Richard H. Bube
Affiliations: | 1962-1992 | Materials Science and Engineering | Stanford University, Palo Alto, CA |
Website:
https://news.stanford.edu/2018/09/27/richard-h-bube-expert-photoelectronic-materials-dies-90/Google:
"Richard Howard Bube" OR "Richard H. Bube"Bio:
(1927 - 2018)
https://www.legacy.com/us/obituaries/mercurynews/name/richard-bube-obituary?id=9547735
https://archive.org/details/JohnArchibaldWheelerAStudyOfMentoringInModernPhysics/JohnArchibaldWheeler-AStudyInMentoring-Part03-AppendicesCDAndE/page/n71/mode/2up
Mean distance: (not calculated yet)
Parents
Sign in to add mentorRobert Hofstadter | grad student | 1950 | Princeton | |
(Luminescence and Trapping in Zinc-sulfide-type Phosphors) |
Children
Sign in to add traineeRobert S. Feigelson | grad student | Stanford | |
Gerald B. Stringfellow | grad student | 1967 | Stanford |
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Publications
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Redfield D, Bube R. (1994) Explanation of Light-Enhanced Annealing of Defects in Amorphous Silicon Mrs Proceedings. 336: 263 |
Redfield D, Bube R. (1993) Metastable Defects and Stretched Exponentials Mrs Proceedings. 325: 335 |
Redfield D, Bube R. (1993) Thermal and Optical Stretched Exponentials in Defect Kinetics in a-Si:H Mrs Proceedings. 297 |
Benatar L, Grimbergen M, Fahrenbruch A, et al. (1992) Isolation of Temperature Effects on the Kinetics of Light Induced Defect Generation in a-Si:H Mrs Proceedings. 258 |
Grimbergen M, Lopez-Otero A, Fahrenbruch A, et al. (1992) Comparison of Electron Beam-Induced and Light-Induced Defect Saturation in a-Si:H Mrs Proceedings. 258 |
Redfield D, Bube RH. (1990) Identification of defects in amorphous silicon. Physical Review Letters. 65: 464-467 |