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Dieter G. Ast - Publications

Affiliations: 
Cornell University, Ithaca, NY, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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64 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Smith EH, King PDC, Soukiassian A, Ast DG, Schlom DG. Hybrid reflections from multiple x-ray scattering in epitaxial oxide films Applied Physics Letters. 111: 131903. DOI: 10.1063/1.4993477  0.309
2016 Bin Z, Kate ER, David ML, Chen-yang C, Ast DG, Raymond GG, Michael OT. Effects of rf sputtering parameters on c-axis aligned crystalline (caac) ingazno4 films using design of experiment (doe) approach Ecs Journal of Solid State Science and Technology. 5: P368-P375. DOI: 10.1149/2.0361606Jss  0.323
2015 Chung CY, Zhu B, Greene RG, Thompson MO, Ast DG. High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor Applied Physics Letters. 107. DOI: 10.1063/1.4935026  0.358
2015 Chung CY, Zhu B, Ast DG, Greene RG, Thompson MO. High mobility amorphous InGaZnO4 thin film transistors formed by CO2 laser spike annealing Applied Physics Letters. 106. DOI: 10.1063/1.4914373  0.344
2014 Lynch DM, Zhu B, Levin BDA, Muller DA, Ast DG, Greene RG, Thompson MO. Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4 Applied Physics Letters. 105. DOI: 10.1063/1.4905208  0.338
2007 Wang L, Ellison AJG, Ast DG. Investigation of surface mass transport in Al-Si-Ca-oxide glasses via the thermal induced decay of submicron surface gratings Journal of Applied Physics. 101. DOI: 10.1063/1.2400085  0.31
2006 Mkhoyan KA, Silcox J, Ellison A, Ast D, Dieckmann R. Full recovery of electron damage in glass at ambient temperatures. Physical Review Letters. 96: 205506. PMID 16803186 DOI: 10.1103/Physrevlett.96.205506  0.313
2004 Liu J, Nemchuk NI, Ast DG, Couillard JG. Etch rate and surface morphology of plasma etched glass and glass-ceramic substrates Journal of Non-Crystalline Solids. 342: 110-115. DOI: 10.1016/J.Jnoncrysol.2004.07.004  0.347
2003 Watson GP, Ast DG. Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs Journal of Applied Physics. 94: 1513-1517. DOI: 10.1063/1.1581378  0.342
2001 Liu J, Nemchuk NI, Ast DG, Couillard JG. Etch rate and surface morphology of plasma etched glass substrates Materials Research Society Symposium - Proceedings. 657. DOI: 10.1557/Proc-657-Ee5.32  0.575
2001 Qin W, Ast DG, Kamins TI. Transmission electron microscopy study of polycrystalline Si and Si0.69Ge0.31 thin films Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40: 4806-4810. DOI: 10.1143/Jjap.40.4806  0.392
2000 Qin W, Ast DG, Kamins TI. High resolution electron microscopy (HREM) study of chemically vapor deposited polycrystalline Si1-xGex thin films Materials Research Society Symposium - Proceedings. 609. DOI: 10.1557/Proc-609-A8.4  0.388
2000 Qin W, Ast DG, Kamins TI. Resistivity and hall voltage investigation of phosphorus segregation in polycrystalline Si1-xGex thin films Materials Research Society Symposium - Proceedings. 609. DOI: 10.1557/Proc-609-A8.3  0.368
2000 Qin W, Ast DG, Kamins TI. Segregation of phosphorus and germanium to grain boundaries in chemical vapor deposited silicon-germanium films determined by scanning transmission electron microscopy Journal of Electronic Materials. 29. DOI: 10.1007/S11664-000-0174-5  0.371
1999 Qin W, Ast DG, Kamins TI. A Stem Study of P and Ge Segregation to Grain Boundaries in Si 1-x Ge x Thin Films Mrs Proceedings. 557. DOI: 10.1557/Proc-557-201  0.362
1999 Lam LK, Chen DL, Ast DG. Plasma Nitride Hydrogen Source Encapsulation Method to Hydrogenate Polysilicon Thin Film Transistors Electrochemical and Solid-State Letters. 2: 140-142. DOI: 10.1149/1.1390762  0.346
1999 Lam LK, Chen SK, Ast DG. Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals Applied Physics Letters. 74: 1866-1868. DOI: 10.1063/1.123695  0.347
1998 Kim H, Couillard JG, Ast DG. Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon Applied Physics Letters. 72: 803-805. DOI: 10.1063/1.120898  0.363
1997 Couillard JG, Ast DG, Moore CB, Fehlner FP. Effect of barrier layer thickness on the performance of thin film transistors on glass substrates Proceedings of Spie - the International Society For Optical Engineering. 3014: 166-169. DOI: 10.1117/12.270292  0.345
1997 Couillard JG, Ast DG, Umbach C, Blakely JM, Moore CB, Fehlner FP. Chemical treatment of glass substrates Journal of Non-Crystalline Solids. 222: 429-434. DOI: 10.1016/S0022-3093(97)90146-0  0.368
1996 Matragrano MJ, Ast DG, Shealy JR, Krishnamoorthy V. Anisotropic strain relaxation of GaInP epitaxial layers in compression and tension Journal of Applied Physics. 79: 8371-8378. DOI: 10.1063/1.362556  0.332
1996 Matragrano MJ, Ast DG, Watson GP, Shealy JR. Measurement of the mean free path of dislocation glide in the InGaAs/GaAs materials system Journal of Applied Physics. 79: 776-780. DOI: 10.1063/1.360824  0.355
1995 Whittingham KL, Emerson DT, Shealy JR, Matragrano MJ, Ast DG. Effect of phosphorus composition on the structural quality of GaInP/GaAsP short-period superlattices Applied Physics Letters. 67: 3741. DOI: 10.1063/1.115368  0.311
1995 Whittingham KL, Emerson DT, Shealy JR, Matragrano MJ, Ast DG. Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy Journal of Electronic Materials. 24: 1611-1615. DOI: 10.1007/Bf02676819  0.349
1994 Edwards WJ, Chieh YS, Lin S, Ast DG, Krusius JP, Kamins TI. Dopant implantation and activation in polycrystalline-SiGe Materials Research Society Symposium - Proceedings. 343: 685-690. DOI: 10.1557/Proc-343-685  0.338
1994 Edwards WJ, Sutsu H, Ast DG, Kamins TI. Diffusion of Ge along grain boundaries during oxidation of polycrystalline silicon-germanium films Materials Research Society Symposium - Proceedings. 319: 183-185. DOI: 10.1557/Proc-319-183  0.371
1994 Tsutsu H, Edwards WJ, Ast DG, Kamins TI. Oxidation of polycrystalline-SiGe alloys Applied Physics Letters. 64: 297-299. DOI: 10.1063/1.111954  0.307
1994 Matragrano MJ, Krishnamoorthy V, Ast DG, Shealy JR. Characterization and elimination of surface defects in Gax In1-xP grown by organometallic vapor phase epitaxy Journal of Crystal Growth. 142: 275-283. DOI: 10.1016/0022-0248(94)90332-8  0.383
1993 Watson GP, Ast DG, Anderson TJ, Pathangey B. A Misfit Dislocation Blocking Mechanism in Continuous InGaAs Layers Grown on Patterned GaAs Mrs Proceedings. 308. DOI: 10.1557/Proc-308-401  0.363
1993 Watson GP, Ast DG, Anderson TJ, Pathangey B. The barrier to misfit dislocation glide in continuous, strained, epitaxial layers on patterned substrates Journal of Applied Physics. 74: 3103-3110. DOI: 10.1063/1.354576  0.359
1993 Matragrano MJ, Watson GP, Ast DG, Anderson TJ, Pathangey B. Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs Applied Physics Letters. 62: 1417-1419. DOI: 10.1063/1.108697  0.324
1992 Watson GP, Ast DG, Anderson TJ, Pathangey B, Hayakawa Y. The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates Journal of Applied Physics. 71: 3399-3407. DOI: 10.1063/1.350936  0.367
1991 Watson GP, Ast DG, Anderson TJ, Hayakawa Y. Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates Applied Physics Letters. 58: 2517-2519. DOI: 10.1063/1.104862  0.381
1991 Watson GP, Ast DG, Anderson TJ, Hayakawa Y, Pathangey B. The thermal stability of lattice mismatched InGaAs grown on patterned GaAs Journal of Electronic Materials. 20: 703-708. DOI: 10.1007/Bf02665955  0.427
1990 Moore CB, Ast DG. Measurements of Grain Boundary Trap Density and Hydrogen Diffusivity in Polycrystalline Silicon Fet's Mrs Proceedings. 182: 341. DOI: 10.1557/Proc-182-341  0.349
1990 Watson GP, Thompson MO, Ast DG, Fischer-Colbrie A, Miller J. The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs Journal of Electronic Materials. 19: 957-965. DOI: 10.1007/Bf02652922  0.409
1990 Hyland SL, Dubé C, Ast DG. Investigation of the reversibility of deformation in silicon sheets Journal of Electronic Materials. 19: 873-879. DOI: 10.1007/Bf02652911  0.383
1989 Fitzgerald EA, Watson GP, Proano RE, Ast DG, Kirchner PD, Pettit GD, Woodall JM. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area Journal of Applied Physics. 65: 2220-2237. DOI: 10.1063/1.342834  0.563
1989 Watson GP, Ast D, Elliot AG. Variation of lattice parameter with silicon concentration in n‐doped, liquid‐encapsulated Czochralski GaAs single crystals Applied Physics Letters. 54: 271-273. DOI: 10.1063/1.100987  0.307
1988 Fitzgerald EA, Kirchner PD, Proano R, Pettit GD, Woodall JM, Ast DG. Elimination of interface defects in mismatched epilayers by a reduction in growth area Applied Physics Letters. 52: 1496-1498. DOI: 10.1063/1.99110  0.543
1988 Katcki J, Ast D. Observation of radiation defects generated in edge defined film fed growth silicon ribbons under 400 kV irradiation in the high‐resolution electron microscope Journal of Applied Physics. 64: 1125-1130. DOI: 10.1063/1.341872  0.331
1988 Fitzgerald EA, Ast DG, Kirchner PD, Pettit GD, Woodall JM. Structure and recombination in InGaAs/GaAs heterostructures Journal of Applied Physics. 63: 693-703. DOI: 10.1063/1.340059  0.562
1987 Fitzgerald EA, Kirchner PD, Petit GD, Woodall JM, Ast DG. The Formation and Cathodoluminescence Activity of Buffer Layer Edge Dislocations in In 0.12 Ga 0.88 As/GaAs Heterostructures Mrs Proceedings. 104. DOI: 10.1557/Proc-104-633  0.394
1986 Fitzgerald E, Kavanagh K, Ast D, Kirchner P, Pettit G, Woodall J. Cathodoluminescence of Ingaas-GaAs Single Heterostructures Mrs Proceedings. 82. DOI: 10.1557/Proc-82-367  0.399
1985 Feng SQ, Kalejs JP, Ast DG. Carbon Precipitation in Cz and Efg Silicon Mrs Proceedings. 59: 439. DOI: 10.1557/Proc-59-439  0.333
1985 Nussbaum G, Ast DG. Creep Deformation of Ultrafine Grained Ni 7 5 B 1 7 Si 8 Mrs Proceedings. 58. DOI: 10.1557/Proc-58-421  0.339
1985 Gleichmann R, Cunningham B, Ast DG. Process-induced defects in solar cell silicon Journal of Applied Physics. 58: 223-229. DOI: 10.1063/1.335716  0.407
1984 Henderson DW, Ast DG. Viscosity and crystallization kinetics of As2Se3 Journal of Non-Crystalline Solids. 64: 43-70. DOI: 10.1016/0022-3093(84)90205-9  0.318
1983 Vaudin MD, Cunningham B, Ast DG. The structure of second and third order twin boundaries in silicon Scripta Metallurgica. 17: 191-198. DOI: 10.1016/0036-9748(83)90097-2  0.303
1982 Vaudin M, Ast D. The Structure of a Near Coincidence Σ=5, [001] Twist Boundary in Silicon Mrs Proceedings. 14: 369. DOI: 10.1557/Proc-14-369  0.314
1982 Cunningham B, Strunk H, Ast DG. First and second order twin boundaries in edge defined film growth silicon ribbon Applied Physics Letters. 40: 237-239. DOI: 10.1063/1.93058  0.364
1982 Cunningham B, Strunk HP, Ast DG. High resolution electron microscopy of a Σ = 27 boundary in silicon Scripta Metallurgica. 16: 349-352. DOI: 10.1016/0036-9748(82)90147-8  0.32
1982 Yetter WE, Kramer EJ, Ast DG. Flux pinning by thin chromium layers Journal of Low Temperature Physics. 49: 227-239. DOI: 10.1007/Bf00681589  0.302
1981 Cunningham B, Strunk H, Ast D. The Electrical Activity at Twin Boundaries in Silicon Mrs Proceedings. 5. DOI: 10.1557/Proc-5-51  0.329
1981 Ast DG, Cunningham B, Strunk H. Ebic/Tem Investigation of Defects in Solar Cell Silicon Mrs Proceedings. 5. DOI: 10.1557/Proc-5-167  0.372
1981 Sullivan TD, Ast DG. EBIC INVESTIGATION OF HYDROGEN PASSIVATED STRUCTURAL DEFECTS IN EFG SILICON RIBBON Mat Res Soc Symp Proc. 2: 303-308. DOI: 10.1557/Proc-2-303  0.307
1980 Strunk H, Cunningham B, Ast D. Characterization of Defects in Silicon Ribbons By Combined Ebic and Hvem Mrs Proceedings. 2. DOI: 10.1557/Proc-2-297  0.355
1978 Kramer EJ, Krenz HG, Ast DG. Mechanical properties of methanol crazes in poly(methyl methacrylate) Journal of Polymer Science Part B. 16: 349-366. DOI: 10.1002/Pol.1978.180160214  0.304
1976 Krakow W, Ast DG. Surface structure and surface lattice constant of (001) vapor deposited Au films using high resolution transmission electron microscopy Surface Science. 58: 485-496. DOI: 10.1016/0039-6028(76)90484-2  0.359
1976 Krenz HG, Kramer EJ, Ast DG. The structure of solvent crazes in polystyrene Journal of Materials Science. 11: 2211-2221. DOI: 10.1007/Bf00752084  0.35
1971 Ast DG, Seidman DN. Noble gas imaging of gold in the field ion microscope Surface Science. 28: 19-31. DOI: 10.1016/0039-6028(71)90081-1  0.508
1969 Ast DG, Seidman DN. A bakeable, demountable field ion microscope with a continuous transfer liquid helium cryostat Journal of Physics E: Scientific Instruments. 2: 575-578. DOI: 10.1088/0022-3735/2/7/305  0.505
1969 Ast DG, Seidman DN. ERRATA: The Field Ion Microscopy of Gold Applied Physics Letters. 14: 234-234. DOI: 10.1063/1.1652793  0.493
1968 Ast DG, Seidman DN. The field ion microscopy of gold Applied Physics Letters. 13: 348-350. DOI: 10.1063/1.1652464  0.519
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