| Year |
Citation |
Score |
| 2023 |
Saha S, Costa RC, Silva MC, Fonseca-Santos JM, Chen L, Phakatkar AH, Bhatia H, Faverani LP, Barão VAR, Shokuhfar T, Sukotjo C, Takoudis C. Collagen membrane functionalized with magnesium oxide via room-temperature atomic layer deposition promotes osteopromotive and antimicrobial properties. Bioactive Materials. 30: 46-61. PMID 37521273 DOI: 10.1016/j.bioactmat.2023.07.013 |
0.301 |
|
| 2022 |
Shahmohammadi M, Mukherjee R, Sukotjo C, Diwekar UM, Takoudis CG. Recent Advances in Theoretical Development of Thermal Atomic Layer Deposition: A Review. Nanomaterials (Basel, Switzerland). 12. PMID 35269316 DOI: 10.3390/nano12050831 |
0.306 |
|
| 2020 |
Hashemi Astaneh S, Faverani LP, Sukotjo C, Takoudis CG. Atomic layer deposition on dental materials: Processing conditions and surface functionalization to improve physical, chemical, and clinical properties - A review. Acta Biomaterialia. PMID 33227485 DOI: 10.1016/j.actbio.2020.11.024 |
0.342 |
|
| 2020 |
Bishal AK, Anderson N, Ho Hung SK, Jokisaari JR, Klie RF, Koh A, Abdussalam W, Sukotjo C, Takoudis CG. Highly Conductive Collagen by Low Temperature Atomic Layer Deposition of Platinum. Acs Applied Materials & Interfaces. PMID 32886478 DOI: 10.1021/Acsami.0C13712 |
0.441 |
|
| 2020 |
Hashemi Astaneh S, Sukotjo C, Takoudis CG, Feinerman A. Simple masking method for selective atomic layer deposition of thin films Journal of Vacuum Science & Technology B. 38: 025001. DOI: 10.1116/6.0000146 |
0.47 |
|
| 2020 |
Shahmohammadi M, Pensa E, Bhatia H, Yang B, Jursich G, Takoudis CG. Enhancing the surface properties and functionalization of polymethyl methacrylate with atomic layer-deposited titanium(IV) oxide Journal of Materials Science. 1-19. DOI: 10.1007/S10853-020-05274-2 |
0.485 |
|
| 2019 |
Lee IR, Takoudis CG. Process‐Property Relationships in Si1 − x Ge x Chemical Vapor Deposition: Thermodynamic and Kinetic Studies Journal of the Electrochemical Society. 143: 1719-1726. DOI: 10.1149/1.1836707 |
0.427 |
|
| 2019 |
Astaneh SH, Jursich G, Sukotjo C, Takoudis CG. Surface and subsurface film growth of titanium dioxide on polydimethylsiloxane by atomic layer deposition Applied Surface Science. 493: 779-786. DOI: 10.1016/J.Apsusc.2019.07.029 |
0.435 |
|
| 2018 |
Bishal AK, Sukotjo C, Jokisaari JR, Klie RF, Takoudis CG. Enhanced Bio-activity of Collagen Fiber Functionalized with Room Temperature Atomic Layer Deposited Titania. Acs Applied Materials & Interfaces. PMID 30212175 DOI: 10.1021/Acsami.8B05857 |
0.41 |
|
| 2018 |
Chang S, Vijayan S, Aindow M, Jursich G, Takoudis CG. Hydrogen annealing effects on local structures and oxidation states of atomic layer deposited SnOx Journal of Vacuum Science & Technology A. 36: 031519. DOI: 10.1116/1.5026696 |
0.47 |
|
| 2018 |
Chang S, Takoudis CG. Growth behavior and structural analysis of atomic layer deposited SnxTi1−xOy films Journal of Vacuum Science & Technology A. 36: 01A121. DOI: 10.1116/1.5004993 |
0.496 |
|
| 2018 |
Agarwal R, Sharma Y, Chang S, Pitike KC, Sohn C, Nakhmanson SM, Takoudis CG, Lee HN, Tonelli R, Gardner J, Scott JF, Katiyar RS, Hong S. Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate Physical Review B. 97. DOI: 10.1103/Physrevb.97.054109 |
0.454 |
|
| 2017 |
Bishal AK, Sukotjo C, Takoudis CG. Room temperature TiO2 atomic layer deposition on collagen membrane from a titanium alkylamide precursor Journal of Vacuum Science & Technology A. 35: 01B134. DOI: 10.1116/1.4972245 |
0.408 |
|
| 2017 |
Fu S, Rossero J, Chen C, Li D, Takoudis CG, Abiade JT. On the wetting behavior of ceria thin films grown by pulsed laser deposition Applied Physics Letters. 110: 081601. DOI: 10.1063/1.4973997 |
0.438 |
|
| 2017 |
Patel SB, Baker N, Marques I, Hamlekhan A, Mathew MT, Takoudis C, Friedrich C, Sukotjo C, Shokuhfar T. Transparent TiO2 nanotubes on zirconia for biomedical applications Rsc Advances. 7: 30397-30410. DOI: 10.1039/C7Ra03940A |
0.327 |
|
| 2017 |
Bishal AK, Grotberg J, Sukotjo C, Mathew MT, Takoudis CG. Human Osteoblast Cell-Ti6Al4V Metal Alloy Interactions Under Varying Cathodic Potentials: A Pilot Study Journal of Bio- and Tribo-Corrosion. 3. DOI: 10.1007/S40735-017-0101-4 |
0.311 |
|
| 2016 |
Marques Ida S, Alfaro MF, Saito MT, da Cruz NC, Takoudis C, Landers R, Mesquita MF, Nociti Junior FH, Mathew MT, Sukotjo C, Barão VA. Biomimetic coatings enhance tribocorrosion behavior and cell responses of commercially pure titanium surfaces. Biointerphases. 11: 031008. PMID 27514370 DOI: 10.1116/1.4960654 |
0.301 |
|
| 2016 |
Grotberg J, Hamlekhan A, Butt A, Patel S, Royhman D, Shokuhfar T, Sukotjo C, Takoudis C, Mathew MT. Thermally oxidized titania nanotubes enhance the corrosion resistance of Ti6Al4V. Materials Science & Engineering. C, Materials For Biological Applications. 59: 677-89. PMID 26652422 DOI: 10.1016/J.Msec.2015.10.056 |
0.318 |
|
| 2016 |
Chang S, Selvaraj SK, Choi YY, Hong S, Nakhmanson SM, Takoudis CG. Atomic layer deposition of environmentally benign SnTiOx as a potential ferroelectric material Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4935650 |
0.507 |
|
| 2015 |
Bishal AK, Butt A, Selvaraj SK, Joshi B, Patel SB, Huang S, Yang B, Shukohfar T, Sukotjo C, Takoudis CG. Atomic Layer Deposition in Bio-Nanotechnology: A Brief Overview. Critical Reviews in Biomedical Engineering. 43: 255-76. PMID 27480459 DOI: 10.1615/Critrevbiomedeng.2016016456 |
0.428 |
|
| 2015 |
Marques ID, Alfaro MF, Cruz NC, Mesquita MF, Takoudis C, Sukotjo C, Mathew MT, Barão VA. Tribocorrosion behavior of biofunctional titanium oxide films produced by micro-arc oxidation: Synergism and mechanisms. Journal of the Mechanical Behavior of Biomedical Materials. 60: 8-21. PMID 26773646 DOI: 10.1016/J.Jmbbm.2015.12.030 |
0.356 |
|
| 2015 |
Azimi N, Xue Z, Bloom I, Gordin ML, Wang D, Daniel T, Takoudis C, Zhang Z. Understanding the effect of a fluorinated ether on the performance of lithium-sulfur batteries. Acs Applied Materials & Interfaces. 7: 9169-77. PMID 25866861 DOI: 10.1021/Acsami.5B01412 |
0.762 |
|
| 2015 |
Saber M, Rossero J, Takoudis C. Electrochemical Impedance Spectroscopy and Characterization of 20% Yttria
doped Cerium on Silicon The Journal of Undergraduate Research At the University of Illinois At Chicago. 9. DOI: 10.5210/Jur.V9I1.7545 |
0.411 |
|
| 2015 |
Cui X, Zdunek AD, Jursich G, Takoudis CG. Nanostructured Ni-YSZ by atomic layer deposition Ecs Journal of Solid State Science and Technology. 4: P429-P435. DOI: 10.1149/2.0121512Jss |
0.419 |
|
| 2015 |
Selvaraj SK, Takoudis CG. Scalable control program for multiprecursor flow-type atomic layer deposition system Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4893774 |
0.338 |
|
| 2015 |
Azimi N, Xue Z, Hu L, Takoudis C, Zhang S, Zhang Z. Additive Effect on the Electrochemical Performance of Lithium–Sulfur Battery Electrochimica Acta. 154: 205-210. DOI: 10.1016/J.Electacta.2014.12.041 |
0.763 |
|
| 2014 |
Patel SB, Hamlekhan A, Royhman D, Butt A, Yuan J, Shokuhfar T, Sukotjo C, Mathew MT, Jursich G, Takoudis CG. Enhancing surface characteristics of Ti-6Al-4V for bio-implants using integrated anodization and thermal oxidation. Journal of Materials Chemistry. B. 2: 3597-3608. PMID 32263796 DOI: 10.1039/C3Tb21731K |
0.318 |
|
| 2014 |
Hamlekhan A, Butt A, Patel S, Royhman D, Takoudis C, Sukotjo C, Yuan J, Jursich G, Mathew MT, Hendrickson W, Virdi A, Shokuhfar T. Fabrication of anti-aging TiO2 nanotubes on biomedical Ti alloys. Plos One. 9: e96213. PMID 24788345 DOI: 10.1371/Journal.Pone.0096213 |
0.351 |
|
| 2014 |
Butt A, Hamlekhan A, Patel SB, Royhman D, Sukotjo C, Mathew MT, Shokuhfar T, Takoudis C. A Novel Investigation of the Formation of TiO₂ Nanotubes on Thermally Formed Oxide of Ti-6Al-4V. The Journal of Oral Implantology. PMID 24628292 DOI: 10.1563/Aaid-Joi-D-13-00340 |
0.355 |
|
| 2014 |
Patel S, Butt A, Tao Q, Rossero A JI, Royhman D, Sukotjo C, Takoudis CG. Novel functionalization of Ti-V alloy and Ti-II using atomic layer deposition for improved surface wettability. Colloids and Surfaces. B, Biointerfaces. 115: 280-5. PMID 24384144 DOI: 10.1016/J.Colsurfb.2013.11.038 |
0.36 |
|
| 2014 |
Sparks R, Jursich G, Zdunek A, Rossero J, Takoudis C. Tunability and Electrical Properties of Yttria-doped-ceria Films Fabricated via Atomic Layer Deposition The Journal of Undergraduate Research At the University of Illinois At Chicago. 7. DOI: 10.5210/Jur.V7I1.7529 |
0.487 |
|
| 2014 |
Peixoto C, Butt A, Takoudis C. Effect of Storage Conditions on Ti-6Al-4V Surface Wettability The Journal of Undergraduate Research At the University of Illinois At Chicago. 7. DOI: 10.5210/Jur.V7I1.7527 |
0.355 |
|
| 2014 |
Parulekar J, Selvaraj S, Takoudis C. Atomic layer deposition of zirconium oxide on copper patterned silicon substrate The Journal of Undergraduate Research At the University of Illinois At Chicago. 7. DOI: 10.5210/Jur.V7I1.7526 |
0.413 |
|
| 2014 |
Azimi N, Xue Z, Rago ND, Takoudis C, Gordin ML, Song J, Wang D, Zhang Z. Fluorinated Electrolytes for Li-S Battery: Suppressing the Self-Discharge with an Electrolyte Containing Fluoroether Solvent Journal of the Electrochemical Society. 162: A64-A68. DOI: 10.1149/2.0431501Jes |
0.76 |
|
| 2014 |
Yang Y, Tao Q, Srinivasan G, Takoudis CG. Cyclic chemical vapor deposition of nickel ferrite thin films using organometallic precursor combination Ecs Journal of Solid State Science and Technology. 3: P345-P352. DOI: 10.1149/2.0061411Jss |
0.5 |
|
| 2014 |
Kannan Selvaraj S, Feinerman A, Takoudis CG. Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4837915 |
0.539 |
|
| 2014 |
Kannan Selvaraj S, Parulekar J, Takoudis CG. Selective atomic layer deposition of zirconia on copper patterned silicon substrates using ethanol as oxygen source as well as copper reductant Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4826941 |
0.442 |
|
| 2013 |
Selvaraj SK, Jursich G, Takoudis CG. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor. The Review of Scientific Instruments. 84: 095109. PMID 24089868 DOI: 10.1063/1.4821081 |
0.468 |
|
| 2013 |
Essex RR, Rossero JI, Jurisch G, Takoudis C. Atomic Layer Deposition of Cerium Oxide for Potential Use in Solid Oxide Fuel Cells The Journal of Undergraduate Research At the University of Illinois At Chicago. 6. DOI: 10.5210/Jur.V6I1.7521 |
0.457 |
|
| 2013 |
Walter A, Xu R, Jursich G, Takoudis C. Tunability of Atomic Layer Deposition of Yttria-Stabilized Zirconium Oxide for use in Solid Oxide Fuel Cells The Journal of Undergraduate Research At the University of Illinois At Chicago. 6. DOI: 10.5210/Jur.V6I1.7519 |
0.626 |
|
| 2013 |
Hamilton M, Butt A, Patel S, Sukotjo C, Takoudis C. Characterization of Anatase Phase on Calcinated Titanium-V Alloy The Journal of Undergraduate Research At the University of Illinois At Chicago. 6. DOI: 10.5210/Jur.V6I1.7515 |
0.384 |
|
| 2013 |
Azimi N, Weng W, Takoudis C, Zhang Z. Improved performance of lithium–sulfur battery with fluorinated electrolyte Electrochemistry Communications. 37: 96-99. DOI: 10.1016/J.Elecom.2013.10.020 |
0.751 |
|
| 2012 |
James C, Xu R, Jursich G, Takoudis C. Atomic Layer Deposition of Zirconium Oxide for Fuel Cell Applications The Journal of Undergraduate Research At the University of Illinois At Chicago. 5. DOI: 10.5210/Jur.V5I1.7505 |
0.597 |
|
| 2012 |
Jablansky A, Rossero A. JI, Jursich G, Takoudis C. Selective Atomic Layer Deposition of TiO2 on Silicon/Copper-patterned Substrates The Journal of Undergraduate Research At the University of Illinois At Chicago. 5. DOI: 10.5210/Jur.V5I1.7500 |
0.433 |
|
| 2012 |
Xua R, Takoudis CG. Atomic layer deposition and characterization of amorphous Er xTi1-xOy Dielectric Ultra-Thin Films Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.013206Jss |
0.525 |
|
| 2012 |
Xu R, Selvaraj SK, Azimi N, Takoudis CG. Growth characteristics and properties of yttrium oxide thin films by atomic layer deposition from novel Y(iPrCp)3 precursor and O3 Ecs Transactions. 50: 107-116. DOI: 10.1149/05013.0107ecst |
0.833 |
|
| 2012 |
Xu R, Takoudis CG. Chemical passivation of GaSb-based surfaces by atomic layer deposited ZnS using diethylzinc and hydrogen sulfide Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3669519 |
0.62 |
|
| 2012 |
Tao Q, Overhage K, Jursich G, Takoudis C. On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces Thin Solid Films. 520: 6752-6756. DOI: 10.1016/J.Tsf.2012.07.004 |
0.472 |
|
| 2012 |
Rasul A, Zhang J, Gamota D, Takoudis C. High K nanocomposite dielectric for printed organic electronics applications Microelectronic Engineering. 93: 95-99. DOI: 10.1016/J.Mee.2011.11.016 |
0.761 |
|
| 2012 |
Xu R, Tao Q, Yang Y, Takoudis CG. Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(1 0 0) using (CpMe) 3Er precursor and ozone Applied Surface Science. 258: 8514-8520. DOI: 10.1016/J.Apsusc.2012.05.019 |
0.672 |
|
| 2011 |
Xu R, Huang J, Ghosh S, Takoudis CG. Deposition and characterization of atomic layer deposited ZnS thin films on p-type GaSb(100) using diethylzinc precursor and hydrogen sulfide Ecs Transactions. 41: 229-236. DOI: 10.1149/1.3633672 |
0.394 |
|
| 2011 |
Tao Q, Kueltzo A, Singh M, Jursich G, Takoudis CG. Atomic layer deposition of HfO2, TiO2, and Hf x Ti1-x O2 Using Metal (Diethylamino) Precursors and H2O Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3522758 |
0.444 |
|
| 2011 |
Banerjee K, Huang J, Ghosh S, Xu R, Takoudis CG, Plis E, Krishna S, Ketharanathan S, Chriss M. Surface study of thioacetamide and zinc sulfide passivated long wavelength infrared type-II strained layer superlattice Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.900198 |
0.551 |
|
| 2011 |
Tao Q, Jursich GM, Takoudis C. Investigation of Surface Sputtering and Post Annealing Effects on Atomic Layer Deposited ${\rm HfO}_{2}$ and ${\rm TiO}_{2}$ Ieee Transactions On Semiconductor Manufacturing. 24: 139-144. DOI: 10.1109/TSM.2011.2106167 |
0.301 |
|
| 2010 |
Singh MK, Yang Y, Takoudis CG, Tatarenko A, Srinivasan G, Kharel P, Lawes G. Multiferroic BiFeO3 thin films for multifunctional devices. Journal of Nanoscience and Nanotechnology. 10: 6195-9. PMID 21133173 DOI: 10.1166/Jnn.2010.2598 |
0.47 |
|
| 2010 |
Overhage K, Tao Q, Jursich G, Takoudis C. Selective Atomic Layer Deposition (SALD) of Titanium Dioxide on Silicon
and Copper Patterned Substrates The Journal of Undergraduate Research At the University of Illinois At Chicago. 4. DOI: 10.5210/Jur.V4I1.7481 |
0.461 |
|
| 2010 |
Walker R, Singh M, Yang Y, Takoudis C. Chemical Vapor Deposition of Nickel Ferrite Using Ni C5H5 2 and Fe
C5H4C4H9 C5H5 The Journal of Undergraduate Research At the University of Illinois At Chicago. 3. DOI: 10.5210/Jur.V3I1.7473 |
0.445 |
|
| 2010 |
Singh MK, Yang Y, Takoudis CG, Tatarenko A, Srinivasan G, Kharel P, Lawes G. Multiferroic BiFeO 3 thin films for multifunctional devices Journal of Nanoscience and Nanotechnology. 10: 6195-6199. DOI: 10.1166/jnn.2010.2598 |
0.364 |
|
| 2010 |
Tao Q, Jursich G, Takoudis C. Selective atomic layer deposition of HfO2 on copper patterned silicon substrates Applied Physics Letters. 96: 192105. DOI: 10.1063/1.3428771 |
0.473 |
|
| 2010 |
Rasul A, Zhang J, Gamota D, Singh M, Takoudis CG. Flexible high capacitance nanocomposite gate insulator for printed organic field-effect transistors Thin Solid Films. 518: 7024-7028. DOI: 10.1016/J.Tsf.2010.06.058 |
0.783 |
|
| 2010 |
Jiang L, Zhang J, Gamota D, Takoudis CG. Organic thin film transistors with novel thermally cross-linked dielectric and printed electrodes on flexible substrates Organic Electronics: Physics, Materials, Applications. 11: 959-963. DOI: 10.1016/J.Orgel.2010.02.010 |
0.387 |
|
| 2010 |
Jiang L, Zhang J, Gamota D, Takoudis CG. Enhancement of the field-effect mobility of solution processed organic thin film transistors by surface modification of the dielectric Organic Electronics: Physics, Materials, Applications. 11: 344-350. DOI: 10.1016/J.Orgel.2009.10.015 |
0.414 |
|
| 2009 |
Kueltzo A, Tao Q, Singh M, Jursich G, Takoudis C. Atomic Layer Deposited Al2O3 Film on Si 100 as Buffer Layer for
HfxTi1-xO2 Deposition The Journal of Undergraduate Research At the University of Illinois At Chicago. 3. DOI: 10.5210/Jur.V3I1.7471 |
0.513 |
|
| 2009 |
Tao Q, Jursich G, Majumder P, Singh M, Walkosz W, Gu P, Klie R, Takoudis C. Composition–Structure–Dielectric Property of Yttrium-Doped Hafnium Oxide Films Deposited by Atomic Layer Deposition Electrochemical and Solid-State Letters. 12: G50. DOI: 10.1149/1.3156833 |
0.693 |
|
| 2009 |
Singh M, Yang Y, Takoudis CG, Tatarenko A, Srinivasan G, Kharel P, Lawes G. Metallorganic chemical-vapor-deposited bife O3 films for tunable high-frequency devices Electrochemical and Solid-State Letters. 12. DOI: 10.1149/1.3080612 |
0.438 |
|
| 2009 |
Majumder P, Jursich G, Takoudis C. Structural phase transformation of Y2O3 doped Hf O2 films grown on Si using atomic layer deposition Journal of Applied Physics. 105. DOI: 10.1063/1.3132830 |
0.685 |
|
| 2009 |
Singh MK, Yang Y, Takoudis CG. Synthesis of multifunctional multiferroic materials from metalorganics Coordination Chemistry Reviews. 253: 2920-2934. DOI: 10.1016/J.Ccr.2009.09.003 |
0.396 |
|
| 2008 |
Majumder P, Takoudis C. Thermal stability of Ti/Mo and Ti/MoN nanostructures for barrier applications in Cu interconnects. Nanotechnology. 19: 205202. PMID 21825734 DOI: 10.1088/0957-4484/19/20/205202 |
0.624 |
|
| 2008 |
Kragh KC, Kueltzo A, Singh M, Tao Q, Jursich G, Takoudis CG. Atomic Layer Deposition of Hafnium Oxide on Silicon and Polymer Fibers at Temperatures below 100o C The Journal of Undergraduate Research At the University of Illinois At Chicago. 2. DOI: 10.5210/Jur.V2I1.7468 |
0.471 |
|
| 2008 |
Katamreddy R, Omarjee V, Feist B, Dussarrat C, Singh M, Takoudis C. Tuning of material and electrical properties of strontium titanates using process chemistry and composition Ecs Transactions. 16: 487-496. DOI: 10.1149/1.2981630 |
0.799 |
|
| 2008 |
Majumder P, Takoudis C. Reactively sputtered Mo-V nitride thin films as ternary diffusion barriers for copper metallization Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2955726 |
0.659 |
|
| 2008 |
Singh MK, Yang Y, Takoudis CG. Low-pressure metallorganic chemical vapor deposition of Fe 2O3 thin films on Si(100) using n-butylferrocene and oxygen Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2952812 |
0.489 |
|
| 2008 |
Katamreddy R, Feist B, Takoudis C. Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2946431 |
0.821 |
|
| 2008 |
Majumder P, Jursich G, Kueltzo A, Takoudis C. Atomic Layer Deposition of Y[sub 2]O[sub 3] Films on Silicon Using Tris(ethylcyclopentadienyl) Yttrium Precursor and Water Vapor Journal of the Electrochemical Society. 155: G152. DOI: 10.1149/1.2929825 |
0.693 |
|
| 2008 |
Gopireddy D, Takoudis CG. Diffusion-reaction modeling of silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.205304 |
0.808 |
|
| 2008 |
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C. Nitridation and oxynitridation of Si to control interfacial reaction with HfO2 Thin Solid Films. 516: 8498-8506. DOI: 10.1016/J.Tsf.2008.05.002 |
0.821 |
|
| 2008 |
Song X, Gopireddy D, Takoudis CG. Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor Thin Solid Films. 516: 6330-6335. DOI: 10.1016/J.Tsf.2007.12.148 |
0.826 |
|
| 2008 |
Piret F, Singh M, Takoudis CG, Su BL. Optical properties in the UV range of a Ta2O5 inverse opal photonic crystal designed by MOCVD Chemical Physics Letters. 453: 87-91. DOI: 10.1016/J.Cplett.2008.01.021 |
0.315 |
|
| 2008 |
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C. Effect of film composition and structure on the crystallization point of atomic layer deposited HfAlOx using metal (diethylamino) precursors and ozone Acta Materialia. 56: 710-718. DOI: 10.1016/J.Actamat.2007.10.017 |
0.809 |
|
| 2008 |
Takoudis CG. Atomic layer deposited Y2O3 thin films using novel cyclopentadienyl-type yttrium precursor Aiche Annual Meeting, Conference Proceedings. |
0.334 |
|
| 2008 |
Singh M, Yang Y, Takoudis CG. Multiferroic BiFeO3 thin films deposited by MOCVD method Aiche Annual Meeting, Conference Proceedings. |
0.309 |
|
| 2007 |
Awomolo A, Jiang L, Zhang J, Jursich G, Takoudis C. Dielectric Materials in Organic Thin Film Transistors The Journal of Undergraduate Research At the University of Illinois At Chicago. 1. DOI: 10.5210/Jur.V1I1.7451 |
0.417 |
|
| 2007 |
Majumder P, Tiwari M, Megaridis C, McAndrew J, Xu M, Belot J, Takoudis CG. Evaluation and Testing of Organometallic Precursor for Copper Direct-Write Mrs Proceedings. 1002. DOI: 10.1557/Proc-1002-N07-23 |
0.606 |
|
| 2007 |
Singh MK, Rosado J, Katamreddy R, Deshpande A, Takoudis CG. Investigation of local coordination and electronic structure of dielectric thin films from theoretical energy-loss spectra Materials Research Society Symposium Proceedings. 996: 121-126. DOI: 10.1557/Proc-0996-H05-27 |
0.788 |
|
| 2007 |
Singh MK, Katamreddy R, Takoudis CG. Effect of oxidizer on chemical vapor deposited hafnium oxide-based nanostructures and the engineering of their interfaces with Si(100) Materials Research Society Symposium Proceedings. 996: 98-102. DOI: 10.1557/Proc-0996-H05-10 |
0.82 |
|
| 2007 |
Majumder P, Katamreddy R, Takoudis CG. Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization Mrs Proceedings. 990. DOI: 10.1557/Proc-0990-B09-03 |
0.688 |
|
| 2007 |
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C. Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O3 and metal(diethylamino) precursors Journal of Materials Research. 22: 3455-3464. DOI: 10.1557/Jmr.2007.0439 |
0.817 |
|
| 2007 |
Majumder P, Katamreddy R, Takoudis C. Atomic layer deposited ultrathin HfO2 and Al2O 3 films as diffusion barriers in copper interconnects Electrochemical and Solid-State Letters. 10. DOI: 10.1149/1.2756633 |
0.823 |
|
| 2007 |
Song X, Takoudis CG. Cyclic chemical-vapor-deposited TiO2/Al2O3 film using trimethyl aluminum, tetrakis(diethylamino)titanium, and O 2 Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2744136 |
0.635 |
|
| 2007 |
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C. Erratum: ALD and Characterization of Aluminum Oxide Deposited on Si(100) Using Tris(diethylamino) Aluminum and Water Vapor [J. Electrochem. Soc., 153, C701 (2006)] Journal of the Electrochemical Society. 154: S5. DOI: 10.1149/1.2536622 |
0.396 |
|
| 2007 |
Song X, Takoudis CG. Effect of N H3 on the low pressure chemical vapor deposition of Ti O2 film at low temperature using tetrakis(diethylamino)titanium and oxygen Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 360-367. DOI: 10.1116/1.2699121 |
0.646 |
|
| 2007 |
Majumder P, Takoudis CG. Investigation on the diffusion barrier properties of sputtered MoW-N thin films in Cu interconnects Applied Physics Letters. 91. DOI: 10.1063/1.2800382 |
0.643 |
|
| 2007 |
Katamreddy R, Inman R, Jursich G, Soulet A, Nicholls A, Takoudis C. Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100) Thin Solid Films. 515: 6931-6937. DOI: 10.1016/J.Tsf.2007.02.001 |
0.824 |
|
| 2007 |
Majumder P, Katamreddy R, Takoudis C. Effect of film thickness on the breakdown temperature of atomic layer deposited ultrathin HfO2 and Al2O3 diffusion barriers in copper metallization Journal of Crystal Growth. 309: 12-17. DOI: 10.1016/J.Jcrysgro.2007.09.013 |
0.825 |
|
| 2007 |
Majumder P, Katamreddy R, Takoudis CG. Characterization of atomic layer deposited ultrathin HfO2 film as a diffusion barrier in Cu metallization Materials Research Society Symposium Proceedings. 990: 97-102. |
0.832 |
|
| 2006 |
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C. ALD and characterization of aluminum oxide deposited on Si(100) using tris(diethylamino) aluminum and water vapor Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2239258 |
0.819 |
|
| 2006 |
Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C. Controlling interfacial reactions between HfO2 and Si using ultrathin Al2O3 diffusion barrier layer Applied Physics Letters. 89. DOI: 10.1063/1.2425023 |
0.795 |
|
| 2006 |
Deshpande A, Inman R, Jursich G, Takoudis CG. Annealing behavior of atomic layer deposited hafnium oxide on silicon: Changes at the interface Journal of Applied Physics. 99. DOI: 10.1063/1.2191434 |
0.737 |
|
| 2006 |
Deshpande A, Inman R, Jursich G, Takoudis C. Characterization of hafnium oxide grown on silicon by atomic layer deposition: Interface structure Microelectronic Engineering. 83: 547-552. DOI: 10.1016/J.Mee.2005.12.008 |
0.727 |
|
| 2006 |
Gopireddy D, Takoudis CG, Gamota D, Zhang J, Brazis PW. Synthesis and electrical characterization of silicon nanoparticles for electronic applications 2006 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2006 Technical Proceedings. 1: 308-310. |
0.763 |
|
| 2005 |
Murali S, Deshpande A, Takoudis CG. Modeling of the metalorganic chemical vapor deposition of tantalum oxide from tantalum ethoxide and oxygen Industrial and Engineering Chemistry Research. 44: 6387-6392. DOI: 10.1021/Ie049198C |
0.462 |
|
| 2005 |
Dasgupta A, Jin DU, Takoudis CG. Film strain and compositional changes in thermally nitrided silicon dioxide thin films Thin Solid Films. 472: 270-274. DOI: 10.1016/J.Tsf.2004.06.148 |
0.421 |
|
| 2005 |
Dasgupta A, Takoudis CG, Lei Y, Browning ND. Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient Microelectronic Engineering. 77: 242-249. DOI: 10.1016/J.Mee.2004.11.006 |
0.45 |
|
| 2005 |
Song X, Takoudis CG. Metal organic chemical vapor deposition of titanium oxynitride films using tetrakis(diethylamino)titanium Aiche Annual Meeting, Conference Proceedings. 4620. |
0.417 |
|
| 2005 |
Gopireddy D, Takoudis CG. Adsorption and dissociation kinetics of dichlorosilane on silicon Surface Aiche Annual Meeting, Conference Proceedings. 4423. |
0.801 |
|
| 2005 |
Rasul AS, Zhang J, Gamota D, Takoudis CG. Nanocomposite dielectric gate insulator for organic field effect transistors Aiche Annual Meeting, Conference Proceedings. 13671. |
0.787 |
|
| 2005 |
Katamreddy RR, Inman R, Soulet A, Jursich G, Takoudis CG. Atomic layer deposition and film characterization of aluminum oxide grown on Si using tris(diethylamino)aluminum precursor and water Aiche Annual Meeting, Conference Proceedings. 5160. |
0.82 |
|
| 2005 |
Gopireddy D, Takoudis CG, Gamota D, Zhang J, Brazis PW. Fabrication of silicon nanowires using atomic layer deposition 2005 Nsti Nanotechnology Conference and Trade Show - Nsti Nanotech 2005 Technical Proceedings. 515-518. |
0.811 |
|
| 2005 |
Gopireddy D, Takoudis CG, Gamota D, Zhang J, Brazis PW. A methodology for controlled growth of silicon nanowires Aiche Annual Meeting, Conference Proceedings. 11280. |
0.77 |
|
| 2004 |
Deshpande A, Inman R, Jursich G, Takoudis C. Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 2035-2040. DOI: 10.1116/1.1781183 |
0.725 |
|
| 2004 |
Cui Z, Madsen JM, Takoudis CG. A thermal processing system for microelectronic materials Measurement Science and Technology. 15: 2099-2107. DOI: 10.1088/0957-0233/15/10/020 |
0.639 |
|
| 2004 |
Roy Chowdhuri A, Takoudis CG. Investigation of the aluminum oxide/Si(1 0 0) interface formed by chemical vapor deposition Thin Solid Films. 446: 155-159. DOI: 10.1016/S0040-6090(03)01311-7 |
0.52 |
|
| 2004 |
Roy Chowdhuri A, Jin DU, Takoudis CG. SiO2/Si(100) interface characterization using infrared spectroscopy: Estimation of substoichiometry and strain Thin Solid Films. 457: 402-405. DOI: 10.1016/J.Tsf.2003.11.293 |
0.394 |
|
| 2003 |
Dasgupta A, Takoudis CG. Low temperature Si0.85 Ge0.15 oxynitridation in wet-nitric oxide ambient Mrs Proceedings. 765. DOI: 10.1557/Proc-765-D3.26 |
0.42 |
|
| 2003 |
Dasgupta A, Roy Chowdhuri A, Takoudis CG. Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride Materials Research Society Symposium - Proceedings. 751: 133-138. DOI: 10.1557/Proc-751-Z3.45 |
0.525 |
|
| 2003 |
Cui Z, Takoudis CG. Initial oxidation of H-terminated Si(100) in O3 (950 ppm)/O2 and pure O2 Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1613295 |
0.578 |
|
| 2003 |
Chowdhuri AR, Jin D, Rosado J, Takoudis CG. Strain and substoichiometry at theSi(100)/SiO2interface Physical Review B. 67. DOI: 10.1103/Physrevb.67.245305 |
0.369 |
|
| 2003 |
Klie RF, Browning ND, Chowdhuri AR, Takoudis CG. Analysis of ultrathin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by in situ scanning transmission electron microscopy Applied Physics Letters. 83: 1187-1189. DOI: 10.1063/1.1597415 |
0.42 |
|
| 2003 |
Dasgupta A, Takoudis CG, Lei Y, Browning ND. Si0.85Ge0.15 oxynitridation in nitric oxide/nitrous oxide ambient Journal of Applied Physics. 94: 716-719. DOI: 10.1063/1.1576489 |
0.355 |
|
| 2003 |
Dasgupta A, Takoudis CG. Growth kinetics of thermal silicon oxynitridation in nitric oxide ambient Journal of Applied Physics. 93: 3615-3618. DOI: 10.1063/1.1555705 |
0.402 |
|
| 2003 |
Dasgupta A, Takoudis CG. Two-step processes for bimodal N concentration profiles in ultra-thin silicon oxynitrides Thin Solid Films. 436: 162-167. DOI: 10.1016/S0040-6090(03)00608-4 |
0.425 |
|
| 2003 |
Dasgupta A, Takoudis CG. Low temperature Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient Materials Research Society Symposium - Proceedings. 765: 127-132. |
0.305 |
|
| 2003 |
Roy Chowdhuri A, Takoudis CG, Klie RF, Browning ND. SiO2 formation at the aluminum oxide/Si(100) interface Materials Research Society Symposium - Proceedings. 747: 335-340. |
0.399 |
|
| 2002 |
Chowdhuri AR, Takoudis CG, Klie RF, Browning ND. SiO2 Formation at the Aluminum Oxide/Si(100) Interface Mrs Proceedings. 747. DOI: 10.1557/Proc-747-V6.4 |
0.495 |
|
| 2002 |
Chowdhuri AR, Jin D, Takoudis CG. Experimental and Theoretical Studies of the Si(100)/SiO2 Interface Formed by Wet and Dry Oxidation Mrs Proceedings. 747. DOI: 10.1557/Proc-747-V6.2 |
0.402 |
|
| 2002 |
Dasgupta A, Takoudis CG, Martel G. On the Argon Annealing-Based Improvements of the Properties of Ultra-Thin Oxynitrides Nitrided with NH3 Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B4.10 |
0.453 |
|
| 2002 |
Dasgupta A, Takoudis CG. Low Temperature Oxynitridation of SiGe in NO/N2O Ambients Mrs Proceedings. 715. DOI: 10.1557/Proc-715-A10.6 |
0.476 |
|
| 2002 |
Dasgupta A, Takoudis CG. Process-structure relationships of nitrided oxides and oxynitrides Materials Research Society Symposium - Proceedings. 686: 255-260. DOI: 10.1557/Proc-686-A10.4 |
0.463 |
|
| 2002 |
Roy Chowdhuri A, Takoudis CG, Klie RF, Browning ND. Metalorganic chemical vapor deposition of aluminum oxide on Si: Evidence of interface SiO2 formation Applied Physics Letters. 80: 4241-4243. DOI: 10.1063/1.1483903 |
0.526 |
|
| 2002 |
Dasgupta A, Takoudis CG. Low temperature oxynitridation of SiGe in NO/N2O ambients Materials Research Society Symposium - Proceedings. 715: 503-508. |
0.369 |
|
| 2002 |
Dasgupta A, Takoudis CG, Martel G. On the argon annealing-based improvements of the properties of ultra-thin oxynitrides nitrided with NH3 Materials Research Society Symposium - Proceedings. 716: 177-182. |
0.353 |
|
| 2002 |
Dasgupta A, Matthes RA, Takoudis CG, Dang SS. Web-based instruction on the fundamentals and design of micro- and nanoelectronic processes: Innovations, challenges and benefits International Journal of Engineering Education. 18: 539-549. |
0.515 |
|
| 2001 |
Cui Z, Takoudis CG. Design and simulation of a vacuum micropump Proceedings of Spie - the International Society For Optical Engineering. 4560: 263-273. DOI: 10.1117/12.443067 |
0.535 |
|
| 2001 |
Cui Z, Takoudis CG. Characterization of ultrathin silicon oxide films with mirror-enhanced polarized reflectance Fourier transform infrared spectroscopy Journal of Applied Physics. 89: 5170-5176. DOI: 10.1063/1.1334364 |
0.666 |
|
| 2000 |
Dang SS, Takoudis CG. Angle-resolved XPS studies of interfacial bonding states in silicon oxynitrides fabricated using different thermal methodologies Materials Research Society Symposium - Proceedings. 586: 99-104. DOI: 10.1557/Proc-586-99 |
0.679 |
|
| 2000 |
Cui Z, Madsen JM, Takoudis CG. Rapid thermal oxidation of silicon in ozone Journal of Applied Physics. 87: 8181-8186. DOI: 10.1063/1.373515 |
0.631 |
|
| 2000 |
Madsen JM, Cui Z, Takoudis CG. Low temperature oxidation of SiGe in ozone: Ultrathin oxides Journal of Applied Physics. 87: 2046-2051. DOI: 10.1063/1.372134 |
0.632 |
|
| 2000 |
Dang SS, Takoudis CG. Rate-limiting steps during nitrogen incorporation in furnace-grown silicon oxynitrides: effects on wafer-to-wafer uniformity Thin Solid Films. 366: 225-231. DOI: 10.1016/S0040-6090(00)00744-6 |
0.685 |
|
| 2000 |
Dang SS, Takoudis CG. Process improvements for reductions in total charge and interface trap densities oftiffirmally-grown sub-3.5nm-tfflck silicon nitrides Materials Research Society Symposium - Proceedings. 592: 213-218. |
0.658 |
|
| 2000 |
Dang SS, Matthes RA, Takoudis CG. Web-based course in the fundamentals of microelectronics processing Chemical Engineering Education. 34: 350-355. |
0.51 |
|
| 1999 |
Dang SS, Takoudis CG. Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides Mrs Proceedings. 592. DOI: 10.1557/Proc-592-213 |
0.694 |
|
| 1999 |
Richardson C, Takoudis CG. Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system Journal of the Electrochemical Society. 146: 3270-3276. DOI: 10.1149/1.1392466 |
0.373 |
|
| 1999 |
Dang SS, Takoudis CG. Optimization of bimodal nitrogen concentration profiles in silicon oxynitrides Journal of Applied Physics. 86: 1326-1330. DOI: 10.1063/1.370890 |
0.664 |
|
| 1999 |
Chan HYH, Takoudis CG, Weaver MJ. Oxide Film Formation And Oxygen Adsorption On Copper In Aqueous Media As Probed By Surface-Enhanced Raman Spectroscopy Journal of Physical Chemistry B. 103: 357-365. DOI: 10.1021/Jp983787C |
0.416 |
|
| 1999 |
Chan HYH, Takoudis CG, Weaver MJ. In-situ monitoring of chemical vapor deposition at ambient pressure by surface-enhanced raman spectroscopy: Initial growth of tantalum(V) oxide on platinum [1] Journal of the American Chemical Society. 121: 9219-9220. DOI: 10.1021/Ja991707S |
0.381 |
|
| 1998 |
Weaver MJ, Williams CT, Zou S, Chan HYH, Takoudis CG. Catalysis Letters. 52: 181-190. DOI: 10.1023/A:1019092024757 |
0.312 |
|
| 1998 |
Williams CT, Takoudis CG, Weaver MJ. Methanol Oxidation on Rhodium As Probed by Surface-Enhanced Raman and Mass Spectroscopies: Adsorbate Stability, Reactivity, and Catalytic Relevance Journal of Physical Chemistry B. 102: 406-416. DOI: 10.1021/Jp972353Z |
0.339 |
|
| 1998 |
Chan HYH, Williams CT, Weaver MJ, Takoudis CG. Methanol Oxidation on Palladium Compared to Rhodium at Ambient Pressures as Probed by Surface-Enhanced Raman and Mass Spectroscopies Journal of Catalysis. 174: 191-200. DOI: 10.1006/Jcat.1998.1955 |
0.33 |
|
| 1998 |
Dang SS, Takoudis CG. Instruction via web-based semiconductor simulation tools: The case of "fundamentals and design of microelectronics processing" Chemical Engineering Education. 32: 242-245. |
0.511 |
|
| 1997 |
Lee IM, Wang WC, Koh MTK, Denton JP, Kvam EP, Neudeck GW, Takoudis CG. Selective epitaxial growth of strained silicon-germanium films in tubular hot-wall low pressure chemical vapor deposition systems Materials Research Society Symposium - Proceedings. 448: 265-270. DOI: 10.1557/Proc-448-265 |
0.461 |
|
| 1997 |
Kongetira P, Neudeck GW, Takoudis CG. Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1902-1907. DOI: 10.1116/1.589576 |
0.334 |
|
| 1997 |
Lee I, Takoudis CG. Analysis and characterization of native oxide growth on epitaxial Si1−xGex films after a chemical clean Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 3154-3157. DOI: 10.1116/1.580860 |
0.462 |
|
| 1997 |
Singhvi S, Takoudis CG. Growth kinetics of furnace silicon oxynitridation in nitrous oxide ambients Journal of Applied Physics. 82: 442-448. DOI: 10.1063/1.365835 |
0.479 |
|
| 1997 |
Williams CT, Black CA, Weaver MJ, Takoudis CG. Adsorption and Hydrogenation of Carbon Monoxide on Polycrystalline Rhodium at High Gas Pressures Journal of Physical Chemistry B. 101: 2874-2883. DOI: 10.1021/Jp963429E |
0.357 |
|
| 1997 |
Chan HYH, Takoudis CG, Weaver MJ. High-pressure oxidation of ruthenium as probed by surface-enhanced Raman and X-ray photoelectron spectroscopies Journal of Catalysis. 172: 336-345. DOI: 10.1006/Jcat.1997.1841 |
0.396 |
|
| 1997 |
Lee IM, Takoudis CG. Analysis and characterization of native oxide growth on epitaxial Si1-xGex films after a chemical clean Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 3154-3157. |
0.375 |
|
| 1997 |
Lee IM, Jansons A, Takoudis CG. Effects of water vapor and chlorine on the epitaxial growth of Si1-xGex films by chemical vapor deposition: Thermodynamic analysis Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 880-885. |
0.337 |
|
| 1997 |
Lee IM, Takoudis CG, Wang WC, Denton JP, Neudeck GW, Koh MTK, Kvam EP. Process improvements in the selective epitaxial growth of Si1-xGex/Si strained layers in a conventional hot-wall LPCVD system Journal of the Electrochemical Society. 144: 1095-1099. |
0.309 |
|
| 1996 |
Leet I-, Wang W-, Koh MTK, Denton J, Kvam EP, Neudeck GW, Takoudis CG. Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems Mrs Proceedings. 448. DOI: 10.1557/PROC-448-265 |
0.355 |
|
| 1996 |
Gaynor W, Takoudis CG, Neudeck GW. Process-property relationships between silicon selective epitaxial growth ambients and degradation of insulators Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 3224-3227. DOI: 10.1116/1.580217 |
0.409 |
|
| 1996 |
Lee I, Wang W, Neudeck G, Takoudis C. Kinetics and modeling of low pressure chemical vapor deposition of Si1−xGex epitaxial thin films Chemical Engineering Science. 51: 2681-2686. DOI: 10.1016/0009-2509(96)00136-4 |
0.455 |
|
| 1996 |
Williams CT, Tolia AA, Weaver MJ, Takoudis CG. Surface-enhanced Raman spectroscopy as an in-situ real-time probe of no reduction over rhodium at high gas pressures Chemical Engineering Science. 51: 1673-1682. DOI: 10.1016/0009-2509(96)00026-7 |
0.396 |
|
| 1996 |
Williams CT, Tolia AA, Chan HYH, Takoudis CG, Weaver MJ. Surface-Enhanced Raman Spectroscopy as anin SituReal-Time Probe of Catalytic Mechanisms at High Gas Pressures:: The CO–NO Reaction on Platinum and Palladium Journal of Catalysis. 163: 63-76. DOI: 10.1006/Jcat.1996.0305 |
0.345 |
|
| 1996 |
Lee IM, Wang WC, Neudeck GW, Takoudis CG. Kinetics and modeling of low pressure chemical vapor deposition of Si1-xGex epitaxial thin films Chemical Engineering Science. 51: 2681-2686. |
0.346 |
|
| 1996 |
Lee IMR, Takoudis CG. Process-property relationships in Si1-xGex chemical vapor deposition: Thermodynamic and kinetic studies Journal of the Electrochemical Society. 143: 1719-1726. |
0.318 |
|
| 1995 |
Tolia AA, Williams CT, Weaver MJ, Takoudis CG. Surface-enhanced Raman spectroscopy as an in situ real-time probe of catalytic mechanisms at high gas pressures : the NO-H2 reaction on rhodium Langmuir. 11: 3438-3445. DOI: 10.1021/J100013A034 |
0.359 |
|
| 1994 |
Yang SK, Peter S, Takoudis CG. Fundamentals of two-step etching techniques for ideal silicon-hydrogen termination of silicon(111) Journal of Applied Physics. 76: 4107-4112. DOI: 10.1063/1.357360 |
0.398 |
|
| 1994 |
Tolia AA, Smiley RJ, Delgass WN, Takoudis CG, Weaver MJ. Surface Oxidation of Rhodium at Ambient Pressures as Probed by Surface-Enhanced Raman and X-Ray Photoelectron Spectroscopies Journal of Catalysis. 150: 56-70. DOI: 10.1006/Jcat.1994.1322 |
0.374 |
|
| 1993 |
Ravi R, Takoudis CG. Binding Energies of H and Cl on Si(111) Journal of the Electrochemical Society. 140: 195-200. DOI: 10.1149/1.2056084 |
0.323 |
|
| 1993 |
Tolia AA, Weaver MJ, Takoudis CG. In Situ Surface-Enhanced Raman Spectroscopic Study of CO Oxidation by NO and O2 Over Rhodium-Coated Gold Surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2013-2018. DOI: 10.1116/1.578401 |
0.348 |
|
| 1992 |
Frost R, Mordaunt K, Yang SK, Neudeck GW, Takoudis CG. Fundamental studies on the selective epitaxial growth of silicon-based films Chemical Engineering Science. 47: 2969-2974. DOI: 10.1016/0009-2509(92)87160-R |
0.406 |
|
| 1992 |
Tolia A, Wilke T, Weaver MJ, Takoudis CG. Real-time measurements of reaction intermediates and adsorbed species in heterogeneous catalytic reaction systems Chemical Engineering Science. 47: 2781-2786. DOI: 10.1016/0009-2509(92)87129-E |
0.322 |
|
| 1991 |
Oh IH, Takoudis CG, Neudeck GW. Mathematical modeling of epitaxial silicon growth in pancake chemical vapor deposition reactors Journal of the Electrochemical Society. 138: 554-567. DOI: 10.1149/1.2085628 |
0.316 |
|
| 1991 |
Oh IH, Takoudis CG. Modeling of epitaxial silicon growth from the SiH2Cl 2-H2-HCl system in an rf-heated pancake reactor Journal of Applied Physics. 69: 8336-8345. DOI: 10.1063/1.347446 |
0.345 |
|
| 1991 |
Wilke T, Gao X, Takoudis CG, Weaver MJ. Surface-enhanced Raman spectroscopy as a probe of adsorption at transition metal-high-pressure gas interfaces: nitric oxide, carbon monoxide, and oxygen on platinum-, rhodium-, and ruthenium-coated gold Langmuir. 7: 714-721. DOI: 10.1021/La00052A020 |
0.305 |
|
| 1991 |
Wilke T, Gao X, Takoudis CG, Weaver MJ. Surface-enhanced Raman spectroscopy at transition metal-gas interfaces: adsorption and reactions of sulfur dioxide on platinum-, rhodium-, and ruthenium-coated gold Journal of Catalysis. 130: 62-75. DOI: 10.1016/0021-9517(91)90092-I |
0.352 |
|
| 1989 |
Friedrich JA, Kastelic M, Neudeck GW, Takoudis CG. The dependence of silicon selective epitaxial growth rates on masking oxide thickness Journal of Applied Physics. 65: 1713-1716. DOI: 10.1063/1.342943 |
0.38 |
|
| 1989 |
Takoudis CG, Kastelic MM. Selective epitaxial growth of silicon in a barrel reactor Chemical Engineering Science. 44: 2049-2062. DOI: 10.1016/0009-2509(89)85141-3 |
0.397 |
|
| 1988 |
Kastelic M, Oh I, Takoudis CG, Friedrich JA, Neudeck GW. Selective epitaxial growth of silicon in pancake reactors Chemical Engineering Science. 43: 2031-2036. DOI: 10.1016/0009-2509(88)87080-5 |
0.374 |
|
| 1986 |
Wilke TE, Turner KA, Takoudis CG. Chemical vapor deposition of silicon under reduced pressure in hot-wall reactors Chemical Engineering Science. 41: 643-650. DOI: 10.1016/0009-2509(86)87141-X |
0.372 |
|
| 1985 |
Nowobilski P, Takoudis CG. Reaction between nitric oxide and ammonia on polycrystalline Pt: A mathematical model of rate oscillations Chemical Engineering Science. 40: 1751-1757. DOI: 10.1016/0009-2509(85)80037-3 |
0.322 |
|
| 1985 |
Agny RM, Takoudis CG. Synthesis of methanol from carbon monoxide and hydrogen over a copper-zinc oxide-alumina catalyst Industrial and Engineering Chemistry Product Research and Development. 24: 50-55. DOI: 10.1002/Chin.198525135 |
0.32 |
|
| 1983 |
Takoudis CG, Schmidt LD. Kinetics of N2O decomposition on polycrystalline platinum Journal of Catalysis. 80: 274-279. DOI: 10.1016/0021-9517(83)90252-X |
0.5 |
|
| 1983 |
Takoudis CG, Schmidt LD. Dilution effects in the dynamics of ammonia oxidation on platinum with an inert or a product species in the feed mixture Journal of Catalysis. 84: 235-239. DOI: 10.1016/0021-9517(83)90101-X |
0.492 |
|
| 1982 |
Takoudis CG, Schmidt LD, Aris R. Isothermal oscillations in surface reactions with coverage independent parameters Chemical Engineering Science. 37: 69-76. DOI: 10.1016/0009-2509(82)80068-7 |
0.6 |
|
| 1981 |
Takoudis CG, Schmidt LD, Aris R. Isothermal sustained oscillations in a very simple surface reaction Surface Science. 105: 325-333. DOI: 10.1016/0039-6028(81)90165-5 |
0.592 |
|
| 1981 |
Takoudis CG, Schmidt LD. Multiple steady states in reaction controlled surface catalysed reactions Chemical Engineering Science. 36: 377-386. DOI: 10.1016/0009-2509(81)85018-X |
0.478 |
|
| 1981 |
Takoudis CG, Schmidt LD, Aris R. Steady state multiplicity in surface reactions with coverage dependent parameters Chemical Engineering Science. 36: 1795-1802. DOI: 10.1016/0009-2509(81)80127-3 |
0.605 |
|
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