☰

Jason T. Ryan, Ph.D. - Publications

Affiliations: 
2010 Pennsylvania State University, State College, PA, United States 
Area:
atomic-scale chemical, physical, optical, mechanical and electronic properties of surfaces and supramolecular assemblies
Tree Info Similar researchers PubMed Report error

40 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Anders MA, Lenahan PM, Ryan JT. Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs Materials Science Forum. 1004: 573-580. DOI: 10.4028/Www.Scientific.Net/Msf.1004.573  0.521
2019 Shrestha PR, Abhyankar N, Anders MA, Cheung KP, Gougelet R, Ryan JT, Szalai VA, Campbell JP. Non-Resonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection. Analytical Chemistry. PMID 31380627 DOI: 10.1021/Acs.Analchem.9B01730  0.373
2019 McCrory DJ, Anders MA, Ryan JT, Shrestha PR, Cheung KP, Lenahan PM, Campbell JP. Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station. The Review of Scientific Instruments. 90: 014708. PMID 30709237 DOI: 10.1063/1.5053665  0.482
2018 Georgiou V, Veksler D, Campbell JP, Shrestha PR, Ryan JT, Ioannou DE, Cheung KP. Ferroelectricity in Polar Polymer-based FETs: A Hysteresis Analysis. Advanced Functional Materials. 28. PMID 31080381 DOI: 10.1002/Adfm.201705250  0.335
2018 McCrory DJ, Lenahan PM, Nminibapiel DM, Veksler D, Ryan JT, Campbell JP. Total Ionizing Dose Effects on TiN/Ti/HfO/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance. Ieee Transactions On Nuclear Science. 65. PMID 31080273 DOI: 10.1109/Tns.2018.2820907  0.432
2018 McCrory DJ, Anders MA, Ryan JT, Shrestha PR, Cheung KP, Lenahan PM, Campbell JP. Wafer-Level Electrically Detected Magnetic Resonance: Magnetic Resonance in a Probing Station. Ieee Transactions On Device and Materials Reliability : a Publication of the Ieee Electron Devices Society and the Ieee Reliability Society. 18. PMID 30983909 DOI: 10.1109/Tdmr.2018.2817341  0.488
2017 Nminibapiel DM, Veksler D, Shrestha PR, Kim J, Campbell JP, Ryan JT, Baumgart H, Cheung KP. Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling Ieee Electron Device Letters. 38: 326-329. DOI: 10.1109/Led.2017.2656818  0.303
2017 Bersuker G, Veksler D, Nminibapiel DM, Shrestha PR, Campbell JP, Ryan JT, Baumgart H, Mason MS, Cheung KP. Toward reliable RRAM performance: macro- and micro-analysis of operation processes Journal of Computational Electronics. 16: 1085-1094. DOI: 10.1007/S10825-017-1105-5  0.358
2016 Chbili Z, Matsuda A, Chbili J, Ryan JT, Campbell JP, Lahbabi M, Ioannou DE, Cheung KP. Modeling early breakdown failures of gate oxide in SiC power MOSFETs Ieee Transactions On Electron Devices. 63: 3605-3613. DOI: 10.1109/Ted.2016.2586483  0.346
2016 Bittel B, Novak S, Ramey S, Padiyar S, Ryan JT, Campbell JP, Cheung KP. Novel Charge Pumping method applied to tri-gate MOSFETs for reliability characterization Ieee International Integrated Reliability Workshop Final Report. 2016: 69-72. DOI: 10.1109/IIRW.2015.7437070  0.72
2015 Campbell JP, Ryan JT, Shrestha PR, Liu Z, Vaz C, Kim JH, Georgiou V, Cheung KP. Electron spin resonance scanning probe spectroscopy for ultrasensitive biochemical studies. Analytical Chemistry. 87: 4910-6. PMID 25867553 DOI: 10.1021/Acs.Analchem.5B00487  0.43
2015 Matsuda A, Ryan JT, Campbell JP, Cheung KP. Capture cross section: A variable duty cycle charge pumping study International Symposium On Vlsi Technology, Systems, and Applications, Proceedings. 2015. DOI: 10.1109/VLSI-TSA.2015.7117555  0.308
2015 Ryan JT, Zou J, Southwick R, Campbell JP, Cheung KP, Oates AS, Huang R. Frequency-Modulated Charge Pumping With Extremely High Gate Leakage Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2395956  0.405
2014 Lu J, Jiao G, Vaz C, Campbell JP, Ryan JT, Cheung KP, Bersuker G, Young C. PBTI-induced random timing jitter in circuit-speed random logic Ieee Transactions On Electron Devices. 61: 3613-3618. DOI: 10.1109/Ted.2014.2357675  0.334
2014 Shrestha PR, Cheung KP, Campbell JP, Ryan JT, Baumgart H. Accurate Fast capacitance measurements for reliable device characterization Ieee Transactions On Electron Devices. 61: 2509-2514. DOI: 10.1109/Ted.2014.2325674  0.363
2013 Ryan JT, Southwick RG, Campbell JP, Cheung KP, Oates AS, Suehle JS. Frequency-Modulated Charge Pumping: Defect Measurements With High Gate Leakage Ieee Electron Device Letters. DOI: 10.1109/Led.2013.2251315  0.492
2013 Ryan JT, Campbell JP, Cheung KP, Suehle JS, Southwick RG, Oates AS. Reliability monitoring for highly leaky devices Ieee International Reliability Physics Symposium Proceedings. 2D.5.1-2D.5.4. DOI: 10.1109/IRPS.2013.6531960  0.348
2012 Ryan JT, Southwick RG, Campbell JP, Cheung KP, Suehle JS. On the contribution of bulk defects on charge pumping current Ieee Transactions On Electron Devices. 59: 2943-2949. DOI: 10.1109/Ted.2012.2211880  0.472
2012 Ryan JT, Southwick RG, Campbell JP, Cheung KP, Young CD, Suehle JS. Spectroscopic charge pumping in the presence of high densities of bulk dielectric traps Ieee International Reliability Physics Symposium Proceedings. XT.1.1-XT.1.4. DOI: 10.1109/IRPS.2012.6241931  0.344
2012 Ryan JT, Southwick RG, Campbell JP, Cheung KP, Suehle JS. Frequency dependent charge pumping - A defect depth profiling tool? Ieee International Integrated Reliability Workshop Final Report. 147-150. DOI: 10.1109/IIRW.2012.6468942  0.332
2011 Lenahan PM, Cochrane CJ, Campbell JP, Ryan JT. Electrically detected magnetic resonance in dielectric semiconductor systems of current interest Ecs Transactions. 35: 605-627. DOI: 10.1149/1.3572308  0.696
2011 Bittel BC, Lenahan PM, Ryan JT, Fronheiser J, Lelis AJ. Spin dependent charge pumping: A new tool for MOS interface characterization 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135250  0.754
2011 Bittel BC, Lenahan PM, Ryan JT, Fronheiser J, Lelis AJ. Spin dependent charge pumping: A new tool for reliability studies Ieee International Integrated Reliability Workshop Final Report. 142-145. DOI: 10.1109/IIRW.2011.6142610  0.739
2011 Ryan JT, Southwick RG, Campbell JP, Cheung KP, Young CD, Suehle JS. Experimentally based methodology for charge pumping bulk defect trapping correction Ieee International Integrated Reliability Workshop Final Report. 23-26. DOI: 10.1109/IIRW.2011.6142580  0.329
2011 Ryan JT, Southwick RG, Campbell JP, Cheung KP, Young CD, Suehle JS. On the "u-shaped" continuum of band edge states at the Si/SiO2 interface Applied Physics Letters. 99. DOI: 10.1063/1.3664772  0.332
2011 Bittel BC, Lenahan PM, Ryan JT, Fronheiser J, Lelis AJ. Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors Applied Physics Letters. 99. DOI: 10.1063/1.3630024  0.743
2011 Ryan JT, Yu LC, Han JH, Kopanski JJ, Cheung KP, Zhang F, Wang C, Campbell JP, Suehle JS. Spectroscopic charge pumping investigation of the amphoteric nature of Si/ SiO2 interface states Applied Physics Letters. 98. DOI: 10.1063/1.3597298  0.516
2010 Bersuker G, Park CS, Wen HC, Choi K, Price J, Lysaght P, Tseng HH, Sharia O, Demkov A, Ryan JT, Lenahan P. Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks Ieee Transactions On Electron Devices. 57: 2047-2056. DOI: 10.1109/Ted.2010.2051863  0.352
2010 Ryan JT, Lenahan PM, Krishnan AT, Krishnan S. Energy resolved spin dependent trap assisted tunneling investigation of silc related defects Ieee International Reliability Physics Symposium Proceedings. 1122-1125. DOI: 10.1109/IRPS.2010.5488660  0.368
2010 Ryan JT, Lenahan PM, Krishnan AT, Krishnan S. Spin dependent tunneling spectroscopy in 1.2 nm dielectrics Journal of Applied Physics. 108. DOI: 10.1063/1.3482071  0.513
2010 Ryan JT, Lenahan PM, Grasser T, Enichlmair H. Observations of negative bias temperature instability defect generation via on the fly electron spin resonance Applied Physics Letters. 96. DOI: 10.1063/1.3428783  0.428
2009 Lenahan PM, Ryan JT, Cochrane CJ, Conley JF. Defects in HfO2 based dielectric gate stacks Materials Research Society Symposium Proceedings. 1155: 3-13. DOI: 10.1557/Proc-1155-C12-01  0.682
2009 Ryan JT, Lenahan PM, Krishnan AT, Krishnan S. Investigation of SILC via energy resolved spin dependent tunneling spectroscopy Ieee International Integrated Reliability Workshop Final Report. 1-4. DOI: 10.1109/IRWS.2009.5383043  0.404
2009 Ryan JT, Lenahan PM, Krishnan AT, Krishnan S. Energy resolved spin dependent tunneling in 1.2 nm dielectrics Applied Physics Letters. 95. DOI: 10.1063/1.3226633  0.494
2008 Ryan JT, Lenahan PM. Interfacial layer defects and instabilities in HFO2 MOS structures Ieee International Reliability Physics Symposium Proceedings. 665-666. DOI: 10.1109/RELPHY.2008.4558978  0.325
2008 Ryan JT, Lenahan PM, Robertson J, Bersuker G. Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2902295  0.48
2007 Ryan JT, Lenahan PM. Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based MOSFETs Ieee International Integrated Reliability Workshop Final Report. 107-110. DOI: 10.1109/IRWS.2007.4469232  0.353
2007 Ryan JT, Lenahan PM, Bersuker G, Lysaght P. Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures Applied Physics Letters. 90. DOI: 10.1063/1.2734478  0.445
2006 Bersuker G, Park CS, Barnett J, Lysaght PS, Kirsch PD, Young CD, Choi R, Lee BH, Foran B, Van Benthem K, Pennycook SJ, Lenahan PM, Ryan JT. The effect of interfacial layer properties on the performance of Hf-based gate stack devices Journal of Applied Physics. 100. DOI: 10.1063/1.2362905  0.331
2005 Ryan JT, Lenahan PM, Kang AY, Conley JF, Bersuker G, Lysaght P. Identification of the atomic scale defects involved in radiation damage in HfO 2 based MOS devices Ieee Transactions On Nuclear Science. 52: 2272-2275. DOI: 10.1109/Tns.2005.860665  0.401
Show low-probability matches.