerman BK, Floro JA, Chason E, Brice DK, Picraux ST, White JM. Defect production and recombination during low-energy ion processing Journal of Vacuum Science and Technology. 13: 972-978. DOI: 10.1116/1.579660 |
0.377 |
|
1995 |
Floro JA, Kellerman BK, Chason E, Picraux ST, Brice DK, Horn KM. Surface defect production on Ge(001) during low-energy ion bombardment Journal of Applied Physics. 77: 2351-2357. DOI: 10.1063/1.358757 |
0.376 |
|
1995 |
Kellerman BK, Chason E, Floro JA, Picraux ST, White JM. The role of transient ion‐induced defects in ion beam‐assisted growth Applied Physics Letters. 67: 1703-1705. DOI: 10.1063/1.115022 |
0.421 |
|
1994 |
Chason E, Mayer TM, Kellerman BK, McIlroy DT, Howard AJ. Roughening instability and evolution of the Ge(001) surface during ion sputtering. Physical Review Letters. 72: 3040-3043. PMID 10056052 DOI: 10.1103/Physrevlett.72.3040 |
0.417 |
|
1994 |
Chason E, Chason M. In situ x-ray reflectivity measurements of thin film structural evolution Journal of Vacuum Science and Technology. 12: 1565-1568. DOI: 10.1116/1.579356 |
0.344 |
|
1994 |
Mayer TM, Chason E, Howard AJ. Roughening instability and ion‐induced viscous relaxation of SiO2 surfaces Journal of Applied Physics. 76: 1633-1643. DOI: 10.1063/1.357748 |
0.411 |
|
1994 |
Horn KM, Chason E, Tsao JY, Floro JA, Picraux ST. Oxygen roughening of Ge(001) surfaces Surface Science. 320: 174-184. DOI: 10.1016/0039-6028(94)00509-5 |
0.326 |
|
1993 |
Chason E, Mayer TM, Howard AJ. Kinetics of surface roughening and smoothing during ion sputtering Mrs Proceedings. 317. DOI: 10.1557/Proc-317-91 |
0.408 |
|
1993 |
Floro JA, Kellerman BK, Chason E, Picraux ST, Brice DK, Horn KM. Intra-cascade surface recombination of point defects during ion bombardment of Ge (001) Mrs Proceedings. 316. DOI: 10.1557/Proc-316-993 |
0.379 |
|
1993 |
Chason E, Mayer TM, McIlroy D, Matzke CM. Ion bombardment of SiO2/Si and Si measured by in situ X-ray reflectivity Nuclear Inst. and Methods in Physics Research, B. 80: 742-746. DOI: 10.1016/0168-583X(93)90672-S |
0.421 |
|
1992 |
Picraux ST, Chason E, Mayer TM. Ion-Assisted Surface Processing of Electronic Materials Mrs Bulletin. 17: 52-57. DOI: 10.1557/S0883769400041476 |
0.318 |
|
1992 |
Cooper BH, Peale DR, Mclean JG, Phillips R, Chason E. Mass Flow and Stability of Nanoscale Features on AU(111) Mrs Proceedings. 280. DOI: 10.1557/Proc-280-37 |
0.317 |
|
1992 |
Chason E, Mayer TM, Payne A, Wu D. In situ energy dispersive x‐ray reflectivity measurements of H ion bombardment on SiO2/Si and Si Applied Physics Letters. 60: 2353-2355. DOI: 10.1063/1.107023 |
0.387 |
|
1991 |
Picraux ST, Horn KM, Chason E, Tsao JY, Bedrossian P, Klitsner T, Brice DK. Ge Surface Displacements Due to Low Energy Particles Mrs Proceedings. 236: 235. DOI: 10.1557/Proc-236-235 |
0.371 |
|
1991 |
Chason E, Bedrossian P, Tsao JY, Dodson BW, Picraux ST. Simulations of low-energy ion bombardment and epitaxial growth Mrs Proceedings. 235: 281. DOI: 10.1557/Proc-235-743 |
0.414 |
|
1991 |
Chason E, Dodson BW. Effect of step edge transition rates and anisotropy in simulations of epitaxial growth Journal of Vacuum Science and Technology. 9: 1545-1550. DOI: 10.1116/1.577659 |
0.353 |
|
1991 |
Bedrossian P, Houston JE, Tsao JY, Chason E, Picraux ST. Layer-by-layer sputtering and epitaxy of Si(100) Physical Review Letters. 67: 124-127. DOI: 10.1103/Physrevlett.67.124 |
0.348 |
|
1991 |
Horn KM, Tsao JY, Chason E, Brice DK, Picraux ST. Hydrogen ion beam smoothening of Ge(001) Journal of Applied Physics. 69: 243-249. DOI: 10.1063/1.347758 |
0.368 |
|
1991 |
Chason E, Bedrossian P, Houston JE, Tsao JY, Dodson BW, Picraux ST. Simulations of layer-by-layer sputtering during epitaxy Applied Physics Letters. 59: 3533-3535. DOI: 10.1063/1.105648 |
0.401 |
|
1991 |
Chason E, Aziz MJ. Effect of pressure on crystallization kinetics of cordierite glass Journal of Non-Crystalline Solids. 130: 204-210. DOI: 10.1016/0022-3093(91)90456-G |
0.311 |
|
1990 |
Chason E, Warwick DT. X-ray reflectivity measurements of surface roughness using energy dispersive detection Mrs Proceedings. 208: 351. DOI: 10.1557/Proc-208-351 |
0.328 |
|
1990 |
Chason E, Tsao JY, Horn KM, Picraux ST, Atwater HA. Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 2507-2511. DOI: 10.1116/1.576724 |
0.405 |
|
1990 |
Chason E, Bedrossian P, Horn KM, Tsao JY, Picraux ST. Ion beam enhanced epitaxial growth of Ge (001) Applied Physics Letters. 57: 1793-1795. DOI: 10.1063/1.104024 |
0.428 |
|
1990 |
Picraux ST, Brice DK, Horn KM, Tsao JY, Chason E. Near-threshold energy dependence of Xe-induced displacements on Ge(001)☆ Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 48: 414-418. DOI: 10.1016/0168-583X(90)90151-J |
0.367 |
|
1990 |
Chason E, Tsao JY. Adatoms, strings and epitaxy on singular surfaces Surface Science. 234: 361-370. DOI: 10.1016/0039-6028(90)90568-S |
0.374 |
|
1989 |
Tsao JY, Chason E, Koehler U, Hamers R. Dimer strings, anisotropic growth, and persistent layer-by-layer epitaxy. Physical Review B. 40: 11951-11954. PMID 9991808 DOI: 10.1103/Physrevb.40.11951 |
0.351 |
|
1989 |
Chason E, Tsao JY, Horn KM, Picraux ST. Dynamics of growth roughening and smoothening on Ge (001) Journal of Vacuum Science & Technology B. 7: 332-336. DOI: 10.1116/1.584744 |
0.406 |
|
1989 |
Tsao JY, Chason E, Horn KM, Brice DK, Picraux ST. Low-energy ion beams, molecular beam epitaxy, and surface morphology Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 39: 72-80. DOI: 10.1016/0168-583X(89)90744-1 |
0.394 |
|
1988 |
Horn KM, Chason E, Tsao JY, Picraux ST. Hydrogen Ion Beam Smoothening of Oxygen Roughened Ge(001) Surfaces Mrs Proceedings. 131. DOI: 10.1557/Proc-131-549 |
0.316 |
|
1988 |
Chason E, Horn KM, Tsao JY, Picraux ST. Argon ion bombardment during molecular beam epitaxy of Ge(001) Mrs Proceedings. 128: 35. DOI: 10.1557/Proc-128-35 |
0.4 |
|
1988 |
Chason E, Mizoguchi T. Volume-Dependent Diffusion and Densification in Amorphous Compositionally Modulated Fe-Ti Films* Zeitschrift FüR Physikalische Chemie. 156: 397-401. DOI: 10.1524/Zpch.1988.156.Part_1.397 |
0.323 |
|
1988 |
Chason E, Spaepen F. Pressure-induced structural changes in boron oxide glass Journal of Applied Physics. 64: 4435-4449. DOI: 10.1063/1.341266 |
0.514 |
|
1985 |
Chason E, Kondo H, Mizoguchi T, Cammarata RC, Spaepen F, Window B, Dunlop JB, Day RK. Amorphous Cu-Zr and Fe-Ti Compositionally Modulated Films Produced by Sputtering from Elemental Targets Mrs Proceedings. 58: 69. DOI: 10.1557/Proc-58-69 |
0.563 |
|
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