| Year |
Citation |
Score |
| 2019 |
Han K, Hu K, Li X, Huang K, Huang Z, Zeng S, Qi D, Ye C, Yang J, Xu H, Ariando A, Yi J, Lü W, Yan S, Wang XR. Erasable and recreatable two-dimensional electron gas at the heterointerface of SrTiO and a water-dissolvable overlayer. Science Advances. 5: eaaw7286. PMID 31453328 DOI: 10.1126/Sciadv.Aaw7286 |
0.683 |
|
| 2019 |
Song C, Yang S, Li X, Li X, Feng J, Pan A, Wang W, Xu Z, Bai X. Optically manipulated nanomechanics of semiconductor nanowires Chinese Physics B. 28: 054204. DOI: 10.1088/1674-1056/28/5/054204 |
0.506 |
|
| 2018 |
Qi J, Hu K, Li X. Electric Control of the Edge Magnetization in Zigzag Stanene Nanoribbons from First Principles Physical Review Applied. 10. DOI: 10.1103/Physrevapplied.10.034048 |
0.719 |
|
| 2017 |
Li P, Li X, Zhao W, Chen H, Chen MX, Guo ZX, Feng J, Gong X, McDonald A. Topological Dirac states beyond π orbitals for silicene on SiC(0001) surface. Nano Letters. PMID 28960082 DOI: 10.1021/Acs.Nanolett.7B02855 |
0.673 |
|
| 2015 |
Cai T, Li X, Wang F, Ju S, Feng J, Gong CD. Single-Spin Dirac Fermion and Chern Insulator Based on Simple Oxides. Nano Letters. PMID 26331338 DOI: 10.1021/Acs.Nanolett.5B01791 |
0.672 |
|
| 2015 |
Qi J, Li X, Niu Q, Feng J. Giant and tunable valley degeneracy splitting in MoTe2 Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.121403 |
0.597 |
|
| 2014 |
Li X, Zhang F, Niu Q, Feng J. Superlattice valley engineering for designer topological insulators. Scientific Reports. 4: 6397. PMID 25266885 DOI: 10.1038/Srep06397 |
0.639 |
|
| 2014 |
Qi J, Li X, Chen X, Hu K. Strain tuning of magnetism in Mn doped MoS2 monolayer. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 26: 256003. PMID 24899629 DOI: 10.1088/0953-8984/26/25/256003 |
0.694 |
|
| 2014 |
Li X, Liu H, Jiang H, Wang F, Feng J. Edge engineering of a topological Bi(111) bilayer Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.165412 |
0.58 |
|
| 2013 |
Wang Q, Ge S, Li X, Qiu J, Ji Y, Feng J, Sun D. Valley carrier dynamics in monolayer molybdenum disulfide from helicity-resolved ultrafast pump-probe spectroscopy. Acs Nano. 7: 11087-93. PMID 24224951 DOI: 10.1021/Nn405419H |
0.621 |
|
| 2013 |
Li X, Cao T, Niu Q, Shi J, Feng J. Coupling the valley degree of freedom to antiferromagnetic order. Proceedings of the National Academy of Sciences of the United States of America. 110: 3738-42. PMID 23435746 DOI: 10.1073/Pnas.1219420110 |
0.703 |
|
| 2013 |
Qi J, Li X, Qian X, Feng J. Bandgap engineering of rippled MoS2 monolayer under external electric field Applied Physics Letters. 102. DOI: 10.1063/1.4803803 |
0.511 |
|
| 2012 |
Li X, Feng J, Wang E, Meng S, Klime J, Michaelides A. Influence of water on the electronic structure of metal-supported graphene: Insights from van der Waals density functional theory Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.085425 |
0.517 |
|
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