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Levent Trabzon, Ph.D. - Publications

Affiliations: 
2000 Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, General Physics
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23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Birol SZ, Fucucuoglu R, Cadirci S, Sayi-Yazgan A, Trabzon L. Investigation on the effects of variable shear stress on monocyte cell morphology Micro & Nano Letters. 12: 881-885. DOI: 10.1049/Mnl.2017.0432  0.317
2016 Zuvin M, Mansur N, Birol SZ, Trabzon L, Sayı Yazgan A. Human breast cancer cell enrichment by Dean flow driven microfluidic channels Microsystem Technologies. 22: 645-652. DOI: 10.1007/S00542-015-2425-7  0.321
2015 Baysal G, Önder S, Göcek I, Trabzon L, Kizil H, Kök FN, Kayaoʇlu BK. Design and fabrication of a new nonwoven-textile based platform for biosensor construction Sensors and Actuators, B: Chemical. 208: 475-484. DOI: 10.1016/J.Snb.2014.11.042  0.314
2014 Kizil H, Pehlivaner MO, Trabzon L. Surface plasma characterization of polyimide films for flexible electronics Advanced Materials Research. 970: 132-135. DOI: 10.4028/Www.Scientific.Net/Amr.970.132  0.326
2014 Ghalehbeygi OT, Trabzon L, Francis L, Kizil H. Fabrication method of MEMS based Clamped-Clamped resonant magnetometer Advanced Materials Research. 970: 106-110. DOI: 10.4028/Www.Scientific.Net/Amr.970.106  0.335
2014 Baysal G, Neşe Kök F, Trabzon L, Kizil H, Göcek I, Kayaoǧlu BK. Microfluidic nonwoven-based device as a potential biosensor for sweat analysis Applied Mechanics and Materials. 490: 274-279. DOI: 10.4028/Www.Scientific.Net/Amm.490-491.274  0.31
2014 Baysal G, Önder S, Göcek İ, Trabzon L, Kızıl H, Kök FN, Kayaoğlu BK. Microfluidic device on a nonwoven fabric: A potential biosensor for lactate detection Textile Research Journal. 84: 1729-1741. DOI: 10.1177/0040517514528565  0.3
2008 Arslan E, Iğdil MC, Yazici H, Tamerler C, Bermek H, Trabzon L. Mechanical properties and biocompatibility of plasma-nitrided laser-cut 316L cardiovascular stents. Journal of Materials Science. Materials in Medicine. 19: 2079-86. PMID 17968502 DOI: 10.1007/S10856-007-3302-4  0.333
2006 Trabzon L, Iǧdil MC. On the materials properties of thin film plasma-nitrided austenitic stainless steel Surface and Coatings Technology. 200: 4195-4200. DOI: 10.1016/J.Surfcoat.2004.12.012  0.311
2003 Trabzon L, Awadelkarim OO. Changes in material properties of low-k interlayer dielectric polymers induced by exposure to plasmas Microelectronic Engineering. 65: 463-477. DOI: 10.1016/S0167-9317(03)00165-5  0.617
2001 Suliman SA, Gallogunta N, Trabzon L, Hao J, Dolny G, Ridley R, Grebs T, Benjamin J, Kocon C, Zeng J, Knoedler CM, Horn M, Awadelkarim OO, Fonash SJ, Ruzyllo J. The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs Annual Proceedings - Reliability Physics (Symposium). 308-314. DOI: 10.1109/RELPHY.2001.922920  0.661
2001 Trabzon L, Awadelkarim OO. The degradation of MOSFETs induced by the via etching of interlayer low-k polymers Proceedings of the International Conference On Microelectronics, Icm. 2001: 103-106. DOI: 10.1109/ICM.2001.997498  0.614
2001 Suliman SA, Gollagunta N, Trabzon L, Hao J, Ridley RS, Knoedler CM, Dolny GM, Awadelkarim OO, Fonash SJ. The dependence of UMOSFET characteristics and reliability on geometry and processing Semiconductor Science and Technology. 16: 447-454. DOI: 10.1088/0268-1242/16/6/305  0.671
2001 Dolny G, Gollagunta N, Suliman S, Trabzon L, Horn M, Awadelkarim OO, Fonash SJ, Knoedler CM, Hao J, Ridley R, Kocon C, Grebs T, Zeng J. Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETS using the charge-pumping technique Ieee International Symposium On Power Semiconductor Devices and Ics (Ispsd). 431-434.  0.623
2001 Suliman SA, Gallogunta N, Trabzon L, Hao J, Dolny G, Ridley R, Grebs T, Benjamin J, Kocon C, Zeng J, Knoedler CM, Horn M, Awadelkarim OO, Fonash SJ, Ruzyllo J. The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs Annual Proceedings - Reliability Physics (Symposium). 308-314.  0.441
2000 Trabzon L, Awadelkarim OO. Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low-k polymer interlayer dielectrics Semiconductor Science and Technology. 15: 309-314. DOI: 10.1088/0268-1242/15/4/301  0.683
1999 Trabzon L, Awadelkarim OO, Werking J. Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing Journal of Vacuum Science & Technology B. 17: 2216-2221. DOI: 10.1116/1.590896  0.687
1999 Trabzon L. Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 2216-2221.  0.466
1998 Trabzon L, Awadelkarim OO, Werking J. The effects of interlayer dielectric deposition and processing on the reliability of N-channel transistors Solid-State Electronics. 42: 2031-2037. DOI: 10.1016/S0038-1101(98)00175-0  0.664
1998 Trabzon L, Awadelkarim OO. Damage to n-mOSFETs from electrical stress relationship to processing damage and impact on device reliability Microelectronics Reliability. 38: 651-657. DOI: 10.1016/S0026-2714(97)00194-7  0.667
1997 Trabzon L, Awadelkarim OO. Electrical-stress simulation of plasma-damage to submicron metal-oxide-silicon field-effect transistors: Comparison between direct current and alternating current stresses Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 15: 692-696. DOI: 10.1116/1.580803  0.671
1997 Trabzon L, Awadelkarim OO, Werking J, Bersuker G, Chan YD. Comparison between direct current and sinusoidal current stressing of gate oxides and oxide/silicon interfaces in metal-oxide-silicon field-effect transistors Journal of Applied Physics. 81: 1575-1580. DOI: 10.1063/1.363892  0.684
1996 Trabzon L, Awadelkarim OO, Werking J, Bersuker G, Chan YD. Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's Ieee Electron Device Letters. 17: 569-571. DOI: 10.1109/55.545773  0.666
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