Nien-Po Chen, Ph.D.
Affiliations: | 2001 | Purdue University, West Lafayette, IN, United States |
Area:
Condensed Matter Physics, Electronics and Electrical EngineeringGoogle:
"Nien-Po Chen"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Ronald Reifenberger | grad student | 2001 | Purdue | |
| (Modeling of electronic states in low-temperature-grown gallium arsenide and conduction properties of tunneling based contact.) | ||||
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Publications
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| Chu WP, Lin JS, Lin TC, et al. (2012) Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells Optics Communications. 285: 3325-3328 |
| Lin S, Lin J, Chen N, et al. (2011) Synthesis of ultraviolet curable encapsulating adhesives and their package applications for organic optoelectronic devices Solid State Sciences. 13: 1889-1895 |
| Chang HH, Tsai WS, Chang CP, et al. (2011) A new tricarbazole phosphine oxide bipolar host for efficient single-layer blue PhOLED Organic Electronics: Physics, Materials, Applications. 12: 2025-2032 |
| Chung M, Lin J, Hsieh T, et al. (2011) Preparation of organic/inorganic hybrid nanocomposites by ultraviolet irradiation and their packaging applications for organic optoelectronic devices Applied Surface Science. 257: 9142-9151 |
| Lin J, Lin S, Chen N, et al. (2010) Manufacture of brightness enhancement films (BEFs) by ultraviolet (UV) irradiation and their applications for organic light emitting diodes (OLEDs) Synthetic Metals. 160: 1493-1500 |
| Ko C, Lin J, Chen C, et al. (2009) A Silver-Coated Sinusoidal Sub-Wavelength Structure With Polarization Feature For Light Emitting Diode Surface Review and Letters. 16: 631-634 |
| Tu C, Chen N, Liu J. (2009) The influence of Si doping to the characteristics of AlGaAs / AlAs distributed Bragg reflectors Proceedings of Spie. 7422: 742216 |
| Chen NP, Janes DB. (2008) Distribution model of arsenic antisite defects in LTG:GaAs Journal of Physics and Chemistry of Solids. 69: 325-329 |
| Lodha S, Janes DB, Chen NP. (2003) Unpinned interface Fermi-level in Schottky contacts to n-GaAs capped with low-temperature-grown GaAs; experiments and modeling using defect state distributions Journal of Applied Physics. 93: 2772-2779 |
| Lodha S, Janes DB, Chen NP. (2002) Fermi level unpinning in ex situ Schottky contacts on n-GaAs capped with low-temperature-grown GaAs Applied Physics Letters. 80: 4452-4454 |