| Year |
Citation |
Score |
| 2006 |
Giguère A, Beerens J, Terreault B. Creating nanostructures on silicon using ion blistering and electron beam lithography Nanotechnology. 17: 600-606. DOI: 10.1088/0957-4484/17/2/043 |
0.307 |
|
| 2005 |
Salem B, Morris D, Aimez V, Beerens J, Beauvais J, Houde D. Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates Journal of Physics Condensed Matter. 17: 7327-7333. DOI: 10.1088/0953-8984/17/46/016 |
0.308 |
|
| 2004 |
Barba D, Aimez V, Beauvais J, Beerens J, Drouin D, Chicoine M, Schiettekatte F. Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs Journal of Applied Physics. 96: 4890-4893. DOI: 10.1063/1.1803615 |
0.322 |
|
| 2003 |
Ng SL, Djie HS, Lim HS, Lam YL, Chan YC, Dowd P, Ooi BS, Aimez V, Beauvais J, Beerens J. Impact of quantum well intermixing on polarization anisotropy of InGaAs/InGaAsP quantum well modulators Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1482. DOI: 10.1116/1.1591738 |
0.345 |
|
| 2003 |
Ng S, Djie H, Lim H, Lam Y, Chan Y, Ooi B, Aimez V, Beauvais J, Beerens J. Fabrication of wide-band electro-absorption waveguide modulator arrays using quantum well-intermixing process Optics Communications. 226: 191-197. DOI: 10.1016/J.Optcom.2003.08.016 |
0.348 |
|
| 2002 |
Ng SL, Lim HS, Lam YL, Chan YC, Ooi BS, Aimez V, Beauvais J, Beerens J. Generation of Multiple Energy Bandgaps Using a Gray Mask Process and Quantum Well Intermixing Japanese Journal of Applied Physics. 41: 1080-1084. DOI: 10.1143/Jjap.41.1080 |
0.322 |
|
| 2002 |
Ménard S, Beerens J, Morris D, Aimez V, Beauvais J, Fafard S. Magneto–photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 1501. DOI: 10.1116/1.1495504 |
0.388 |
|
| 2002 |
Aimez V, Beauvais J, Beerens J, Morris D, Lim HS, Ooi B. Low-energy ion-implantation-induced quantum-well intermixing Ieee Journal of Selected Topics in Quantum Electronics. 8: 870-879. DOI: 10.1109/Jstqe.2002.800846 |
0.363 |
|
| 2002 |
Lim H, Aimez V, Ooi B, Beauvais J, Beerens J. A novel fabrication technique for multiple-wavelength photonic-integrated devices in InGaAs-InGaAsP laser heterostructures Ieee Photonics Technology Letters. 14: 594-596. DOI: 10.1109/68.998695 |
0.336 |
|
| 2002 |
Ng SL, Lim HS, Lam YL, Chan YC, Ooi BS, Aimez V, Beauvais J, Beerens J. Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process Applied Physics Letters. 81: 1958-1960. DOI: 10.1063/1.1508159 |
0.363 |
|
| 2002 |
Ng S, Lim H, Lam Y, Chan Y, Ooi B, Aimez V, Beauvais J, Beerens J. Polarisation insensitive InGaAs∕InGaAsP electro-absorption intensity modulator using quantum well intermixing process Electronics Letters. 38: 241. DOI: 10.1049/El:20020151 |
0.382 |
|
| 2002 |
Lahkak N, Drouin D, Beerens J, Magny P, Lefebvre J. Study of self-assembled InAs quantum dots on InP nano-templates by low voltage scanning electron microscopy cathodoluminescence Microscopy and Microanalysis. 8: 712-713. DOI: 10.1017/S1431927602106192 |
0.325 |
|
| 2001 |
Aimez V, Beauvais J, Beerens J, Ng SL, Ooi BS. Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures Applied Physics Letters. 79: 3582-3584. DOI: 10.1063/1.1421234 |
0.329 |
|
| 2000 |
Charlebois S, Beerens J, Côté R, Lavallée E, Beauvais J, Wasilewski ZR. Temperature dependence of the resistance resonance in weakly coupled quantum wells Physica E-Low-Dimensional Systems & Nanostructures. 6: 645-649. DOI: 10.1016/S1386-9477(99)00140-X |
0.583 |
|
| 1998 |
Lefebvre J, Beerens J, Feng Y, Wasilewski Z, Beauvais J, Lavallée E. Electrical transport and far-infrared transmission in a quantum wire array Journal of Vacuum Science & Technology B. 16: 2915-2927. DOI: 10.1116/1.590368 |
0.354 |
|
| 1998 |
Lefebvre J, Beerens J, Feng Y, Wasilewski Z, Beauvais J, Lavallée E. Far-infrared transmission study of Bernstein modes in a two-dimensional electron gas with a tunable lateral modulation Journal of Vacuum Science and Technology. 16: 821-824. DOI: 10.1116/1.581065 |
0.363 |
|
| 1998 |
Paquette M, Aimez V, Beauvais J, Beerens J, Poole PJ, Charbonneau S, Roth AP. Blueshifting of InGaAsP-InP laser diodes using a low-energy ion-implantation technique: Comparison between strained and lattice-matched quantum-well structures Ieee Journal On Selected Topics in Quantum Electronics. 4: 741-745. DOI: 10.1109/2944.720487 |
0.363 |
|
| 1998 |
Lefebvre J, Beerens J, Feng Y, Wasilewski Z, Beauvais J, Lavallée E. Bernstein modes in a laterally modulated two-dimensional electron gas Semiconductor Science and Technology. 13: 169-173. DOI: 10.1088/0268-1242/13/2/002 |
0.377 |
|
| 1997 |
Paquette M, Beauvais J, Beerens J, Poole PJ, Charbonneau S, Miner CJ, Blaauw C. Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation Applied Physics Letters. 71: 3749-3751. DOI: 10.1063/1.120407 |
0.338 |
|
| 1996 |
Charlebois S, Beerens J, Miner CJ, Puetz N. Spin resonance in In0.53Ga0.47As under hydrostatic pressure. Physical Review. B, Condensed Matter. 54: 13456-13459. PMID 9985246 |
0.554 |
|
| 1993 |
Lefebvre J, Beerens J, Bourbonnais C, Caron LG, Lenoir C, Batail P. Far infrared photoconductivity of (TMTSF)2ClO4 in magnetic field Synthetic Metals. 56: 1827-1831. DOI: 10.1016/0379-6779(93)90333-R |
0.314 |
|
| 1989 |
Beerens J, Bernier G, Jandl S, Boeck JD, Deneffe K. Photoluminescence of GaAs/Si under hydrostatic pressure Semiconductor Science and Technology. 4: 1156-1158. DOI: 10.1088/0268-1242/4/12/018 |
0.318 |
|
| 1989 |
Bernier G, Beerens J, Boeck JD, Deneffe K, Hoof Cv, Borghs G. Photoconductivity and photoluminescence of GaAs grown on Si by molecular beam epitaxy Solid State Communications. 69: 727-731. DOI: 10.1016/0038-1098(89)90819-3 |
0.317 |
|
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