Guannan Chen, Ph.D.
Affiliations: | 2014 | Materials Science and Engineering | Drexel University, Philadelphia, PA, United States |
Area:
experimental condensed matter physics & materials scienceGoogle:
"Guannan Chen"Mean distance: 13.47
Parents
Sign in to add mentor| Jonathan E. Spanier | grad student | 2014 | Drexel | |
| (Tunable Interface Non-linear Electron Transport in Semiconductor Nanowire Heterostructure and Its Application in Optoelectronics.) | ||||
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Publications
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| Chen G, Gallo EM, Burger J, et al. (2019) Publisher's Note: “On direct-writing methods for electrically contacting GaAs and Ge nanowire devices” [Appl. Phys. Lett. 96, 223107 (2010)] Applied Physics Letters. 115: 219901 |
| Chen G, McGuckin T, Hawley CJ, et al. (2015) Subsurface imaging of coupled carrier transport in GaAs/AlGaAs core-shell nanowires. Nano Letters. 15: 75-9 |
| Akbashev AR, Chen G, Spanier JE. (2014) A facile route for producing single-crystalline epitaxial perovskite oxide thin films. Nano Letters. 14: 44-9 |
| Grinberg I, West DV, Torres M, et al. (2013) Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials. Nature. 503: 509-12 |
| Chen G, Sun G, Ding YJ, et al. (2013) Direct measurement of band edge discontinuity in individual core-shell nanowires by photocurrent spectroscopy. Nano Letters. 13: 4152-7 |
| Yan F, Chen G, Lu L, et al. (2013) Local probing of magnetoelectric coupling and magnetoelastic control of switching in BiFeO3-CoFe2O4 thin-film nanocomposite Applied Physics Letters. 103 |
| Golalikhani M, Lei QY, Chen G, et al. (2013) Stoichiometry of LaAlO3 films grown on SrTiO3 by pulsed laser deposition Journal of Applied Physics. 114 |
| Yan F, Chen G, Lu L, et al. (2012) Dynamics of photogenerated surface charge on BiFeO3 films. Acs Nano. 6: 2353-60 |
| Hawley CJ, Beatty BR, Chen G, et al. (2012) Shape-controlled vapor-transport growth of tellurium nanowires Crystal Growth and Design. 12: 2789-2793 |
| Sbrockey NM, Luong M, Gallo EM, et al. (2012) LaAlO 3/SrTiO 3 epitaxial heterostructures by atomic layer deposition Journal of Electronic Materials. 41: 819-823 |