| Year |
Citation |
Score |
| 2020 |
Lee J, Honsberg CB. Numerical Analysis of the Detailed Balance of Multiple Exciton Generation Solar Cells with Nonradiative Recombination Applied Sciences. 10: 5558. DOI: 10.3390/App10165558 |
0.369 |
|
| 2020 |
Murali S, Zhang C, Goryll M, King RR, Honsberg CB. Study of pit formation in MBE grown GaP on misoriented Si Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 32201. DOI: 10.1116/6.0000064 |
0.362 |
|
| 2020 |
Chikhalkar A, Gangopadhyay A, Liu H, Zhang C, Ponce FA, Smith DJ, Honsberg C, King RR. Investigation of polycrystalline GaxIn1 − xP for potential use as a solar cell absorber with tunable bandgap Journal of Applied Physics. 127: 73102. DOI: 10.1063/1.5125676 |
0.434 |
|
| 2019 |
Vadiee E, Fischer AM, Clinton EA, McFavilen H, Patadia A, Arena C, Ponce FA, King RR, Honsberg CB, Doolittle WA. Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis Japanese Journal of Applied Physics. 58: 101003. DOI: 10.7567/1347-4065/Ab3B66 |
0.354 |
|
| 2019 |
Kim M, Lee SJ, Jo HJ, Kim G, Kim YH, Lee SJ, Honsberg CB, Kim JS. Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy Applied Science and Convergence Technology. 28: 9-12. DOI: 10.5757/Asct.2019.28.1.9 |
0.375 |
|
| 2019 |
Zhang C, Ding L, Boccard M, Narland TU, Faleev N, Bowden S, Bertoni M, Honsberg C, Holman Z. Silicon Nitride Barrier Layers Mitigate Minority-Carrier Lifetime Degradation in Silicon Wafers During Simulated MBE Growth of III–V Layers Ieee Journal of Photovoltaics. 9: 431-436. DOI: 10.1109/Jphotov.2019.2892522 |
0.431 |
|
| 2019 |
Vadiee E, Clinton EA, Carpenter JV, McFavilen H, Arena C, Holman ZC, Honsberg CB, Doolittle WA. The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance Journal of Applied Physics. 126: 83110. DOI: 10.1063/1.5112498 |
0.422 |
|
| 2019 |
Zhang Z, Ghosh K, Faleev NN, Wang H, Honsberg CB, Reece P, Bremner SP. Sb dissociative surface coverage model for incorporation of antimony in GaAsSb layers grown on GaAs (0 0 1) substrates Journal of Crystal Growth. 526: 125231. DOI: 10.1016/J.Jcrysgro.2019.125231 |
0.35 |
|
| 2019 |
Meidanshahi RV, Zhang C, Zou Y, Honsberg C, Goodnick SM. Electronic structure of GaP/Si(001) heterojunctions and the role of hydrogen passivation Progress in Photovoltaics. 27: 724-732. DOI: 10.1002/Pip.3151 |
0.307 |
|
| 2018 |
Zhang C, Vadiee E, Dahal S, King RR, Honsberg CB. Developing High Performance GaP/Si Heterojunction Solar Cells. Journal of Visualized Experiments : Jove. PMID 30507906 DOI: 10.3791/58292 |
0.462 |
|
| 2018 |
Vadiee E, Clinton EA, McFavilen H, Weidenbach AS, Engel Z, Matthews C, Zhang C, Arena C, King RR, Honsberg CB, Doolittle WA. InGaN solar cells with regrown GaN homojunction tunnel contacts Applied Physics Express. 11: 82304. DOI: 10.7567/Apex.11.082304 |
0.438 |
|
| 2018 |
Kim M, Jo HJ, Kim Y, Lee SH, Lee SJ, Honsberg CB, Kim JS. Excitation Intensity- and Temperature-Dependent Photoluminescence Study of InAs/GaAs Sub-monolayer-Quantum Dot Applied Science and Convergence Technology. 27: 109-112. DOI: 10.5757/Asct.2018.27.5.109 |
0.363 |
|
| 2018 |
Zhang C, Vadiee E, King RR, Honsberg CB. Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy Journal of Materials Research. 33: 414-423. DOI: 10.1557/Jmr.2018.14 |
0.45 |
|
| 2018 |
Saive R, Emmer H, Chen CT, Zhang C, Honsberg C, Atwater H. Study of the Interface in a GaP/Si Heterojunction Solar Cell Ieee Journal of Photovoltaics. 8: 1568-1576. DOI: 10.1109/Jphotov.2018.2861724 |
0.434 |
|
| 2018 |
Mansoori A, Addamane SJ, Renteria EJ, Shima DM, Behzadirad M, Vadiee E, Honsberg C, Balakrishnan G. Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers Solar Energy Materials and Solar Cells. 185: 21-27. DOI: 10.1016/J.Solmat.2018.05.008 |
0.412 |
|
| 2018 |
Zhang C, Boley A, Faleev N, Smith DJ, Honsberg CB. Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures Journal of Crystal Growth. 503: 36-44. DOI: 10.1016/J.Jcrysgro.2018.09.020 |
0.417 |
|
| 2018 |
Vadiee E, Fang Y, Zhang C, Fischer AM, Williams JJ, Renteria EJ, Balakrishnan G, Honsberg CB. Temperature dependence of GaSb and AlGaSb solar cells Current Applied Physics. 18: 752-761. DOI: 10.1016/J.Cap.2018.03.007 |
0.37 |
|
| 2017 |
Williams JJ, Goodnick SM, McFavilen H, Fischer AM, Ding D, Young S, Vadiee E, Ponce FA, Arena C, Honsberg CB. Refractory In$_{x}$ Ga1−$_{x}$ N Solar Cells for High-Temperature Applications Ieee Journal of Photovoltaics. 7: 1646-1652. DOI: 10.1109/Jphotov.2017.2756057 |
0.431 |
|
| 2017 |
Vadiee E, Renteria E, Zhang C, Williams JJ, Mansoori A, Addamane S, Balakrishnan G, Honsberg CB. AlGaSb-Based Solar Cells Grown on GaAs: Structural Investigation and Device Performance Ieee Journal of Photovoltaics. 7: 1795-1801. DOI: 10.1109/Jphotov.2017.2756056 |
0.442 |
|
| 2017 |
Kim Y, Cho I, Ryu M, Kim JO, Lee SJ, Ban K, Honsberg CB. Stranski–Krastanov InAs/GaAsSb quantum dots coupled with sub-monolayer quantum dot stacks as a promising absorber for intermediate band solar cells Applied Physics Letters. 111: 073103. DOI: 10.1063/1.4999437 |
0.413 |
|
| 2017 |
Augusto A, Herasimenka SY, King RR, Bowden SG, Honsberg C. Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset Journal of Applied Physics. 121: 205704. DOI: 10.1063/1.4984071 |
0.355 |
|
| 2017 |
Jeffries AM, Ding L, Williams JJ, Williamson TL, Hoffbauer MA, Honsberg C, Bertoni M. Gallium nitride grown by molecular beam epitaxy at low temperatures Thin Solid Films. 642: 25-30. DOI: 10.1016/J.Tsf.2017.07.066 |
0.355 |
|
| 2017 |
Zhang C, Kim Y, Faleev NN, Honsberg CB. Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy Journal of Crystal Growth. 475: 83-87. DOI: 10.1016/J.Jcrysgro.2017.05.030 |
0.414 |
|
| 2016 |
Maros A, Faleev N, King RR, Honsberg CB, Convey D, Xie H, Ponce FA. Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4942897 |
0.349 |
|
| 2016 |
Maros A, Faleev N, King RR, Honsberg CB. Growth and characterization of GaAs1-x-ySbxNy/GaAs heterostructures for multijunction solar cell applications Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4941424 |
0.434 |
|
| 2016 |
Fabien CAM, Maros A, Honsberg CB, Doolittle WA. III-Nitride Double-Heterojunction Solar Cells with High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices Ieee Journal of Photovoltaics. 6: 460-464. DOI: 10.1109/Jphotov.2015.2504790 |
0.45 |
|
| 2016 |
Ban K, Kim Y, Kuciauskas D, Bremner SP, Honsberg CB. Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels Semiconductor Science and Technology. 31: 125010. DOI: 10.1088/0268-1242/31/12/125010 |
0.408 |
|
| 2016 |
Kim Y, Faleev NN, Ban K, Kim JO, Lee SJ, Honsberg CB. Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well Journal of Physics D: Applied Physics. 49: 305102. DOI: 10.1088/0022-3727/49/30/305102 |
0.423 |
|
| 2016 |
Maros A, Faleev NN, Bertoni MI, Honsberg CB, King RR. Carrier localization effects in GaAs1−xSbx/GaAs heterostructures Journal of Applied Physics. 120: 183104. DOI: 10.1063/1.4967755 |
0.385 |
|
| 2016 |
Kim Y, Ban KY, Zhang C, Kim JO, Lee SJ, Honsberg CB. Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer Applied Physics Letters. 108. DOI: 10.1063/1.4943182 |
0.437 |
|
| 2016 |
Boley A, Kim Y, Ban K-, Honsberg CB, Smith DJ. TEM Characterization of InAs Quantum Dots with GaAsSb Spacer Layers Microscopy and Microanalysis. 22: 1656-1657. DOI: 10.1017/S1431927616009120 |
0.373 |
|
| 2016 |
Ding L, Zhang C, Nærland TU, Faleev N, Honsberg C, Bertoni MI. Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth Energy Procedia. 92: 617-623. DOI: 10.1016/J.Egypro.2016.07.027 |
0.388 |
|
| 2015 |
Choi JY, Alford TL, Honsberg CB. Fabrication of periodic silicon nanopillars in a two-dimensional hexagonal array with enhanced control on structural dimension and period. Langmuir : the Acs Journal of Surfaces and Colloids. 31: 4018-23. PMID 25781034 DOI: 10.1021/Acs.Langmuir.5B00128 |
0.331 |
|
| 2015 |
Vulic N, Choi JY, Honsberg CB, Goodnick SM. Silica nanosphere lithography defined light trapping structures for ultra-thin si photovoltaics Materials Research Society Symposium Proceedings. 1770: 31-36. DOI: 10.1557/Opl.2015.548 |
0.358 |
|
| 2015 |
Fedoseyev A, Raman A, Thomas D, Bowden S, Choi JY, Honsberg C, Monga T. Numerical modeling of radiation effects in Si solar cell for space Proceedings of Spie - the International Society For Optical Engineering. 9358. DOI: 10.1117/12.2081064 |
0.405 |
|
| 2015 |
Zhang C, Kim Y, Ebert C, Faleev NN, Honsberg CB. Influence of high growth rate on GaAs-based solar cells grown by metalorganic chemical vapor deposition 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356064 |
0.349 |
|
| 2015 |
Kim Y, Faleev NN, Honsberg CB. Effect of InGaAsSb capping layer on the structural properties of InAs/InGaAsSb quantum dots 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355809 |
0.308 |
|
| 2015 |
Kim Y, Ban KY, Kuciauskas D, Dippo PC, Honsberg CB. Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/3/035006 |
0.393 |
|
| 2015 |
Kim Y, Ban KY, Boley A, Smith DJ, Honsberg CB. Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots Applied Physics Letters. 107. DOI: 10.1063/1.4934695 |
0.429 |
|
| 2015 |
Kim Y, Ban KY, Zhang C, Honsberg CB. Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells Applied Physics Letters. 107. DOI: 10.1063/1.4933272 |
0.482 |
|
| 2015 |
Tang D, Kim Y, Faleev N, Honsberg CB, Smith DJ. Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs1-xSbx/GaAs composite substrates Journal of Applied Physics. 118. DOI: 10.1063/1.4929639 |
0.454 |
|
| 2015 |
Kim Y, Ban KY, Honsberg CB. Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells Applied Physics Letters. 106. DOI: 10.1063/1.4922274 |
0.45 |
|
| 2015 |
Williams JJ, Fischer AM, Williamson TL, Gangam S, Faleev NN, Hoffbauer MA, Honsberg CB. High growth speed of gallium nitride using ENABLE-MBE Journal of Crystal Growth. 425: 129-132. DOI: 10.1016/J.Jcrysgro.2015.04.007 |
0.387 |
|
| 2015 |
Karow MM, Faleev NN, Smith DJ, Honsberg CB. Defect creation in InGaAs/GaAs multiple quantum wells-I. Structural properties Journal of Crystal Growth. 425: 43-48. DOI: 10.1016/J.Jcrysgro.2015.03.051 |
0.409 |
|
| 2015 |
Karow MM, Faleev NN, Maros A, Honsberg CB. Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties Journal of Crystal Growth. 425: 49-53. DOI: 10.1016/J.Jcrysgro.2015.03.048 |
0.418 |
|
| 2014 |
Zou Y, Honsberg CB, Freundlich A, Goodnick SM. Simulation of electron escape from GaNAs/GaAs quantum well solar cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2908-2911. DOI: 10.1109/PVSC.2014.6925540 |
0.311 |
|
| 2014 |
Lee J, Honsberg CB. Limiting efficiencies of integrating single junction with intermediate band solar cells for multiphysics effects 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1068-1072. DOI: 10.1109/PVSC.2014.6925098 |
0.302 |
|
| 2014 |
Williams JJ, Jeffries AM, Ding L, Gangam S, Ghosh K, Williamson TL, Bertoni MI, Honsberg CB. Structural and optical investigations of GaN-Si interface for a heterojunction solar cell 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 841-843. DOI: 10.1109/PVSC.2014.6925046 |
0.351 |
|
| 2014 |
Lee J, Honsberg CB. Limiting efficiencies of multijunction solar cells with multiple exciton generation Ieee Journal of Photovoltaics. 4: 874-880. DOI: 10.1109/Jphotov.2014.2307156 |
0.437 |
|
| 2014 |
Kim Y, Ban KY, Kuciauskas D, Dippo PC, Honsberg CB. Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots Journal of Crystal Growth. 406: 68-71. DOI: 10.1016/J.Jcrysgro.2014.08.009 |
0.394 |
|
| 2014 |
Williams JJ, Williamson TL, Hoffbauer MA, Wei Y, Faleev NN, Honsberg C. Growth of high crystal quality InN by ENABLE-MBE Physica Status Solidi (C). 11: 577-580. DOI: 10.1002/Pssc.201300693 |
0.403 |
|
| 2013 |
Bowden S, Ghosh K, Honsberg C. Solar cells without p-n junctions Spie Newsroom. DOI: 10.1117/2.1201307.004681 |
0.316 |
|
| 2013 |
Lubyshev D, Fastenau JM, Qiu Y, Liu AWK, Koerperick EJ, Olesberg JT, Norton D, Faleev NN, Honsberg CB. MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates Proceedings of Spie. 8704: 870412. DOI: 10.1117/12.2019039 |
0.4 |
|
| 2013 |
Bowden S, Ghosh K, Honsberg C. Non PN junction solar cells using carrier selective contacts Proceedings of Spie - the International Society For Optical Engineering. 8620. DOI: 10.1117/12.2004259 |
0.433 |
|
| 2013 |
Williams JJ, Williamson TL, Hoffbauer MA, Fischer AM, Goodnick SM, Faleev NN, Ghosh K, Honsberg CB. Inducing a junction in n-type InxGa(1-x)N Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4797489 |
0.414 |
|
| 2013 |
Lee J, Goodnick SM, Honsberg CB. Limiting efficiency of silicon based nanostructure solar cells for multiple exciton generation Conference Record of the Ieee Photovoltaic Specialists Conference. 1046-1049. DOI: 10.1109/PVSC.2013.6744320 |
0.366 |
|
| 2013 |
Lee J, Honsberg CB. The impact of quantum yield through limiting efficiency for multiple exciton generation with intermediate band solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1041-1045. DOI: 10.1109/PVSC.2013.6744319 |
0.362 |
|
| 2013 |
Bremner SP, Ban KY, Faleev NN, Honsberg CB, Smith DJ. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001) Journal of Applied Physics. 114. DOI: 10.1063/1.4819962 |
0.423 |
|
| 2013 |
Faleev NN, Honsberg C, Punegov VI. Quantitative analysis of the quantum dot superlattice by high-resolution x-ray diffraction Journal of Applied Physics. 113: 163506. DOI: 10.1063/1.4802662 |
0.383 |
|
| 2013 |
Faleev N, Sustersic N, Bhargava N, Kolodzey J, Kazimirov AY, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I - High-resolution x-ray diffraction and x-ray topography Journal of Crystal Growth. 365: 44-53. DOI: 10.1016/J.Jcrysgro.2012.12.002 |
0.351 |
|
| 2013 |
Faleev N, Sustersic N, Bhargava N, Kolodzey J, Magonov S, Smith DJ, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II - Transmission electron microscopy and atomic force microscopy Journal of Crystal Growth. 365: 35-43. DOI: 10.1016/J.Jcrysgro.2012.11.067 |
0.378 |
|
| 2012 |
Goodnick SM, Honsberg C. Modeling carrier relaxation in hot carrier solar cells Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.910858 |
0.427 |
|
| 2012 |
Ban KY, Bremner SP, Kuciauskas D, Dahal SN, Honsberg CB. The role of Sb compositions on the properties of InAs/GaAsSb quantum dots (QDs) Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.910834 |
0.403 |
|
| 2012 |
Lee J, Honsberg CB. The thermodynamic limits of tandem photovoltaic devices with intermediate band Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.910813 |
0.419 |
|
| 2012 |
Lee J, Honsberg CB. Limiting efficiencies over 50% using multijunction solar cells with multiple exciton generation Conference Record of the Ieee Photovoltaic Specialists Conference. 62-67. DOI: 10.1109/PVSC.2012.6317569 |
0.324 |
|
| 2012 |
Ban KY, Kuciauskas D, Bremner SP, Honsberg CB. Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence Journal of Applied Physics. 111. DOI: 10.1063/1.4717766 |
0.381 |
|
| 2012 |
Jampana BR, Weiland CR, Opila RL, Ferguson IT, Honsberg CB. Optical absorption dependence on composition and thickness of In xGa 1 - XN (0.05 < × < 0.22) grown on GaN/sapphire Thin Solid Films. 520: 6807-6812. DOI: 10.1016/J.Tsf.2012.07.003 |
0.416 |
|
| 2012 |
Wang X, Waite N, Murcia P, Emery K, Steiner M, Kiamilev F, Goossen K, Honsberg C, Barnett A. Lateral spectrum splitting concentrator photovoltaics: Direct measurement of component and submodule efficiency Progress in Photovoltaics: Research and Applications. 20: 149-165. DOI: 10.1002/Pip.1194 |
0.357 |
|
| 2011 |
Ban KY, Bremner SP, Kuciauskas D, Dahal SN, Honsberg CB. Detection of the third transition of InAs/GaAsSb quantum dots Conference Record of the Ieee Photovoltaic Specialists Conference. 003503-003506. DOI: 10.1109/PVSC.2011.6186704 |
0.321 |
|
| 2011 |
Ban KY, Hong WK, Bremner SP, Dahal SN, McFelea H, Honsberg CB. Controllability of the subband occupation of InAs quantum dots on a delta-doped GaAsSb barrier Journal of Applied Physics. 109. DOI: 10.1063/1.3527039 |
0.392 |
|
| 2011 |
Chhabra B, Weiland C, Opila RL, Honsberg CB. Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy Physica Status Solidi (a) Applications and Materials Science. 208: 86-90. DOI: 10.1002/Pssa.201026101 |
0.324 |
|
| 2010 |
Ban KY, Dahal SN, Honsberg CB, Nataraj L, Bremner SP, Cloutier SG. Room temperature capacitance-voltage profile and photoluminescence for delta doped InGaAs single quantum well Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C3I6-C3I9. DOI: 10.1116/1.3268614 |
0.423 |
|
| 2010 |
Chhabra B, Opila RL, Honsberg CB. 12.4% efficient freestanding 30μm ultra-thin silicon solar cell using a-Si/c-Si heterostructure Conference Record of the Ieee Photovoltaic Specialists Conference. 1325-1329. DOI: 10.1109/PVSC.2010.5614352 |
0.331 |
|
| 2010 |
Jampana BR, Melton AG, Jamil M, Faleev NN, Opila RL, Ferguson IT, Honsberg CB. Design and realization of wide-band-Gap (∼ 2.67 eV) InGaN p-n junction solar cell Ieee Electron Device Letters. 31: 32-34. DOI: 10.1109/Led.2009.2034280 |
0.446 |
|
| 2010 |
Ban KY, Bremner SP, Liu G, Dahal SN, Dippo PC, Norman AG, Honsberg CB. Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots Applied Physics Letters. 96. DOI: 10.1063/1.3409691 |
0.388 |
|
| 2010 |
Chhabra B, Bowden S, Opila RL, Honsberg CB. High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation Applied Physics Letters. 96. DOI: 10.1063/1.3309595 |
0.371 |
|
| 2010 |
Bremner SP, Ghosh K, Nataraj L, Cloutier SG, Honsberg CB. Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces Thin Solid Films. 519: 64-68. DOI: 10.1016/J.Tsf.2010.07.060 |
0.396 |
|
| 2010 |
Pancholi A, Bremner SP, Boyle J, Stoleru VG, Honsberg CB. Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system Solar Energy Materials and Solar Cells. 94: 1025-1030. DOI: 10.1016/J.Solmat.2010.02.002 |
0.449 |
|
| 2010 |
Dahal SN, Bremner SP, Honsberg CB. Identification of candidate material systems for quantum dot solar cells including the effect of strain Progress in Photovoltaics: Research and Applications. 18: 233-239. DOI: 10.1002/Pip.937 |
0.448 |
|
| 2009 |
Jampana BR, Faleev NN, Ferguson IT, Opila RL, Honsberg CB. Crystalline perfection of epitaxial structure: Correlation with composition, thickness, and elastic strain of epitaxial layers Materials Research Society Symposium Proceedings. 1167: 71-76. DOI: 10.1557/Proc-1167-O07-04 |
0.431 |
|
| 2009 |
Jampana BR, Ferguson IT, Opila RL, Honsberg CB. Utilizing polarization induced band bending for InGaN solar cell design Materials Research Society Symposium Proceedings. 1167: 3-8. DOI: 10.1557/Proc-1167-O01-04 |
0.446 |
|
| 2009 |
Ban KY, Dahal SN, Honsberg CB. Optical properties of delta doped InAs/GaAs0.88Sb0.12 structure for novel concept solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 001264-001267. DOI: 10.1109/PVSC.2009.5411245 |
0.34 |
|
| 2009 |
Levy MY, Honsberg C. Absorption coefficients of intermediate-band media Journal of Applied Physics. 106: 73103. DOI: 10.1063/1.3213337 |
0.341 |
|
| 2009 |
Faleev N, Jampana B, Jani O, Yu H, Opila R, Ferguson I, Honsberg C. Correlation of crystalline defects with photoluminescence of InGaN layers Applied Physics Letters. 95: 51915. DOI: 10.1063/1.3202409 |
0.42 |
|
| 2009 |
Barnett A, Kirkpatrick D, Honsberg C, Moore D, Wanlass M, Emery K, Schwartz R, Carlson D, Bowden S, Aiken D, Gray A, Kurtz S, Kazmerski L, Steiner M, Gray J, et al. Very high efficiency solar cell modules Progress in Photovoltaics: Research and Applications. 17: 75-83. DOI: 10.1002/Pip.852 |
0.333 |
|
| 2008 |
Mutitu JG, Shi S, Chen C, Creazzo T, Barnett A, Honsberg C, Prather DW. Thin film solar cell design based on photonic crystal and diffractive grating structures. Optics Express. 16: 15238-48. PMID 18795062 DOI: 10.1364/Oe.16.015238 |
0.387 |
|
| 2008 |
Bremner SP, Liu GM, Faleev N, Ghosh K, Honsberg CB. Growth and characterization of Ga As1-x Sbx barrier layers for advanced concept solar cells Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1149-1152. DOI: 10.1116/1.2835062 |
0.472 |
|
| 2008 |
Levy MY, Honsberg C. Nanostructured Absorbers for Multiple Transition Solar Cells Ieee Transactions On Electron Devices. 55: 706-711. DOI: 10.1109/Ted.2007.914829 |
0.492 |
|
| 2008 |
Ban KY, Liu GM, Bremner SP, Opila R, Honsberg CB. MBE growth and characterization of InAs quantum dots on strained GaAs 1-xSbx buffer layer for application in high efficiency solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922779 |
0.348 |
|
| 2008 |
Jacobs S, Levy M, Marchena E, Honsberg CB. Silicon multiple exciton generation/pn junction hybrid solar cell Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922718 |
0.321 |
|
| 2008 |
Ghosh K, Bremner SP, Honsberg CB. Material selection for three level transition using Quantum well structure Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922710 |
0.351 |
|
| 2008 |
Dahal SN, Bremner SP, Honsberg CB. Band structure calculation for quantum dot solar cells using k.p method Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922605 |
0.363 |
|
| 2008 |
Bremner SP, Pancholi A, Ghosh K, Dahal S, Liu GM, Ban KY, Levy MY, Honsberg CB. Growth of InAs quantum dots on GaAsSb for the realization of a quantum dot solar cell Conference Record of the Ieee Photovoltaic Specialists Conference. DOI: 10.1109/PVSC.2008.4922601 |
0.347 |
|
| 2008 |
Levy MY, Honsberg C. Solar cell with an intermediate band of finite width Physical Review B. 78: 165122. DOI: 10.1103/Physrevb.78.165122 |
0.354 |
|
| 2008 |
Levy MY, Honsberg C. Intraband absorption in solar cells with an intermediate band Journal of Applied Physics. 104: 113103. DOI: 10.1063/1.3021449 |
0.372 |
|
| 2008 |
Bremner SP, Levy MY, Honsberg CB. Limiting efficiency of an intermediate band solar cell under a terrestrial spectrum Applied Physics Letters. 92. DOI: 10.1063/1.2907493 |
0.399 |
|
| 2008 |
Trybus E, Jani O, Burnham S, Ferguson I, Honsberg C, Steiner M, Doolittle WA. Characteristics of InGaN designed for photovoltaic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1843-1845. DOI: 10.1002/Pssc.200778693 |
0.456 |
|
| 2008 |
Bremner SP, Levy MY, Honsberg CB. Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method Progress in Photovoltaics: Research and Applications. 16: 225-233. DOI: 10.1002/Pip.799 |
0.4 |
|
| 2007 |
Jani O, Ferguson I, Honsberg C, Kurtz S. Design and characterization of GaN∕InGaN solar cells Applied Physics Letters. 91: 132117. DOI: 10.1063/1.2793180 |
0.435 |
|
| 2007 |
Faleev N, Honsberg C, Jani O, Ferguson I. Crystalline perfection of GaN and AlN epitaxial layers and the main features of structural transformation of crystalline defects Journal of Crystal Growth. 300: 246-250. DOI: 10.1016/J.Jcrysgro.2006.11.016 |
0.388 |
|
| 2006 |
Barnett A, Kirkpatrick D, Honsberg C. Very high efficiency solar cells Proceedings of Spie. 6338. DOI: 10.1117/12.684418 |
0.374 |
|
| 2004 |
Richards BS, Rowlands SF, Ueranatasun A, Cotter JE, Honsberg CB. Potential cost reduction of buried-contact solar cells through the use of titanium dioxide thin films Solar Energy. 76: 269-276. DOI: 10.1016/S0038-092X(03)00246-9 |
0.333 |
|
| 2002 |
Richards BS, Cotter JE, Honsberg CB. Enhancing the surface passivation of TiO2 coated silicon wafers Applied Physics Letters. 80: 1123-1125. DOI: 10.1063/1.1445810 |
0.31 |
|
| 2000 |
Vogl B, Slade AM, Honsberg CB, Cotter JE, Wenham SR. Inclusion of dielectric films for surface passivation of buried contact solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2000: 327-330. DOI: 10.1109/PVSC.2000.915829 |
0.311 |
|
| 1999 |
Honsberg CB, Cotter JE, Mclntosh KR, Pritchard SC, Richards BS, Wenham SR. Design strategies for commercial solar cells using the buried contact technology Ieee Transactions On Electron Devices. 46: 1984-1992. DOI: 10.1109/16.791986 |
0.304 |
|
| 1996 |
Ebong AU, Lee SH, Honsberg C, Wenham SR. High Efficiency Double Sided Buried Contact Silicon Solar Cells Japanese Journal of Applied Physics. 35: 2077-2080. DOI: 10.1143/Jjap.35.2077 |
0.424 |
|
| 1996 |
Honsberg CB, Edmiston S, Koschier L, Wenham SR, Sproul AB, Green MA. Capitalizing on two dimensional minority carrier injection in silicon solar cell design Solar Energy Materials and Solar Cells. 41: 183-193. DOI: 10.1016/0927-0248(95)00115-8 |
0.302 |
|
| 1996 |
Ebong AU, Taouk M, Honsberg CB, Wenham SR. The use of oxynitrides for the fabrication of buried contact silicon solar cells Solar Energy Materials and Solar Cells. 40: 183-195. DOI: 10.1016/0927-0248(95)00086-0 |
0.312 |
|
| 1994 |
Wenham SR, Green MA, Edmiston S, Campbell P, Koschier L, Honsberg CB, Sproul AB, Thorpe D, Shi Z, Heiser G. Limits to the efficiency of silicon multilayer thin film solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 2: 1234-1241. DOI: 10.1016/0927-0248(95)00116-6 |
0.343 |
|
| 1987 |
Honsberg C, Barnett AM. Light emission as a solar cell analysis technique Solar Cells. 20: 59-63. DOI: 10.1016/0379-6787(87)90021-4 |
0.353 |
|
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