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Titash Rakshit, Ph.D.

Affiliations: 
2004 Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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"Titash Rakshit"
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Supriyo Datta grad student 2004 Purdue
 (Molecular electronics on silicon.)

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Rakshit T, Banerjee S, Mukhopadhyay R. (2010) Near-metallic behavior of warm holoferritin molecules on a gold(111) surface. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 16005-12
Rakshit T, Liang GC, Ghosh AW, et al. (2005) Molecules on silicon: Self-consistent first-principles theory and calibration to experiments Physical Review B - Condensed Matter and Materials Physics. 72
Rakshit T, Liang GC, Ghosh AW, et al. (2005) Modeling challenges in molecular electronics on silicon Journal of Computational Electronics. 4: 83-86
Rakshit T, Liang GC, Ghosh AW, et al. (2004) Silicon-based molecular electronics Nano Letters. 4: 1803-1807
Ghosh AW, Rakshit T, Datta S. (2004) Gating of a molecular transistor: Electrostatic and conformational Nano Letters. 4: 565-568
Liang G, Ghosh A, Rakshit T, et al. (2004) Hybrid-basis modeling of electron transport through molecules on Silicon 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 253-254
Ghosh AW, Liang GC, Rakshit T, et al. (2004) Molecular elements on silicon substrates: Modeling issues and device prospects 2004 4th Ieee Conference On Nanotechnology. 276
Rakshit T, Liang GC, Ghosh A, et al. (2003) Egative differential resistance in silicon-molecule hetero structure 2003 International Semiconductor Device Research Symposium, Isdrs 2003 - Proceedings. 210-211
Damle P, Rakshit T, Paulsson M, et al. (2002) Current-voltage characteristics of molecular conductors: Two versus three terminal Ieee Transactions On Nanotechnology. 1: 145-152
Howell S, Kuila D, Ghosh AW, et al. (2001) Surface potentials of conjugated molecules on metal surfaces: Measurements using electrostatic force microscopy and calculations using a preliminary physically-based model Materials Research Society Symposium - Proceedings. 636
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