Agajan Suvkhanov, Ph.D.

Affiliations: 
2001 University of North Carolina, Chapel Hill, Chapel Hill, NC 
Area:
Condensed Matter Physics
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"Agajan Suvkhanov"
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Parents

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Nalin R. Parikh grad student 2001 UNC Chapel Hill
 (Ion implantation damage, annealing and dopant activation in epitaxial gallium nitride.)
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Publications

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Suvkhanov A, Mirabedini M, Hornback V, et al. (2004) X-ray and secondary ion mass spectrometry investigation of activation behavior of self-preamorphized silicon substrate Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 355-357
Suvkhanov A, Mirabedini M, Hornback V, et al. (2002) Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels Proceedings of the International Conference On Ion Implantation Technology. 22: 29-32
Suvkhanov A, Parikh N, Usov I, et al. (2000) Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN Materials Science Forum. 338
Joshkin VA, Parker CA, Bedair SM, et al. (1998) Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC Applied Physics Letters. 72: 2838-2840
Parikh N, Suvkhanov A, Lioubtchenko M, et al. (1997) Ion implantation of epitaxial GaN films: Damage, doping and activation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 127: 463-466
Lioubtchenko M, Hunn J, Suvkhanov A, et al. (1996) Formation of a buried soft layer in SiC for 'compliant substrate' by ion implantation Materials Research Society Symposium - Proceedings. 438: 265-270
Vispute RD, Narayan J, Dovidenko K, et al. (1996) Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition Journal of Applied Physics. 80: 6720-6724
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