| Year |
Citation |
Score |
| 2003 |
Awazu K, Roorda S, Brebner JL, Ishii S, Shima K. Structure of Latent Tracks Created by Swift Heavy Ions in Amorphous SiO2and Zinc Phosphate Glass Japanese Journal of Applied Physics. 42: 3950-3957. DOI: 10.1143/Jjap.42.3950 |
0.363 |
|
| 2002 |
Tchebotareva A, Brebner JL, Roorda S, Desjardins P, White CW. Structural properties of InAs nanocrystals formed by sequential implantation of In and As ions in the Si (100) matrix Journal of Applied Physics. 92: 4664-4671. DOI: 10.1063/1.1507822 |
0.441 |
|
| 2001 |
Héliou R, Brebner JL, Roorda S. Role of implantation temperature on residual damage in ion-implanted 6H-SiC Semiconductor Science and Technology. 16: 836-843. DOI: 10.1088/0268-1242/16/10/305 |
0.49 |
|
| 2001 |
Tchebotareva AL, Brebner JL, Roorda S, White CW. Properties of InAs nanocrystals in silicon formed by sequential ion implantation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 175: 187-192. DOI: 10.1016/S0168-583X(00)00660-1 |
0.507 |
|
| 2001 |
Héliou R, Brebner JL, Roorda S. Optical and structural properties of 6H–SiC implanted with silicon as a function of implantation dose and temperature Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 175: 268-273. DOI: 10.1016/S0168-583X(00)00633-9 |
0.497 |
|
| 2000 |
Fujimaki M, Ohki Y, Brebner JL, Roorda S. Fabrication of long-period optical fiber gratings by use of ion implantation. Optics Letters. 25: 88-9. PMID 18059791 DOI: 10.1364/Ol.25.000088 |
0.413 |
|
| 2000 |
Awazu K, Ishii S, Shima K, Roorda S, Brebner JL. Structure of latent tracks created by swift heavy-ion bombardment of amorphousSiO2 Physical Review B. 62: 3689-3698. DOI: 10.1103/Physrevb.62.3689 |
0.383 |
|
| 2000 |
Beaudoin M, Desjardins P, Aı̈t-Ouali A, Brebner JL, Yip RY, Marchand H, Isnard L, Masut RA. Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1−x/GayIn1−yP multilayers on InP(001) Journal of Applied Physics. 87: 2320-2326. DOI: 10.1063/1.372181 |
0.402 |
|
| 2000 |
Fujimaki M, Nishihara Y, Ohki Y, Brebner JL, Roorda S. Ion-implantation-induced densification in silica-based glass for fabrication of optical fiber gratings Journal of Applied Physics. 88: 5534-5537. DOI: 10.1063/1.1315616 |
0.426 |
|
| 1999 |
Montero C, Gomez-Reino C, Brebner JL. Planar Bragg gratings made by excimer-laser modification of ion-exchanged waveguides. Optics Letters. 24: 1487-9. PMID 18079841 DOI: 10.1364/Ol.24.001487 |
0.447 |
|
| 1999 |
Aït-Ouali A, Brebner JL, Yip RY-, Masut RA. Analysis of the Stokes shift in InAsP/InP and InGaP/InP multiple quantum wells Journal of Applied Physics. 86: 6803-6809. DOI: 10.1063/1.371755 |
0.414 |
|
| 1999 |
Tchebotareva A, Brebner J, Roorda S, Albert J. Effect of proton implantation on the photosensitivity of SMF-28 optical fiber Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 148: 687-691. DOI: 10.1016/S0168-583X(98)00704-6 |
0.414 |
|
| 1999 |
Essid M, Albert J, Brebner JL, Awazu K. Correlation between oxygen-deficient center concentration and KrF excimer laser induced defects in thermally annealed Ge-doped optical fiber preforms Journal of Non-Crystalline Solids. 246: 39-45. DOI: 10.1016/S0022-3093(99)00084-8 |
0.72 |
|
| 1998 |
Yip RY-, Desjardins P, Isnard L, Aı̈t-Ouali A, Bensaada A, Marchand H, Brebner JL, Currie JF, Masut RA. Band alignment and barrier height considerations for the quantum-confined Stark effect Journal of Vacuum Science and Technology. 16: 801-804. DOI: 10.1116/1.581061 |
0.399 |
|
| 1998 |
Aı̈t-Ouali A, Chennouf A, Yip RY-, Brebner JL, Leonelli R, Masut RA. Localization of excitons by potential fluctuations and its effect on the Stokes shift in InGaP/InP quantum confined heterostructures Journal of Applied Physics. 84: 5639-5642. DOI: 10.1063/1.368822 |
0.41 |
|
| 1998 |
Essid M, Brebner JL, Albert J, Awazu K. Difference in the behavior of oxygen deficient defects in Ge-doped silica optical fiber preforms under ArF and KrF excimer laser irradiation Journal of Applied Physics. 84: 4193-4197. DOI: 10.1063/1.368635 |
0.703 |
|
| 1998 |
Aı̈t-Ouali A, Yip RY-, Brebner JL, Masut RA. Strain Relaxation And Exciton Localization Effects On The Stokes Shift In Inasxp1-X/Inp Multiple Quantum Wells Journal of Applied Physics. 83: 3153-3160. DOI: 10.1063/1.367129 |
0.392 |
|
| 1998 |
Yip RY, Desjardins P, Isnard L, Aït-Ouali A, Marchand H, Brebner JL, Currie JF, Masut RA. Band alignment engineering for high speed, low drive field quantum-confined Stark effect devices Journal of Applied Physics. 83: 1758-1769. DOI: 10.1063/1.366896 |
0.319 |
|
| 1998 |
Essid M, Brebner JL, Albert J, Awazu K. Ion implantation induced photosensitivity in Ge-doped silica: Effect of induced defects on refractive index changes Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 141: 616-619. DOI: 10.1016/S0168-583X(98)00163-3 |
0.731 |
|
| 1997 |
Allard LB, Albert J, Brebner JL, Atkins GR. Photoinduced optical absorption and 400-nm luminescence in low-germanium-content optical f iber preforms irradiated with ArF and KrF excimer-laser light. Optics Letters. 22: 819-21. PMID 18185673 DOI: 10.1364/Ol.22.000819 |
0.455 |
|
| 1997 |
Awazu K, Roorda S, Brebner JL. Metastable Amorphous SiO2 created by Ion Bombardment Mrs Proceedings. 504. DOI: 10.1557/Proc-504-21 |
0.397 |
|
| 1997 |
Yip RY, Aït-Ouali A, Bensaada A, Desjardins P, Beaudoin M, Isnard L, Brebner JL, Currie JF, Masut RA. Strain and relaxation effects in InAsP/InP multiple quantum well optical modulator devices grown by metal-organic vapor phase epitaxy Journal of Applied Physics. 81: 1905-1915. DOI: 10.1063/1.365549 |
0.384 |
|
| 1997 |
Knights AP, Allard LB, Brebner JL, Simpson PJ. Annealing Of Defects Induced By Ge Irradiation Of Silica Probed With Variable Energy Positrons Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 127: 86-89. DOI: 10.1016/S0168-583X(96)00857-9 |
0.457 |
|
| 1996 |
Knights AP, Simpson PJ, Allard LB, Brebner JL, Albert J. Si ion implantation‐induced damage in fused silica probed by variable‐energy positrons Journal of Applied Physics. 79: 9022-9028. DOI: 10.1063/1.362579 |
0.454 |
|
| 1996 |
Gagnon G, Currie JF, Brebner JL, Darwall T. Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing Journal of Applied Physics. 79: 7612-7620. DOI: 10.1063/1.362418 |
0.322 |
|
| 1996 |
Verhaegen M, Brebner JL, Allard LB, Albert J. Ion implantation‐induced strong photosensitivity in high‐purity fused silica: Correlation of index changes with VUV color centers Applied Physics Letters. 68: 3084-3086. DOI: 10.1063/1.116430 |
0.53 |
|
| 1995 |
Verhaegen M, Allard L, Brebner J, Essid M, Roorda S, Albert J. Photorefractive waveguides produced by ion-implantation of fused silica Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 106: 438-441. DOI: 10.1016/0168-583X(95)00748-2 |
0.721 |
|
| 1994 |
Zhao Y‐, Masut RA, Brebner JL, Tran CA, Graham JT. Temperature dependence of photoluminescence in InAsP/InP strained multiple quantum wells Journal of Applied Physics. 76: 5921-5926. DOI: 10.1063/1.358481 |
0.338 |
|
| 1994 |
Gagnon G, Currie JF, Béïque G, Brebner JL, Gujrathi SC, Ouellet L. Characterization of reactively evaporated TiN layers for diffusion barrier applications Journal of Applied Physics. 75: 1565-1570. DOI: 10.1063/1.356392 |
0.302 |
|
| 1994 |
Watkins SP, Arès R, Masut RA, Tran CA, Brebner JL. Strain effects in high‐purity InP epilayers grown on slightly mismatched substrates Journal of Applied Physics. 75: 2460-2465. DOI: 10.1063/1.356271 |
0.306 |
|
| 1994 |
Tran CA, Masut RA, Brebner JL, Jouanne M. Atomic layer epitaxy and structural characterization of InP and InAs/InP heterostructures Journal of Applied Physics. 75: 2398-2405. DOI: 10.1063/1.356261 |
0.351 |
|
| 1994 |
Xing QJ, Brebner JL, Masut RA, Ahmad G, Zhao G, Tran CA, Isnard L. Strained InAs/InP quantum well heterostructure lasers grown by low‐pressure metalorganic chemical vapor deposition Applied Physics Letters. 65: 567-569. DOI: 10.1063/1.112297 |
0.338 |
|
| 1994 |
Bensaada A, Graham JT, Brebner JL, Chennouf A, Cochrane RW, Leonelli R, Masut RA. Band alignment in GaxIn1−xP/InP heterostructures Applied Physics Letters. 64: 273-275. DOI: 10.1063/1.111178 |
0.402 |
|
| 1994 |
Arès R, Trudeau YB, Brebner JL, Kajrys GE, Jouanne M. Determination by Raman scattering of the in depth damage profile in high energy ion implantation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 90: 419-423. DOI: 10.1016/0168-583X(94)95585-9 |
0.446 |
|
| 1994 |
Tran CA, Graham JT, Brebner JL, Masut RA. Interfaces of InAs/InP multiple quantum wells grown by metalorganic vapor phase epitaxy Journal of Electronic Materials. 23: 1291-1296. DOI: 10.1007/Bf02649893 |
0.345 |
|
| 1993 |
Albert J, Malo B, Johnson DC, Bilodeau F, Hill KO, Brebner JL, Kajrys G. Dichroism in the absorption spectrum of photobleached ion-implanted silica. Optics Letters. 18: 1126. PMID 19823309 DOI: 10.1364/Ol.18.001126 |
0.449 |
|
| 1993 |
Tran CA, Graham JT, Masut RA, Brebner JL. The Effect of Growth Interruption on Structural and Optical Properties of InAsP/InP Multiple Quantum Wells Mrs Proceedings. 326: 115. DOI: 10.1557/Proc-326-115 |
0.339 |
|
| 1993 |
Zhao Y‐, Brebner JL, Masut RA, Zhao G, Bensaada A, Wan JZ. Alloy composition dependence of defect energy levels in GaxIn1−xP/InP:Fe and GaxIn1−xP/InP:S (x≤0.24) Journal of Applied Physics. 74: 1862-1867. DOI: 10.1063/1.354794 |
0.313 |
|
| 1993 |
Tran CA, Jouanne M, Brebner JL, Masut RA. Effect of strain on confined optic phonons of highly strained InAs/InP superlattices Journal of Applied Physics. 74: 4983-4989. DOI: 10.1063/1.354303 |
0.301 |
|
| 1993 |
Albert J, Hill KO, Malo B, Johnson DC, Bilodeau F, Templeton IM, Brebner JL. Maskless writing of submicrometer gratings in fused silica by focused ion beam implantation and differential wet etching Applied Physics Letters. 63: 2309-2311. DOI: 10.1063/1.110509 |
0.436 |
|
| 1993 |
Tran CA, Masut RA, Brebner JL, Leonelli R. High‐resolution x‐ray diffraction to determine the self‐limiting growth in atomic layer epitaxy of InP and InAs/InP heterostructures Applied Physics Letters. 62: 2375-2377. DOI: 10.1063/1.109369 |
0.316 |
|
| 1993 |
Trudeau YB, Arès R, Kajrys GE, Gagnon G, Brebner JL, Jouanne M. Structural and optical characterization of implanted and annealed semi-insulating GaAs Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 80: 706-710. DOI: 10.1016/0168-583X(93)96214-W |
0.481 |
|
| 1992 |
Albert J, Malo B, Hill KO, Johnson DC, Brebner JL, Leonelli R. Refractive-index changes in fused silica produced by heavy-ion implantation followed by photobleaching. Optics Letters. 17: 1652-4. PMID 19798273 DOI: 10.1364/Ol.17.001652 |
0.491 |
|
| 1992 |
Wan JZ, Brebner JL, Leonelli R, Graham JT. Optical properties of excitons in GaTe. Physical Review. B, Condensed Matter. 46: 1468-1471. PMID 10003788 DOI: 10.1103/Physrevb.46.1468 |
0.303 |
|
| 1992 |
Albert J, Hill KO, Malo B, Johnson DC, Brebner JL, Trudeau YB, Kajrys G. Formation and bleaching of strong ultraviolet absorption bands in germanium implanted synthetic fused silica Applied Physics Letters. 60: 148-150. DOI: 10.1063/1.106998 |
0.529 |
|
| 1991 |
Trudeau YB, Kajrys GE, Gagnon G, Brebner JL. Damage induced in GaAs by high-energy Be, Si and Se implantation Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 59: 609-613. DOI: 10.1016/0168-583X(91)95287-N |
0.463 |
|
| 1990 |
Diawara Y, Currie JF, Najafi SI, Brebner JL. Détecteur photovoltaïque au silicium amorphe Canadian Journal of Physics. 68: 317-320. DOI: 10.1139/P90-050 |
0.331 |
|
| 1988 |
Janicki C, Hinrichsen PF, Gujrathi SC, Brebner J, Martin J-. An ERD/RBS/PIXE apparatus for surface analysis and channeling Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 34: 483-492. DOI: 10.1016/0168-583X(88)90155-3 |
0.32 |
|
| 1987 |
Barclay RP, Sarr M, Brebner JL. Reversible metastable defect centres in amorphous arsenic triselenide Journal of Non-Crystalline Solids. 97: 687-690. DOI: 10.1016/0022-3093(87)90162-1 |
0.402 |
|
| 1987 |
Barclay RP, Brebner JL, Perluzzo G, Seynhaeve G. Effects of deep trapping and band bending on the transient photodecay in a-Si :H Journal of Non-Crystalline Solids. 603-606. DOI: 10.1016/0022-3093(87)90141-4 |
0.349 |
|
| 1985 |
Brebner JL, Cochrane RW, Groleau R, Gujrathi S, Kéroack D, Lépine Y, Martin J, Vanaček M, Aktik C, Aktik M, Azelmad A, Currie JF, Poulin-Dandurand S, Ranchoux B, Sacher E, et al. Progress in amorphous-silicon photovoltaic-device research Canadian Journal of Physics. 63: 786-797. DOI: 10.1139/P85-127 |
0.36 |
|
| 1984 |
Keroack D, Lepine Y, Brebner JL. Drift mobility measurements of small-polaron transport in SrTiO3 Journal of Physics C: Solid State Physics. 17: 833-842. DOI: 10.1088/0022-3719/17/5/013 |
0.301 |
|
| 1983 |
Aktik C, Aktik M, Bruyere JC, Currie JF, Poulin S, Yelon A, Brebner JL, Cochrane RW, Groleau R, Lu H. A novel doping procedure for a-Si:H Journal of Non-Crystalline Solids. 59: 309-312. DOI: 10.1016/0022-3093(83)90583-5 |
0.365 |
|
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