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Xuanyao Fong, Ph.D. - Publications

Affiliations: 
2014 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Computer Engineering
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50 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Kumar A, Lin DJX, Das D, Huang L, Yap SLK, Tan HR, Tan HK, Lim RJJ, Toh YT, Chen S, Lim ST, Fong X, Ho P. Multistate Compound Magnetic Tunnel Junction Synapses for Digital Recognition. Acs Applied Materials & Interfaces. PMID 38376994 DOI: 10.1021/acsami.3c17195  0.437
2021 Feng X, Li S, Wong SL, Tong S, Chen L, Zhang P, Wang L, Fong X, Chi D, Ang KW. Self-Selective Multi-Terminal Memtransistor Crossbar Array for In-Memory Computing. Acs Nano. PMID 33443417 DOI: 10.1021/acsnano.0c09441  0.345
2020 Deng J, Miriyala VPK, Zhu Z, Fong X, Liang G. Voltage-Controlled Spintronic Stochastic Neuron for Restricted Boltzmann Machine With Weight Sparsity Ieee Electron Device Letters. 41: 1102-1105. DOI: 10.1109/Led.2020.2995874  0.345
2020 Samanta S, Chand U, Xu S, Han K, Wu Y, Wang C, Kumar A, Velluri H, Li Y, Fong X, Thean AV, Gong X. Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity Ieee Electron Device Letters. 41: 856-859. DOI: 10.1109/Led.2020.2985787  0.373
2020 Zhu Z, Cai K, Deng J, Miriyala VPK, Yang H, Fong X, Liang G. Electrical Generation and Detection of Terahertz Signal Based on Spin-Wave Emission From Ferrimagnets Physical Review Applied. 13. DOI: 10.1103/Physrevapplied.13.034040  0.456
2019 Miriyala VPK, Fong X, Liang G. Influence of Size and Shape on the Performance of VCMA-Based MTJs Ieee Transactions On Electron Devices. 66: 944-949. DOI: 10.1109/Ted.2018.2889112  0.389
2019 Zhu Z, Deng J, Fong X, Liang G. Voltage-input spintronic oscillator based on competing effect for extended oscillation regions Journal of Applied Physics. 125: 183902. DOI: 10.1063/1.5092881  0.432
2019 Miriyala VPK, Zhu Z, Liang G, Fong X. Spin-wave mediated interactions for majority computation using Skyrmions and spin-torque nano-oscillators Journal of Magnetism and Magnetic Materials. 486: 165271. DOI: 10.1016/J.Jmmm.2019.165271  0.459
2018 Xiang L, Wang Y, Zhang P, Fong X, Wei X, Hu Y. Configurable multifunctional integrated circuits based on carbon nanotube dual-material gate devices. Nanoscale. PMID 30457631 DOI: 10.1039/C8Nr08259F  0.402
2018 Zhu Z, Fong X, Liang G. Theoretical proposal for determining angular momentum compensation in ferrimagnets Physical Review B. 97. DOI: 10.1103/Physrevb.97.184410  0.417
2018 Zhu Z, Fong X, Liang G. Damping-like spin-orbit-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch equation Journal of Applied Physics. 124: 193901. DOI: 10.1063/1.5048040  0.473
2018 Deng J, Fong X, Liang G. Electric-field-induced three-terminal pMTJ switching in the absence of an external magnetic field Applied Physics Letters. 112: 252405. DOI: 10.1063/1.5027759  0.427
2017 Pajouhi Z, Fong X, Raghunathan A, Roy K. Yield, Area, and Energy Optimization in STT-MRAMs Using Failure-Aware ECC Acm Journal On Emerging Technologies in Computing Systems. 13: 1-20. DOI: 10.1145/2934685  0.655
2017 Seo Y, Fong X, Roy K. Fast and Disturb-Free Nonvolatile Flip-Flop Using Complementary Polarizer MTJ Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 25: 1573-1577. DOI: 10.1109/Tvlsi.2016.2631981  0.591
2016 Reza AK, Fong X, Azim ZA, Roy K. Modeling and Evaluation of Topological Insulator/ Ferromagnet Heterostructure-Based Memory Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2520941  0.595
2016 Fong X, Kim Y, Yogendra K, Fan D, Sengupta A, Raghunathan A, Roy K. Spin-Transfer Torque Devices for Logic and Memory: Prospects and Perspectives Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 35: 1-22. DOI: 10.1109/Tcad.2015.2481793  0.691
2016 Fong X, Kim Y, Venkatesan R, Choday SH, Raghunathan A, Roy K. Spin-Transfer Torque Memories: Devices, Circuits, and Systems Proceedings of the Ieee. DOI: 10.1109/JPROC.2016.2521712  0.839
2016 Seo Y, Kwon KW, Fong X, Roy K. High Performance and Energy-Efficient On-Chip Cache Using Dual Port (1R/1W) Spin-Orbit Torque MRAM Ieee Journal On Emerging and Selected Topics in Circuits and Systems. DOI: 10.1109/Jetcas.2016.2547701  0.699
2016 Jaiswal A, Fong X, Roy K. Comprehensive Scaling Analysis of Current Induced Switching in Magnetic Memories Based on In-Plane and Perpendicular Anisotropies Ieee Journal On Emerging and Selected Topics in Circuits and Systems. DOI: 10.1109/Jetcas.2016.2547698  0.689
2016 Narasimman G, Roy S, Fong X, Roy K, Chang CH, Basu A. A low-voltage, low power STDP synapse implementation using domain-wall magnets for spiking neural networks Proceedings - Ieee International Symposium On Circuits and Systems. 2016: 914-917. DOI: 10.1109/ISCAS.2016.7527390  0.503
2015 Ranjan A, Venkataramani S, Fong X, Roy K, Raghunathan A. Approximate storage for energy efficient spintronic memories Proceedings - Design Automation Conference. 2015. DOI: 10.1145/2744769.2744799  0.481
2015 Fong X, Venkatesan R, Lee D, Raghunathan A, Roy K. Embedding Read-Only Memory in Spin-Transfer Torque MRAM-Based On-Chip Caches Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. DOI: 10.1109/Tvlsi.2015.2439733  0.767
2015 Kwon KW, Fong X, Wijesinghe P, Panda P, Roy K. High-Density and Robust STT-MRAM Array Through Device/Circuit/Architecture Interactions Ieee Transactions On Nanotechnology. 14: 1024-1034. DOI: 10.1109/Tnano.2015.2456510  0.663
2015 Zhang L, Fong X, Chang CH, Kong ZH, Roy K. Highly reliable spin-transfer torque magnetic ram-based physical unclonable function with multi-response-bits per cell Ieee Transactions On Information Forensics and Security. 10: 1630-1642. DOI: 10.1109/Tifs.2015.2421481  0.646
2015 Seo Y, Fong X, Roy K. Domain wall coupling-based STT-MRAM for on-chip cache applications Ieee Transactions On Electron Devices. 62: 554-560. DOI: 10.1109/Ted.2014.2377751  0.676
2015 Kim Y, Fong X, Kwon KW, Chen MC, Roy K. Multilevel spin-orbit torque MRAMs Ieee Transactions On Electron Devices. 62: 561-568. DOI: 10.1109/Ted.2014.2377721  0.732
2015 Zhang L, Fong X, Chang CH, Kong ZH, Roy K. Optimizating Emerging Nonvolatile Memories for Dual-Mode Applications: Data Storage and Key Generator Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 34: 1176-1187. DOI: 10.1109/Tcad.2015.2427251  0.636
2015 Kim Y, Fong X, Roy K. Spin-Orbit-Torque-Based Spin-Dice: A True Random-Number Generator Ieee Magnetics Letters. 6: 1-4. DOI: 10.1109/Lmag.2015.2496548  0.628
2015 Seo Y, Fong X, Kwon K, Roy K. Spin-Hall Magnetic Random-Access Memory With Dual Read/Write Ports for On-Chip Caches Ieee Magnetics Letters. 6: 1-4. DOI: 10.1109/Lmag.2015.2422260  0.69
2015 Roy K, Fan D, Fong X, Kim Y, Sharad M, Paul S, Chatterjee S, Bhunia S, Mukhopadhyay S. Exploring Spin Transfer Torque Devices for Unconventional Computing Ieee Journal On Emerging and Selected Topics in Circuits and Systems. DOI: 10.1109/Jetcas.2015.2405171  0.781
2015 Sengupta A, Al Azim Z, Fong X, Roy K. Spin-orbit torque induced spike-timing dependent plasticity Applied Physics Letters. 106. DOI: 10.1063/1.4914111  0.58
2015 Fong X, Choday SH, Roy K. Design and optimization of spin-transfer torque MRAMs More Than Moore Technologies For Next Generation Computer Design. 49-72. DOI: 10.1007/978-1-4939-2163-8_3  0.848
2014 Fong X, Kim Y, Choday SH, Roy K. Failure mitigation techniques for 1T-1MTJ spin-transfer torque MRAM bit-cells Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 22: 384-395. DOI: 10.1109/Tvlsi.2013.2239671  0.817
2014 Fong X, Venkatesan R, Raghunathan A, Roy K. Non-Volatile Complementary Polarizer Spin-Transfer Torque On-Chip Caches: A Device/Circuit/Systems Perspective Ieee Transactions On Magnetics. 50. DOI: 10.1109/Tmag.2014.2326858  0.703
2014 Azim ZA, Fong X, Ostler T, Chantrell R, Roy K. Laser Induced Magnetization Reversal for Detection in Optical Interconnects Ieee Electron Device Letters. 35: 1317-1319. DOI: 10.1109/Led.2014.2364232  0.529
2014 Kwon KW, Choday SH, Kim Y, Fong X, Park SP, Roy K. SHE-NVFF: Spin hall effect-based nonvolatile flip-flop for power gating architecture Ieee Electron Device Letters. 35: 488-490. DOI: 10.1109/Led.2014.2304683  0.832
2013 Mojumder NN, Fong X, Augustine C, Gupta SK, Choday SH, Roy K. Dual pillar spin-transfer torque MRAMs for low power applications Acm Journal On Emerging Technologies in Computing Systems. 9. DOI: 10.1145/2463585.2463590  0.805
2013 Sharad M, Venkatesan R, Fong X, Raghunathan A, Roy K. Reading spin-torque memory with spin-torque sensors Proceedings of the 2013 Ieee/Acm International Symposium On Nanoscale Architectures, Nanoarch 2013. 40-41. DOI: 10.1109/NanoArch.2013.6623040  0.636
2013 Lee D, Fong X, Roy K. R-MRAM: A ROM-Embedded STT MRAM Cache Ieee Electron Device Letters. 34: 1256-1258. DOI: 10.1109/Led.2013.2279137  0.724
2013 Fong X, Roy K. Correction to "Complimentary polarizers STT-MRAM (CPSTT) for on-chip caches" [Feb 13 232-234] Ieee Electron Device Letters. 34: 562-562. DOI: 10.1109/Led.2013.2249611  0.497
2013 Fong X, Roy K. Complimentary Polarizers STT-MRAM (CPSTT) for On-Chip Caches Ieee Electron Device Letters. 34: 232-234. DOI: 10.1109/Led.2012.2234079  0.71
2013 Sharad M, Venkatesan R, Fong X, Raghunathan A, Roy K. Energy-efficient MRAM access scheme using hybrid circuits based on spin-torque sensors Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688182  0.662
2012 Fong X, Choday SH, Roy K. Bit-cell level optimization for non-volatile memories using magnetic tunnel junctions and spin-transfer torque switching Ieee Transactions On Nanotechnology. 11: 172-181. DOI: 10.1109/Tnano.2011.2169456  0.836
2012 Augustine C, Mojumder N, Fong X, Choday H, Park SP, Roy K. STT-MRAMs for future universal memories: Perspective and prospective 2012 28th International Conference On Microelectronics - Proceedings, Miel 2012. 349-355. DOI: 10.1109/MIEL.2012.6222872  0.854
2012 Augustine C, Mojumder NN, Fong X, Choday SH, Park SP, Roy K. Spin-transfer torque MRAMs for low power memories: Perspective and prospective Ieee Sensors Journal. 12: 756-766. DOI: 10.1109/Jsen.2011.2124453  0.815
2012 Panagopoulos G, Augustine C, Fong X, Roy K. Exploring variability and reliability of multi-level STT-MRAM cells Device Research Conference - Conference Digest, Drc. 139-140. DOI: 10.1109/DRC.2012.6257003  0.715
2011 Augustine C, Fong X, Behin-Aein B, Roy K. Ultra-low power nanomagnet-based computing: A system-level perspective Ieee Transactions On Nanotechnology. 10: 778-788. DOI: 10.1109/Tnano.2010.2079941  0.742
2011 Fong X, Gupta SK, Mojumder NN, Choday SH, Augustine C, Roy K. KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 51-54. DOI: 10.1109/SISPAD.2011.6035047  0.76
2010 Augustine C, Fong X, Roy K. Dual ferroelectric capacitor architecture and its application to TAG RAM 2010 Ieee International Conference On Integrated Circuit Design and Technology, Icicdt 2010. 24-28. DOI: 10.1109/ICICDT.2010.5510750  0.761
2009 Augustine C, Behin-Aein B, Fong X, Roy K. A design methodology and device/circuit/architecture compatible simulation framework for low-power magnetic quantum cellular automata systems Proceedings of the Asia and South Pacific Design Automation Conference, Asp-Dac. 847-852. DOI: 10.1109/ASPDAC.2009.4796586  0.722
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