| Year |
Citation |
Score |
| 2021 |
De Silva T, Damery C, Alkhaldi R, Karunanithy R, Gallaba DH, Patil PD, Wasala M, Sivakumar P, Migone A, Talapatra S. Carbon Nanotube Based Robust and Flexible Solid-State Supercapacitor. Acs Applied Materials & Interfaces. 13: 56004-56013. PMID 34792349 DOI: 10.1021/acsami.1c12551 |
0.326 |
|
| 2019 |
Patil PD, Ghosh S, Wasala M, Lei S, Vajtai R, Ajayan PM, Ghosh A, Talapatra S. Gate-Induced Metal-Insulator Transition in 2D Van der Waals Layers of Copper Indium Selenide (CuInSe) Based Field-Effect Transistors (FETs). Acs Nano. PMID 31661261 DOI: 10.1021/Acsnano.9B06846 |
0.376 |
|
| 2019 |
Patil PD, Ghosh S, Wasala M, Lei S, Vajtai R, Ajayan PM, Talapatra S. Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11) Electronics. 8: 645. DOI: 10.3390/Electronics8060645 |
0.391 |
|
| 2018 |
Ghosh S, Wasala M, Pradhan NR, Rhodes D, Patil PD, Fralaide M, Xin Y, McGill SA, Balicas L, Talapatra S. Low temperature photoconductivity of few layer p-type tungsten diselenide (WSe2) field-effect transistors (FETs). Nanotechnology. PMID 30203782 DOI: 10.1088/1361-6528/Aae049 |
0.346 |
|
| 2018 |
Huffstutler JD, Wasala M, Richie J, Barron J, Winchester A, Ghosh S, Yang C, Xu W, Song L, Kar S, Talapatra S. High Performance Graphene-Based Electrochemical Double Layer Capacitors Using 1-Butyl-1-methylpyrrolidinium tris (pentafluoroethyl) trifluorophosphate Ionic Liquid as an Electrolyte Electronics. 7: 229. DOI: 10.3390/Electronics7100229 |
0.343 |
|
| 2017 |
Al-Asadi AS, Henley LA, Wasala M, Muchharla B, Perea-Lopez N, Carozo V, Lin Z, Terrones M, Mondal K, Kordas K, Talapatra S. Aligned carbon nanotube/zinc oxide nanowire hybrids as high performance electrodes for supercapacitor applications Journal of Applied Physics. 121: 124303. DOI: 10.1063/1.4979098 |
0.316 |
|
| 2017 |
Wasala M, Sirikumara HI, Sapkota YR, Hofer S, Mazumdar D, Jayasekera T, Talapatra S. Recent advances in investigations of the electronic and optoelectronic properties of group III, IV, and V selenide based binary layered compounds Journal of Materials Chemistry C. 5: 11214-11225. DOI: 10.1039/C7Tc02866K |
0.339 |
|
| 2016 |
Wasala M, Zhang J, Ghosh S, Muchharla B, Malecek R, Mazumdar D, Samassekou H, Gaither-Ganim M, Morrison A, Lopez NP, Carozo V, Lin Z, Maldonado MT, Talapatra S. Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures - Erratum (Journal of Materials Research (2016) 31, 7, (893-899) DOI: 10.1557/jmr.2015.364) Journal of Materials Research. 31. DOI: 10.1557/Jmr.2016.129 |
0.312 |
|
| 2016 |
Wasala M, Zhang J, Ghosh S, Muchharla B, Malecek R, Mazumdar D, Samassekou H, Gaither-Ganim M, Morrison A, Lopez NP, Carozo V, Lin Z, Terrones M, Talapatra S. Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - boron nitride heterostructures Journal of Materials Research. 1-7. DOI: 10.1557/Jmr.2015.364 |
0.338 |
|
| 2015 |
Ghosh S, Winchester A, Muchharla B, Wasala M, Feng S, Elias AL, Krishna MB, Harada T, Chin C, Dani K, Kar S, Terrones M, Talapatra S. Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-gap States in Liquid Phase Exfoliated MoS2Thin Films. Scientific Reports. 5: 11272. PMID 26175112 DOI: 10.1038/Srep11272 |
0.311 |
|
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