Nicolas Rouger, PhD
Affiliations: | G2elab, Grenoble | CNRS, Paris, Île-de-France, France |
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"Nicolas Rouger"Mean distance: 13552
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Publications
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| Bau P, Cousineau M, Cougo B, et al. (2020) CMOS Active Gate Driver for Closed-Loop d v /d t Control of GaN Transistors Ieee Transactions On Power Electronics. 35: 13322-13332 |
| Donato N, Rouger N, Pernot J, et al. (2020) Diamond power devices: state of the art, modelling, figures of merit and future perspective Journal of Physics D. 53: 93001 |
| Barazi Y, Rouger N, Richardeau F. (2020) Comparison between ig integration and vgs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors Mathematics and Computers in Simulation |
| Rouger N, Maréchal A. (2019) Design of Diamond Power Devices: Application to Schottky Barrier Diodes Energies. 12: 2387 |
| Pham TT, Pinero JC, Marechal A, et al. (2018) Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors Ieee Transactions On Electron Devices. 65: 1830-1837 |
| Pham TT, Gutiérrez M, Masante C, et al. (2018) High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication Applied Physics Letters. 112: 102103 |
| Pham TT, Maréchal A, Muret P, et al. (2018) Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance Journal of Applied Physics. 123: 161523 |
| Driche K, Umezawa H, Rouger N, et al. (2017) Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients Japanese Journal of Applied Physics. 56 |
| Pham T, Pernot J, Perez G, et al. (2017) Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor Ieee Electron Device Letters. 38: 1571-1574 |
| Pham TT, Rouger N, Masante C, et al. (2017) Deep depletion concept for diamond MOSFET Applied Physics Letters. 111: 173503 |