Nicholas A. Stoute, Ph.D.
Affiliations: | 2011 | North Carolina State University, Raleigh, NC |
Area:
Electronic Materials, OpticsGoogle:
"Nicholas Stoute"Mean distance: 14.47
Parents
Sign in to add mentorDavid Erik Aspnes | grad student | 2011 | NCSU | |
(Properties of Closed-Shell Titanium Silicate and Gallium-Containing Semiconductor Systems.) |
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Publications
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Morales D, Stoute NA, Yu Z, et al. (2016) Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides Applied Physics Letters. 109: 091905 |
Choi SG, Aspnes DE, Stoute NA, et al. (2008) Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters Physica Status Solidi (a) Applications and Materials Science. 205: 884-887 |
Lucovsky G, Fulton CC, Ju BS, et al. (2007) Corrigendum to: "Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3". [Radiat. Phys. Chem. 75 (2006) 1591-1595] (DOI:10.1016/j.radphyschem.2006.05.004) Radiation Physics and Chemistry. 76: 907 |
Lucovsky G, Fulton CC, Ju BS, et al. (2006) Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 Radiation Physics and Chemistry. 75: 1591-1595 |
Lucovsky G, Hinkle CL, Fulton CC, et al. (2006) Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2 Radiation Physics and Chemistry. 75: 2097-2101 |
Lucovsky G, Hong JG, Fulton CC, et al. (2005) Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability. 45: 827-830 |