Year |
Citation |
Score |
2010 |
Dussaigne A, Gonschorek M, Malinverni M, Py MA, Martin D, Mouti A, Stadelmann P, Grandjean N. High-mobility AlGaN/GaN two-dimensional electron gas heterostructure grown on (111) single crystal diamond substrate Japanese Journal of Applied Physics. 49: 0610011-0610014. DOI: 10.1143/Jjap.49.061001 |
0.335 |
|
2007 |
Bechelany M, Bernard S, Brioude A, Cornu D, Stadelmann P, Charcosset C, Fiaty K, Miele P. Synthesis of boron nitride nanotubes by a template-assisted polymer thermolysis process Journal of Physical Chemistry C. 111: 13378-13384. DOI: 10.1021/Jp074178K |
0.326 |
|
2004 |
Grade?ak S, Stadelmann P, Wagner V, Ilegems M. Bending of dislocations in GaN during epitaxial lateral overgrowth Applied Physics Letters. 85: 4648-4650. DOI: 10.1063/1.1823593 |
0.326 |
|
2002 |
Gradecak S, Wagner V, Ilegems M, Bobard F, Stadelmann P. Microstructure of ELO-GaN layers grown by hydride vapor phase epitaxy Materials Research Society Symposium - Proceedings. 693: 123-128. DOI: 10.1557/Proc-693-I3.23.1 |
0.335 |
|
2002 |
Wagner V, Parillaud O, Bühlmann HJ, Ilegems M, Gradecak S, Stadelmann P, Riemann T, Christen J. Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy Journal of Applied Physics. 92: 1307-1316. DOI: 10.1063/1.1489711 |
0.316 |
|
2002 |
Grade?ak S, Wagner V, Ilegems M, Riemann T, Christen J, Stadelmann P. Microscopic evidence of point defect incorporation in laterally overgrown GaN Applied Physics Letters. 80: 2866-2868. DOI: 10.1063/1.1470696 |
0.344 |
|
2002 |
Stöckli T, Bonard JM, Chatelain A, Wang ZL, Stadelmann P. Valence excitations in individual single-wall carbon nanotubes Applied Physics Letters. 80: 2982-2984. DOI: 10.1063/1.1469685 |
0.362 |
|
2001 |
Stöckli T, Bonard JM, Châtelain A, Wang ZL, Stadelmann P. Collective oscillations in a single-wall carbon nanotube excited by fast electrons Physical Review B - Condensed Matter and Materials Physics. 64: 1154241-11542410. DOI: 10.1103/Physrevb.64.115424 |
0.363 |
|
2000 |
Stöckli T, Bonard JM, Châtelain A, Wang ZL, Stadelmann P. Plasmon excitations in graphitic carbon spheres measured by EELS Physical Review B - Condensed Matter and Materials Physics. 61: 5751-5759. DOI: 10.1103/Physrevb.61.5751 |
0.35 |
|
1999 |
Stöckli T, Wang ZL, Bonard JM, Stadelmann P, Châtelain A. Plasmon excitations in carbon nanotubes Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 79: 1531-1548. DOI: 10.1080/014186399256385 |
0.336 |
|
1999 |
Beeli C, Doudin B, Ansermet JP, Stadelmann P. Off-axis electron holography of single ferromagnetic nanowires Materials Characterization. 42: 175-182. DOI: 10.1016/S1044-5803(99)00012-1 |
0.347 |
|
1998 |
Stöckli T, Bonard J, Châtelain A, Wang ZL, Stadelmann P. Plasmon excitations in graphitic carbon spheres Physical Review B. 57: 15599-15612. DOI: 10.1103/Physrevb.57.15599 |
0.383 |
|
1996 |
Beeli C, Doudin B, Ansermet JP, Stadelmann P. Study of Co, Ni and Co/Cu nanowires: Magnetic flux imaging by off-axis electron holography Journal of Magnetism and Magnetic Materials. 164: 77-90. DOI: 10.1016/S0304-8853(96)00399-X |
0.304 |
|
1991 |
Bonnet R, Loubradou M, Catana A, Stadelmann P. Electron microscopy of transformation dislocations at interphase boundaries Metallurgical Transactions A. 22: 1145-1158. DOI: 10.1007/Bf02660646 |
0.353 |
|
1990 |
Catana A, Schmid PE, Heintze M, Lévy F, Stadelmann P, Bonnet R. Atomic scale study of local TiSi2/Si epitaxies Journal of Applied Physics. 67: 1820-1825. DOI: 10.1063/1.345609 |
0.335 |
|
1990 |
Cosandey F, Chan SW, Stadelmann P. Atomic structure and energy of ∑ = 5 tilt boundaries in gold Metallurgical Transactions A. 21: 2299-2307. DOI: 10.1007/Bf02646976 |
0.318 |
|
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