Jeong-Yeop Nahm, Ph.D. - Publications
Affiliations: | 2000 | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical Engineering, Condensed Matter PhysicsYear | Citation | Score | |||
---|---|---|---|---|---|
2004 | Hong Y, Nahm JY, Kanicki J. 100 dpi 4-a-Si:H TFTs active-matrix organic polymer light-emitting display Ieee Journal On Selected Topics in Quantum Electronics. 10: 16-25. DOI: 10.1109/Jstqe.2004.824075 | 0.632 | |||
2003 | Hong Y, Nahm JY, Kanicki J. Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display Applied Physics Letters. 83: 3233-3235. DOI: 10.1063/1.1617372 | 0.634 | |||
2002 | Martin S, Nahm JY, Kanicki J. Gate-planarized organic polymer thin film transistors Journal of Electronic Materials. 31: 512-519. DOI: 10.1007/S11664-002-0108-5 | 0.571 | |||
2001 | Martin S, Chiang CS, Nahm JY, Li T, Kanicki J, Ugai Y. Influence of the amorphous silicon thickness on top gate thin-film transistor electrical performances Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40: 530-537. DOI: 10.1143/Jjap.40.530 | 0.642 | |||
2001 | Kanicki J, Kim JH, Nahm JY, He Y, Hattori R. Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays Sid Conference Record of the International Display Research Conference. 315-318. | 0.644 | |||
2000 | Nahm JY, Lan JH, Kanicki J. High-voltage hydrogenated amorphous silicon thin-film transistor for reflective active-matrix cholesteric LCD Materials Research Society Symposium - Proceedings. 558: 125-128. DOI: 10.1557/Proc-558-125 | 0.645 | |||
2000 | Martin S, Nahm JY, Kim J, Kanicki J. Many-body universal approach to a-Si:H TFTs electrical instabilities Sid Conference Record of the International Display Research Conference. 423-426. | 0.554 | |||
1999 | Nahm JY, Lan JH, Kanicki J. Hydrogenated amorphous-silicon thin-film transistor structure with the buried field plate Technical Digest - International Electron Devices Meeting. 309-312. | 0.633 | |||
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