☰

Elad Koren - Publications

Affiliations: 
Faculty of Materials Science and Technology Technion - Israel Institute of Technology, Haifa, Haifa District, Israel 
Tree Info Similar researchers PubMed Report error

12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Mukherjee S, Dutta D, Ghosh A, Koren E. Graphene-InSe van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation. Acs Nano. PMID 37930899 DOI: 10.1021/acsnano.3c03820  0.715
2023 Dutta D, Mukherjee S, Uzhansky M, Mohapatra PK, Ismach A, Koren E. Edge-Based Two-Dimensional α-InSe-MoS Ferroelectric Field Effect Device. Acs Applied Materials & Interfaces. PMID 37000129 DOI: 10.1021/acsami.3c00590  0.707
2022 Oz A, Dutta D, Nitzan A, Hod O, Koren E. Edge State Quantum Interference in Twisted Graphitic Interfaces. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2102261. PMID 35285174 DOI: 10.1002/advs.202102261  0.7
2022 Katznelson S, Cohn B, Sufrin S, Amit T, Mukherjee S, Kleiner V, Mohapatra P, Patsha A, Ismach A, Refaely-Abramson S, Hasman E, Koren E. Bright excitonic multiplexing mediated by dark exciton transition in two-dimensional TMDCs at room temperature. Materials Horizons. PMID 35083477 DOI: 10.1039/d1mh01186c  0.32
2021 Brill AR, Kafri A, Mohapatra PK, Ismach A, de Ruiter G, Koren E. Modulating the Optoelectronic Properties of MoS by Highly Oriented Dipole-Generating Monolayers. Acs Applied Materials & Interfaces. PMID 34190537 DOI: 10.1021/acsami.1c09035  0.405
2021 Hui F, Liu P, Hodge SA, Carey T, Wen C, Torrisi F, Galhena DTL, Tomarchio F, Lin Y, Moreno E, Roldan JB, Koren E, Ferrari AC, Lanza M. In Situ Observation of Low-Power Nano-Synaptic Response in Graphene Oxide Using Conductive Atomic Force Microscopy. Small (Weinheim An Der Bergstrasse, Germany). e2101100. PMID 34081416 DOI: 10.1002/smll.202101100  0.303
2021 Kafri A, Dutta D, Mukherjee S, Mohapatra PK, Ismach A, Koren E. Maskless Device Fabrication and Laser-Induced Doping in MoS Field Effect Transistors Using a Thermally Activated Cyclic Polyphthalaldehyde Resist. Acs Applied Materials & Interfaces. PMID 33464810 DOI: 10.1021/acsami.0c19194  0.7
2020 Mukherjee S, Dutta D, Mohapatra PK, Dezanashvili L, Ismach A, Koren E. Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional InSe. Acs Nano. PMID 33210905 DOI: 10.1021/acsnano.0c08146  0.707
2020 Dutta D, Oz A, Hod O, Koren E. The scaling laws of edge vs. bulk interlayer conduction in mesoscale twisted graphitic interfaces. Nature Communications. 11: 4746. PMID 32958749 DOI: 10.1038/s41467-020-18597-0  0.704
2019 Bessler R, Duerig U, Koren E. The dielectric constant of a bilayer graphene interface. Nanoscale Advances. 1: 1702-1706. PMID 36134207 DOI: 10.1039/c8na00350e  0.321
2016 Koren E, Leven I, Lörtscher E, Knoll A, Hod O, Duerig U. Coherent commensurate electronic states at the interface between misoriented graphene layers. Nature Nanotechnology. PMID 27271963 DOI: 10.1038/Nnano.2016.85  0.411
2010 Koren E, Berkovitch N, Rosenwaks Y. Measurement of active dopant distribution and diffusion in individual silicon nanowires. Nano Letters. 10: 1163-7. PMID 20196550 DOI: 10.1021/nl9033158  0.657
Show low-probability matches.