Divine P. Kumah, Ph.D.

Affiliations: 
2009 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
x-ray physics, materials research, magnetic and ferroelectric nanostructures
Google:
"https://scholar.google.com/citations?hl=en&pli=1&user=f7KTBKgAAAAJ"
Mean distance: 14.96
 

Parents

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Roy Clarke grad student 2009 University of Michigan
 (Direct x-ray studies of epitaxial semiconductor quantum dots.)
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Publications

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Lim ZH, Chrysler M, Kumar A, et al. (2020) Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates Journal of Vacuum Science & Technology A. 38: 013406
Penn AN, Koohfar S, Kumah DP, et al. (2020) On the redistribution of charge in La0.7Sr0.3CrO3/La0.7Sr0.3MnO3 multilayer thin films Aip Advances. 10: 045113
Al-Tawhid A, Frick JR, Dougherty DB, et al. (2019) Growth-temperature dependence of conductivity at the LaCrO3/SrTiO3 (001) interface Journal of Vacuum Science & Technology A. 37: 021102
Chen T, Ahmadi-Majlan K, Lim ZH, et al. (2018) Interfacial structure of SrZrxTi1−xO3 films on Ge Applied Physics Letters. 113: 201601
Ahmadi-Majlan K, Chen T, Lim ZH, et al. (2018) Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness Applied Physics Letters. 112: 193104
Dogan M, Fernandez-Pena S, Kornblum L, et al. (2017) Single atomic layer ferroelectric on silicon. Nano Letters
Disa AS, Georgescu AB, Hart JL, et al. (2017) Control of hidden ground-state order in NdNiO3 superlattices Physical Review Materials. 1
Koohfar S, Disa AS, Marshall MSJ, et al. (2017) Structural distortions at polar manganite interfaces Physical Review B. 96
Kumah DP, Dogan M, Ngai JH, et al. (2016) Engineered Unique Elastic Modes at a BaTiO_{3}/(2×1)-Ge(001) Interface. Physical Review Letters. 116: 106101
Ngai JH, Ahmadi-Majlan K, Moghadam J, et al. (2016) Electrically Coupling Multifunctional Oxides to Semiconductors: A Route to Novel Material Functionalities Mrs Advances. 1: 255-263
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