Patrick Roche, PhD
Affiliations: | University College London, London, United Kingdom |
Area:
Infrared astronomyWebsite:
http://www.hertford.ox.ac.uk/about/people/professor-pat-rocheGoogle:
"https://www.google.co.uk/webhp?sourceid=chrome-instant&ion=1&espv=2&es_th=1&ie=UTF-8#q=pat%20roche%20oxford"Mean distance: 12.54
Cross-listing: Astronomy Tree
Children
Sign in to add trainee| Benjamin James Spinks Pope | grad student | Oxford | |
| Myrto Symeonidis | grad student | 2008 | Oxford University UK |
BETA: Related publications
See more...
Publications
|
You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect. |
| Malou F, Gasiot G, Chevallier R, et al. (2014) TID and SEE characterization of Rad-Hardened 1.2GHz PLL IP from new ST CMOS 65nm space technology Ieee Radiation Effects Data Workshop. 2015 |
| Malou F, Gasiot G, Chevallier R, et al. (2014) TID and SEE characterization of Rad-Hardened 1.2GHz PLL IP from new ST CMOS 65nm space technology Ieee Radiation Effects Data Workshop. 2015 |
| Autran JL, Munteanu D, Sauze S, et al. (2014) Altitude and underground real-time ser testing of SRAMs manufactured in CMOS bulk 130, 65 and 40 nm Ieee Radiation Effects Data Workshop. 2015 |
| Glorieux M, Clerc S, Gasiot G, et al. (2014) 65 nm fault tolerant latch architecture based on transient propagation blocking Ieee International Reliability Physics Symposium Proceedings. SE.1.1-SE.1.5 |
| Glorieux M, Clerc S, Gasiot G, et al. (2014) 65 nm fault tolerant latch architecture based on transient propagation blocking Ieee International Reliability Physics Symposium Proceedings. SE.1.1-SE.1.5 |
| Bottoni C, Glorieux M, Daveau JM, et al. (2014) Heavy ions test result on a 65nm Sparc-V8 radiation-hard microprocessor Ieee International Reliability Physics Symposium Proceedings. 5F.5.1-5F.5.6 |
| Bottoni C, Glorieux M, Daveau JM, et al. (2014) Heavy ions test result on a 65nm Sparc-V8 radiation-hard microprocessor Ieee International Reliability Physics Symposium Proceedings. 5F.5.1-5F.5.6 |
| Abouzeid F, Bienfait A, Akyel KC, et al. (2013) Scalable 0.35V to 1.2V SRAM bitcell design from 65nm CMOS to 28nm FDSOI European Solid-State Circuits Conference. 205-208 |