Abdullah Yar, Ph.D
Affiliations: | Institute of Theoretical Physics | University of Regensburg, Regensburg, Bayern, Germany |
Area:
Nanoelectromechanicsl systemsGoogle:
"Abdullah Yar"Mean distance: 16.42 | S | N | B | C | P |
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Publications
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Yar A, Zubair M, Sabeeh K. (2019) Optical radiation induced chaotic dynamics of electrons in a uniform magnetic field. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 32: 095403 |
Yar A, Ullah Khan S. (2019) Chaotic transport of electron wave packet in Weyl semimetal slab. Physical Review. E. 99: 052213 |
Zada Z, Laref A, Murtaza G, et al. (2019) First-principles calculations of electronic and magnetic properties of XMn2Y2 (X = Ca, Sr; Y = Sb, Bi) compounds International Journal of Modern Physics B. 33: 1950199 |
Yar A. (2019) Spin and charge transport of electron on a mesoscopic ring of topological insulator thin film in uniform magnetic field Journal of Applied Physics. 126: 015302 |
Yar A, Sabeeh K. (2019) Hybridization effects on persistent currents in rings of topological insulators Physica E: Low-Dimensional Systems and Nanostructures. 114: 113624 |
Ullah S, Ullah H, Yar A, et al. (2018) First-principles investigation of the electronic band structures and optical properties of quaternary ABaMQ4 (A = Rb, Cs; M = P, V; and Q = S) metal chalcogenides International Journal of Modern Physics B. 32: 1850337 |
Yar A, Naeem M, Khan SU, et al. (2017) Hybridization effects on wave packet dynamics in Topological Insulator thin films. Journal of Physics. Condensed Matter : An Institute of Physics Journal |
Basit A, Murtaza G, Mahmood A, et al. (2017) Specific features investigation of the AE 2 ZnN 2 (AE=Ca, Sr, Ba) compounds from indirect to direct band gap: DFT study Materials Science in Semiconductor Processing. 57: 116-123 |
Ullah N, Zhang RQ, Murtaza G, et al. (2016) Stacking nature and band gap opening of graphene: Perspective for optoelectronic applications Solid State Communications. 246: 54-58 |
Faizan M, Murtaza G, Azam S, et al. (2016) Elastic and optoelectronic properties of novel Ag3AuSe2 and Ag3AuTe2 semiconductors Materials Science in Semiconductor Processing. 52: 8-15 |