| Year |
Citation |
Score |
| 2009 |
Genç A, Banerjee R, Thompson GB, Maher DM, Johnson AW, Fraser HL. Complementary techniques for the characterization of thin film Ti/Nb multilayers. Ultramicroscopy. 109: 1276-81. PMID 19553019 DOI: 10.1016/J.Ultramic.2009.05.015 |
0.35 |
|
| 2006 |
Ehrstein J, Richter C, Chandler-Horowitz D, Vogel E, Young C, Shah S, Maher D, Foran B, Hung PY, Diebold A. A Comparison of Thickness Values for Very Thin SiO[sub 2] Films by Using Ellipsometric, Capacitance-Voltage, and HRTEM Measurements Journal of the Electrochemical Society. 153: F12. DOI: 10.1149/1.2133710 |
0.378 |
|
| 2003 |
Ehrstein JR, Richter CA, Chandler-Horowitz D, Vogel EM, Ricks DR, Young C, Spencer S, Shah S, Maher D, Foran BC, Diebold AC, Hung P. Thickness Evaluation for 2nm SiO2 Films, a Comparison of Ellipsometric, Capacitance‐Voltage and HRTEM Measurements Characterization and Metrology For Ulsi Technology. 683: 331-336. DOI: 10.1063/1.1622491 |
0.402 |
|
| 2001 |
Chambers JJ, Busch BW, Schulte WH, Gustafsson T, Garfunkel E, Wang S, Maher DM, Klein TM, Parsons GN. Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon Applied Surface Science. 181: 78-93. DOI: 10.1016/S0169-4332(01)00373-7 |
0.506 |
|
| 1999 |
Oberhofer A, Chen J, Koh K, Schrader M, Shah S, Venables R, Young C, Xu M, Kuehn R, Maher D, Venables D. Process Definition for Obtaining Ultra-Thin Silicon Oxides Using Full-Wafer Electrical and Optical Measurements Mrs Proceedings. 567: 573. DOI: 10.1557/Proc-567-573 |
0.337 |
|
| 1999 |
O'Neil PA, Öztürk MC, Batchelor AD, Venables D, Maher DM. Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates Journal of the Electrochemical Society. 146: 3079-3086. DOI: 10.1149/1.1392053 |
0.401 |
|
| 1999 |
O'Neil PA, Öztürk MC, Batchelor AD, Venables D, Xu M, Maher DM. Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates I. Role of implanted BF2 Journal of the Electrochemical Society. 146: 3070-3078. DOI: 10.1149/1.1392052 |
0.456 |
|
| 1999 |
O'Neil PA, Öztürk MC, Batchelor AD, Xu M, Maher DM. Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine Journal of the Electrochemical Society. 146: 2344-2352. DOI: 10.1149/1.1391938 |
0.456 |
|
| 1999 |
O'Neil PA, Öztürk MC, Batchelor AD, Xu M, Maher DM. Quality of selective silicon epitaxial films deposited using disilane and chlorine Journal of the Electrochemical Society. 146: 2337-2343. DOI: 10.1149/1.1391937 |
0.513 |
|
| 1999 |
Wolfe DM, Hinds BJ, Wang F, Lucovsky G, Ward BL, Xu M, Nemanlch RJ, Maher DM. Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2170-2177. DOI: 10.1116/1.581745 |
0.484 |
|
| 1999 |
Klein TM, Niu D, Epling WS, Li W, Maher DM, Hobbs CC, Hegde RI, Baumvol IJR, Parsons GN. Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100) Applied Physics Letters. 75: 4001-4003. DOI: 10.1063/1.125519 |
0.511 |
|
| 1999 |
O'Neil PA, Öztürk MC, Batchelor AD, Maher DM. Effects of oxygen on selective silicon deposition using disilane Materials Letters. 38: 418-422. DOI: 10.1016/S0167-577X(98)00200-6 |
0.428 |
|
| 1998 |
Neogi SS, Venables D, Na Z, Maher DM. Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 471-475. DOI: 10.1116/1.589832 |
0.373 |
|
| 1998 |
Li VZQ, Mirabedini MR, Hornung BE, Heinisch HH, Xu M, Batchelor D, Maher DM, Wortman JJ, Kuehn RT. Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases Journal of Applied Physics. 83: 5469-5476. DOI: 10.1063/1.367404 |
0.536 |
|
| 1997 |
O'Neil PA, Öztürk MC, Violette KE, Batchelor D, Christensen K, Maher DM. Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine Journal of the Electrochemical Society. 144: 3309-3315. DOI: 10.1149/1.1838003 |
0.432 |
|
| 1997 |
Neogi SS, Venables D, Ma Z, Maher DM, Taylor M, Corcoran S. Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique Journal of Applied Physics. 82: 5811-5815. DOI: 10.1063/1.366449 |
0.358 |
|
| 1997 |
Li VZQ, Mirabedini MR, Kuehn RT, Wortman JJ, Öztürk MC, Batchelor D, Christensen K, Maher DM. Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications Applied Physics Letters. 71: 3388-3390. DOI: 10.1063/1.120344 |
0.532 |
|
| 1996 |
O'Neil PA, Violette KE, Öztürk MC, Batchelor D, Maher DM. Low Temperature Selective Si Epitaxy Using Si2H6 and Cl2: Investigations into Selectivity Robustness and Epitaxial Film Quality Mrs Proceedings. 429. DOI: 10.1557/Proc-429-355 |
0.437 |
|
| 1996 |
Cho SM, Christensen K, Wolfe D, Ying H, Lee DR, Lucovsky G, Maher DM. Substrate surface dependence of the microstructure of μc-Si,Ge:H deposited by reactive magnetron sputtering (RMS) Materials Research Society Symposium - Proceedings. 405: 241-246. DOI: 10.1557/Proc-405-241 |
0.499 |
|
| 1996 |
Cho SM, Wolfe D, Christensen K, Lucovsky G, Maher DM. Electric and optical properties of μc-Si,Ge:H alloys deposited by reactive magnetron sputtering (RMS) Materials Research Society Symposium - Proceedings. 403: 471-476. DOI: 10.1557/Proc-403-471 |
0.403 |
|
| 1996 |
Li VZQ, Mirabedini MR, Kuehn RT, Gladden D, Batchelor D, Christenson K, Wortman JJ, Ozturk MC, Maher DM. Rapid thermal chemical vapor deposition of polycrystalline silicon-germanium films on SiO2 and their properties Materials Research Society Symposium - Proceedings. 403: 333-338. DOI: 10.1557/Proc-403-333 |
0.498 |
|
| 1996 |
Violette KE, O'Neil PA, Öztürk MC, Christensen K, Maher DM. On the role of chlorine in selective silicon epitaxy by chemical vapor deposition Journal of the Electrochemical Society. 143: 3290-3296. DOI: 10.1149/1.1837200 |
0.48 |
|
| 1996 |
Violette KE, Öztürk MC, Christensen KN, Maher DM. Silicon nucleation and film evolution on silicon dioxide using disilane: Rapid thermal chemical vapor deposition of very smooth silicon at high deposition rates Journal of the Electrochemical Society. 143: 649-657. DOI: 10.1149/1.1836495 |
0.521 |
|
| 1996 |
Hu YZ, Diehl DJ, Zhao CY, Wang CL, Liu Q, Irene EA, Christensen KN, Venable D, Maher DM. Real time investigation of nucleation and growth of silicon on silicon dioxide using silane and disilane in a rapid thermal processing system Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14: 744-750. DOI: 10.1116/1.588708 |
0.526 |
|
| 1996 |
Agarwal A, Christensen K, Venables D, Maher DM, Rozgonyi GA. Oxygen gettering and precipitation at MeV Si+ ion implantation induced damage in silicon Applied Physics Letters. 69: 3899-3901. DOI: 10.1063/1.117563 |
0.369 |
|
| 1996 |
Violette KE, O'Neil PA, Öztürk MC, Christensen K, Maher DM. Low temperature selective silicon epitaxy by ultra high vacuum rapid thermal chemical vapor deposition using Si2H6, H2 and Cl2 Applied Physics Letters. 68: 66-68. DOI: 10.1063/1.116759 |
0.479 |
|
| 1996 |
Ban I, Öztürk MC, Christensen K, Maher DM. Effects of carbon implantation on generation lifetime in silicon Applied Physics Letters. 68: 499-501. DOI: 10.1063/1.116379 |
0.329 |
|
| 1996 |
Cho SM, Christensen C, Lucovsky G, Maher DM. Deposition of microcrystalline hydrogenated silicon,germanium alloy (μc-SixGe1-x:H) films by reactive magnetron sputtering (RMS) Journal of Non-Crystalline Solids. 198: 587-591. DOI: 10.1016/0022-3093(95)00768-7 |
0.394 |
|
| 1995 |
Cho SM, Christensen K, Wolfe D, Ying H, Lee DR, Lucovsky G, Maher DM. Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS) Mrs Proceedings. 405. DOI: 10.1557/PROC-405-241 |
0.416 |
|
| 1995 |
Cho SM, Wolfe D, Christensen K, Lucovsky G, Maher DM. Electric and Optical Properties of μc-Si,Ge:H Alloys Deposited by Reactive Magnetron Sputtering (RMS) Mrs Proceedings. 403. DOI: 10.1557/PROC-403-471 |
0.325 |
|
| 1995 |
Violette KE, Öztürk MC, O'Neill PA, Christensen K, Maher DM. Low Temperature Selective Silicon Epitaxy Using Si 2 H 6 , H 2 and Cl 2 in Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition Mrs Proceedings. 387: 335. DOI: 10.1557/Proc-387-335 |
0.47 |
|
| 1995 |
Miles DS, Mirabedini MR, Venables D, Wortman JJ, Maher DM. High quality RTCVD sidewall spacer dielectrics Materials Research Society Symposium - Proceedings. 387: 277-284. DOI: 10.1557/Proc-387-277 |
0.448 |
|
| 1995 |
Ban I, Öztürk MC, Christensen K, Maher DM. Characterization of MOS Devices Fabricated on Carbon Implanted Silicon Substrates Mrs Proceedings. 378: 737. DOI: 10.1557/Proc-378-737 |
0.32 |
|
| 1995 |
Cho SM, Wolfe D, He SS, Christensen K, Maher DM, Lucovsky G. Deposition of microcrystalline Si,Ge (μc-Si,Ge) alloys by reactive magnetron sputtering Materials Research Society Symposium - Proceedings. 358: 781-786. DOI: 10.1557/Proc-358-781 |
0.468 |
|
| 1995 |
Sanganeria MK, Öziürk MC, Harris G, Violette KE, Lee CA, Maher DM. Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition of Epitaxial Silicon on (100) Silicon II. Carbon Incorporation into layers and at Interfaces of Multilayer Structures Journal of the Electrochemical Society. 142: 3970-3974. DOI: 10.1149/1.2048443 |
0.415 |
|
| 1995 |
Sanganeria MK, Öztürk MC, Harris G, Violette KE, Ban I, Lee CA, Maher DM. Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition of Epitaxial Silicon onto (100) Silicon I . The Influence of Prebake on (Epitaxy/Substrate) Interfacial Oxygen and Carbon Levels Journal of the Electrochemical Society. 142: 3961-3969. DOI: 10.1149/1.2048442 |
0.449 |
|
| 1995 |
Sanganeria MK, Violette KE, Öztürk MC, Harris G, Maher DM. Boron incorporation in epitaxial silicon using Si[sub 2]H[sub 6] and B[sub 2]H[sub 6] in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor Journal of the Electrochemical Society. 142: 285-289. DOI: 10.1149/1.2043906 |
0.425 |
|
| 1995 |
Buaud PP, Hu YZ, Spanos L, Irene EA, Christensen KN, Venables D, Maher DM. Study of silicon epitaxial growth on silicon substrates exposed to Ar electron cyclotron resonance plasmas Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1442-1446. DOI: 10.1116/1.588168 |
0.49 |
|
| 1995 |
Li M, Hu YZ, Irene EA, Liu L, Christensen KN, Maher DM. Ellipsometry study of the nucleation of Si epitaxy by electron cyclotron resonance plasma chemical vapor deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 105-110. DOI: 10.1116/1.588000 |
0.496 |
|
| 1995 |
Augustine BH, Irene EA, He YJ, Price KJ, McNeil LE, Christensen KN, Maher DM. Visible light emission from thin films containing Si, O, N, and H Journal of Applied Physics. 78: 4020-4030. DOI: 10.1063/1.359925 |
0.5 |
|
| 1995 |
Sanganeria MK, Öztürk MC, Violette KE, Harris G, Lee CA, Maher DM. Low thermal budget in situ removal of oxygen and carbon on silicon for silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor Applied Physics Letters. 1255. DOI: 10.1063/1.113254 |
0.481 |
|
| 1995 |
Violette KE, Öztürk MC, Christensen K, Maher DM. Smooth amorphous silicon deposition on silicon dioxide with high deposition rates by rapid thermal chemical vapor deposition using disilane Materials Letters. 25: 305-309. DOI: 10.1016/0167-577X(95)00184-0 |
0.519 |
|
| 1995 |
Ashburn SP, öztürk MC, Harris G, Maher DM. A study of self-aligned formation of C54 Ti(Si1-xGex)2 to P+ and N+ Si0.7Ge0.3 alloys using rapid thermal annealing Journal of Electronic Materials. 24: 773-780. DOI: 10.1007/Bf02659739 |
0.425 |
|
| 1995 |
Grider DT, Öztürk MC, Ashburn SP, Wortman JJ, Harris G, Maher D. Ultra-shallow raised p + -n junctions formed by diffusion from selectively deposited in-situ doped Si 0.7 Ge 0.3 Journal of Electronic Materials. 24: 1369-1376. DOI: 10.1007/Bf02655450 |
0.492 |
|
| 1994 |
Cho S, Wolfe D, He S, Christensen K, Maher D, Lucovsky G. Deposition of Microcrystalline Si,Ge (µc-Si,Ge) Alloys by Reactive Magnetron Sputtering Mrs Proceedings. 358. DOI: 10.1557/PROC-358-781 |
0.382 |
|
| 1994 |
Violette KE, Öztürk MC, Harris G, Sanganeria MK, Lee A, Maher DM. Nucleation and Growth of Polycrystalline Silicon Films in an Ultra high Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Using Disilane and Hydrogen Mrs Proceedings. 343: 673. DOI: 10.1557/Proc-343-673 |
0.474 |
|
| 1994 |
Ren X, Öztürk MC, Harris G, Batchelor D, Maher DM. Oxide Removal on Silicon by Rapid Thermal Processing Using SiH 2 CI 2 and H 2 Mrs Proceedings. 342. DOI: 10.1557/Proc-342-243 |
0.35 |
|
| 1994 |
Miles DS, Harris GS, Venables D, Mirabedini MR, Wortman JJ, Maher DM, Hauser JR. Comparison of film quality and step coverage for silicon dioxide dielectrics formed by RTCVD using tetraethoxysilane and silane Materials Research Society Symposium - Proceedings. 338: 43-49. DOI: 10.1557/Proc-338-43 |
0.429 |
|
| 1994 |
Violette KE, Sanganeria MK, Öztürk MC, Harris G, Maher DM. Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Journal of the Electrochemical Society. 141: 3269-3273. DOI: 10.1149/1.2059317 |
0.521 |
|
| 1994 |
Maher DM, Zhang B. Characterization of structure/dopant behavior by electron microscopy Journal of Vacuum Science & Technology B. 12: 347-352. DOI: 10.1116/1.587123 |
0.356 |
|
| 1994 |
Sanganeria MK, Violette KE, Öztürk MC, Harris G, Lee CA, Maher DM. Low thermal budget in situ cleaning and passivation for silicon epitaxy in a multichamber rapid thermal processing cluster tool Materials Letters. 21: 137-141. DOI: 10.1016/0167-577X(94)90207-0 |
0.395 |
|
| 1994 |
Ren X, Ozturk MC, Harris G, Batchelor D, Maher DM. Oxide removal on silicon by rapid thermal processing using SiH2Cl2 and H2 Materials Research Society Symposium - Proceedings. 342: 243-248. |
0.368 |
|
| 1993 |
Kuehn R, Xu X, Holcombe D, Misra V, Wortman J, Hauser J, Wang Q, Maher D. Gate Quality Oxides Prepared by Rapid Thermal Chemical Vapor Deposition Mrs Proceedings. 334. DOI: 10.1557/Proc-334-531 |
0.428 |
|
| 1993 |
Violette KE, Sanganeria MK, Öztürk MC, Harris G, Maher DM. Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen Mrs Proceedings. 334: 519. DOI: 10.1557/Proc-334-519 |
0.477 |
|
| 1993 |
Sanganeria MK, Violette KE, ÖZtÜRk MC, Harris G, Lee CA, Maher DM. Cleaning during Initial Stages of Epitaxial Growth in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Mrs Proceedings. 334: 463. DOI: 10.1557/Proc-334-463 |
0.49 |
|
| 1993 |
Liu HX, Schneider TP, Montgomery J, Chen YL, Buczkowski A, Shimura F, Nemanich R, Maher DM, Korzec D, Engemann J. A Study of Surface and Subsurface Properties of Si (100) After Hydrogen ion-Beam Exposure Mrs Proceedings. 315: 231-236. DOI: 10.1557/Proc-315-231 |
0.337 |
|
| 1993 |
Schneider TP, Cho J, Chen YL, Maher DM, Nemanich R. Plasma Surface Interactions and Surface Properties for Remote H-Plasma Cleaning of Si(100) Mrs Proceedings. 315: 197-209. DOI: 10.1557/Proc-315-197 |
0.314 |
|
| 1993 |
Xu X, Misra V, Harris GS, Spanos L, Öztiirk MC, Wortman JJ, Maher DM, Irene EA. Characterization of Oxygen-Doped and Non-Oxygen-Doped Polysilicon Films Prepared by Rapid Thermal Chemical Vapor Deposition Mrs Proceedings. 303. DOI: 10.1557/Proc-303-49 |
0.387 |
|
| 1993 |
Grider DT, ÖztÜrk MC, Wortman JJ, Harris GS, Maher DM. Fabrication of Ultra-Shallow P + -N and N + -P Junctions by Diffusion From Selectively Deposited, Ion-Implanted and In-Situ Doped Si 0.7 Ge 0.3 Mrs Proceedings. 303. DOI: 10.1557/Proc-303-31 |
0.437 |
|
| 1993 |
Zhang B, Maher DM, Denker MS, Ray MA. Stability of Ultra-Thin Gate Oxides with Boron Doped Polysilicon Gate Structures After Rapid Thermal Annealing Mrs Proceedings. 303. DOI: 10.1557/Proc-303-247 |
0.359 |
|
| 1993 |
Johnson FS, Misra V, Wortman JJ, Martin LR, Harris GA, Maher DM. Selective Removal of Silicon-Germanium: Chemical and Reactive Ion Etching Mrs Proceedings. 298. DOI: 10.1557/Proc-298-157 |
0.459 |
|
| 1993 |
Chen Y, Bentley J, Wang C, Lucovsky G, Maher D. Electron Microscopy Studies of Undoped and Phosphorus Doped Si:H and Si,C:H Films Mrs Proceedings. 297. DOI: 10.1557/PROC-297-711 |
0.38 |
|
| 1993 |
Ma Y, Yasuda T, Chen YL, Lucovsky G, Maher DM. Electrical properties of oxide-nitride-oxide, ONO, heterostructures fabricated by low temperature remote PECVD Materials Research Society Symposium Proceedings. 284: 147-152. DOI: 10.1557/Proc-284-147 |
0.428 |
|
| 1993 |
Turner WA, Williams MJ, Chen YL, Maher DM, Lucovsky G. Electrical properties of boron-doped μc-Si:H prepared by reactive magnetron sputtering from c-Si targets Materials Research Society Symposium Proceedings. 283: 567-572. DOI: 10.1557/Proc-283-567 |
0.425 |
|
| 1993 |
Yasuda T, Ma Y, Chen YL, Lucovsky G, Maher D. Effects of predeposition HF/NH4F treatments on the electrical properties of SiO2/Si structures formed by low‐temperature plasma‐assisted oxidation and deposition processes Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 11: 945-951. DOI: 10.1116/1.578573 |
0.464 |
|
| 1993 |
Ashburn SP, Öztürk MC, Harris G, Maher DM. Phase transitions during solid-state formation of cobalt germanide by rapid thermal annealing Journal of Applied Physics. 74: 4455-4460. DOI: 10.1063/1.354387 |
0.484 |
|
| 1993 |
Xu XL, Misra V, Öztürk MC, Wortman JJ, Harris GS, Maher DM, Spanos L, Irene EA. Effects of oxygen doping on properties of microcrystalline silicon film grown using rapid thermal chemical vapor deposition Journal of Electronic Materials. 22: 1345-1351. DOI: 10.1007/Bf02817698 |
0.518 |
|
| 1993 |
Xu X, Kuehn RT, Öztürk MC, Wortman JJ, Nemanich RJ, Harris GS, Maher DM. Influence of dry and wet cleaning on the properties of rapid thermal grown and deposited gate dielectrics Journal of Electronic Materials. 22: 335-339. DOI: 10.1007/Bf02661387 |
0.414 |
|
| 1993 |
Lucovsky G, Wang C, Williams MJ, Chen YL, Maher DM. Transport and microstructure of microcrystalline silicon alloys Materials Research Society Symposium Proceedings. 283: 443-454. |
0.352 |
|
| 1993 |
Chen YL, Bentley J, Wang C, Lucovsky G, Maher DM. Electron microscopy studies of undoped and phosphorus doped Si:H and Si,C:H films Materials Research Society Symposium Proceedings. 297: 711-716. |
0.38 |
|
| 1993 |
Grider DT, Ozturk MC, Wortman JJ, Harris GS, Maher DM. Fabrication of ultra-shallow P+-N and N+-P junctions by diffusion from selectively deposited, ion-implanted and in-situ doped Materials Research Society Symposium Proceedings. 303: 31-36. |
0.334 |
|
| 1992 |
Ma Y, Yasuda T, Chen YL, Lucovsky G, Maher DM. Electrical Properties of Oxide-Nitride-Oxide, Ono, Heterostructures Fabricated by Low Temperature Remote PECVD Mrs Proceedings. 284. DOI: 10.1557/PROC-284-147 |
0.327 |
|
| 1992 |
Turner WA, Williams MJ, Chen YL, Maher DM, Lucovsky G. Electrical Properties of Boron-Doped μc-Si:H Prepared by Reactive Magnetron Sputtering from c-Si Targets Mrs Proceedings. 283. DOI: 10.1557/PROC-283-567 |
0.324 |
|
| 1992 |
Xu X, Kuehn RT, Melzak JM, Hames GA, Wortman JJ, Öztürk MC, Nemanich RJ, Harris G, Maher D. Influence of Surface Pre-Cleaning on Electrical Properties of Rapid Thermal Oxide and Rapid Thermal Chemical Vapor Deposition Oxide Mrs Proceedings. 259: 81. DOI: 10.1557/Proc-259-81 |
0.382 |
|
| 1992 |
Ren X, Öztürk MC, Wortman JJ, Zhang B, Maher DM, Batchelor D. Deposition and characterization of polysilicon films deposited by rapid thermal processing Journal of Vacuum Science & Technology B. 10: 1081-1086. DOI: 10.1116/1.586082 |
0.479 |
|
| 1992 |
Chen YL, Wang C, Lucovsky G, Maher DM, Nemanich RJ. Transmission electron microscopy and vibrational spectroscopy studies of undoped and doped Si,H and Si,C:H films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 874-880. DOI: 10.1116/1.577687 |
0.496 |
|
| 1992 |
Ashburn SP, Öztürk MC, Wortman JJ, Harris G, Honeycutt J, Maher DM. Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing Journal of Electronic Materials. 21: 81-86. DOI: 10.1007/Bf02670924 |
0.428 |
|
| 1990 |
Ren X, Öztüirk MC, Wortman JJ, Batchelor D, Maher D, Blat C, Niccolian E. Electrical and Structural Characterization of Polysilicon Deposited in a Rapid Thermal Processor Mrs Proceedings. 182. DOI: 10.1557/Proc-182-29 |
0.361 |
|
| 1990 |
Lee DM, Maher DM, Shimura F, Rozgonyl GA. Misfit dislocation gettering and associated precipitation in Si/Si(Ge) epitaxial layers Proceedings - the Electrochemical Society. 90: 639-650. |
0.352 |
|
| 1985 |
Seidel TE, Maher DM, Knoell R. DEFECT AND IMPURITY BEHAVIOR FROM THE RECRYSTALLIZATION OF AMORPHOUS SILICON LAYERS . 523-529. |
0.319 |
|
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