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Marie Wintrebert-Fouquet - Publications

Affiliations: 
1996-2001 Electronics Macquarie University, Macquarie Park, New South Wales, Australia 
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29 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Chen PPT, Downes JE, Fernandes AJ, Butcher KSA, Wintrebert-Fouquet M, Wuhrer R, Phillips MR. Effects of crystallinity and chemical variation on apparent band-gap shift in polycrystalline indium nitride Thin Solid Films. 519: 1831-1836. DOI: 10.1016/J.Tsf.2010.10.013  0.561
2008 Martin C, Butcher KSA, Wintrebert-Fouquet M, Fernandes A, Dabbs T, Chen PPT, Carmen R. Modeling and experimental analysis of RPCVD based nitride film growth Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.762537  0.362
2008 Wintrebert-Fouquet M, Butcher KSA, Guy IL, Zheng Z. Piezoelectric coefficient of InN films prepared by radio-frequency sputtering Thin Solid Films. 516: 7267-7270. DOI: 10.1016/J.Tsf.2007.08.009  0.483
2007 JongWah JW, Butcher KS, Wintrebert-Fouquet M, Dawes JM, Ferris JM. Optical and electronic properties of diatoms Optics Infobase Conference Papers. DOI: 10.1364/Fio.2007.Jsua43  0.305
2007 Butcher KSA, Fernandes AJ, Chen PPT, Wintrebert-Fouquet M, Timmers H, Shrestha SK, Hirshy H, Perks RM, Usher BF. The nature of nitrogen related point defects in common forms of InN Journal of Applied Physics. 101. DOI: 10.1063/1.2736654  0.475
2007 Wintrebert-Fouquet M, Butcher KSA, Chen PPT, Wuhrer R. Nitride film growth morphology using remote plasma enhanced chemical vapor deposition Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2285-2288. DOI: 10.1002/Pssc.200674728  0.538
2006 Chen PPT, Butcher KSA, Wintrebert-Fouquet M, Wuhrer R, Phillips MR, Prince KE, Timmers H, Shrestha SK, Usher BF. Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD Journal of Crystal Growth. 288: 241-246. DOI: 10.1016/J.Jcrysgro.2005.12.005  0.522
2006 Timmers H, Butcher KSA, Shrestha SK, Chen PPT, Wintrebert-Fouquet M, Dogra R. Compositional and structural characterization of indium nitride using swift ions Journal of Crystal Growth. 288: 236-240. DOI: 10.1016/J.Jcrysgro.2005.12.004  0.465
2006 Butcher KSA, Hirshy H, Perks RM, Wintrebert-Fouquet M, Chen PPT. Stoichiometry effects and the Moss-Burstein effect for InN Physica Status Solidi (a) Applications and Materials Science. 203: 66-74. DOI: 10.1002/Pssa.200563504  0.471
2005 Chen PPT, Butcher KSA, Wintrebert-Fouquet M, Prince KE. Properties of InN grown by remote plasma enhanced chemical vapour deposition Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 85-88. DOI: 10.1109/COMMAD.2004.1577498  0.421
2005 Shrestha SK, Timmers H, Butcher KSA, Wintrebert-Fouquet M, Chen PPT. Nitrogen depletion of indium nitride films during Elastic Recoil Detection analysis Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 234: 291-307. DOI: 10.1016/J.Nimb.2005.01.022  0.487
2005 Butcher KSA, Ferris JM, Phillips MR, Wintrebert-Fouquet M, Jong Wah JW, Jovanovic N, Vyverman W, Chepurnov VA. A luminescence study of porous diatoms Materials Science and Engineering C. 25: 658-663. DOI: 10.1016/J.Msec.2005.06.049  0.372
2005 Scott K, Butcher A, Wintrebert-Fouquet M, Chen PPT, Wuhrer R, Phillips MR. Revisiting electrochromism in InN Physica Status Solidi C: Conferences. 2: 2293-2296. DOI: 10.1002/Pssc.200461560  0.476
2005 Scott K, Butcher A, Wintrebert-Fouquet M, Chen PPT, Prince KE, Timmers H, Shrestha SK, Shubina TV, Ivanov SV, Wuhrer R, Phillips MR, Monemar B. Non-stoichiometry and non-homogeneity in InN Physica Status Solidi C: Conferences. 2: 2263-2266. DOI: 10.1002/Pssc.200461387  0.49
2005 Kuball M, Pomeroy JW, Wintrebert-Fouquet M, Butcher KSA, Lu H, Schaff WJ, Shubina TV, Ivanov SV, Vasson A, Leymarie J. Resonant Raman spectroscopy on InN Physica Status Solidi (a) Applications and Materials Science. 202: 763-767. DOI: 10.1002/Pssa.200461305  0.473
2004 Alexandrov D, Scott K, Butcher A, Wintrebert-Fouquet M. Energy band gaps of InN containing oxygen and of the inxAl 1-xN interface layer formed during InN film growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 954-961. DOI: 10.1116/1.1633767  0.435
2004 Butcher KSA, Wintrebert-Fouquet M, Chen PPT, Tansley TL, Dou H, Shrestha SK, Timmers H, Kuball M, Prince KE, Bradby JE. Nitrogen-rich indium nitride Journal of Applied Physics. 95: 6124-6128. DOI: 10.1063/1.1711173  0.493
2004 Shrestha SK, Butcher KSA, Wintrebert-Fouquet M, Timmers H. Reliable ERD analysis of group-III nitrides despite severe nitrogen depletion Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 686-692. DOI: 10.1016/J.Nimb.2004.01.143  0.487
2004 Wintrebert-Fouquet M, Butcher KSA, Chen PPT. InN grown by remote plasma-enhanced chemical vapor deposition Journal of Crystal Growth. 269: 134-138. DOI: 10.1016/J.Jcrysgro.2004.05.043  0.533
2004 Alexandrov D, Butcher KSA, Wintrebert-Fouquet M. Absorption and photoluminescence features caused by defects in InN Journal of Crystal Growth. 269: 77-86. DOI: 10.1016/J.Jcrysgro.2004.05.036  0.451
2004 Guy IL, Zheng Z, Wintrebert-Fouquet M, Butcher KSA, Chen P, Tansley TL. Piezoelectricity in indium nitride Journal of Crystal Growth. 269: 72-76. DOI: 10.1016/J.Jcrysgro.2004.05.035  0.413
2004 Kuball M, Pomeroy JW, Wintrebert-Fouquet M, Butcher KSA, Lu H, Schaff WJ. A Raman spectroscopy study of InN Journal of Crystal Growth. 269: 59-65. DOI: 10.1016/J.Jcrysgro.2004.05.034  0.524
2004 Shrestha SK, Timmers H, Scott Butcher KSA, Wintrebert-Fouquet M. Accurate stoichiometric analysis of polycrystalline indium nitride films with elastic recoil detection Current Applied Physics. 4: 237-240. DOI: 10.1016/J.Cap.2003.11.018  0.556
2003 Butcher KSA, Wintrebert-Fouquet M, Chen PPT, Timmers H, Shrestha SK. Detailed analysis of absorption data for indium nitride Materials Science in Semiconductor Processing. 6: 351-354. DOI: 10.1016/J.Mssp.2003.07.004  0.407
2003 Wintrebert-Fouquet M, Butcher KSA, Motlan. High sensitivity, high resolution X-ray photoelectron analysis of InN Physica Status Solidi C: Conferences. 2785-2789. DOI: 10.1002/Pssc.200303438  0.364
2002 Wintrebert-Fouquet M, Butcher KSA, Lam SKH. Comparisons of gallium nitride and indium nitride properties after CF4/Argon reactive ion etching Materials Research Society Symposium - Proceedings. 743: 267-272. DOI: 10.1557/Proc-743-L3.55  0.515
2002 Butcher KSA, Wintrebert-Fouquet M, Motlan, Shrestha SK, Timmers H, Prince KE, Tansley TL. A study of indium nitride films grown under conditions resulting in apparent band-gaps from 0.7 eV to 2.3 eV Materials Research Society Symposium - Proceedings. 743: 707-712. DOI: 10.1557/Proc-743-L11.23  0.509
2002 Scott K, Butcher A, Wintrebert-Fouquet M, Chen PPT, Tansley TL, Srikeaw S. High mobility nitrides Materials Research Society Symposium - Proceedings. 693: 341-346. DOI: 10.1557/Proc-693-I6.9.1  0.489
2002 Wintrebert-Fouquet M, Butcher KSA, Motlan. Optical and electrical properties of InN grown by radio-frequency sputtering Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2002: 83-86. DOI: 10.1109/COMMAD.2002.1237198  0.447
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