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John C. Mann, Ph.D. - Publications

Affiliations: 
2013 Materials Science and Engineering University of California, Riverside, Riverside, CA, United States 
Area:
Materials Science Engineering
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9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Michailow W, Schülein FJR, Möller B, Preciado E, Nguyen AE, Son Gv, Mann J, Hörner AL, Wixforth A, Bartels L, Krenner HJ. Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor Applied Physics Letters. 110: 23505. DOI: 10.1063/1.4973862  0.512
2015 Preciado E, Schülein FJ, Nguyen AE, Barroso D, Isarraraz M, von Son G, Lu IH, Michailow W, Möller B, Klee V, Mann J, Wixforth A, Bartels L, Krenner HJ. Scalable fabrication of a hybrid field-effect and acousto-electric device by direct growth of monolayer MoS2/LiNbO3. Nature Communications. 6: 8593. PMID 26493867 DOI: 10.1038/Ncomms9593  0.551
2015 Klee V, Preciado E, Barroso D, Nguyen AE, Lee C, Erickson KJ, Triplett M, Davis B, Lu IH, Bobek S, McKinley J, Martinez JP, Mann J, Talin AA, Bartels L, et al. Superlinear composition-dependent photocurrent in CVD-grown monolayer MoS2(1-x)Se2x alloy devices. Nano Letters. 15: 2612-9. PMID 25723259 DOI: 10.1021/Acs.Nanolett.5B00190  0.543
2014 Ma Q, Isarraraz M, Wang CS, Preciado E, Klee V, Bobek S, Yamaguchi K, Li E, Odenthal PM, Nguyen A, Barroso D, Sun D, von Son Palacio G, Gomez M, Nguyen A, ... ... Mann J, et al. Postgrowth tuning of the bandgap of single-layer molybdenum disulfide films by sulfur/selenium exchange. Acs Nano. 8: 4672-7. PMID 24684434 DOI: 10.1021/Nn5004327  0.669
2014 Mann J, Ma Q, Odenthal PM, Isarraraz M, Le D, Preciado E, Barroso D, Yamaguchi K, von Son Palacio G, Nguyen A, Tran T, Wurch M, Nguyen A, Klee V, Bobek S, et al. 2-dimensional transition metal dichalcogenides with tunable direct band gaps: MoS₂(₁-x) Se₂x monolayers. Advanced Materials (Deerfield Beach, Fla.). 26: 1399-404. PMID 24339159 DOI: 10.1002/Adma.201304389  0.704
2014 Plechinger G, Mann J, Preciado E, Barroso D, Nguyen A, Eroms J, Schüller C, Bartels L, Korn T. A direct comparison of CVD-grown and exfoliated MoS2 using optical spectroscopy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/6/064008  0.623
2013 Ma Q, Odenthal PM, Mann J, Le D, Wang CS, Zhu Y, Chen T, Sun D, Yamaguchi K, Tran T, Wurch M, McKinley JL, Wyrick J, Magnone K, Heinz TF, et al. Controlled argon beam-induced desulfurization of monolayer molybdenum disulfide. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 25: 252201. PMID 23708055 DOI: 10.1088/0953-8984/25/25/252201  0.661
2013 Mann J, Sun D, Ma Q, Chen JR, Preciado E, Ohta T, Diaconescu B, Yamaguchi K, Tran T, Wurch M, Magnone K, Heinz TF, Kellogg GL, Kawakami R, Bartels L. Facile growth of monolayer MoS2 film areas on SiO2 European Physical Journal B. 86. DOI: 10.1140/Epjb/E2013-31011-Y  0.726
2012 Sun D, Lu W, Le D, Ma Q, Aminpour M, Alcántara Ortigoza M, Bobek S, Mann J, Wyrick J, Rahman TS, Bartels L. An MoS(x) structure with high affinity for adsorbate interaction. Angewandte Chemie (International Ed. in English). 51: 10284-8. PMID 22969065 DOI: 10.1002/Anie.201205258  0.627
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