Year |
Citation |
Score |
2020 |
Tabassum N, Nikas V, Kaloyeros AE, Kaushik V, Crawford E, Huang M, Gallis S. Engineered telecom emission and controlled positioning of Er3+ enabled by SiC nanophotonic structures Nanophotonics. 9: 1425-1437. DOI: 10.1515/Nanoph-2019-0535 |
0.657 |
|
2019 |
Vipin D, Modi N, Reynolds T, Zhang B, Tabassum N, Bhowmik G, Nikas V, Chakraborty S, Gallis S, Huang M. Effects of forming gas annealing on luminescence properties of erbium silicate thin films Aip Advances. 9: 065018. DOI: 10.1063/1.5095953 |
0.532 |
|
2018 |
Tabassum N, Kotha M, Kaushik V, Ford B, Dey S, Crawford E, Nikas V, Gallis S. On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays. Nanomaterials (Basel, Switzerland). 8. PMID 30400611 DOI: 10.3390/Nano8110906 |
0.504 |
|
2017 |
Ford B, Tabassum N, Nikas V, Gallis S. Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering. Materials (Basel, Switzerland). 10. PMID 28772802 DOI: 10.3390/Ma10040446 |
0.627 |
|
2016 |
Tabassum N, Nikas V, Ford B, Huang M, Kaloyeros AE, Gallis S. Time-resolved analysis of the white photoluminescence from chemically synthesized SiCxOy thin films and nanowires Applied Physics Letters. 109. DOI: 10.1063/1.4959834 |
0.682 |
|
2015 |
Nikas V, Tabassum N, Ford B, Smith L, Kaloyeros AE, Gallis S. Strong visible light emission from silicon-oxycarbide nanowire arrays prepared by electron beam lithography and reactive ion etching Journal of Materials Research. 1-8. DOI: 10.1557/Jmr.2015.346 |
0.68 |
|
2014 |
Nikas V, Gallis S, Huang M, Kaloyeros AE, Nguyen APD, Stesmans A, Afanas'Ev VV. The origin of white luminescence from silicon oxycarbide thin films Applied Physics Letters. 104. DOI: 10.1063/1.4865100 |
0.73 |
|
2011 |
Nikas V, Gallis S, Suhag H, Huang M, Kaloyeros AE. Intense blue-white luminescence from amorphous silicon oxycarbide (a-SiCxOy) thin films Proceedings of Spie - the International Society For Optical Engineering. 8123. DOI: 10.1117/12.891342 |
0.718 |
|
2011 |
Nikas V, Gallis S, Huang M, Kaloyeros AE. Thermal annealing effects on photoluminescence properties of carbon-doped silicon-rich oxide thin films implanted with erbium Journal of Applied Physics. 109. DOI: 10.1063/1.3582090 |
0.717 |
|
2010 |
Gallis S, Nikas V, Suhag H, Huang M, Kaloyeros AE. White light emission from amorphous silicon oxycarbide (a-SiCx Oy) thin films: Role of composition and postdeposition annealing Applied Physics Letters. 97. DOI: 10.1063/1.3482938 |
0.748 |
|
2009 |
Gallis S, Nikas V, Eisenbraun E, Huang M, Kaloyeros AE. On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide Journal of Materials Research. 24: 2561-2573. DOI: 10.1557/Jmr.2009.0308 |
0.765 |
|
2009 |
Nikas V, Gallis S, Huang M, Kaloyeros AE. Influence of carbon content on photoluminescence properties of erbium-doped silicon oxycarbide thin films Materials Research Society Symposium Proceedings. 1111: 129-134. |
0.722 |
|
2008 |
Gallis S, Nikas V, Suhag H, Huang M, Kaloyeros AE. A comparative study of a-SiCxOyHz thin films grown via chemical vapor deposition for silicon photonics Proceedings of Spie - the International Society For Optical Engineering. 7039. DOI: 10.1117/12.795579 |
0.749 |
|
2008 |
Gallis S, Nikas V, Suhag H, Huang M, Kaloyeros AE. Strong photoluminescence at 1540 nm from Er-doped amorphous silicon oxycarbide: A novel silicon material for photonic applications Proceedings of Spie - the International Society For Optical Engineering. 7030. DOI: 10.1117/12.795560 |
0.747 |
|
2007 |
Gallis S, Nikas V, Huang M, Eisenbraun E, Kaloyeros AE. Comparative study of the effects of thermal treatment on the optical properties of hydrogenated amorphous silicon-oxycarbide Journal of Applied Physics. 102. DOI: 10.1063/1.2753572 |
0.752 |
|
2005 |
Gallis S, Huang M, Nikas V, Efstathiadis H, Eisenbraun E, Kaloyeros AE, Nyein EE, Hommerich U. Erbium-doped Amorphous- Si-C-O Matrix (a-SiCxOy:Er) - A Novel Silicon-based Material for Near-infrared Optoelectronic Applications Mrs Proceedings. 866. DOI: 10.1557/PROC-866-V6.5 |
0.719 |
|
2005 |
Gallis S, Huang M, Nikas V, Efstathiadis H, Eisenbraun E, Kaloyeros AE, Nyein EE, Hommerich U. Erbium-doped amorphous- Si-C-O matrix (a-SiC xO y:Er) - A novel silicon-based material for near-infrared optoelectronic applications Materials Research Society Symposium Proceedings. 866: 183-188. |
0.743 |
|
Show low-probability matches. |