Eric A. Joseph

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2000 State University of New York, Albany, Albany, NY, United States 
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Walton SG, Boris DR, Rosenberg SG, et al. (2021) Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films Journal of Vacuum Science & Technology A. 39: 033002
Pranda A, Lin K, Engelmann S, et al. (2020) Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist Journal of Vacuum Science and Technology. 38: 52601
Collins J, de Souza JP, Lee YS, et al. (2020) Fundamentals, impedance, and performance of solid-state Li-metal microbatteries Journal of Vacuum Science & Technology A. 38: 033212
Lin K, Li C, Engelmann S, et al. (2020) Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition Journal of Vacuum Science & Technology A. 38: 032601
Lin K, Li C, Engelmann S, et al. (2018) Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors Journal of Vacuum Science & Technology A. 36: 040601
Marchack N, Miyazoe H, Bruce RL, et al. (2018) Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applications Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 031801
Miyazoe H, Marchack N, Bruce RL, et al. (2018) Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 032201
Metzler D, Li C, Engelmann S, et al. (2017) Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma. The Journal of Chemical Physics. 146: 052801
Wang C, Nam SW, Cotte JM, et al. (2017) Wafer-scale integration of sacrificial nanofluidic chips for detecting and manipulating single DNA molecules. Nature Communications. 8: 14243
Engelmann SU, Bruce RL, Joseph EA, et al. (2017) Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 051803
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