Xuefeng Hua, Ph.D.
Affiliations: | 2005 | University of Maryland, College Park, College Park, MD |
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"Xuefeng Hua"Mean distance: 3011.56
Parents
Sign in to add mentorGottlieb Oehrlein | grad student | 2005 | University of Maryland | |
(Mechanistic studies of plasma -surface interactions during nanoscale patterning of advanced electronic materials using plasma.) |
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Publications
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Kuo MS, Pal AR, Oehrlein GS, et al. (2010) Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. II. Interaction with preceding fluorocarbon plasma ultralow k etching processes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 961-967 |
Kuo MS, Hua X, Oehrlein GS, et al. (2010) Influence of C4 F8 /Ar -based etching and H 2 -based remote plasma ashing processes on ultralow k materials modifications Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 284-294 |
Ling L, Hua X, Zheng L, et al. (2008) Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C4F 8Ar and CF4/H2 based capacitively coupled plasmas Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 11-22 |
Hua X, Engelmann S, Oehrlein GS, et al. (2006) Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1850-1858 |
Hua X, Kuo MS, Oehrlein GS, et al. (2006) Damage of ultralow k materials during photoresist mask stripping process Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1238-1247 |
Oehrlein GS, Hua X, Stolz C, et al. (2006) Nanoscale layer etching by short-time exposure of substrates to gas discharges using moving patterned shutter Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 279-283 |
Lazzeri P, Hua X, Oehrlein G, et al. (2006) ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas Applied Surface Science. 252: 7186-7189 |
Lazzeri P, Hua X, Oehrlein GS, et al. (2005) Porosity-induced effects during C4 F8 90% Ar plasma etching of silica-based ultralow- k dielectrics Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1491-1498 |
Zheng L, Ling L, Hua X, et al. (2005) Studies of film deposition in fluorocarbon plasmas employing a small gap structure Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 634-642 |
Hua X, Stolz C, Oehrlein GS, et al. (2005) Plasma-surface interactions of nanoporous silica during plasma-based pattern transfer using C 4F 8 and C 4F 8/Ar gas mixtures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 151-164 |