| Year |
Citation |
Score |
| 2020 |
Srivastava GP, Thomas IO. Tunable Thermal Transport Characteristics of Nanocomposites. Nanomaterials (Basel, Switzerland). 10. PMID 32260079 DOI: 10.3390/Nano10040673 |
0.359 |
|
| 2020 |
Tayran C, Çakmak M, Srivastava GP. Atomic and electronic structures of Sn covered W(110) surface European Physical Journal B. 93: 1-7. DOI: 10.1140/Epjb/E2019-100397-1 |
0.439 |
|
| 2020 |
Uzunok HY, Tütüncü HM, Karaca E, Srivastava GP. The effect of spin–orbit interaction on superconductivity in the filled skutterudites MPt4Ge12(M=Ba, Sr and Th) Philosophical Magazine. 1-24. DOI: 10.1080/14786435.2020.1774934 |
0.336 |
|
| 2020 |
Saib S, Karaca E, Uzunok HY, Tütüncü HM, Srivastava GP. Probing the electron–phonon interaction in superconductivity for KSn2 using the Migdal-Eliashberg theory and linear-response theory Philosophical Magazine Letters. 100: 33-54. DOI: 10.1080/09500839.2020.1712485 |
0.321 |
|
| 2020 |
Thomas IO, Srivastava GP. Effect of interface density, quality and period on the lattice thermal conductivity of nanocomposite materials Journal of Applied Physics. 127: 24304. DOI: 10.1063/1.5099539 |
0.335 |
|
| 2020 |
Tayran C, Çakmak M, Srivastava GP. Adsorption of S on Si(111) with M4 × 4 superstructure Surface Science. 701: 121694. DOI: 10.1016/J.Susc.2020.121694 |
0.421 |
|
| 2020 |
Tayran C, Çakmak M, Srivastava GP. Quantum-well states for uniform Ag layers on the Ga-induced Si(111)–(3×3)R30° surface Surface Science. 701: 121684. DOI: 10.1016/J.Susc.2020.121684 |
0.434 |
|
| 2020 |
Tütüncü HM, Karaca E, Uzunok HY, Baǧcı S, Srivastava GP. A first-principles investigation of physical properties and superconductivity of NbPS Solid State Sciences. 103: 106183. DOI: 10.1016/J.Solidstatesciences.2020.106183 |
0.435 |
|
| 2020 |
Uzunok HY, Zafer T, Tütüncü HM, Karaca E, Bagˇcı S, Srivastava GP. Probing physical properties and superconductivity of noncentrosymmetric superconductors LaPtGe and LaPtGe3: A first-principles study Computational Materials Science. 185: 109949. DOI: 10.1016/J.Commatsci.2020.109949 |
0.336 |
|
| 2020 |
Schmidt TM, Srivastava GP. Electronic and topological properties of Sn1-xInxTe Computational Materials Science. 182: 109777. DOI: 10.1016/J.Commatsci.2020.109777 |
0.321 |
|
| 2019 |
Uzunok HY, Tütüncü HM, Srivastava GP, Başoǧlu A. Theoretical investigation of superconductivity in the non-centrosymmetric SrPtGe3 and CaPtSi3 compounds Philosophical Magazine. 99: 198-223. DOI: 10.1080/14786435.2018.1532123 |
0.422 |
|
| 2019 |
Uzunok HY, Tütüncü HM, Karaca E, Srivastava GP. Theoretical investigation of superconductivity mechanism in the filled skutterudites YRu4P12, YOs4P12, LaOs1P12 and LaOs4As12 Journal of Physics and Chemistry of Solids. 130: 197-209. DOI: 10.1016/J.Jpcs.2019.02.031 |
0.45 |
|
| 2019 |
Karaca E, Baǧcı S, Tütüncü HM, Uzunok HY, Srivastava GP. Theoretical investigation of electron-phonon interaction in the orthorhombic phase of Mo2C Journal of Alloys and Compounds. 788: 842-851. DOI: 10.1016/J.Jallcom.2019.02.243 |
0.437 |
|
| 2019 |
Uzunok HY, Tütüncü HM, Karaca E, Srivastava GP. Theoretical investigation of antisymmetric spin-orbit coupling effect on the physical properties of noncentrosymmetric BaPtSb superconductor Intermetallics. 108: 109-116. DOI: 10.1016/J.Intermet.2019.02.010 |
0.35 |
|
| 2019 |
Tütüncü HM, Uzunok HY, Karaca E, Baǧcı S, Srivastava GP. Ab initio investigation of spin orbit coupling effect on the physical properties of IrGe superconductor Intermetallics. 106: 107-114. DOI: 10.1016/J.Intermet.2018.12.017 |
0.416 |
|
| 2018 |
Thomas IO, Srivastava GP. Anisotropic Thermal Conduction in Transition Metal Dichalcogenide Nanocomposites with Rough Interfaces. Nanomaterials (Basel, Switzerland). 8. PMID 30558261 DOI: 10.3390/Nano8121054 |
0.37 |
|
| 2018 |
Srivastava GP, Thomas IO. Mode confinement, interface mass-smudging, and sample length effects on phonon transport in thin nanocomposite superlattices. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 30523937 DOI: 10.1088/1361-648X/Aaf4C4 |
0.355 |
|
| 2018 |
Uzunok HY, Tütüncü HM, Karaca E, Başoǧlu A, Srivastava GP. Ab initio investigation of electron-phonon interaction in LaSn3 and CaSn3 Philosophical Magazine Letters. 98: 375-391. DOI: 10.1080/09500839.2018.1554273 |
0.391 |
|
| 2018 |
Thomas IO, Srivastava GP. Control of thermal conductivity with species mass in transition-metal dichalcogenides Journal of Applied Physics. 123: 135703. DOI: 10.1063/1.5017034 |
0.302 |
|
| 2018 |
Tütüncü HM, Uzunok HY, Srivastava GP, Özdemir V, Uǧur G. The effect of martensitic phase transition from cubic to tetragonal on the physical properties of V3Si superconductor Intermetallics. 96: 25-32. DOI: 10.1016/J.Intermet.2018.02.010 |
0.401 |
|
| 2017 |
Thomas IO, Srivastava GP. Anharmonic, dimensionality and size effects in phonon transport. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 29120345 DOI: 10.1088/1361-648X/Aa995E |
0.381 |
|
| 2017 |
Tütüncü HM, Karaca E, Srivastava GP. Electron–phonon interaction and superconductivity in the borocarbide superconductor Philosophical Magazine. 97: 2669-2688. DOI: 10.1080/14786435.2017.1346395 |
0.422 |
|
| 2017 |
Karaca E, Arslan E, Tütüncü HM, Srivastava GP. Physical properties of the body-centred tetragonal Philosophical Magazine. 97: 1866-1883. DOI: 10.1080/14786435.2017.1320439 |
0.42 |
|
| 2017 |
Tütüncü HM, Karaca E, Srivastava GP. Electron–phonon interaction and superconductivity in the Philosophical Magazine. 97: 128-143. DOI: 10.1080/14786435.2016.1245881 |
0.397 |
|
| 2017 |
Uzunok HY, Tütüncü HM, Srivastava GP, İpsara E, Baṣoǧlu A. The effect of spin orbit interaction on the physical properties of LaTSi3 (T = Ir, Pd, and Rh): First-principles calculations Journal of Applied Physics. 121: 193904. DOI: 10.1063/1.4983770 |
0.427 |
|
| 2017 |
Uzunok HY, Tütüncü HM, Srivastava GP, Başoǧlu A. The influence of spin orbit interaction on phonons and superconductivity in the noncentrosymmetric superconductors LaPt 3 Si and LaPtSi 3 Intermetallics. 86: 1-10. DOI: 10.1016/J.Intermet.2017.03.004 |
0.377 |
|
| 2017 |
Saib S, Karaca E, Tütüncü HM, Srivastava GP. Electron-phonon interaction and superconductivity in the multiband superconductor β-Bi2Pd Intermetallics. 84: 136-141. DOI: 10.1016/J.Intermet.2017.01.009 |
0.398 |
|
| 2016 |
Karaca E, Tütüncü HM, Srivastava GP, Uur S. Electron-phonon superconductivity in the ternary phosphides BaM2 P2 (M=Ni,Rh,and Ir) Physical Review B - Condensed Matter and Materials Physics. 94. DOI: 10.1103/Physrevb.94.054507 |
0.421 |
|
| 2016 |
Karaca E, Tütüncü HM, Uzunok HY, Srivastava GP, Uçsur. Theoretical investigation of superconductivity in SrPd2Ge2, SrPd2As2, and CaPd2As2 Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.054506 |
0.409 |
|
| 2016 |
Al-Otaibi J, Srivastava GP. Size and dimensionality dependent phonon conductivity in nanocomposites Journal of Physics Condensed Matter. 28. DOI: 10.1088/0953-8984/28/14/145304 |
0.346 |
|
| 2016 |
Karaca E, Karadaǧ S, Tütüncü HM, Srivastava GP, Uǧur. First-principles investigation of superconductivity in the body-centred tetragonal LaRu2P2 Philosophical Magazine. 96: 2059-2073. DOI: 10.1080/14786435.2016.1192723 |
0.433 |
|
| 2016 |
Tütüncü HM, Karaca E, Srivastava GP. Theoretical investigation of superconductivity in ternary silicide NaAlSi with layered diamond-like structure Philosophical Magazine. 96: 1006-1019. DOI: 10.1080/14786435.2016.1154203 |
0.435 |
|
| 2016 |
Thomas IO, Srivastava GP. Lattice thermal conduction in ultra-thin nanocomposites Journal of Applied Physics. 119. DOI: 10.1063/1.4954678 |
0.388 |
|
| 2016 |
Tütüncü HM, Karaca E, Srivastava GP. Ab initio calculations of surface phonons of the hydrogen-terminated Si(110)-(1 × 1) surface Surface Science. 647: 17-25. DOI: 10.1016/J.Susc.2015.12.003 |
0.445 |
|
| 2016 |
Arslan E, Karaca E, Tütüncü HM, Başoglu A, Srivastava GP. Theoretical investigation of superconductivity in SrAuSi3 and SrAu2Si2 Journal of Physics and Chemistry of Solids. 95: 65-73. DOI: 10.1016/J.Jpcs.2016.04.001 |
0.43 |
|
| 2016 |
Uzunok HY, Ipsara E, Tütüncü HM, Srivastava GP, Başoglu A. The effect of spin orbit interaction for superconductivity in the noncentrosymmetric superconductor CaIrSi3 Journal of Alloys and Compounds. 681: 205-211. DOI: 10.1016/J.Jallcom.2016.04.245 |
0.425 |
|
| 2016 |
Tütüncü HM, Karaca E, Srivastava GP. Ab initio investigation of superconductivity in orthorhombic MgPtSi Journal of Alloys and Compounds. 673: 302-308. DOI: 10.1016/J.Jallcom.2016.02.196 |
0.409 |
|
| 2015 |
Tütüncü HM, Uzunok HY, Karaca E, Srivastava GP, Özer S, Uur A. Ab initio investigation of BCS-type superconductivity in LuNi2 B2 C -type superconductors Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.054510 |
0.397 |
|
| 2015 |
Al-Otaibi J, Srivastava GP. Three-phonon scattering processes and thermal conductivity in IV-chalocogenides Journal of Physics Condensed Matter. 27. DOI: 10.1088/0953-8984/27/33/335801 |
0.316 |
|
| 2015 |
Tütüncü HM, Srivastava GP. Ab initio investigation of superconductivity in noncentrosymmetric Ca 3Ir 4Ge4 Philosophical Magazine. 95: 2228-2239. DOI: 10.1080/14786435.2015.1057256 |
0.391 |
|
| 2015 |
Tütüncü HM, Srivastava GP. Electron-phonon interaction and superconductivity in hexagonal BaSn5 Philosophical Magazine. 95: 2128-2137. DOI: 10.1080/14786435.2015.1047809 |
0.399 |
|
| 2015 |
Tütüncü HM, Srivastava GP. A comparative ab initio study of superconductivity in the body centered tetragonal YC2 and LaC2 Journal of Applied Physics. 117. DOI: 10.1063/1.4918309 |
0.408 |
|
| 2015 |
Tütüncü HM, Srivastava GP. Ab initio investigation of surface phonons on the (001) surface of KCl Surface Science. 637: 101-105. DOI: 10.1016/J.Susc.2015.03.027 |
0.435 |
|
| 2015 |
Tütüncü HM, Srivastava GP. Electron-phonon interaction and superconductivity in SnAs with the sodium chloride crystal structure Solid State Communications. 221: 24-27. DOI: 10.1016/J.Ssc.2015.08.006 |
0.4 |
|
| 2015 |
Uzunok HY, Tütüncü HM, Özer S, Uʇur S, Srivastava GP. Identification of specific phonon contributions in BCS-type superconductivity of boride-carbide crystals with a layer-like structure Solid State Communications. 206: 1-5. DOI: 10.1016/J.Ssc.2015.01.010 |
0.367 |
|
| 2014 |
Al-Saigh R, Shalini A, Srivastava GP, Hicken RJ, Calarco R. Excitation and detection of coherent optical phonon modes in epitaxial cubic Ge2 Sb2Te5 thin films of different crystallographic orientation Hague Journal On the Rule of Law. 1661. DOI: 10.1557/Opl.2014.185 |
0.302 |
|
| 2014 |
Al-Otaibi J, Srivastava GP. A theoretical study of the thermoelectric transport coefficients of n-type PbTe Hague Journal On the Rule of Law. 1661. DOI: 10.1557/Opl.2014.183 |
0.359 |
|
| 2014 |
Tütüncü HM, Srivastava GP. Theoretical examination of electron-phonon interaction and superconductivity in the hexagonal pnictide SrPtAs Philosophical Magazine. 94: 2692-2704. DOI: 10.1080/14786435.2014.926039 |
0.435 |
|
| 2014 |
Al-Otaibi J, Srivastava GP. Anharmonic effects in the thermoelectric properties of PbTe Journal of Applied Physics. 116. DOI: 10.1063/1.4891201 |
0.375 |
|
| 2014 |
Tütüncü HM, Srivastava GP. Phonon anomalies and superconductivity in the Heusler compound YPd 2Sn Journal of Applied Physics. 116. DOI: 10.1063/1.4887355 |
0.421 |
|
| 2014 |
Tütüncü HM, Srivastava GP. Origin of superconductivity in layered centrosymmetric LaNiGa2 Applied Physics Letters. 104. DOI: 10.1063/1.4862329 |
0.395 |
|
| 2014 |
Tütüncü HM, Srivastava GP. Ground state, phonon spectrum, and superconducting properties of the cubic inverse perovskite CuNNi3 Physica C: Superconductivity and Its Applications. 507: 10-16. DOI: 10.1016/J.Physc.2014.09.010 |
0.368 |
|
| 2014 |
Baǧci S, Kamiş T, Tütüncü HM, Srivastava GP. Ab initio investigation of surface phonons on the (0 0 1) surface of ZrC Physica B: Condensed Matter. 434: 51-56. DOI: 10.1016/J.Physb.2013.10.047 |
0.486 |
|
| 2014 |
Baǧci S, Tütüncü HM, Duman S, Bulut E, Özacar M, Srivastava GP. Physical properties of the cubic spinel LiMn2O4 Journal of Physics and Chemistry of Solids. 75: 463-469. DOI: 10.1016/J.Jpcs.2013.12.005 |
0.421 |
|
| 2014 |
Usanmaz D, Srivastava GP. Ab initio investigation of the passivation effect of the acrylonitrile molecule on the Si(100)-(2 × 1) surface Chemical Physics. 439: 12-16. DOI: 10.1016/J.Chemphys.2014.05.002 |
0.459 |
|
| 2013 |
Shalini A, Liu Y, Al-Jarah UA, Srivastava GP, Wright CD, Katmis F, Braun W, Hicken RJ. Observation of T₂-like coherent optical phonons in epitaxial Ge₂Sb₂Te₅/GaSb(001) films. Scientific Reports. 3: 2965. PMID 24129388 DOI: 10.1038/Srep02965 |
0.325 |
|
| 2013 |
Yelgel C, Srivastava GP. Atomic and Electronic Structure of Multilayer Graphene on a Monolayer Hexagonal Boron Nitride Mrs Proceedings. 1549: 65-70. DOI: 10.1557/Opl.2013.710 |
0.337 |
|
| 2013 |
Thomas IO, Srivastava GP. Thinning down of thermal conductivity in ultrashort period superlattices Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.115207 |
0.357 |
|
| 2013 |
Thomas IO, Srivastava GP. Effects of atomic relaxation on phonon dispersion relations and thermal properties of ultrathin (Si)n(Ge)n[001] superlattices Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.085410 |
0.398 |
|
| 2013 |
Tütüncü HM, Srivastava GP. Electronic, vibrational, superconducting and thermodynamic properties of cubic antiperovskite ZnNNi 3 Philosophical Magazine. 93: 4469-4487. DOI: 10.1080/14786435.2013.830793 |
0.419 |
|
| 2013 |
Tütüncü HM, Srivastava GP. Theoretical examination of superconductivity in the cubic antiperovskite Cr3GaN under pressure Journal of Applied Physics. 114. DOI: 10.1063/1.4817072 |
0.344 |
|
| 2013 |
Usanmaz D, Srivastava GP. Progressive structural and electronic properties of nano-structured carbon atomic chains Journal of Applied Physics. 113. DOI: 10.1063/1.4805047 |
0.326 |
|
| 2013 |
Ceyda Yelgel O, Srivastava GP. Thermoelectric properties of p-type (Bi2Te3) x(Sb2Te3)1-x single crystals doped with 3 wt. % Te Journal of Applied Physics. 113. DOI: 10.1063/1.4792653 |
0.335 |
|
| 2012 |
Yelgel C, Srivastava GP, Miwa RH. Ab initio investigation of the electronic properties of graphene on InAs(111)A. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 485004. PMID 23100453 DOI: 10.1088/0953-8984/24/48/485004 |
0.371 |
|
| 2012 |
Tütüncü HM, Baǧcı S, Srivastava GP, Akbulut A. Electrons, phonons and superconductivity in rocksalt and tungsten-carbide phases of CrC Journal of Physics: Condensed Matter. 24: 455704-455704. PMID 23092975 DOI: 10.1088/0953-8984/24/45/455704 |
0.358 |
|
| 2012 |
Yelgel ÖC, Srivastava GP. A Detailed Theoretical Study of the Thermal Conductivity of Bi 2 (Te 0.85 Se 0.15 ) 3 Single Crystals Mrs Proceedings. 1404. DOI: 10.1557/Opl.2012.357 |
0.382 |
|
| 2012 |
Thomas IO, Srivastava GP. An Extensive Theoretical Study of the Phonon Conductivity and Thermoelectric Properties of SiGe Alloys Mrs Proceedings. 1404. DOI: 10.1557/Opl.2012.328 |
0.304 |
|
| 2012 |
Thomas IO, Srivastava GP. Detailed calculation of the thermoelectric figure of merit in ann-doped SiGe alloy Physical Review B. 86. DOI: 10.1103/Physrevb.86.045205 |
0.311 |
|
| 2012 |
Weymouth AJ, McLean AB, Miwa RH, Srivastava GP. Inhibiting molecular array formation on Si(111)-7×7 using site-selective Ge/Si exchange Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.155318 |
0.363 |
|
| 2012 |
Bağcı S, Tütüncü HM, Duman S, Srivastava GP. Surface phonons on the NbC(001) and TaC(001) surfaces Physical Review B. 85. DOI: 10.1103/Physrevb.85.085437 |
0.351 |
|
| 2012 |
Tütüncü HM, Srivastava GP. Phonons and superconductivity in the cubic perovskite Cr3RhN Journal of Applied Physics. 112: 93914. DOI: 10.1063/1.4764916 |
0.408 |
|
| 2012 |
Tütüncü HM, Bağcı S, Duman S, Küçükerdoğan E, Srivastava GP. First-principles study of electronic and dynamical properties of the TaC(001) surface☆☆ Diamond and Related Materials. 25: 19-23. DOI: 10.1016/J.Diamond.2012.02.006 |
0.488 |
|
| 2012 |
Yelgel C, Srivastava GP. Ab initio studies of electronic and optical properties of graphene and graphene–BN interface Applied Surface Science. 258: 8338-8342. DOI: 10.1016/J.Apsusc.2012.03.167 |
0.316 |
|
| 2012 |
Srivastava GP, AlZahrani AZ, Usanmaz D. Theoretical analysis of semiconductor surface passivation by adsorption of alkaline-earth metals and chalcogens Applied Surface Science. 258: 8377-8386. DOI: 10.1016/J.Apsusc.2012.03.166 |
0.386 |
|
| 2012 |
Usanmaz D, Srivastava GP. Atomic and electronic structure of rigid carbon atomic chains Physica Status Solidi (a). 209: 1738-1743. DOI: 10.1002/Pssa.201200018 |
0.33 |
|
| 2012 |
McLean AB, Weymouth AJ, Edge GJA, Miwa RH, Srivastava GP. Using steric constraints to template an organic array on Si(111)-7 × 7 Physica Status Solidi (a) Applications and Materials Science. 209: 647-652. DOI: 10.1002/Pssa.201100472 |
0.346 |
|
| 2011 |
Weymouth AJ, Miwa RH, Edge GJA, Srivastava GP, McLean AB. Templating an organic array with Si(111)-7×7 Chemical Communications. 47: 8031-8033. PMID 21666898 DOI: 10.1039/C1Cc12311D |
0.355 |
|
| 2011 |
Srivastava GP, Hepplestone SP. Theory of phonon conductivity of semiconductor superlattices Mrs Proceedings. 1347. DOI: 10.1557/Opl.2011.1312 |
0.309 |
|
| 2011 |
Weymouth AJ, Edge GJA, McLean AB, Miwa RH, Srivastava GP. Templating an organic layer with the Si(111)-7×7 surface reconstruction using steric constraints Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.165308 |
0.375 |
|
| 2011 |
Hepplestone SP, Srivastava GP. Lattice dynamics and thermal properties of phononic semiconductors Physical Review B. 84: 115326. DOI: 10.1103/Physrevb.84.115326 |
0.384 |
|
| 2011 |
Kamis T, Bagci S, Tütüncü HM, Duman S, Srivastava GP. Ab initio calculation of phonons in bulk HfC and the HfC(001)(1 x 1) surface Philosophical Magazine. 91: 946-957. DOI: 10.1080/14786435.2010.536177 |
0.47 |
|
| 2011 |
AlZahrani AZ, Srivastava GP. Formation of nanoscale gold chain on a Si(110) surface: A density functional investigation Journal of Applied Physics. 110: 64314. DOI: 10.1063/1.3638071 |
0.434 |
|
| 2011 |
AlZahrani AZ, Srivastava GP. First-principles investigations of low-coverage Ca-induced reconstructions on the Si(001 ) surface Surface Science. 605: 101-106. DOI: 10.1016/J.Susc.2010.10.006 |
0.437 |
|
| 2010 |
Tütüncü HM, Bagci S, Srivastava GP. Electronic structure, phonons, and electron-phonon interaction in Mo3Si Physical Review B. 82. DOI: 10.1103/Physrevb.82.214510 |
0.36 |
|
| 2010 |
Hepplestone SP, Srivastava GP. Theory of interface scattering of phonons in superlattices Physical Review B. 82. DOI: 10.1103/Physrevb.82.144303 |
0.359 |
|
| 2010 |
Alshaikhi A, Barman S, Srivastava GP. Theory of the lattice thermal conductivity in bulk and films of GaN Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.195320 |
0.315 |
|
| 2010 |
Bağcı S, Tütüncü HM, Duman S, Srivastava GP. Phonons and superconductivity in fcc and dhcp lanthanum Physical Review B. 81: 144507. DOI: 10.1103/Physrevb.81.144507 |
0.374 |
|
| 2010 |
Bagci S, Yalcin BG, Tütüncü HM, Srivastava GP. Ground state, phonon spectrum, and superconducting properties of the cubic inverse perovskite Sc 3 AlN Physical Review B. 81: 54523. DOI: 10.1103/Physrevb.81.054523 |
0.311 |
|
| 2010 |
Usanmaz D, Srivastava GP, Çakmak M. Atomic and electronic structure of S-terminated GaAs(001) surface Journal of Applied Physics. 108: 63713. DOI: 10.1063/1.3477244 |
0.469 |
|
| 2010 |
Hepplestone SP, Srivastava GP. Phononic gaps in thin semiconductor superlattices Journal of Applied Physics. 107: 43504. DOI: 10.1063/1.3285415 |
0.406 |
|
| 2010 |
Miwa RH, Veiga RGA, Srivastava GP. Structural, electronic, and magnetic properties of pristine and oxygen-adsorbed graphene nanoribbons Applied Surface Science. 256: 5776-5782. DOI: 10.1016/J.Apsusc.2010.03.094 |
0.332 |
|
| 2010 |
AlZahrani AZ, Srivastava GP. Structural and electronic properties of H-passivated graphene Applied Surface Science. 256: 5783-5788. DOI: 10.1016/J.Apsusc.2010.03.088 |
0.441 |
|
| 2010 |
Weymouth AJ, Miwa RH, Srivastava GP, McLean AB. The role of a precursor state in thiophene chemisorption on Si(111)-7×7 Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 240-243. DOI: 10.1002/Pssc.200982505 |
0.35 |
|
| 2009 |
AlZahrani AZ, Srivastava GP. Gradual changes in electronic properties from graphene to graphite: first-principles calculations. Journal of Physics: Condensed Matter. 21: 495503-495503. PMID 21836199 DOI: 10.1088/0953-8984/21/49/495503 |
0.327 |
|
| 2009 |
AlZahrani AZ, Srivastava GP, Garg R, Migliorato MA. An ab initio study of electronic and structural properties of Mn in a GaAs environment Journal of Physics: Condensed Matter. 21: 485504. PMID 21832523 DOI: 10.1088/0953-8984/21/48/485504 |
0.405 |
|
| 2009 |
AlShaikhi A, Srivastava GP. Quantitative study of the enhancement of the thermal conductivity of AlN ceramics by nanoscale processing. Journal of Physics: Condensed Matter. 21: 174207. PMID 21825411 DOI: 10.1088/0953-8984/21/17/174207 |
0.305 |
|
| 2009 |
Srivastava GP. The anharmonic phonon decay rate in group-III nitrides Journal of Physics: Condensed Matter. 21: 174205. PMID 21825409 DOI: 10.1088/0953-8984/21/17/174205 |
0.356 |
|
| 2009 |
Srivastava GP, Tütüncü HM. Theoretical modelling of surface phonons Central European Journal of Physics. 7: 209-219. DOI: 10.2478/S11534-009-0032-X |
0.431 |
|
| 2009 |
AlZahrani AZ, Srivastava GP. Graphene to graphite: electronic changes within DFT calculations Brazilian Journal of Physics. 39: 694-698. DOI: 10.1590/S0103-97332009000600013 |
0.327 |
|
| 2009 |
Hepplestone S, Srivastava GP. Anharmonic Lifetime of Phonons in Nanophononic Semiconductors Mrs Proceedings. 1172. DOI: 10.1557/Proc-1172-T03-09 |
0.352 |
|
| 2009 |
AlZahrani AZ, Srivastava GP. Self-assembled Bi nanolines on the InAs(100) surface: a theoretical study International Journal of Nano and Biomaterials. 2: 155. DOI: 10.1504/Ijnbm.2009.027709 |
0.438 |
|
| 2009 |
Shimomura M, Kawaguchi TK, Fukuda Y, Murakami K, AlZahrani AZ, Srivastava GP. Bidentate chemisorption of acetic acid on a Si(001)-(2×1) surface: Experimental and theoretical investigations Physical Review B. 80. DOI: 10.1103/Physrevb.80.165324 |
0.369 |
|
| 2009 |
Miwa RH, Weymouth AJ, McLean AB, Srivastava GP. Ab initio study of thiophene chemisorption on Si (111) - (7×7) Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.115317 |
0.382 |
|
| 2009 |
Bagci S, Kamis T, Tütüncü HM, Srivastava GP. Ab initio calculation of phonons for bulk TiC and TiC(001)(1 X 1) Physical Review B. 80: 35405. DOI: 10.1103/Physrevb.80.035405 |
0.351 |
|
| 2009 |
Bağci S, Duman S, Tütüncü HM, Srivastava GP. Electronic and phonon properties of BX(110) (X=P, As, and Sb) and BeY(110) (Y=S, Se, and Te) surfaces Physical Review B. 79: 125326. DOI: 10.1103/Physrevb.79.125326 |
0.481 |
|
| 2009 |
Alzahrani AZ, Srivastava GP. Comparative study of clean and Bi-induced (2 × 4) reconstruction on the InP(001) surface Physical Review B. 79: 125309. DOI: 10.1103/Physrevb.79.125309 |
0.327 |
|
| 2009 |
AlZahrani AZ, Srivastava GP. Density-functional calculations for self-assembled Bi-nanolines on the InAs(100) surface Journal of Applied Physics. 106: 53713. DOI: 10.1063/1.3213373 |
0.463 |
|
| 2009 |
Duman S, Sütlü A, Bağcı S, Tütüncü HM, Srivastava GP. Structural, elastic, electronic, and phonon properties of zinc-blende and wurtzite BeO Journal of Applied Physics. 105: 33719. DOI: 10.1063/1.3075814 |
0.385 |
|
| 2009 |
Bagˇcı S, Duman S, Tütüncü HM, Srivastava GP. Ab initio calculations of phonon dispersion relations for bulk and (110) surface of cubic InN Journal of Physics and Chemistry of Solids. 70: 444-450. DOI: 10.1016/J.Jpcs.2008.11.016 |
0.478 |
|
| 2009 |
Bağcı S, Duman S, Tütüncü HM, Srivastava GP. Theoretical studies of SiC, AlN and their (110) surfaces Diamond and Related Materials. 18: 1057-1060. DOI: 10.1016/J.Diamond.2008.11.007 |
0.47 |
|
| 2008 |
Veiga RG, Miwa RH, Srivastava GP. Quenching of local magnetic moment in oxygen adsorbed graphene nanoribbons. The Journal of Chemical Physics. 128: 201101. PMID 18513000 DOI: 10.1063/1.2937453 |
0.319 |
|
| 2008 |
McLean AB, Hill IG, Lipton-Duffin JA, MacLeod JM, Miwa RH, Srivastava GP. Nanolines on silicon surfaces International Journal of Nanotechnology. 5: 1018-1057. DOI: 10.1504/Ijnt.2008.019830 |
0.429 |
|
| 2008 |
Tütüncü HM, Srivastava GP. Electronic structure and lattice dynamical properties of different tetragonal phases of BiFeO 3 Physical Review B. 78: 235209. DOI: 10.1103/Physrevb.78.235209 |
0.336 |
|
| 2008 |
Shimomura M, Ichikawa D, Srivastava GP, Liu KZ, Fukuda Y. Structure of the GaP(001)-4×2-In surface investigated with LEED, STM, photoelectron spectroscopy, and ab initio calculations Physical Review B. 78. DOI: 10.1103/Physrevb.78.125329 |
0.475 |
|
| 2008 |
Miwa RH, Orellana W, Srivastava GP. Iron silicide wires patterned by Bi nanolines on the H/Si(001) surface: Spin density functional calculations Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.115310 |
0.339 |
|
| 2008 |
AlZahrani AZ, Srivastava GP. Ca-induced intermediate reconstructions on the Si(111) surface Physical Review B. 77. DOI: 10.1103/Physrevb.77.235320 |
0.31 |
|
| 2008 |
Bagci S, Duman S, Tütuncü HM, Srivastava GP. Ab initiocalculations of the structure, electronic states and phonon dispersion of the BSb(110) surface Journal of Physics: Conference Series. 100: 072013. DOI: 10.1088/1742-6596/100/7/072013 |
0.323 |
|
| 2008 |
Tütuncü HM, Bagci S, Duman S, Srivastava GP. Ab initiocalculations of the electronic and phonon states on the HfC(001)-(1×1) surface Journal of Physics: Conference Series. 100: 072010. DOI: 10.1088/1742-6596/100/7/072010 |
0.311 |
|
| 2008 |
Tütüncü HM, Srivastava GP. Ab initio investigations of the phonon anomaly and superconductivity in fcc La Journal of Applied Physics. 104: 63916. DOI: 10.1063/1.2981192 |
0.303 |
|
| 2008 |
Tütüncü HM, Srivastava GP. Electronic structure and zone-center phonon modes in multiferroic bulk BiFeO3 Journal of Applied Physics. 103: 83712. DOI: 10.1063/1.2908865 |
0.399 |
|
| 2008 |
AlZahrani AZ, Srivastava GP, Miwa RH. Theoretical investigation of Mn adsorbates aside self-organised Bi nanolines on hydrogenated Si(0 0 1) surface Surface Science. 602: 2789-2795. DOI: 10.1016/J.Susc.2008.07.009 |
0.405 |
|
| 2008 |
Srivastava GP, Miwa RH. Nanostructure formation aided by self-organised Bi nanolines on Si(0 0 1) Applied Surface Science. 254: 8075-8082. DOI: 10.1016/J.Apsusc.2008.03.079 |
0.395 |
|
| 2008 |
AlZahrani AZ, Srivastava GP. Electronic and geometric investigations of the Ca/Si(1 1 1)-(5×2) surface Applied Surface Science. 254: 8083-8088. DOI: 10.1016/J.Apsusc.2008.03.052 |
0.409 |
|
| 2007 |
Hammerschmidt T, Migliorato MA, Powell D, Cullis AG, Srivastava GP. Composition and Strain Dependence of the Piezoelectric Coefficients in Semiconductor Alloys Mrs Proceedings. 1017. DOI: 10.1557/Proc-1017-Dd04-11 |
0.328 |
|
| 2007 |
AlShaikhi A, Srivastava GP. Theoretical investigations of phonon intrinsic mean-free path in zinc-blende and wurtzite AlN Physical Review B. 76: 195205. DOI: 10.1103/Physrevb.76.195205 |
0.306 |
|
| 2007 |
Tütüncü HM, Srivastava GP. Phonon spectrum and density of states onGaAs(001)−β2(2×4) Physical Review B. 76. DOI: 10.1103/Physrevb.76.085345 |
0.322 |
|
| 2007 |
Tütüncü HM, Bagci S, Srivastava GP. Electronic, elastic and phonon properties of the rock-salt LaSb and YSb Journal of Physics: Condensed Matter. 19: 156207. DOI: 10.1088/0953-8984/19/15/156207 |
0.426 |
|
| 2007 |
Tütüncü HM, Srivastava GP. Ab initio investigations of phonon anomalies and superconductivity in the rock-salt YS Philosophical Magazine. 87: 4109-4118. DOI: 10.1080/14786430701501835 |
0.391 |
|
| 2007 |
Barman S, Srivastava GP. Temperature dependence of the thermal conductivity of different forms of diamond Journal of Applied Physics. 101. DOI: 10.1063/1.2747540 |
0.313 |
|
| 2007 |
Tütüncü HM, Srivastava GP. Theoretical studies of electronic states and phonon modes on the TiC(0 0 1)(1 × 1) surface Surface Science. 601: 4025-4028. DOI: 10.1016/J.Susc.2007.04.135 |
0.49 |
|
| 2007 |
Bagˇcı S, Tütüncü HM, Srivastava GP. Ab initio calculations of structural, electronic and dynamical properties of BeSe(110) surface Surface Science. 601: 4087-4091. DOI: 10.1016/J.Susc.2007.04.095 |
0.484 |
|
| 2007 |
Miwa RH, Srivastava GP. A theoretical study of Ge adsorption on Si(0 0 1) covered with Bi nanolines Surface Science. 601: 3707-3710. DOI: 10.1016/J.Susc.2007.04.002 |
0.397 |
|
| 2007 |
AlShaikhi A, Srivastava GP. Phonon intrinsic mean free path in zincblende AlN Diamond and Related Materials. 16: 1413-1416. DOI: 10.1016/J.Diamond.2006.12.013 |
0.366 |
|
| 2007 |
Miwa RH, Orellana W, Srivastava GP. A theoretical study of Fe adsorption along Bi-nanolines on the H/Si(0 0 1) surface Applied Surface Science. 254: 96-98. DOI: 10.1016/J.Apsusc.2007.07.091 |
0.333 |
|
| 2007 |
Duman S, Baǧcı S, Tütüncü HM, Srivastava GP. Ground state properties of zinc-blende and wurtzite phases of MgS Physica Status Solidi (C). 4: 598-600. DOI: 10.1002/Pssc.200673255 |
0.385 |
|
| 2007 |
Baǧcı S, Duman S, Tütüncü HM, Srivastava GP. Structural and electronic properties of zinc blende BeTe and ist (110) surface Physica Status Solidi (C). 4: 595-597. DOI: 10.1002/Pssc.200673254 |
0.477 |
|
| 2006 |
Miwa RH, MacLeod JM, McLean AB, Srivastava GP. Reply to Comment on 'Bi nanolines on Si(001): registry with the substrate'. Nanotechnology. 17: 1803-5. PMID 26558598 DOI: 10.1088/0957-4484/17/6/N02 |
0.322 |
|
| 2006 |
Migliorato MA, Powell D, Cullis AG, Hammerschmidt T, Srivastava GP. Composition and strain dependence of the piezoelectric coefficients in InxGa1-xAs alloys Physical Review B. 74. DOI: 10.1103/Physrevb.74.245332 |
0.315 |
|
| 2006 |
Tütüncü HM, Srivastava GP, Bağcı S, Duman S. Theoretical examination of whether phonon dispersion in Nb3Sn is anomalous Physical Review B. 74. DOI: 10.1103/Physrevb.74.212506 |
0.331 |
|
| 2006 |
Hepplestone SP, Srivastava GP. Phonon-phonon interactions in single-wall carbon nanotubes Physical Review B. 74: 165420. DOI: 10.1103/Physrevb.74.165420 |
0.303 |
|
| 2006 |
Tütüncü HM, Srivastava GP. Atomic vibrational modes on GaAs(001)-β2(2×4) Physical Review B. 74. DOI: 10.1103/Physrevb.74.073307 |
0.306 |
|
| 2006 |
Miwa RH, Srivastava GP. Energetic stability, equilibrium geometry, and electronic properties of Bi-induced Si (001) - (2×n) surfaces Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/PhysRevB.74.035301 |
0.336 |
|
| 2006 |
Barman S, Srivastava GP. Thermal conductivity of suspended GaAs nanostructures: Theoretical study Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.205308 |
0.391 |
|
| 2006 |
Duman S, Bağcı S, Tütüncü HM, Srivastava GP. First-principles studies of ground-state and dynamical properties of MgS, MgSe, and MgTe in the rocksalt, zinc blende, wurtzite, and nickel arsenide phases Physical Review B. 73: 205201. DOI: 10.1103/Physrevb.73.205201 |
0.349 |
|
| 2006 |
Hepplestone SP, Srivastava GP. Lattice dynamics of silicon nanostructures Nanotechnology. 17: 3288-3298. DOI: 10.1088/0957-4484/17/13/035 |
0.335 |
|
| 2006 |
Tütüncü HM, Srivastava GP. Electronic structure, phonons and electron–phonon interaction in MgXNi3 (X = B, C and N) Journal of Physics: Condensed Matter. 18: 11089-11101. DOI: 10.1088/0953-8984/18/49/004 |
0.418 |
|
| 2006 |
Miwa RH, Srivastava GP. In nanolines and nanoclusters on self-assembled Bi-lines Surface Science. 600: 4048-4051. DOI: 10.1016/J.Susc.2006.01.121 |
0.354 |
|
| 2006 |
Duman S, Bagˇcı S, Tütüncü HM, Srivastava GP. Ground-state properties of arsenic deposited on the Ge(0 0 1)(2 × 1) surface Surface Science. 600: 3531-3535. DOI: 10.1016/J.Susc.2006.01.057 |
0.518 |
|
| 2006 |
Chuasiripattana K, Srivastava GP. Ab initio study of atomic geometry and electronic states of GaSb(0 0 1) reconstructions Surface Science. 600: 3803-3808. DOI: 10.1016/J.Susc.2005.12.074 |
0.416 |
|
| 2006 |
Cangözen M, Tütüncü HM, Güney Y, Srivastava GP. Ab initio calculations and dynamical properties of the Se:InP(1 1 0) and Te:InP(1 1 0) Surface Science. 600: 3526-3530. DOI: 10.1016/J.Susc.2005.12.067 |
0.463 |
|
| 2006 |
Duman S, Bağcı S, Tütüncü HM, Uğur G, Srivastava GP. Theoretical study of the structural, electronic and dynamical properties of rocksalt ScN and GaN Diamond and Related Materials. 15: 1175-1178. DOI: 10.1016/J.Diamond.2005.12.003 |
0.433 |
|
| 2006 |
Bağcı S, Duman S, Tütüncü HM, Srivastava GP, Uğur G. Ab initio calculation of the structural and dynamical properties of the zinc-blende BN and its (110) surface Diamond and Related Materials. 15: 1161-1165. DOI: 10.1016/J.Diamond.2005.10.038 |
0.472 |
|
| 2006 |
Chuasiripattana K, Srivastava GP. Atomic geometry, electronic states and possible hydrogen passivation of the InP(1 1 1)A surface Applied Surface Science. 252: 7678-7683. DOI: 10.1016/J.Apsusc.2006.03.087 |
0.418 |
|
| 2006 |
Srivastava GP. The electron counting rule and passivation of compound semiconductor surfaces Applied Surface Science. 252: 7600-7607. DOI: 10.1016/J.Apsusc.2006.03.076 |
0.417 |
|
| 2006 |
AlShaikhi A, Srivastava GP. Specific heat calculations of III-N bulk materials Physica Status Solidi (C). 3: 1495-1498. DOI: 10.1002/Pssc.200565120 |
0.301 |
|
| 2006 |
Jayavel P, Nakamura S, Kesavamoorthy R, Srivastava GP, Tomoda W, Koyama T, Hayakawa Y. Surface morphology effects on the optical phonon modes in InAsxSb1–x epilayers on GaAs(001) Physica Status Solidi B-Basic Solid State Physics. 243. DOI: 10.1002/Pssb.200541443 |
0.343 |
|
| 2005 |
Miwa RH, Macleod JM, McLean AB, Srivastava GP. The equilibrium geometry and electronic structure of Bi nanolines on clean and hydrogenated Si(001) surfaces. Nanotechnology. 16: 2427-35. PMID 20818030 DOI: 10.1088/0957-4484/16/10/073 |
0.432 |
|
| 2005 |
Miotto R, Ferraz AC, Srivastava GP. Maleic anhydride adsorption on silicon (001). Journal of Chemical Physics. 123: 74708-74708. PMID 16229611 DOI: 10.1063/1.2006676 |
0.365 |
|
| 2005 |
Tutuncu HM, Duman S, Bagci S, Srivastava GP. Atomic vibrations on the α-Sn(001)(2×1) surface investigated by a linear response scheme and an adiabatic bond-charge model Physical Review B. 72: 85327. DOI: 10.1103/Physrevb.72.085327 |
0.34 |
|
| 2005 |
Smardon RD, Srivastava GP. Electronic structure of the GaAs(114)A (2×1) and GaAs(114)B (2×1) surfaces Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.035317 |
0.459 |
|
| 2005 |
Tütüncü HM, Bağci S, Srivastava GP, Albudak AT, Uğur G. Structural and dynamical properties of zinc-blende GaN, AlN, BN, and their (110) surfaces Physical Review B. 71: 195309. DOI: 10.1103/Physrevb.71.195309 |
0.353 |
|
| 2005 |
Chuasiripattana K, Srivastava GP. Rotation of ad-dimers in the initial stages of Bi and Si deposition on the Si(001) surface Physical Review B. 71: 153312. DOI: 10.1103/Physrevb.71.153312 |
0.37 |
|
| 2005 |
Miwa RH, MacLeod JM, McLean AB, Srivastava GP. The equilibrium geometry and electronic structure of Bi nanolines on clean and hydrogenated Si(001) surfaces Nanotechnology. 16: 2427-2435. DOI: 10.1088/0957-4484/16/10/073 |
0.322 |
|
| 2005 |
Ugur G, Soyalp F, Tütüncü HM, Duman S, Srivastava GP. Ab initio calculation of the ground-state properties of CoSi2 Journal of Physics: Condensed Matter. 17: 7127-7132. DOI: 10.1088/0953-8984/17/44/005 |
0.458 |
|
| 2005 |
Mark AG, Lipton-Duffin JA, MacLeod JM, Miwa RH, Srivastava GP, McLean AB. The electronic properties of Si(001)-Bi(2 × n) Journal of Physics Condensed Matter. 17: 571-580. DOI: 10.1088/0953-8984/17/4/001 |
0.478 |
|
| 2005 |
Hepplestone SP, Srivastava GP. Lattice dynamics of ultrasmall silicon nanostructures Applied Physics Letters. 87: 231906. DOI: 10.1063/1.2138790 |
0.366 |
|
| 2005 |
Smardon RD, Srivastava GP. Ab initio surface reaction energetics of Si H 4 and Si 2 H 6 on Si (001) - (2×2) Journal of Chemical Physics. 123. DOI: 10.1063/1.2087347 |
0.35 |
|
| 2005 |
Smardon RD, Srivastava GP. Ab initio surface reaction energetics of H2X (X = O or S) on Si(0 0 1)-(2 × 1) Surface Science. 584: 161-168. DOI: 10.1016/J.Susc.2005.03.052 |
0.396 |
|
| 2005 |
MacLeod JM, Miwa RH, Srivastava GP, McLean AB. The electronic origin of contrast reversal in bias-dependent STM images of nanolines Surface Science. 576: 116-122. DOI: 10.1016/J.Susc.2004.11.045 |
0.368 |
|
| 2005 |
Miotto R, Srivastava GP, Ferraz AC. Methanol adsorption on silicon (0 0 1) Surface Science. 575: 287-299. DOI: 10.1016/J.Susc.2004.11.041 |
0.415 |
|
| 2005 |
Chuasiripattana K, Srivastava GP. Progressive changes in atomic structure and gap states on Si(0 0 1) by Bi adsorption Surface Science. 574: 43-51. DOI: 10.1016/J.Susc.2004.10.016 |
0.442 |
|
| 2005 |
Miwa RH, MacLeod JM, Srivastava GP, McLean AB. The geometry of Bi nanolines on Si(0 0 1) Applied Surface Science. 244: 157-160. DOI: 10.1016/J.Apsusc.2004.10.075 |
0.354 |
|
| 2005 |
Srivastava GP. Atomic-scale theoretical investigations of compound semiconductor surfaces Applied Surface Science. 244: 129-136. DOI: 10.1016/J.Apsusc.2004.10.073 |
0.41 |
|
| 2004 |
Schmidt TM, Miwa RH, Srivastava GP. STM images and energetics of the bi-covered ( Ö 3 × Ö 3) reconstructed Si(111) surface Brazilian Journal of Physics. 34: 629-631. DOI: 10.1590/S0103-97332004000400025 |
0.378 |
|
| 2004 |
Miotto R, Ferraz AC, Srivastava GP. Adsorption of C2H2-C2O3 on Si(001) Brazilian Journal of Physics. 34: 563-564. DOI: 10.1590/S0103-97332004000400006 |
0.337 |
|
| 2004 |
MacLeod JM, Lima CP, Miwa RH, Srivastava GP, McLean AB. Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure Materials Science and Technology. 20: 951-954. DOI: 10.1179/026708304225019894 |
0.414 |
|
| 2004 |
Tütüncü HM, Bağcı S, Srivastava GP. Structural, electronic, and dynamical properties of theC(001)−(2×1)surface Physical Review B. 70. DOI: 10.1103/Physrevb.70.195401 |
0.378 |
|
| 2004 |
Srivastava GP, Tütüncü HM, Günhan N. First-principles studies of structural, electronic, and dynamical properties of Be chalcogenides Physical Review B. 70: 85206. DOI: 10.1103/Physrevb.70.085206 |
0.343 |
|
| 2004 |
Barman S, Srivastava GP. Long-wavelength nonequilibrium optical phonon dynamics in cubic and hexagonal semiconductors Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.235208 |
0.328 |
|
| 2004 |
Smardon RD, Srivastava GP, Jenkins SJ. Electronic structure of a stepped semiconductor surface: Density functional theory ofSi(114)−(2×1) Physical Review B. 69. DOI: 10.1103/Physrevb.69.085303 |
0.493 |
|
| 2004 |
Chuasiripattana K, Miwa RH, Srivastava GP. Atomic geometry and electronic states on GaAs(1 1 1)A-Se( 2√3 × 2√3) Surface Science. 566: 909-915. DOI: 10.1016/J.Susc.2004.06.137 |
0.406 |
|
| 2004 |
Uǧur Ş, Tütüncü HM, Srivastava GP, Akgün I. First-principles study of surface phonons on the AlN(1 1 0) surface Surface Science. 566: 904-908. DOI: 10.1016/J.Susc.2004.06.136 |
0.425 |
|
| 2004 |
Tütüncü HM, Srivastava GP, Güzelsoy TT. First-principles study of structural and dynamical properties of α-Sn(0 0 1)-(2 × 1) Surface Science. 566: 900-903. DOI: 10.1016/J.Susc.2004.06.135 |
0.425 |
|
| 2004 |
Smardon RD, Srivastava GP. Ab initio pseudopotential calculations for the geometry and electronic structure of Si(1 1 4)-c(2 × 2) Surface Science. 566: 895-899. DOI: 10.1016/J.Susc.2004.06.117 |
0.475 |
|
| 2004 |
Çakmak M, Srivastava GP, Ellialtıoğlu Ş. An ab initio study of the Te surfactant on Ge/Si(0 0 1) Surface Science. 566: 719-722. DOI: 10.1016/J.Susc.2004.06.005 |
0.418 |
|
| 2004 |
Smardon RD, Srivastava GP. Ab initio pseudopotential calculations for the electronic and geometric structures of hydrogen covered Si(1 1 4)-(2 × 1) Applied Surface Science. 235: 305-312. DOI: 10.1016/J.Apsusc.2004.05.103 |
0.452 |
|
| 2004 |
Srivastava GP, Miwa RH. Self-organised wires and antiwires on semiconductor surfaces Applied Surface Science. 235: 293-304. DOI: 10.1016/J.Apsusc.2004.05.102 |
0.425 |
|
| 2004 |
Hepplestone SP, Srivastava GP. The lattice dynamics of rectangular silicon nanowires Physica Status Solidi (C). 1: 2617-2620. DOI: 10.1002/Pssc.200405389 |
0.35 |
|
| 2004 |
Tütüncü HM, Srivastava GP, Duman S, Guliyev E. Structural and dynamical properties of the Ge(001)/Sb(2×1) surface Physica Status Solidi (C). 1: 3031-3034. DOI: 10.1002/Pssc.200405377 |
0.461 |
|
| 2004 |
Tütüncü HM, Bağcį S, Srivastava GP. Ab initio determination of structural and dynamical properties of the InP(110)‐S interface Physica Status Solidi (C). 1: 3035-3038. DOI: 10.1002/Pssc.200405292 |
0.472 |
|
| 2004 |
Tütüncü HM, Bağcį S, Duman S, Srivastava GP. Geometry and phonon structure of the SiC(110) surface Physica Status Solidi (C). 1: 3023-3026. DOI: 10.1002/Pssc.200405291 |
0.474 |
|
| 2004 |
Tütüncü HM, Altuntaş H, Srivastava GP, Uğur G. First-principles study of electronic and dynamical properties of AuAl2 Physica Status Solidi (C). 1: 3027-3030. DOI: 10.1002/Pssc.200405290 |
0.44 |
|
| 2004 |
Smardon RD, Srivastava GP, Jenkins SJ. Electronic structure of a stepped semiconductor surface: Density functional theory of Si(114)-(2X1) Physical Review B - Condensed Matter and Materials Physics. 69: 853031-853036. |
0.574 |
|
| 2003 |
Thachepan S, Okuyama H, Aruga T, Nishijima A, Ando T, Bagci S, Tutuncu H, Srivastava G. Surface vibrations of diamond C(001)(2×1) Physical Review B. 68: 33310. DOI: 10.1103/Physrevb.68.033310 |
0.4 |
|
| 2003 |
Cakmak M, Srivastava G, Ellialtioglu S. Adsorption of Te on Ge(001): Density-functional calculations Physical Review B. 67. DOI: 10.1103/Physrevb.67.205314 |
0.366 |
|
| 2003 |
Miwa RH, Miotto R, Ferraz AC, Srivastava GP. Ab initio study of the GaAs(001)-In(4×2) surface Physical Review B. 67: 45325. DOI: 10.1103/Physrevb.67.045325 |
0.394 |
|
| 2003 |
Miwa RH, Schmidt TM, Srivastava GP. Bi covered Si(111) surface revisited Journal of Physics Condensed Matter. 15: 2441-2447. DOI: 10.1088/0953-8984/15/17/302 |
0.42 |
|
| 2003 |
Çakmak M, Srivastava GP. Theoretical study of dangling-bond wires on the H-terminated Si surface Surface Science. 532: 556-559. DOI: 10.1016/S0039-6028(03)00118-3 |
0.431 |
|
| 2003 |
Tütüncü HM, Srivastava GP, Tse JS. Structural and dynamical properties of As overlayers on the GaAs(1 1 0) surface Surface Science. 916-921. DOI: 10.1016/S0039-6028(03)00083-9 |
0.436 |
|
| 2003 |
Shaltaf R, Çakmak M, Mete E, Srivastava GP, Ellialtıoğlu Ş. Ab initio study of the one-monolayer Sb/Si(0 0 1) interface Surface Science. 532: 956-960. DOI: 10.1016/J.Susc.2004.06.036 |
0.409 |
|
| 2002 |
Miotto R, Ferraz AC, Srivastava GP. First-principles study of the adsorption of PH3 on Ge(001) and Si(001) surfaces Brazilian Journal of Physics. 32: 392-395. DOI: 10.1590/S0103-97332002000200041 |
0.373 |
|
| 2002 |
Miwa RH, Srivastava GP. Self-organized Bi lines on the Si(001) surface: A theoretical study Physical Review B. 66. DOI: 10.1103/Physrevb.66.235317 |
0.428 |
|
| 2002 |
TüTüNCü HM, Srivastava GP, Tse JS. Structural, electronic, and dynamical properties of Si(110) capped with a monolayer of GaAs Physical Review B. 66: 195305. DOI: 10.1103/Physrevb.66.195305 |
0.493 |
|
| 2002 |
Tütüncü HM, Miotto R, Srivastava GP, Tse JS. Phonons on group-III nitride (110) surfaces Physical Review B. 66: 115304. DOI: 10.1103/Physrevb.66.115304 |
0.337 |
|
| 2002 |
Miotto R, Ferraz AC, Srivastava GP. Acetylene adsorption on the Si(001) surface Physical Review B. 65. DOI: 10.1103/Physrevb.65.075401 |
0.441 |
|
| 2002 |
Tütüncü HM, Miotto R, Srivastava GP, Tse JS. Phonons on GaN(110) Applied Physics Letters. 80: 3322-3324. DOI: 10.1063/1.1476401 |
0.449 |
|
| 2002 |
Tütüncü HM, Srivastava GP, Aslan M. Vibrational properties of the As-deposited InP(1 1 0) surface Physica B: Condensed Matter. 316: 479-482. DOI: 10.1016/S0921-4526(02)00548-3 |
0.425 |
|
| 2002 |
Tütüncü HM, Srivastava GP, Duman S. Lattice dynamics of the zinc-blende and wurtzite phases of nitrides Physica B-Condensed Matter. 316: 190-194. DOI: 10.1016/S0921-4526(02)00455-6 |
0.312 |
|
| 2002 |
Srivastava GP. Surface passivation by dissociative molecular adsorption Vacuum. 67: 11-20. DOI: 10.1016/S0042-207X(02)00203-8 |
0.438 |
|
| 2002 |
Çakmak M, Srivastava GP. Adsorption of GeH2 on the bare and hydrogenated Ge(001) surfaces Vacuum. 67: 21-25. DOI: 10.1016/S0042-207X(02)00189-6 |
0.386 |
|
| 2002 |
Tütüncü HM, Srivastava GP, Tse JS. First-principles study of structural and dynamical properties of As overlayers on InP(110) Surface Science. 512: 67-76. DOI: 10.1016/S0039-6028(02)01574-1 |
0.362 |
|
| 2002 |
Miwa RH, Schmidt TM, Srivastava GP. Ab initio study of the self-organised Bi-lines on the Si(0 0 1) surface Surface Science. 507: 368-373. DOI: 10.1016/S0039-6028(02)01273-6 |
0.446 |
|
| 2002 |
Bülbül MM, Çakmak M, Srivastava GP, Çolakoglu K. Segregation and non-segregation of Ge for H(Cl):Si(001)/Ge-(2×1) and H(Cl):Si(001)/Ge-(3×1) Surface Science. 507: 40-45. DOI: 10.1016/S0039-6028(02)01172-X |
0.431 |
|
| 2002 |
Çakmak M, Srivastava GP, Ellialtıoǧlu Ş, Çolakoǧlu K. Ab initio study of the adsorption and desorption of Se on the Si(001) surface Surface Science. 507: 29-33. DOI: 10.1016/S0039-6028(02)01170-6 |
0.424 |
|
| 2002 |
Çakmak M, Srivastava GP. Ab initio study of the adsorption of In on the Ge(0 0 1) surface Surface Science. 566: 23-28. DOI: 10.1016/S0039-6028(02)01169-X |
0.418 |
|
| 2002 |
Miotto R, Ferraz AC, Srivastava GP. Comparative study of the adsorption of C2H4 on the Si(0 0 1) and Ge(0 0 1) surfaces Surface Science. 12-17. DOI: 10.1016/S0039-6028(02)01167-6 |
0.326 |
|
| 2002 |
Tütüncü HM, Srivastava GP, Uǧur G. Vibrational properties of the Sb:InP() surface Surface Science. 1-6. DOI: 10.1016/S0039-6028(02)01165-2 |
0.413 |
|
| 2001 |
TüTüNCü HM, Srivastava GP. Electronic and vibrational properties of the As:InP(110) and Sb:InP(110) surfaces Physical Review B. 65: 35319. DOI: 10.1103/Physrevb.65.035319 |
0.493 |
|
| 2001 |
Bülbül MM, Çakmak M, Srivastava GP, Çolakoǧlu K. Effect of hydrogenation on the adsorption of Ge on Si ( 001 ) Physical Review B. 64: 155318. DOI: 10.1103/Physrevb.64.155318 |
0.402 |
|
| 2001 |
Miotto R, Srivastava GP, Ferraz AC. Dissociative adsorption of PH 3 on the Si(001) surface Physical Review B. 63: 125321. DOI: 10.1103/Physrevb.63.125321 |
0.314 |
|
| 2001 |
Miotto R, Srivastava GP, Miwa RH, Ferraz AC. A comparative study of dissociative adsorption of NH3, PH3, and AsH3 on Si(001)-(2×1) Journal of Chemical Physics. 114: 9549-9556. DOI: 10.1063/1.1355766 |
0.388 |
|
| 2001 |
Miwa RH, Srivastava GP. Sb-covered GaAs(1 1 1)B-(3×8) surface: a theoretical study Surface Science. 1308-1313. DOI: 10.1016/S0039-6028(01)00794-4 |
0.47 |
|
| 2001 |
Tütüncü HM, Miotto R, Srivastava GP. A comparative study of surface phonons on CdTe(1 1 0) and InSb(1 1 0) Surface Science. 580-586. DOI: 10.1016/S0039-6028(00)01067-0 |
0.485 |
|
| 2001 |
Miotto R, Srivastava GP, Ferraz AC. First-principles calculations of the adsorption and dissociation of PH3 on Si(0 0 1)-(2×1) Surface Science. 482: 160-165. DOI: 10.1016/S0039-6028(00)01045-1 |
0.337 |
|
| 2001 |
Çakmak M, Srivastava GP. Adsorption of GeH2 on the Si(001) surface Surface Science. 26-31. DOI: 10.1016/S0039-6028(00)01002-5 |
0.454 |
|
| 2001 |
Miwa RH, Srivastava GP. Atomic geometry, electronic structure and image state for the Si(1 1 1)-In(4×1) nanowire Surface Science. 473: 123-132. DOI: 10.1016/S0039-6028(00)00960-2 |
0.468 |
|
| 2001 |
Ikonić Z, Srivastava GP, Inkson JC. Electronic structure of AgBr(111) twin boundaries Journal of Physics and Chemistry of Solids. 62: 579-584. DOI: 10.1016/S0022-3697(00)00218-3 |
0.627 |
|
| 2001 |
Srivastava GP. Geometry, electrons, phonons and reactions on Si(001) surfaces Computer Physics Communications. 137: 143-162. DOI: 10.1016/S0010-4655(01)00176-X |
0.419 |
|
| 2000 |
Tütüncü HM, Miotto R, Srivastava GP. Phonons on II-VI (110) semiconductor surfaces Physical Review B. 62: 15797-15805. DOI: 10.1103/Physrevb.62.15797 |
0.334 |
|
| 2000 |
Miwa RH, Srivastava GP. Structure and electronic states of InAs(001)-(2×4) surfaces Physical Review B - Condensed Matter and Materials Physics. 62: 15778-15787. DOI: 10.1103/Physrevb.62.15778 |
0.38 |
|
| 2000 |
Çakmak M, Srivastava GP. Dissociative adsorption of Si 2 H 6 on the Si(001) surface Physical Review B. 61: 10216-10222. DOI: 10.1103/Physrevb.61.10216 |
0.378 |
|
| 2000 |
Miotto R, Srivastava GP, Ferraz AC. Structure of Zn adsorption on GaAs(001)-(2×4) Applied Physics Letters. 76: 3735-3737. DOI: 10.1063/1.126766 |
0.393 |
|
| 2000 |
Miotto R, Srivastava GP, Ferraz AC. Effects of gradient and non-linear core corrections on structural and electronic properties of GaN bulk and (001) surfaces Physica B-Condensed Matter. 292: 97-108. DOI: 10.1016/S0921-4526(00)00488-9 |
0.455 |
|
| 2000 |
Srivastava GP. Theoretical modelling of semiconductor surfaces and interfaces Vacuum. 57: 121-129. DOI: 10.1016/S0042-207X(00)00115-9 |
0.407 |
|
| 2000 |
Tütüncü HM, Srivastava GP. Atomic geometry, electronic states and vibrational properties of the AlAs(110) surface Surface Science. 457: 211-218. DOI: 10.1016/S0039-6028(00)00376-9 |
0.478 |
|
| 2000 |
Çakmak M, Srivastava GP. Comparative study of Bi overlayers on III-Sb(110) (1×1) surfaces Surface Science. 26-29. DOI: 10.1016/S0039-6028(00)00182-5 |
0.402 |
|
| 2000 |
Çakmak M, Srivastava GP. Structure and energetics of segregated and non-segregated H:Ge(001)/Si and Cl:Ge(001)/Si Surface Science. 454: 166-171. DOI: 10.1016/S0039-6028(00)00176-X |
0.401 |
|
| 2000 |
Tütüncü HM, Srivastava GP. Phonon dynamics of Si(001)/Bi(2×1) Surface Science. 504-508. DOI: 10.1016/S0039-6028(00)00175-8 |
0.457 |
|
| 2000 |
Miotto R, Ferraz AC, Srivastava GP. Dissociative adsorption of NF3 on Si(001)-(2×1) Surface Science. 454: 152-156. DOI: 10.1016/S0039-6028(00)00163-1 |
0.4 |
|
| 2000 |
Miotto R, Ferraz AC, Srivastava GP. III–N(110) surface relaxation and its dependence on the chemical bonding Solid State Communications. 115: 67-71. DOI: 10.1016/S0038-1098(00)00145-9 |
0.403 |
|
| 1999 |
Çakmak M, Srivastava GP. Adsorption of partially and fully dissociated H 2 S molecules on the Si(001) and Ge(001) surfaces Physical Review B. 60: 5497-5505. DOI: 10.1103/Physrevb.60.5497 |
0.336 |
|
| 1999 |
Srivastava GP. Dimer Length Variation For Different Reconstructions Of Si, Ge, And Mixed Si-Ge Dimers On Si(001) And Ge(001) Substrates Physical Review B. 60: 1488-1491. DOI: 10.1103/Physrevb.60.1488 |
0.321 |
|
| 1999 |
Tütüncü HM, Jenkins SJ, Srivastava GP. Characterization of theGe(001)/Si−(2×1)surface using lattice dynamics Physical Review B. 60: 10648-10651. DOI: 10.1103/Physrevb.60.10648 |
0.559 |
|
| 1999 |
Tutuncu HM, Srivastava GP. Atomic Geometry, Electronic Structure, And Vibrational Properties Of The Alsb(110) And Gasb(110) Surfaces Physical Review B. 59: 4925-4932. DOI: 10.1103/Physrevb.59.4925 |
0.444 |
|
| 1999 |
Miotto R, Srivastava GP, Ferraz AC. Role Of Generalized-Gradient Approximation In Structural And Electronic Properties Of Bulk And Surface Of Beta -Gan And Gaas Physical Review B. 59: 3008-3014. DOI: 10.1103/Physrevb.59.3008 |
0.384 |
|
| 1999 |
Tütüncü HM, Srivastava GP. Surface phonons on Si(001)/As(2×1) Physica B-Condensed Matter. 263: 424-428. DOI: 10.1016/S0921-4526(98)01402-1 |
0.465 |
|
| 1999 |
Lambert K, Srivastava GP. Confinement of optical phonon modes in thin (GaAs) n (AlAs) n superlattices Physica B-Condensed Matter. 263: 517-521. DOI: 10.1016/S0921-4526(98)01252-6 |
0.356 |
|
| 1999 |
Tütüncü HM, Srivastava GP. Surface Dynamics Of Alsb(110) And Gap(110) Physica B-Condensed Matter. 263: 400-403. DOI: 10.1016/S0921-4526(98)01241-1 |
0.447 |
|
| 1999 |
Ferraz AC, Srivastava GP. Passivation of InP(001) by sulfur Applied Surface Science. 142: 23-27. DOI: 10.1016/S0169-4332(98)00732-6 |
0.415 |
|
| 1999 |
Srivastava GP. Pseudopotential studies of co-adsorption of group-V elements and Ge on Si(001) surfaces Surface Science. 443: 253-264. DOI: 10.1016/S0039-6028(99)01016-X |
0.358 |
|
| 1999 |
Srivastava GP. Ab initio pseudopotential calculations for electronic and geometric structure of mixed Si–Ge dimers on the Si(001)-(1×2) and Si(001)-(2×4) surfaces Surface Science. 433: 909-914. DOI: 10.1016/S0039-6028(99)00528-2 |
0.477 |
|
| 1999 |
Miotto R, Srivastava GP, Ferraz AC. First-principles pseudopotential study of GaN and BN (110) surfaces Surface Science. 426: 75-82. DOI: 10.1016/S0039-6028(99)00282-4 |
0.441 |
|
| 1999 |
Tütüncü HM, Srivastava GP. Electronic and vibrational properties of the GaSb(110) surface Surface Science. 433: 357-361. DOI: 10.1016/S0039-6028(99)00137-5 |
0.495 |
|
| 1999 |
Çakmak M, Srivastava GP. Ab-initio study of the adsorption of H2S onto the Si(001) surface Surface Science. 433: 420-424. DOI: 10.1016/S0039-6028(99)00124-7 |
0.395 |
|
| 1999 |
Miotto R, Srivastava GP, Ferraz AC. The role of generalised gradient approximation in structural and electronic properties of bulk and surface of β-GaN and GaAs Surface Science. 433: 377-381. DOI: 10.1016/S0039-6028(99)00109-0 |
0.47 |
|
| 1998 |
Srivastava GP, Jenkins SJ. Atomic Structure of the GaAs(001)-β2(2 × 4) Surface Surface Review and Letters. 5: 219-222. DOI: 10.1142/S0218625X98000402 |
0.598 |
|
| 1998 |
Jenkins SJ, Srivastava GP. Atomic Structure of a Monolayer of Ge on Si(001)(2 × 1) Surface Review and Letters. 5: 97-100. DOI: 10.1142/S0218625X98000207 |
0.603 |
|
| 1998 |
Tütüncü HM, Jenkins SJ, Srivastava GP. Vibrational properties of Ge- and Sb-adsorbed Si(001) surfaces Physical Review B. 58: 10754-10760. DOI: 10.1103/Physrevb.58.10754 |
0.592 |
|
| 1998 |
Dixon RJ, McConville CF, Jenkins SJ, Srivastava GP. Structure and stability of the Si(001)c(4×4)-Sb surface Physical Review B. 57: R12701-R12704. DOI: 10.1103/Physrevb.57.R12701 |
0.629 |
|
| 1998 |
Jenkins SJ, Srivastava GP. Structure and energetics of segregated and nonsegregated Ge(001)/Si(2×1) Physical Review B. 57: 8794-8796. DOI: 10.1103/Physrevb.57.8794 |
0.566 |
|
| 1998 |
Tütüncü HM, Jenkins SJ, Srivastava GP. Atomic geometry, electronic structure, and vibrational properties of the Ge(001)(2×1) surface Physical Review B. 57: 4649-4655. DOI: 10.1103/Physrevb.57.4649 |
0.633 |
|
| 1998 |
Ikoníc Z, Srivastava GP, Inkson JC. Electronic-structure calculations of self-organized PbS-Bi2S3-(Ag2S) (113) twinning superlattices Physical Review B - Condensed Matter and Materials Physics. 57: 4557-4565. DOI: 10.1103/Physrevb.57.4557 |
0.589 |
|
| 1998 |
Tutuncu HM, Srivastava GP. Calculation of phonon dispersion on the ZnSe(110) surface Physical Review B. 57: 3791-3794. DOI: 10.1103/Physrevb.57.3791 |
0.422 |
|
| 1998 |
Gay SCA, Jenkins SJ, Srivastava GP. Comparativeab initiopseudopotential studies of group V overlayers on Si(001) Journal of Physics: Condensed Matter. 10: 7751-7768. DOI: 10.1088/0953-8984/10/35/009 |
0.602 |
|
| 1998 |
Joubert DP, Srivastava GP. Coupling-constant dependence of the density functional correlation energy Journal of Chemical Physics. 109: 5212-5220. DOI: 10.1063/1.477138 |
0.302 |
|
| 1998 |
Çakmak M, Srivastava GP. Adsorption and desorption of S on and off Si(001) studied by ab initio density functional theory Journal of Applied Physics. 84: 6070-6075. DOI: 10.1063/1.368918 |
0.472 |
|
| 1998 |
Rundell AR, Srivastava GP, Inkson JC, Johnson EA, MacKinnon A. Composite electron-hole states in GaSb/InAs quantum wells Physica B: Condensed Matter. 249: 710-713. DOI: 10.1016/S0921-4526(98)00297-X |
0.612 |
|
| 1998 |
Tütüncü HM, Jenkins SJ, Srivastava GP. A study of atomic vibrations on Si(001)(2 × 1)Ge Applied Surface Science. 151-155. DOI: 10.1016/S0169-4332(97)00542-4 |
0.445 |
|
| 1998 |
Tütüncü HM, Çakmak M, Srivastava GP. Structural, electronic and vibrational properties of the InSb(110) surface Applied Surface Science. 146-150. DOI: 10.1016/S0169-4332(97)00541-2 |
0.493 |
|
| 1998 |
Jenkins SJ, Srivastava GP. Structural studies of Si(001)/Sb(0.25 ML)-c(4 × 4) Applied Surface Science. 123: 48-51. DOI: 10.1016/S0169-4332(97)00519-9 |
0.419 |
|
| 1998 |
Çakmak M, Srivastava GP. An ab initio calculation of the adsorption of H2S onto InP(110)-(1 × 1) surface Applied Surface Science. 123: 52-55. DOI: 10.1016/S0169-4332(97)00518-7 |
0.441 |
|
| 1998 |
Jenkins S, Srivastava G. Thermodynamic evidence for surfactant behaviour of Sb in the growth of Ge on Si(001) Surface Science. 398: L308-L313. DOI: 10.1016/S0039-6028(98)80032-0 |
0.598 |
|
| 1998 |
Çakmak M, Srivastava GP. Theoretical study of the GaAs(110)-(1×1)–H2S surface Surface Science. 402: 658-662. DOI: 10.1016/S0039-6028(97)00931-X |
0.448 |
|
| 1998 |
Casagrande D, Srivastava GP, Ferraz AC. Theoretical calculations for Si(001)-(2×1)Cl Surface Science. 653-657. DOI: 10.1016/S0039-6028(97)00929-1 |
0.469 |
|
| 1998 |
Tütüncü HM, Jenkins SJ, Srivastava GP. A study of atomic vibrations on Si(001)/Sb(2×1) Surface Science. 402: 42-46. DOI: 10.1016/S0039-6028(97)00928-X |
0.458 |
|
| 1998 |
Tütüncü HM, Srivastava GP. Vibrational properties of ZnSe(110) surface Surface Science. 649-652. DOI: 10.1016/S0039-6028(97)00927-8 |
0.421 |
|
| 1998 |
Jenkins SJ, Srivastava GP, Dixon RJ, McConville CF. Ab initio calculation of geometry and bonding for overlaid and inlaid models of Si(001)/Sb(0.25ML)-c(4×4) Surface Science. 645-648. DOI: 10.1016/S0039-6028(97)00925-4 |
0.428 |
|
| 1998 |
Jenkins SJ, Srivastava GP. Ab-initio density functional calculations for Si(001)/Bi(1ML)-(2×1) Surface Science. 641-644. DOI: 10.1016/S0039-6028(97)00924-2 |
0.459 |
|
| 1997 |
Jenkins SJ, Srivastava GP. Comparative study of Sb bonding on group-IV semiconductor (001) substrates Physical Review B. 56: 9221-9223. DOI: 10.1103/Physrevb.56.9221 |
0.515 |
|
| 1997 |
Tütüncü HM, Jenkins SJ, Srivastava GP. Theoretical studies of atomic vibrations on theSi(001)(2×1)surface Physical Review B. 56: 4656-4664. DOI: 10.1103/Physrevb.56.4656 |
0.587 |
|
| 1997 |
Çakmak M, Srivastava GP. Calculation of atomic geometry, electronic states, and bonding for the S-deposited InP(110) surface Physical Review B. 56: 1928-1935. DOI: 10.1103/Physrevb.56.1928 |
0.427 |
|
| 1997 |
Rundell AR, Srivastava GP, Inkson JC. In-plane magnetic field studies of InAs/GaSb superlattices Physical Review B - Condensed Matter and Materials Physics. 55: 5177-5183. DOI: 10.1103/Physrevb.55.5177 |
0.517 |
|
| 1997 |
Srivastava GP. Theory of semiconductor surface reconstruction Reports On Progress in Physics. 60: 561-613. DOI: 10.1088/0034-4885/60/5/002 |
0.419 |
|
| 1997 |
Srivastava GP, Jenkins SJ. Atomic structure and bonding on Surface Science. 23-26. DOI: 10.1016/S0039-6028(97)01321-6 |
0.376 |
|
| 1997 |
Jenkins S, Srivastava G. Electrostatic implications for Sb-mediated growth of Ge on the Si(001) surface Surface Science. 384: L886-L891. DOI: 10.1016/S0039-6028(97)00340-3 |
0.609 |
|
| 1997 |
Jenkins SJ, Srivastava GP. Energetic evidence for mixed dimer growth on the surface Surface Science. 887-890. DOI: 10.1016/S0039-6028(96)01505-1 |
0.424 |
|
| 1997 |
Çakmak M, Srivastava GP. A theoretical study of sulphur adsorption on InP(110) Surface Science. 592-596. DOI: 10.1016/S0039-6028(96)01454-9 |
0.359 |
|
| 1997 |
Tütüncü HM, Jenkins SJ, Srivastava GP. Phonon modes for the symmetric and asymmetric dimer models of the Si(001)(2 × 1) surface Surface Science. 335-338. DOI: 10.1016/S0039-6028(96)01409-4 |
0.446 |
|
| 1997 |
Tütüncü HM, Srivastava GP. A comparative study of atomic vibrations on GaAs(110) and InAs(110) Surface Science. 304-307. DOI: 10.1016/S0039-6028(96)01398-2 |
0.455 |
|
| 1997 |
Ferraz AC, Srivastava GP. Atomic geometry and electronic structure of S/InP(001) Surface Science. 121-124. DOI: 10.1016/S0039-6028(96)01376-3 |
0.437 |
|
| 1997 |
Tütüncü HM, Srivastava GP. Theory of localized phonons on III-V(110) surfaces Journal of Physics and Chemistry of Solids. 58: 685-694. DOI: 10.1016/S0022-3697(97)00007-3 |
0.423 |
|
| 1996 |
Tan W, Inkson JC, Srivastava GP. Microscopic calculation of valence-band states in semiconductor structures in the presence of a magnetic field. Physical Review. B, Condensed Matter. 54: 14623-14632. PMID 9985470 DOI: 10.1103/Physrevb.54.14623 |
0.598 |
|
| 1996 |
Tütüncü HM, Srivastava GP. Surface phonons on InP(110) with the adiabatic bond-charge model. Physical Review B. 53: 15675-15681. PMID 9983402 DOI: 10.1103/Physrevb.53.15675 |
0.344 |
|
| 1996 |
Srivastava GP, Jenkins SJ. Atomic geometry and bonding on the GaAs(001)- beta 2(2 x 4) surface from ab initio pseudopotential calculations. Physical Review. B, Condensed Matter. 53: 12589-12592. PMID 9982918 DOI: 10.1103/Physrevb.53.12589 |
0.588 |
|
| 1996 |
Jenkins SJ, Srivastava GP. Theoretical evidence concerning mixed dimer growth on the surface Journal of Physics: Condensed Matter. 8: 6641-6651. DOI: 10.1088/0953-8984/8/36/016 |
0.604 |
|
| 1996 |
Tütüncü HM, Srivastava GP. Phonon dispersion on a GaAs(110) surface studied using the adiabatic bond charge model Journal of Physics: Condensed Matter. 8: 1345-1358. DOI: 10.1088/0953-8984/8/10/007 |
0.39 |
|
| 1996 |
Schmidt WG, Bechstedt F, Srivastava GP. Adsorption of group-V elements on III–V (1 1 0) surfaces Surface Science Reports. 25: 141-223. DOI: 10.1016/S0167-5729(96)00006-4 |
0.425 |
|
| 1996 |
Srivastava GP, Jenkins SJ. Theoretical studies of GaAs(001)-Ge(2 × 1) and (1 × 2) structures Surface Science. 416-419. DOI: 10.1016/0039-6028(95)01172-2 |
0.444 |
|
| 1996 |
Jenkins SJ, Srivastava GP. Bonding and structure of the Si(001)(2 × 1)-Sb surface Surface Science. 411-415. DOI: 10.1016/0039-6028(95)01171-4 |
0.474 |
|
| 1996 |
Schmidt WG, Bechstedt F, Srivastava GP. Phonons at III-V (110) surfaces Surface Science. 83-88. DOI: 10.1016/0039-6028(95)01095-5 |
0.438 |
|
| 1995 |
Jenkins SJ, Srivastava GP, Inkson JC. Density functional and quasiparticle calculations on the GaP(110) surface Surface Science. 331: 1238-1243. DOI: 10.1142/S0218625X94000461 |
0.74 |
|
| 1995 |
Srivastava GP, Umerski A. Geometry and electronic structure of selenium-treated InP(110) Surface Science. 590-593. DOI: 10.1016/0039-6028(95)00323-1 |
0.486 |
|
| 1995 |
Schmidt WG, Srivastava GP. III-V(110)Sb(1 ML): structural and dynamical properties Surface Science. 540-545. DOI: 10.1016/0039-6028(95)00304-5 |
0.468 |
|
| 1995 |
Ikonic Z, Srivastava GP, Inkson JC. Electronic properties of PbS(111) twin boundaries and twinning superlattices Superlattices and Microstructures. 17: 393-396. DOI: 10.1006/Spmi.1995.1068 |
0.615 |
|
| 1994 |
Usher S, Srivastava GP. Theoretical study of the anharmonic decay of nonequilibrium LO phonons in semiconductor structures. Physical Review B. 50: 14179-14186. PMID 9975638 DOI: 10.1103/Physrevb.50.14179 |
0.379 |
|
| 1994 |
Umerski A, Srivastava GP. ELECTRONIC BAND STRUCTURES OF InAs(110) AND InAs(110)Bi(1 ML) Surface Review and Letters. 1: 681-684. DOI: 10.1142/S0218625X9400093X |
0.44 |
|
| 1994 |
Srivastava GP. Chemisorption of sb on III-V(110) Surfaces Surface Review and Letters. 1: 677-680. DOI: 10.1142/S0218625X94000928 |
0.449 |
|
| 1994 |
Umerski A, Srivastava GP. ATOMIC GEOMETRY OF III-V SEMICONDUCTORS WITH Bi OVERLAYERS Surface Review and Letters. 1: 495-499. DOI: 10.1142/S0218625X94000515 |
0.428 |
|
| 1994 |
JENKINS S, SRIVASTAVA G, INKSON J. DENSITY FUNCTIONAL AND QUASIPARTICLE CALCULATIONS ON THE GaAs(110) SURFACE Surface Review and Letters. 1: 473-476. DOI: 10.1142/S0218625X94000461 |
0.598 |
|
| 1994 |
Jenkins SJ, Srivastava GP, Inkson JC. Ab initio pseudopotential calculation of ground-state and excited-state properties of gallium nitride Journal of Physics Condensed Matter. 6: 8781-8794. DOI: 10.1088/0953-8984/6/42/010 |
0.723 |
|
| 1994 |
Tan W, Inkson JC, Srivastava GP. Microscopic study of Landau level states in quantum wires Semiconductor Science and Technology. 9: 1305-1315. DOI: 10.1088/0268-1242/9/7/003 |
0.593 |
|
| 1994 |
Umerski A, Srivastava GP. Calculated electronic band structures of III-V semiconductors with metallic overlayers Surface Science. 963-968. DOI: 10.1016/0039-6028(94)91524-5 |
0.478 |
|
| 1994 |
Ikonić Z, Srivastava GP, Inkson JC. Electronic structure of twinning superlattices Surface Science. 307: 880-884. DOI: 10.1016/0039-6028(94)91508-3 |
0.653 |
|
| 1994 |
Umerski A, Srivastava GP. A robust method of calculating surface atomic geometry Surface Science. 680-684. DOI: 10.1016/0039-6028(94)91476-1 |
0.436 |
|
| 1994 |
Srivastava GP. Ab initio molecular dynamics study of InP(110)-Sb(1ML) Surface Science. 328-334. DOI: 10.1016/0039-6028(94)90414-6 |
0.46 |
|
| 1994 |
Schmidt W, Srivastava G. First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110) Solid State Communications. 89: 345-348. DOI: 10.1016/0038-1098(94)90597-5 |
0.407 |
|
| 1994 |
Narayan V, Srivastava GP, Inkson JC. Finite fields and intervalley scattering in a resonant tunnelling quantum wire and dot double barrier structure using a multiband microscopic layer method Superlattices and Microstructures. 16: 403-412. DOI: 10.1006/Spmi.1994.1159 |
0.585 |
|
| 1993 |
Ikonic Z, Srivastava GP, Inkson JC. Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors. Physical Review. B, Condensed Matter. 48: 17181-17193. PMID 10008326 DOI: 10.1103/Physrevb.48.17181 |
0.587 |
|
| 1993 |
Tan W, Inkson JC, Srivastava GP. Disorder effects on tunneling through one-dimensional double-barrier quantum-well structures: A coherent-potential approximation. Physical Review. B, Condensed Matter. 47: 4372-4378. PMID 10006584 DOI: 10.1103/Physrevb.47.4372 |
0.612 |
|
| 1993 |
Schmidt WG, Srivastava GP. Chemisorption of aluminium on GaAs(110) Journal of Physics: Condensed Matter. 5: 9025-9036. DOI: 10.1088/0953-8984/5/49/005 |
0.393 |
|
| 1993 |
Srivastava GP. Atomic geometry, electronic states and bonding at the GaP(11)-Sb(1 ML) interface Journal of Physics: Condensed Matter. 5: 4695-4710. DOI: 10.1088/0953-8984/5/27/014 |
0.451 |
|
| 1993 |
Ferraz AC, Srivastava GP. Atomic relaxation and electronic states in ultrathin Ge/ZnSe superlattices Semiconductor Science and Technology. 8: 67-72. DOI: 10.1088/0268-1242/8/1/011 |
0.405 |
|
| 1993 |
Ikonić Z, Srivastava G, Inkson JC. Calculation of x-valley intersubband optical transitions linewidth in [111] grown AlAs/(GaAl)As quantum wells Solid State Communications. 85: 327-330. DOI: 10.1016/0038-1098(93)90025-I |
0.612 |
|
| 1992 |
Ikonic Z, Srivastava GP, Inkson JC. Ordering of lowest conduction-band states in (GaAs)n/(AlAs)m Physical Review. B, Condensed Matter. 46: 15150-15155. PMID 10003629 DOI: 10.1103/Physrevb.46.15150 |
0.575 |
|
| 1992 |
Srivastava GP. Atomic geometries of InP(110)-Sb(1 ML) and GaAs(110)-Sb(1 ML) Physical Review B. 46: 7300-7303. PMID 10002458 DOI: 10.1103/Physrevb.46.7300 |
0.416 |
|
| 1992 |
Srivastava G. Parallel studies reconstruct silicon Physics World. 5: 20-21. DOI: 10.1088/2058-7058/5/5/21 |
0.328 |
|
| 1992 |
Srivastava GP, Martin RP. Electronic states on InP(110)-Sb(1 ML) Journal of Physics: Condensed Matter. 4: 2009-2026. DOI: 10.1088/0953-8984/4/8/015 |
0.411 |
|
| 1992 |
Ball MA, Srivastava GP. The derivation of pseudoatom information in germanium from total-energy calculations Journal of Physics: Condensed Matter. 4: 1947-1958. DOI: 10.1088/0953-8984/4/8/010 |
0.329 |
|
| 1992 |
Ikonic Z, Inkson JC, Srivastava GP. Ordering of conduction band states in (GaAs)n(AlAs)n [001] and [110] superlattices Semiconductor Science and Technology. 7: 648-653. DOI: 10.1088/0268-1242/7/5/005 |
0.572 |
|
| 1992 |
Ikonic Z, Srivastava GP, Inkson JC. Intersubband absorption line broadening in In0.53Ga0.47As/In0.52Al0.48As quantum wells: A pseudopotential calculation Solid State Communications. 81: 841-843. DOI: 10.1016/0038-1098(92)90549-O |
0.553 |
|
| 1992 |
Srivastava GP, Jones B. Ab‐Initio computer modeling of semiconductor surfaces Advanced Materials. 4: 482-489. DOI: 10.1002/Adma.19920040706 |
0.333 |
|
| 1991 |
Srivastava GP, Jones R. Computers calculate silicon surface structure Physics World. 4: 28-30. DOI: 10.1088/2058-7058/4/3/26 |
0.416 |
|
| 1991 |
Gordon RJ, Srivastava GP. Atomic and electronic structure of a monolayer ZnSe on the GaAs(110) surface Superlattices and Microstructures. 9: 47-50. DOI: 10.1016/0749-6036(91)90091-5 |
0.444 |
|
| 1991 |
Srivastava GP, Gordon RJ, Ikonic Z. Low lying conduction states in (GaAs)n(AlAs)n superlattices Superlattices and Microstructures. 9: 43-46. DOI: 10.1016/0749-6036(91)90090-E |
0.305 |
|
| 1990 |
Gordon RJ, Ikonic K, Srivastava GP. Nature of the lowest conduction band in thin GaAs/AlAs (110) superlattices Semiconductor Science and Technology. 5: 269-273. DOI: 10.1088/0268-1242/5/3/015 |
0.335 |
|
| 1990 |
Ikonić Z, Inkson J, Srivastava G. On level splitting by intervalley interference effects in semiconductor quantum wells Solid State Communications. 76: 117-119. DOI: 10.1016/0038-1098(90)90524-F |
0.601 |
|
| 1990 |
Ikonić Z, Inkson J, Srivastava G. On the linewidth of Γ- and X-valley intersubband optical transitions in semiconductor quantum wells Solid State Communications. 73: 421-424. DOI: 10.1016/0038-1098(90)90043-B |
0.551 |
|
| 1988 |
Srivastava GP, Martins JL, Zunger A. Erratum: Atomic structure and ordering in semiconductor alloys Physical Review B. 38: 12694-12694. PMID 9946225 DOI: 10.1103/Physrevb.38.12694 |
0.32 |
|
| 1988 |
Srivastava GP, Kunc K. Phonon dispersion in the (110) direction: a testing ground for phenomenological models of germanium Journal of Physics C: Solid State Physics. 21: 5087-5106. DOI: 10.1088/0022-3719/21/29/007 |
0.367 |
|
| 1988 |
Srivastava G. Electronic band structure of monolayer thin semiconductor superlattices Vacuum. 38: 233-236. DOI: 10.1016/0042-207X(88)90051-6 |
0.401 |
|
| 1987 |
Srivastava GP, Martins JL, Zunger A. Reply to "Comment on 'Atomic structure and ordering in semiconductor alloys' Physical Review B. 36: 2902-2905. PMID 9943183 DOI: 10.1103/Physrevb.36.2902 |
0.302 |
|
| 1987 |
Srivastava GP, Ferraz AC. The electronic band structure of (GaAs)n(AlAs)n and (GaAs)n(ZnSe)n superlattices Surface Science. 189: 913-918. DOI: 10.1016/S0039-6028(87)80528-9 |
0.319 |
|
| 1987 |
Srivastava GP, Ciraci S, Batra IP. π-bonded chain structure for Ge on Si(111) Surface Science. 183. DOI: 10.1016/S0039-6028(87)80328-X |
0.432 |
|
| 1987 |
Ferraz AC, Srivastava GP. Determination of the surface geometry of gaAs(110) by the total energy and force methods Surface Science. 182: 161-178. DOI: 10.1016/0039-6028(87)90094-X |
0.374 |
|
| 1986 |
Ferraz AC, Srivastava GP. The electronic band structure of (GaAs)n(AlAs)n superlattices Semiconductor Science and Technology. 1: 169-171. DOI: 10.1088/0268-1242/1/3/001 |
0.356 |
|
| 1986 |
Humphreys TP, Srivastava GP, Williams RH. Angle-resolved photo-emission from the cleaved (110) surface of cadmium telluride Journal of Physics C: Solid State Physics. 19: 1259-1271. DOI: 10.1088/0022-3719/19/8/022 |
0.374 |
|
| 1986 |
Ferraz AC, Srivastava GP. The atomic geometry of the ZnSe (110) surface: determination by total-energy methods Journal of Physics C: Solid State Physics. 19: 5987-5994. DOI: 10.1088/0022-3719/19/30/010 |
0.416 |
|
| 1985 |
Srivastava GP, Martins JL, Zunger A. Atomic structure and ordering in semiconductor alloys Physical Review B. 31: 2561-2564. PMID 9936089 DOI: 10.1103/Physrevb.31.2561 |
0.345 |
|
| 1983 |
Srivastava GP. Self-consistent non-local pseudopotential calculations for the ground-state properties of α-Sn Journal of Physics C: Solid State Physics. 16: 1649-1657. DOI: 10.1088/0022-3719/16/9/009 |
0.373 |
|
| 1983 |
Srivastava GP, Singh I, Montgomery V, Williams RH. The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theory Journal of Physics C: Solid State Physics. 16: 3627-3640. DOI: 10.1088/0022-3719/16/18/033 |
0.432 |
|
| 1982 |
Srivastava GP. Self-consistent pseudopotential calculation for the electronic structure of Ge Physical Review B. 25: 2815-2820. DOI: 10.1103/Physrevb.25.2815 |
0.405 |
|
| 1982 |
Srivastava GP. Electronic structure and total energy of Si, Ge and α-Sn by the self-consistent local pseudopotential method Journal of Physics C: Solid State Physics. 15: 707-719. DOI: 10.1088/0022-3719/15/4/017 |
0.41 |
|
| 1982 |
Srivastava GP. Self-consistent pseudopotential calculations for the electronic structure of bulk and (111) surface of α-Sn Journal of Physics C: Solid State Physics. 15: 699-706. DOI: 10.1088/0022-3719/15/4/016 |
0.442 |
|
| 1982 |
Srivastava GP. Self-consistent pseudopotential calculations of the equilibrium bulk properties of diamond-type semiconductors Journal of Physics C: Solid State Physics. 15. DOI: 10.1088/0022-3719/15/23/003 |
0.424 |
|
| 1982 |
Humphreys TP, Srivastava GP. Nonlocal Pseudopotential Calculations for Two Isoelectronic Series: Ge-GaAs-ZnSe and α-Sn-InSb-CdTe Physica Status Solidi B-Basic Solid State Physics. 112: 581-597. DOI: 10.1002/Pssb.2221120228 |
0.409 |
|
| 1981 |
Srivastava G, Singh I. Semiempirical pseudopotential calculation for the clean (110) surface of InP Vacuum. 31: 675-677. DOI: 10.1016/0042-207X(81)90090-7 |
0.462 |
|
| 1981 |
McKinley A, Williams R, Parke A, Srivastava G. Laser cleaned silicon surfaces—electronic structure and surface crystallography Vacuum. 31: 549-552. DOI: 10.1016/0042-207X(81)90062-2 |
0.424 |
|
| 1981 |
Singh I, Srivastava GP. Semiempirical Pseudopotential Calculations for the Electronic Structure of Zincblende Semiconductors Physica Status Solidi B-Basic Solid State Physics. 108: 467-473. DOI: 10.1002/Pssb.2221080222 |
0.436 |
|
| 1981 |
Humphreys TP, Srivastava GP. Electronic Charge Densities for Two Isoelectronic Series: Ge‐GaAs‐ZnSe and α‐Sn‐InSb‐CdTe Physica Status Solidi B-Basic Solid State Physics. 103. DOI: 10.1002/Pssb.2221030168 |
0.306 |
|
| 1980 |
Williams RH, Srivastava GP, McGovern IT. Photoelectron spectroscopy of solids and their surfaces Reports On Progress in Physics. 43: 1357-1414. DOI: 10.1088/0034-4885/43/12/001 |
0.406 |
|
| 1980 |
McKinley A, Srivastava GP, Williams RH. Angle resolved photoelectron spectroscopy-the cleaved (110) surface of indium phosphide Journal of Physics C: Solid State Physics. 13: 1581-1591. DOI: 10.1088/0022-3719/13/8/028 |
0.362 |
|
| 1980 |
Parke AW, McKinley A, Williams RH, Srivastava GP. The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium Journal of Physics C: Solid State Physics. 13. DOI: 10.1088/0022-3719/13/14/005 |
0.414 |
|
| 1980 |
Srivastava GP. A model pseudopotential calculation of the electronic structure of Si (111)-1 × 1 surface Solid State Communications. 33: 1209-1212. DOI: 10.1016/0038-1098(80)90792-9 |
0.483 |
|
| 1980 |
Srivastava GP. Phonon conductivity of insulators and semiconductors Journal of Physics and Chemistry of Solids. 41: 357-368. DOI: 10.1016/0038-1098(80)90461-5 |
0.314 |
|
| 1980 |
Parke AW, Srivastava GP. The Electronic Band Structure of SnS Physica Status Solidi B-Basic Solid State Physics. 101. DOI: 10.1002/Pssb.2221010153 |
0.366 |
|
| 1979 |
Srivastava GP. Electronic Structure of a Neutral Phosphorus Vacancy in GaP and InP Physica Status Solidi B-Basic Solid State Physics. 93: 761-765. DOI: 10.1002/Pssb.2220930234 |
0.414 |
|
| 1978 |
Srivastava GP. Electronic and optic properties of crystalline and amorphous Si Physica Status Solidi B-Basic Solid State Physics. 85. DOI: 10.1002/Pssb.2220850259 |
0.351 |
|
| 1977 |
Jaros M, Srivastava GP. Localized states in the presence of a phosphorus vacancy in GaP Journal of Physics and Chemistry of Solids. 38: 1399-1401. DOI: 10.1016/0022-3697(77)90015-4 |
0.327 |
|
| 1976 |
Srivastava GP. Calculation of lattice thermal conductivity of Ge from 4 to 900 K Philosophical Magazine. 34: 795-809. DOI: 10.1080/14786437608222052 |
0.349 |
|
| 1976 |
Srivastava GP. Calculations of anharmonic phonon relaxation times Pramana. 6: 1-18. DOI: 10.1007/Bf02846006 |
0.377 |
|
| 1976 |
Srivastava GP. Derivation and calculation of a sequence of lower‐bound results for lattice thermal conductivity Physica Status Solidi B-Basic Solid State Physics. 77: 131-140. DOI: 10.1002/Pssb.2220770111 |
0.304 |
|
| 1975 |
Srivastava GP. Calculation of bounds of the eigenvalue spectrum of anharmonic phonon collision operator Physics Letters A. 54: 222-224. DOI: 10.1016/0375-9601(75)90173-5 |
0.312 |
|
| 1974 |
Srivastava GP. Anharmonic relaxation of phonons Pramana. 3: 209-217. DOI: 10.1007/Bf02872240 |
0.32 |
|
| 1973 |
Srivastava GP, Verma GS. Separate contributions of longitudinal and transverse phonons towards the thermal conductivity of Ge in the Ziman limit Physical Review B. 7: 897-898. DOI: 10.1103/Physrevb.7.897 |
0.317 |
|
| 1971 |
Srivastava GP, Verma GS. Choice of trial function for the calculation of thermal resistivity due to electron phonon scattering Solid State Communications. 9: 2077-2080. DOI: 10.1016/0038-1098(71)90364-4 |
0.317 |
|
| Show low-probability matches. |