Year |
Citation |
Score |
2018 |
Ren D, Scofield AC, Farrell AC, Rong Z, Haddad MA, Laghumavarapu RB, Liang B, Huffaker DL. Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model. Nanoscale. PMID 29663009 DOI: 10.1039/C8Nr01908H |
0.355 |
|
2017 |
Nelson GT, Juang B, Slocum MA, Bittner ZS, Laghumavarapu RB, Huffaker DL, Hubbard SM. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell Applied Physics Letters. 111: 231104. DOI: 10.1063/1.4991548 |
0.496 |
|
2017 |
Debnath MC, Liang B, Laghumavarapu RB, Wang G, Das A, Juang B, Huffaker DL. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44matrix for use in intermediate band solar cells Journal of Applied Physics. 121: 214304. DOI: 10.1063/1.4984832 |
0.496 |
|
2016 |
Debnath MC, Mishima TD, Santos MB, Cheng Y, Whiteside VR, Sellers IR, Hossain K, Laghumavarapu RB, Liang BL, Huffaker DL. High-density InAs/GaAs1- xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells Journal of Applied Physics. 119. DOI: 10.1063/1.4943631 |
0.511 |
|
2015 |
Hubbard SM, Hellstroem S, Bittner ZS, Laghumavarapu RB, Huffaker D. Intermediate band solar cell design using InAs quantum dots in AlAsSb cladding 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355971 |
0.47 |
|
2015 |
Juang BC, Laghumavarapu RB, Foggo BJ, Simmonds PJ, Lin A, Liang B, Huffaker DL. GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays Applied Physics Letters. 106. DOI: 10.1063/1.4915258 |
0.476 |
|
2015 |
Zhao Z, Laghumavarapu RB, Simmonds PJ, Ji H, Liang B, Huffaker DL. Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.049 |
0.508 |
|
2014 |
Simmonds PJ, Sun M, Laghumavarapu RB, Liang B, Norman AG, Luo JW, Huffaker DL. Improved quantum dot stacking for intermediate band solar cells using strain compensation. Nanotechnology. 25: 445402. PMID 25319397 DOI: 10.1088/0957-4484/25/44/445402 |
0.417 |
|
2014 |
Bittner ZS, Laghumavarapu RB, Hellstroem S, Huffaker D, Liang B, Hubbard SM. Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 3626-3628. DOI: 10.1109/PVSC.2014.6924892 |
0.446 |
|
2014 |
Bittner ZS, Hellstroem S, Polly SJ, Laghumavarapu RB, Liang B, Huffaker DL, Hubbard SM. Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy Applied Physics Letters. 105. DOI: 10.1063/1.4904076 |
0.501 |
|
2014 |
Borrego JM, Brown E, Greiff P, Huffaker DL, Laghumavarapu RB, Kim J, Dutta PS. Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate Journal of Renewable and Sustainable Energy. 6. DOI: 10.1063/1.4828368 |
0.45 |
|
2013 |
Brockett TJ, Rajagopalan H, Laghumavarapu RB, Hufakker D, Rahmat-Samii Y. Electromagnetic characterization of high absorption sub-wavelength optical nanostructure photovoltaics for solar energy harvesting Ieee Transactions On Antennas and Propagation. 61: 1518-1527. DOI: 10.1109/Tap.2012.2237371 |
0.383 |
|
2013 |
Sun M, Simmonds PJ, Laghumavarapu RB, Lin A, Reyner CJ, Liang B, Huffaker DL. Towards intermediate-band solar cells with InAs/AlAsSb quantum dots Conference Record of the Ieee Photovoltaic Specialists Conference. 3493-3496. DOI: 10.1109/PVSC.2013.6744245 |
0.47 |
|
2013 |
Laghumavarapu RB, Liang BL, Bittner Z, Navruz TS, Hubbard SM, Norman A, Huffaker DL. GaSb/InGaAs quantum dot-well solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 292-295. DOI: 10.1109/PVSC.2013.6744150 |
0.496 |
|
2013 |
Laghumavarapu RB, Liang BL, Bittner ZS, Navruz TS, Hubbard SM, Norman A, Huffaker DL. GaSb/InGaAs quantum dot-well hybrid structure active regions in solar cells Solar Energy Materials and Solar Cells. 114: 165-171. DOI: 10.1016/J.Solmat.2013.02.027 |
0.546 |
|
2010 |
Laghumavarapu RB, Mariani G, De Villers BT, Shapiro J, Senanayake P, Lin A, Schwartz BJ, Huffaker DL. Hybrid solar cells using gaas nanopillars Conference Record of the Ieee Photovoltaic Specialists Conference. 943-945. DOI: 10.1109/PVSC.2010.5614637 |
0.361 |
|
2010 |
Mariani G, Laghumavarapu RB, Tremolet De Villers B, Shapiro J, Senanayake P, Lin A, Schwartz BJ, Huffaker DL. Hybrid conjugated polymer solar cells using patterned GaAs nanopillars Applied Physics Letters. 97. DOI: 10.1063/1.3459961 |
0.475 |
|
2008 |
Tatebayashi J, Liang BL, Laghumavarapu RB, Bussian DA, Htoon H, Klimov V, Balakrishnan G, Dawson LR, Huffaker DL. Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well. Nanotechnology. 19: 295704. PMID 21730609 DOI: 10.1088/0957-4484/19/29/295704 |
0.45 |
|
2007 |
Albrecht AR, Laghumavarapu RB, Imangholi B, Sheik-Bahae M, Malloy KJ. Phase fluorometry for semiconductor lifetime measurement Proceedings of Spie - the International Society For Optical Engineering. 6461. DOI: 10.1117/12.710064 |
0.317 |
|
2007 |
Laghumavarapu RB, Nuntawong N, Albrecht AR, Huffaker DL. Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling Proceedings of Spie - the International Society For Optical Engineering. 6461. DOI: 10.1117/12.708337 |
0.393 |
|
2007 |
Laghumavarapu RB, El-Emawy M, Nuntawong N, Moscho A, Lester LF, Huffaker DL. Improved device performance of InAsGaAs quantum dot solar cells with GaP strain compensation layers Applied Physics Letters. 91. DOI: 10.1063/1.2816904 |
0.604 |
|
2007 |
Laghumavarapu RB, Moscho A, Khoshakhlagh A, El-Emawy M, Lester LF, Huffaker DL. GaSbGaAs type II quantum dot solar cells for enhanced infrared spectral response Applied Physics Letters. 90. DOI: 10.1063/1.2734492 |
0.598 |
|
2007 |
Tatebayashi J, Laghumavarapu RB, Nuntawong N, Huffaker DL. Measurement of electro-optic coefficients of 1.3 μm self-assembled InAs/GaAs quantum dots Electronics Letters. 43: 410-412. DOI: 10.1049/El:20070245 |
0.398 |
|
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