| Year |
Citation |
Score |
| 2016 |
Hu B, Moges K, Honda Y, Liu HX, Uemura T, Yamamoto M, Inoue JI, Shirai M. Temperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic C o2MnSi electrodes Physical Review B - Condensed Matter and Materials Physics. 94. DOI: 10.1103/Physrevb.94.094428 |
0.32 |
|
| 2016 |
Moges K, Honda Y, Liu H, Uemura T, Yamamoto M, Miura Y, Shirai M. Enhanced half-metallicity of off-stoichiometric quaternary Heusler alloy Co-2(Mn, Fe)Si investigated through saturation magnetization and tunneling magnetoresistance Physical Review B. 93. DOI: 10.1103/Physrevb.93.134403 |
0.313 |
|
| 2016 |
Fetzer R, Liu HX, Stadtmüller B, Uemura T, Yamamoto M, Aeschlimann M, Cinchetti M. Impact of CoFe buffer layers on the structural and electronic properties of the Co2MnSi/MgO interface Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/19/195002 |
0.339 |
|
| 2015 |
Fetzer R, Ouardi S, Honda Y, Liu HX, Chadov S, Balke B, Ueda S, Suzuki M, Uemura T, Yamamoto M, Aeschlimann M, Cinchetti M, Fecher GH, Felser C. Spin-resolved low-energy and hard x-ray photoelectron spectroscopy of off-stoichiometric Co2MnSi Heusler thin films exhibiting a record TMR Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/16/164002 |
0.327 |
|
| 2015 |
Liu H, Kawami T, Moges K, Uemura T, Yamamoto M, Shi F, Voyles PM. Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions Journal of Physics D: Applied Physics. 48: 164001. DOI: 10.1088/0022-3727/48/16/164001 |
0.307 |
|
| 2014 |
Li G, Honda Y, Liu H, Matsuda K, Arita M, Uemura T, Yamamoto M, Miura Y, Shirai M, Saito T, Shi F, Voyles PM. Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratio Physical Review B. 89. DOI: 10.1103/Physrevb.89.014428 |
0.304 |
|
| 2014 |
Ebina Y, Akiho T, Liu H, Yamamoto M, Uemura T. Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties Applied Physics Letters. 104: 172405. DOI: 10.1063/1.4873720 |
0.309 |
|
| 2013 |
Akiho T, Shan J, Liu H, Matsuda K, Yamamoto M, Uemura T. Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source Physical Review B. 87: 235205. DOI: 10.1103/Physrevb.87.235205 |
0.301 |
|
| 2012 |
Honda Y, Liu H, Matsuda K, Uemura T, Yamamoto M. Temperature dependence of spin-dependent tunneling resistances of MgO-buffered Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.K-6-4 |
0.324 |
|
| 2012 |
Liu H, Honda Y, Matsuda K, Arita M, Uemura T, Yamamoto M. Highly Spin-Polarized Tunneling in Epitaxial Magnetic Tunnel Junctions with a Co2MnSi Electrode and a MgO Barrier with Improved Interfacial Structural Properties Japanese Journal of Applied Physics. 51: 93004. DOI: 10.1143/Jjap.51.093004 |
0.36 |
|
| 2012 |
Li G, Taira T, Liu H, Matsuda K, Uemura T, Yamamoto M. Fabrication of Fully Epitaxial CoFe/MgO/CoFe Magnetic Tunnel Junctions on Ge(001) Substrates via a MgO Interlayer Japanese Journal of Applied Physics. 51: 93003. DOI: 10.1143/Jjap.51.093003 |
0.348 |
|
| 2012 |
Liu H, Honda Y, Taira T, Matsuda K, Arita M, Uemura T, Yamamoto M. Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling Applied Physics Letters. 101: 132418. DOI: 10.1063/1.4755773 |
0.347 |
|
| 2009 |
Ishikawa T, Liu H, Taira T, Matsuda K, Uemura T, Yamamoto M. Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions Applied Physics Letters. 95: 232512. DOI: 10.1063/1.3272926 |
0.315 |
|
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