Minhao Liu - Publications

Affiliations: 
2013-2016 Physics Princeton University, Princeton, NJ 

16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Wang W, Kim S, Liu M, Cevallos FA, Cava RJ, Ong NP. Evidence for an edge supercurrent in the Weyl superconductor MoTe. Science (New York, N.Y.). 368: 534-537. PMID 32355033 DOI: 10.1126/Science.Aaw9270  0.541
2018 Liang T, Lin J, Gibson Q, Kushwaha S, Liu M, Wang W, Xiong H, Sobota JA, Hashimoto M, Kirchmann PS, Shen Z, Cava RJ, Ong NP. Anomalous Hall effect in ZrTe5 Nature Physics. 14: 451-455. DOI: 10.1038/S41567-018-0078-Z  0.652
2017 Liang T, Lin J, Gibson Q, Gao T, Hirschberger M, Liu M, Cava RJ, Ong NP. Anomalous Nernst Effect in the Dirac Semimetal Cd_{3}As_{2}. Physical Review Letters. 118: 136601. PMID 28409962 DOI: 10.1103/Physrevlett.118.136601  0.677
2016 Liu M, Wang W, Richardella AR, Kandala A, Li J, Yazdani A, Samarth N, Ong NP. Large discrete jumps observed in the transition between Chern states in a ferromagnetic topological insulator. Science Advances. 2: e1600167. PMID 27482539 DOI: 10.1126/Sciadv.1600167  0.615
2016 Xie W, Liu M, Wang Z, Ong NP, Cava RJ. Composite Icosahedron/Cube Endohedral Clusters in Rh2Cd15. Inorganic Chemistry. 55: 7605-9. PMID 27442710 DOI: 10.1021/Acs.Inorgchem.6B01000  0.494
2016 Chang CZ, Liu MH, Zhang ZC, Wang YY, He K, Xue QK. Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films Science China: Physics, Mechanics and Astronomy. 59: 1-5. DOI: 10.1007/S11433-015-5761-9  0.639
2015 Liang T, Gibson Q, Ali MN, Liu M, Cava RJ, Ong NP. Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2. Nature Materials. 14: 280-4. PMID 25419815 DOI: 10.1038/Nmat4143  0.69
2013 Chang CZ, Zhang J, Liu M, Zhang Z, Feng X, Li K, Wang LL, Chen X, Dai X, Fang Z, Qi XL, Zhang SC, Wang Y, He K, Ma XC, et al. Thin films of magnetically doped topological insulator with carrier-independent long-range ferromagnetic order. Advanced Materials (Deerfield Beach, Fla.). 25: 1065-70. PMID 23334936 DOI: 10.1002/Adma.201203493  0.64
2013 Zhao W, Wang Q, Liu M, Zhang W, Wang Y, Chen M, Guo Y, He K, Chen X, Wang Y, Wang J, Xie X, Niu Q, Wang L, Ma X, et al. Evidence for Berezinskii–Kosterlitz–Thouless transition in atomically flat two-dimensional Pb superconducting films Solid State Communications. 165: 59-63. DOI: 10.1016/J.Ssc.2013.04.025  0.578
2012 Liu M, Zhang J, Chang CZ, Zhang Z, Feng X, Li K, He K, Wang LL, Chen X, Dai X, Fang Z, Xue QK, Ma X, Wang Y. Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator. Physical Review Letters. 108: 036805. PMID 22400773 DOI: 10.1103/Physrevlett.108.036805  0.646
2012 Liu M, Wang Y. Electron interaction and localization in ultrathin topological insulator films Science China Physics, Mechanics and Astronomy. 55: 2213-2225. DOI: 10.1007/S11433-012-4941-0  0.641
2011 Zhang J, Chang CZ, Zhang Z, Wen J, Feng X, Li K, Liu M, He K, Wang L, Chen X, Xue QK, Ma X, Wang Y. Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators. Nature Communications. 2: 574. PMID 22146393 DOI: 10.1038/Ncomms1588  0.549
2011 Zhang C, Fu L, Liu N, Liu M, Wang Y, Liu Z. Synthesis of nitrogen-doped graphene using embedded carbon and nitrogen sources. Advanced Materials (Deerfield Beach, Fla.). 23: 1020-4. PMID 21341318 DOI: 10.1002/Adma.201004110  0.461
2011 CHANG C, HE K, WANG L, MA X, LIU M, ZHANG Z, CHEN X, WANG Y, XUE Q. GROWTH OF QUANTUM WELL FILMS OF TOPOLOGICAL INSULATOR Bi2Se3 ON INSULATING SUBSTRATE Spin. 1: 21-25. DOI: 10.1142/S2010324711000033  0.598
2011 Liu M, Chang CZ, Zhang Z, Zhang Y, Ruan W, He K, Wang LL, Chen X, Jia JF, Zhang SC, Xue QK, Ma X, Wang Y. Electron interaction-driven insulating ground state in Bi 2Se3 topological insulators in the two-dimensional limit Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.165440  0.636
2010 Li YY, Wang G, Zhu XG, Liu MH, Ye C, Chen X, Wang YY, He K, Wang LL, Ma XC, Zhang HJ, Dai X, Fang Z, Xie XC, Liu Y, et al. Intrinsic topological insulator Bi2Te3 thin films on Si and their thickness limit. Advanced Materials (Deerfield Beach, Fla.). 22: 4002-7. PMID 20648518 DOI: 10.1002/Adma.201000368  0.554
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