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Ramakrishna Vetury, Ph.D. - Publications

Affiliations: 
2000 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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37 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Ferrer-Pérez JA, Claflin B, Jena D, Sen M, Vetury R, Dorsey D. Photoluminescence-based electron and lattice temperature measurements in GaN-based HEMTs Journal of Electronic Materials. 43: 341-347. DOI: 10.1007/S11664-013-2841-3  0.525
2013 Choi S, Heller ER, Dorsey D, Vetury R, Graham S. The impact of bias conditions on self-heating in AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 60: 159-162. DOI: 10.1109/Ted.2012.2224115  0.4
2013 Runton DW, Trabert B, Shealy J, Vetury R. History of GaN: High-power RF gallium nitride (GaN) from infancy to manufacturable process and beyond Ieee Microwave Magazine. 14: 82-93. DOI: 10.1109/MMM.2013.2240853  0.44
2013 Heller E, Choi S, Dorsey D, Vetury R, Graham S. Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs Microelectronics Reliability. 53: 872-877. DOI: 10.1016/J.Microrel.2013.03.004  0.35
2012 Christiansen BD, Heller ER, Coutu RA, Vetury R, Shealy JB. A very robust AlGaN/GaN HEMT technology to high forward gate bias and current Active and Passive Electronic Components. 2012. DOI: 10.1155/2012/493239  0.304
2011 Heller ER, Vetury R, Green DS. Development of a versatile physics-based finite-element model of an AlGaN/GaN HEMT capable of accommodating process and epitaxy variations and calibrated using multiple DC parameters Ieee Transactions On Electron Devices. 58: 1091-1095. DOI: 10.1109/Ted.2011.2107913  0.542
2011 Christiansen BD, Coutu RA, Heller ER, Poling BS, David Via G, Vetury R, Shealy JB. Reliability testing of AlGaN/GaN HEMTs under multiple stressors Ieee International Reliability Physics Symposium Proceedings. CD.2.1-CD.2.5. DOI: 10.1109/IRPS.2011.5784556  0.364
2011 Hodge MD, Vetury R, Shealy J, Adams R. A robust AlGaN/GaN HEMT technology for RF switching applications Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2011.6062456  0.316
2011 Shealy JB, Vetury R, Trabert B, Runton D. A manufacturable, high power RF Gallium Nitride (GaN) technology portfolio with 65V operation and enhanced linearity 2011 Ieee International Conference On Microwaves, Communications, Antennas and Electronic Systems, Comcas 2011. DOI: 10.1109/COMCAS.2011.6105956  0.359
2010 Krishnamurthy K, Driver T, Vetury R, Martin J. 100 W GaN HEMT power amplifier module with > 60% efficiency over 100-1000 MHz bandwidth Ieee Mtt-S International Microwave Symposium Digest. 940-943. DOI: 10.1109/MWSYM.2010.5518242  0.363
2010 Krishnamurthy K, Lieu D, Vetury R, Martin J. A 0.1-1.8 GHz, 100 W GaN HEMT power amplifier module Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2010.5619612  0.361
2010 Fang ZQ, Claflin B, Look DC, Green DS, Vetury R. Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers Journal of Applied Physics. 108. DOI: 10.1063/1.3488610  0.547
2009 Krishnamurthy K, Green D, Vetury R, Poulton M, Martin J. 0.5-2.5 GHz, 10W MMIC power amplifier in GaN HEMT technology Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/csics.2009.5315739  0.608
2008 Green DS, Brown JD, Vetury R, Lee S, Gibb SR, Krishnamurthy K, Poulton MJ, Martin J, Shealy JB. Status of GaN HEMT performance and reliability Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.763781  0.648
2008 Lee S, Vetury R, Brown JD, Gibb SR, Cai WZ, Sun J, Green DS, Shealy J. Reliability assessment of AlGaN/GaN HEMT technology on SIC for 48V applications Ieee International Reliability Physics Symposium Proceedings. 446-449. DOI: 10.1109/RELPHY.2008.4558926  0.522
2008 Krishnamurthy K, Martin J, Landberg B, Vetury R, Poulton MJ. Wideband 400 W pulsed power GaN HEMT amplifiers Ieee Mtt-S International Microwave Symposium Digest. 303-306. DOI: 10.1109/MWSYM.2008.4633163  0.369
2008 Green DS, Vembu B, Hepper D, Gibb SR, Jin D, Vetury R, Shealy JB, Beechem LT, Graham S. GaN HEMT thermal behavior and implications for reliability testing and analysis Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2026-2029. DOI: 10.1002/Pssc.200778722  0.514
2008 Poulton MJ, Krishnamurthy K, Martin J, Landberg B, Vetury R, Alchele D. Wideband 400 w pulsed power gan amplifier Microwave Journal. 51: 130-138.  0.423
2007 Brown JD, Lee S, Lieu D, Martin J, Vetury R, Poulton MJ, Shealy JB. Voltage dependent characteristics of 48V AlGaN/GaN high electron mobility transistor technology on silicon carbide Ieee Mtt-S International Microwave Symposium Digest. 303-306. DOI: 10.1109/MWSYM.2007.380412  0.438
2007 Trew RJ, Liu Y, Bilbro GL, Kuang WW, Vetury R, Shealy JB. Space-charge limited current and nonlinear source resistance in microwave AlGaN/GaN HFET's 16th International Conference On Microwaves, Radar and Wireless Communications, Mikon 2006. DOI: 10.1109/MIKON.2006.4345093  0.398
2007 Krishnamurthy K, Poulton MJ, Martin J, Vetury R, Brown JD, Shealy JB. A 250W S-band GaN HEMT amplifier Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 44-47. DOI: 10.1109/CSICS07.2007.14  0.4
2006 Brown JD, Green DS, Gibb SR, Shealy JB, McKenna J, Poulton M, Lee S, Gratzer K, Hosse B, Mercier T, Yang Y, Young MG, Vetury R. Performance, reliability, and manufacturability of AlGaN/GaN high electron mobility transistors on silicon carbide substrates Ecs Transactions. 3: 161-179. DOI: 10.1149/1.2357206  0.609
2006 Poulton MJ, Leverich WK, Garber P, Shealy JB, Vetury R, Brown JD, Green DS, Gibb SR, Choi DK. AlGaN/GaN 120W WCDMA doherty amplifier with digital pre-distortion correction Ieee Wireless and Microwave Technology Conference, Wamicon 2006. DOI: 10.1109/WAMICON.2006.351919  0.552
2006 Trew RJ, Liu Y, Bilbro GL, Kuang W, Vetury R, Shealy JB. Nonlinear source resistance in high-voltage microwave alGaN/gaN HFETs Ieee Transactions On Microwave Theory and Techniques. 54: 2061-2066. DOI: 10.1109/Tmtt.2006.873627  0.383
2006 Vetury R, Shealy JB, Green DS, McKenna J, Brown JD, Gibb SR, Leverich K, Garber PM, Poulton MJ. Performance and RF reliability of GaN-on-SiC HEMT's using dual-gate architectures Ieee Mtt-S International Microwave Symposium Digest. 714-717. DOI: 10.1109/MWSYM.2006.249733  0.554
2006 Poulton MJ, Leverich WK, Shealy JB, Vetury R, Brown JD, Green DS, Gibb SR. Linearity and efficiency performance of GaN HEMTs with digital pre-distortion correction Ieee Mtt-S International Microwave Symposium Digest. 1327-1330. DOI: 10.1109/MWSYM.2006.249493  0.576
2006 Conlon JP, Zhang N, Poulton MJ, Shealy JB, Vetury R, Green DS, Brown JD, Gibb S. GaN wide band power integrated circuits Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 85-88. DOI: 10.1109/CSICS.2006.319885  0.595
2005 Vetury R, Wei Y, Green DS, Gibb SR, Mercier TW, Leverich K, Garber PM, Poulton MJ, Shealy JB. High power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications Ieee Mtt-S International Microwave Symposium Digest. 2005: 487-490. DOI: 10.1109/MWSYM.2005.1516636  0.606
2004 Green DS, Gibb SR, Hosse B, Vetury R, Grider DE, Smart JA. Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability Journal of Crystal Growth. 272: 285-292. DOI: 10.1016/J.Jcrysgro.2004.08.129  0.616
2001 Vetury R, Zhang NQ, Keller S, Misha UK. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs Ieee Transactions On Electron Devices. 48: 560-566. DOI: 10.1109/16.906451  0.425
2001 Keller S, Vetury R, Parish G, DenBaars SP, Mishra UK. Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors Applied Physics Letters. 78: 3088-3090. DOI: 10.1063/1.1372620  0.593
2000 Krishnamurthy K, Vetury R, Keller S, Mishra U, Rodwell MJW, Long SI. Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers Ieee Journal of Solid-State Circuits. 35: 1285-1292. DOI: 10.1109/4.868037  0.594
2000 Vetury R, Smorchkova IP, Elsass CR, Heying B, Keller S, Mishra UK. Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization Materials Research Society Symposium - Proceedings. 622: T251-T256.  0.422
2000 Mishra UK, Vetury R, McCarthy L, Smorchkova Y, Keller S, Xing H, Zhang N, Speck JS, York R, DenBaars S, Wu YF, Parikh P, Chavarkar P. AlGaN/GaN HEMTs and HBTs for microwave power Annual Device Research Conference Digest. 35-36.  0.702
1999 Parish G, Keller S, Fini PT, Vetury R, Chen CH, DenBaars SP, Mishra UK, Wu YF. MOCVD growth and properties of thin AlxGa1-xN layers on GaN Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 478-481.  0.555
1998 Chen CH, Keller S, Parish G, Vetury R, Kozodoy P, Hu EL, Denbaars SP, Mishra UK, Wu Y. High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts Applied Physics Letters. 73: 3147-3149. DOI: 10.1063/1.122701  0.576
1998 Vetury R, Wu YF, Fini PT, Parish G, Keller S, DenBaars SP, Mishra UK. Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors Technical Digest - International Electron Devices Meeting. 55-58.  0.574
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