Christopher P Anderson
Affiliations: | Stanford University, Palo Alto, CA | ||
University of Chicago, Chicago, IL | |||
University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Quantum InformationWebsite:
https://sites.google.com/view/cpanderson/Google:
"Christopher Anderson"Mean distance: (not calculated yet)
Parents
Sign in to add mentorRoseanne J. Sension | research assistant | (Chemistry Tree) | |
Vanessa Sih | research assistant | ||
David D. Awschalom | grad student | ||
Jelena Vuckovic | post-doc | (E-Tree) |
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Publications
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Kanai S, Heremans FJ, Seo H, et al. (2022) Generalized scaling of spin qubit coherence in over 12,000 host materials. Proceedings of the National Academy of Sciences of the United States of America. 119: e2121808119 |
Anderson CP, Glen EO, Zeledon C, et al. (2022) Five-second coherence of a single spin with single-shot readout in silicon carbide. Science Advances. 8: eabm5912 |
Wolfowicz G, Heremans FJ, Anderson CP, et al. (2021) Quantum guidelines for solid-state spin defects Nature Reviews Materials. 6: 906-925 |
Bourassa A, Anderson CP, Miao KC, et al. (2020) Entanglement and control of single nuclear spins in isotopically engineered silicon carbide. Nature Materials |
Miao KC, Blanton JP, Anderson CP, et al. (2020) Universal coherence protection in a solid-state spin qubit. Science (New York, N.Y.) |
Wolfowicz G, Anderson CP, Diler B, et al. (2020) Vanadium spin qubits as telecom quantum emitters in silicon carbide. Science Advances. 6: eaaz1192 |
Crook AL, Anderson CP, Miao KC, et al. (2020) Purcell enhancement of a single silicon carbide color center with coherent spin control. Nano Letters |
Son NT, Anderson CP, Bourassa A, et al. (2020) Developing silicon carbide for quantum spintronics Applied Physics Letters. 116: 190501 |
Diler B, Whiteley SJ, Anderson CP, et al. (2020) Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide Npj Quantum Information. 6 |
Anderson CP, Bourassa A, Miao KC, et al. (2019) Electrical and optical control of single spins integrated in scalable semiconductor devices. Science (New York, N.Y.). 366: 1225-1230 |