| Year |
Citation |
Score |
| 2016 |
Marko IP, Broderick CA, Jin S, Ludewig P, Stolz W, Volz K, Rorison JM, O'Reilly EP, Sweeney SJ. Optical gain in GaAsBi/GaAs quantum well diode lasers. Scientific Reports. 6: 28863. PMID 27363930 DOI: 10.1038/srep28863 |
0.326 |
|
| 2014 |
Adams AR, Marko IP, Mukherjee J, Sweeney SJ, Gocalinska A, Pelucchi E, Corbett B. Semiconductor quantum well lasers with a temperature insensitive threshold current Conference Digest - Ieee International Semiconductor Laser Conference. 82-83. DOI: 10.1109/ISLC.2014.174 |
0.332 |
|
| 2013 |
Aldukhayel A, Jin SR, Marko IP, Zhang SY, Revin DG, Cockburn JW, Sweeney SJ. Investigations of carrier scattering into L-valley in λ=3.5μm InGaAs/AlAs(Sb) quantum cascade lasers using high hydrostatic pressure Physica Status Solidi (B) Basic Research. 250: 693-697. DOI: 10.1002/pssb.201200848 |
0.305 |
|
| 2012 |
Hossain N, Jin SR, Liebich S, Zimprich M, Volz K, Kunert B, Stolz W, Sweeney SJ. Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers Applied Physics Letters. 101. DOI: 10.1063/1.4733312 |
0.306 |
|
| 2011 |
Hild K, Marko IP, Johnson SR, Yu SQ, Zhang YH, Sweeney SJ. Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 m GaAsSb/GaAs vertical cavity surface emitting lasers Applied Physics Letters. 99. DOI: 10.1063/1.3625938 |
0.305 |
|
| 2010 |
Hossain N, Jin SR, Sweeney SJ, Yu SQ, Johnson SR, Ding D, Zhang YH. Improved performance of GaAsSb/GaAs SQW lasers Proceedings of Spie - the International Society For Optical Engineering. 7616. DOI: 10.1117/12.842253 |
0.301 |
|
| 2010 |
Hossain N, Jin SR, Sweeney SJ, Liebich S, Reinhard S, Volz K, Kunert B, Stolz W. Physical properties of Ga(NAsP)/GaP QW lasers grown by MOVPE 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 65-66. DOI: 10.1109/PHOTONICS.2010.5698759 |
0.301 |
|
| 2010 |
Hossain N, Chamings J, Jin SR, Sweeney SJ, Liebich S, Reinhard S, Volz K, Kunert B, Stolz W. Recombination and loss mechanisms in GaNAsP/GaP QW lasers 2010 Photonics Global Conference, Pgc 2010. DOI: 10.1109/PGC.2010.5706060 |
0.32 |
|
| 2009 |
Adams AR, Marko IP, Sweeney SJ, Teissier R, Baranov AN, Tomić S. The effect of hydrostatic pressure on the operation of quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 7222. DOI: 10.1117/12.814322 |
0.331 |
|
| 2009 |
Massé NF, Marko IP, Adams AR, Sweeney SJ. Temperature insensitive quantum dot lasers: Are we really there yet? Journal of Materials Science: Materials in Electronics. 20. DOI: 10.1007/s10854-008-9574-8 |
0.317 |
|
| 2009 |
Marko IP, Adams AR, Sweeney SJ, Teissier R, Baranov AN, Tomić S. Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure Physica Status Solidi (B) Basic Research. 246: 512-515. DOI: 10.1002/pssb.200880501 |
0.328 |
|
| 2008 |
Sweeney SJ, Ahmed EH, Qi P, Kirova T, Lyyra AM, Huennekens J. Measurement of absolute transition dipole moment functions of the 3 (1)Pi --> 1(X) (1)Sigma+ and 3 (1)Pi --> 2(A) (1)Sigma+ transitions in NaK using Autler-Townes spectroscopy and calibrated fluorescence. The Journal of Chemical Physics. 129: 154303. PMID 19045189 DOI: 10.1063/1.2982780 |
0.377 |
|
| 2008 |
Marko IP, Adams AR, Sweeney SJ, Teissier R, Baranov AN, Tomić S. Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure Conference Digest - Ieee International Semiconductor Laser Conference. 47-48. DOI: 10.1109/ISLC.2008.4636002 |
0.316 |
|
| 2008 |
Chamings J, Adams AR, Sweeney SJ, Kunert B, Volz K, Stolz W. Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers Applied Physics Letters. 93. DOI: 10.1063/1.2975845 |
0.329 |
|
| 2006 |
Masś NF, Sweeney SJ, Marko IP, Adams AR, Hatori N, Sugawara M. Temperature dependence of the gain in p -doped and intrinsic 1.3 μm InAsGaAs quantum dot lasers Applied Physics Letters. 89. DOI: 10.1063/1.2387114 |
0.301 |
|
| 2006 |
O'Brien K, Sweeney SJ, Adams AR, Murdin BN, Salhi A, Rouillard Y, Joullié A. Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 μm Applied Physics Letters. 89. DOI: 10.1063/1.2243973 |
0.315 |
|
| 2005 |
Hild K, Sweeney SJ, Lock DA, Wright S, Wang JB, Johnson SR, Zhang YH. On the thermal stability of 1.3μm GaAsSb/GaAs-based lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 331-332. DOI: 10.1109/LEOS.2005.1548013 |
0.317 |
|
| 2005 |
Marko IP, Adams AR, Sweeney SJ, Mowbray DJ, Skolnick MS, Liu HY, Groom KM. Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1041-1047. DOI: 10.1109/JSTQE.2005.853847 |
0.318 |
|
| 2005 |
Sweeney SJ, Lock DA, Adams AR. Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence Aip Conference Proceedings. 772: 1545-1546. DOI: 10.1063/1.1994705 |
0.308 |
|
| 2005 |
Marko IP, Andreev AD, Sweeney SJ, Adams AR, Krebs R, Deubert S, Reithmaier JP, Forchel A. The influence of auger processes on recombination in long-wavelength InAs/GaAs quantum dots Aip Conference Proceedings. 772: 681-682. DOI: 10.1063/1.1994289 |
0.306 |
|
| 2005 |
Blume G, Hosea TJC, Sweeney SJ, Johnson SR, Wang JB, Zhang YH. Spectroscopic investigations of GaAsSb/GaAs based structures for 1.3 μm VCSEL applications Iee Proceedings: Optoelectronics. 152: 110-117. DOI: 10.1049/ip-opt:20055024 |
0.313 |
|
| 2005 |
Cripps SA, Hosea TJC, Sweeney SJ, Lock D, Leinonen T, Lyytikäinen J, Dumitrescu M. High temperature operation of 760 nm vertical-cavity surface-emitting lasers investigated using photomodulated reflectance wafer measurements and temperature-dependent device studies Iee Proceedings: Optoelectronics. 152: 103-109. DOI: 10.1049/ip-opt:20045022 |
0.345 |
|
| 2004 |
Sweeney SJ. Novel experimental techniques for semiconductor laser characterisation and optimisation Physica Scripta T. 152-158. DOI: 10.1088/0031-8949/2004/T114/038 |
0.343 |
|
| 2004 |
Sweeney SJ, McConville D, Massé NF, Bouyssou RX, Adams AR, Ahmad CN, Hanke C. Temperature and pressure dependence of recombination processes in 1.5 μm InGaAlAs/InP-based quantum well lasers Physica Status Solidi (B) Basic Research. 241: 3391-3398. DOI: 10.1002/pssb.200405242 |
0.321 |
|
| 2003 |
Fehse R, Adams AR, Sweeney SJ, Tomic S, Riechert H, Ramakrishnan A. Carrier recombination processes in MOVPE and MBE grown 1.3 μ m GaInNAs edge emitting lasers Solid-State Electronics. 47: 501-506. DOI: 10.1016/S0038-1101(02)00403-3 |
0.313 |
|
| 2003 |
Knowles G, Tomić S, Jin S, Fehse R, Sweeney SJ, Sale TE, Adams AR. Gain-cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques Physica Status Solidi (B) Basic Research. 235: 480-485. DOI: 10.1002/pssb.200301606 |
0.316 |
|
| 2003 |
Sweeney SJ, Thijs PJA. Origin of the high temperature performance degradation of 1.5μm InGaAs(P)/InP quantum well lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 977-978. |
0.3 |
|
| 2002 |
Fehse R, Tomić S, Adams AR, Sweeney SJ, O'Reilly EP, Andreev A, Riechert H. A quantitative study of radiative, auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers Ieee Journal On Selected Topics in Quantum Electronics. 8: 801-810. DOI: 10.1109/JSTQE.2002.801684 |
0.312 |
|
| 2001 |
Knowles G, Sweeney SJ, Sale T. Influence of leakage and gain-cavity alignment on the performance of Al(GaInP) visible vertical-cavity surface emitting lasers Iee Proceedings: Optoelectronics. 148: 55-59. DOI: 10.1049/ip-opt:20010192 |
0.313 |
|
| 2001 |
Knowles G, Sweeney SJ, Sale TE, Adams AR. Assessing the performance of visible (665 nm) vertical cavity surface emitting lasers using high pressure and low temperature techniques Physica Status Solidi (B) Basic Research. 223: 581-585. DOI: 10.1002/1521-3951(200101)223:2<581::AID-PSSB581>3.0.CO;2-M |
0.308 |
|
| 2001 |
Sweeney SJ, Higashi T, Andreev A, Adams AR, Uchida T, Fujii T. Superior temperature performance of 1.3 μm AlGaInAs-based semiconductor lasers investigated at high pressure and low temperature Physica Status Solidi (B) Basic Research. 223: 573-579. DOI: 10.1002/1521-3951(200101)223:2<573::AID-PSSB573>3.0.CO;2-I |
0.306 |
|
| 2001 |
Sweeney SJ, Knowles G, Sale TE, Adams AR. Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures Physica Status Solidi (B) Basic Research. 223: 567-572. DOI: 10.1002/1521-3951(200101)223:2<567::AID-PSSB567>3.0.CO;2-6 |
0.304 |
|
| 1999 |
Higashi T, Sweeney SJ, Phillips AF, Adams AR, O'Reilly EP, Uchida T, Fujii T. Experimental analysis of temperature dependence in 1.3-μm AlGaInAs-InP strained MQW lasers Ieee Journal On Selected Topics in Quantum Electronics. 5: 413-419. DOI: 10.1109/2944.788399 |
0.322 |
|
| 1999 |
Phillips AF, Sweeney SJ, Adams AR, Thijs PJA. Temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers Ieee Journal On Selected Topics in Quantum Electronics. 5: 401-412. DOI: 10.1109/2944.788398 |
0.309 |
|
| 1999 |
Phillips AF, Sweeney SJ, Adams AR, Thijs PJA. The hydrostatic pressure dependence of the threshold current in 1.3 μm InGaAsP quantum well semiconductor diode lasers Physica Status Solidi (B) Basic Research. 211: 513-518. |
0.334 |
|
| 1998 |
Sweeney SJ, Phillips AF, Adams AR, O'Reilly EP, Silver M, Thijs PJA. Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers Conference On Lasers and Electro-Optics Europe - Technical Digest. 304. |
0.342 |
|
| 1998 |
Higashi T, Sweeney SJ, Phillips AF, Adams AR, O'Reilly EP, Uchida T, Fujii T. Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers Conference Digest - Ieee International Semiconductor Laser Conference. 61-62. |
0.319 |
|
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