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Debdeep Jena, Ph.D. - Publications

Affiliations: 
2003 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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307 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Geng Y, Luo J, van Deurzen L, Xing HG, Jena D, Fuchs GD, Rana F. Dephasing by optical phonons in GaN defect single-photon emitters. Scientific Reports. 13: 8678. PMID 37248283 DOI: 10.1038/s41598-023-35003-z  0.486
2022 Zhang Z, Hayashi Y, Tohei T, Sakai A, Protasenko V, Singhal J, Miyake H, Xing HG, Jena D, Cho Y. Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning. Science Advances. 8: eabo6408. PMID 36083903 DOI: 10.1126/sciadv.abo6408  0.5
2021 Yu T, Wright J, Khalsa G, Pamuk B, Chang CS, Matveyev Y, Wang X, Schmitt T, Feng D, Muller DA, Xing HG, Jena D, Strocov VN. Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction. Science Advances. 7: eabi5833. PMID 34936435 DOI: 10.1126/sciadv.abi5833  0.795
2021 Dang P, Khalsa G, Chang CS, Katzer DS, Nepal N, Downey BP, Wheeler VD, Suslov A, Xie A, Beam E, Cao Y, Lee C, Muller DA, Xing HG, Meyer DJ, ... Jena D, et al. An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity. Science Advances. 7. PMID 33608281 DOI: 10.1126/sciadv.abf1388  0.808
2021 Jinno R, Chang CS, Onuma T, Cho Y, Ho ST, Rowe D, Cao MC, Lee K, Protasenko V, Schlom DG, Muller DA, Xing HG, Jena D. Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)O on m-plane sapphire. Science Advances. 7. PMID 33523991 DOI: 10.1126/sciadv.abd5891  0.469
2020 Khan I, Fang Z, Palei M, Lu J, Nordin L, Simmons EL, Dominguez O, Islam SM, Xing HG, Jena D, Podolskiy VA, Wasserman D, Hoffman AJ. Engineering the Berreman mode in mid-infrared polar materials. Optics Express. 28: 28590-28599. PMID 32988126 DOI: 10.1364/Oe.401733  0.501
2020 Bharadwaj S, Miller J, Lee K, Lederman J, Siekacz M, Xing HG, Jena D, Skierbiszewski C, Turski H. Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes. Optics Express. 28: 4489-4500. PMID 32121684 DOI: 10.1364/Oe.384021  0.608
2020 Balasubramanian K, Wright J, Zohar O, Taitler B, Bouscher S, Xing HG, Jena D, Hayat A. Epitaxial superconducting tunnel diodes for light detection applications Optical Materials Express. 10: 1724-1732. DOI: 10.1364/Ome.395919  0.373
2020 Wei T, Islam SM, Jahn U, Yan J, Lee K, Bharadwaj S, Ji X, Wang J, Li J, Protasenko V, Xing H(, Jena D. GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy Optics Letters. 45: 121-124. DOI: 10.1364/Ol.45.000121  0.384
2020 Bader SJ, Lee H, Chaudhuri R, Huang S, Hickman A, Molnar A, Xing HG, Jena D, Then HW, Chowdhury N, Palacios T. Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices Ieee Transactions On Electron Devices. 1-11. DOI: 10.1109/Ted.2020.3010471  0.334
2020 Li W, Nomoto K, Hu Z, Jena D, Xing HG. Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃ Ieee Transactions On Electron Devices. 1-10. DOI: 10.1109/Ted.2020.3003292  0.341
2020 Fabris E, Santi CD, Caria A, Mukherjee K, Nomoto K, Hu Z, Li W, Gao X, Marchand H, Jena D, Xing HG, Meneghesso G, Zanoni E, Meneghini M. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction Ieee Transactions On Electron Devices. 1-5. DOI: 10.1109/Ted.2020.2993192  0.319
2020 Li L, Nomoto K, Pan M, Li W, Hickman A, Miller J, Lee K, Hu Z, Bader SJ, Lee SM, Hwang JCM, Jena D, Xing HG. GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz Ieee Electron Device Letters. 41: 689-692. DOI: 10.1109/Led.2020.2984727  0.552
2020 Li W, Nomoto K, Hu Z, Jena D, Xing HG. Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/$R_{\text{on,sp}}$ of up to 0.95 GW/cm2 Ieee Electron Device Letters. 41: 107-110. DOI: 10.1109/Led.2019.2953559  0.515
2020 Encomendero J, Protasenko V, Rana F, Jena D, Xing HG. Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics Physical Review Applied. 13. DOI: 10.1103/Physrevapplied.13.034048  0.539
2020 Singh A, Koksal O, Tanen N, McCandless J, Jena D, Xing H(, Peelaers H, Rana F. Intra- and inter-conduction band optical absorption processes in β-Ga2O3 Applied Physics Letters. 117: 72103. DOI: 10.1063/5.0016341  0.333
2020 Lee K, Bharadwaj S, Shao Y, van Deurzen L, Protasenko V, Muller DA, Xing HG, Jena D. Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look Applied Physics Letters. 117: 061104. DOI: 10.1063/5.0015097  0.429
2020 Casamento J, Chang CS, Shao Y, Wright J, Muller DA, Xing H(, Jena D. Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy Applied Physics Letters. 117: 112101. DOI: 10.1063/5.0013943  0.38
2020 Lee K, Cho Y, Schowalter LJ, Toita M, Xing HG, Jena D. Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates Applied Physics Letters. 116: 262102. DOI: 10.1063/5.0010813  0.359
2020 Bharadwaj S, Lee K, Nomoto K, Hickman A, Deurzen Lv, Protasenko V, Xing H(, Jena D. Bottom tunnel junction blue light-emitting field-effect transistors Applied Physics Letters. 117: 31107. DOI: 10.1063/5.0009430  0.377
2020 Li W, Saraswat D, Long Y, Nomoto K, Jena D, Xing HG. Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes Applied Physics Letters. 116: 192101. DOI: 10.1063/5.0007715  0.558
2020 Cho Y, Chang CS, Lee K, Gong M, Nomoto K, Toita M, Schowalter LJ, Muller DA, Jena D, Xing HG. Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning Applied Physics Letters. 116: 172106. DOI: 10.1063/1.5143968  0.516
2020 Casamento J, Holtz ME, Paik H, Dang P, Steinhardt R, Xing HG, Schlom DG, Jena D. Multiferroic LuFeO3 on GaN by molecular-beam epitaxy Applied Physics Letters. 116: 102901. DOI: 10.1063/1.5143322  0.409
2020 Park J, Paik H, Nomoto K, Lee K, Park B, Grisafe B, Wang L, Salahuddin S, Datta S, Kim Y, Jena D, Xing HG, Schlom DG. Fully transparent field-effect transistor with high drain current and on-off ratio Apl Materials. 8: 011110. DOI: 10.1063/1.5133745  0.588
2020 Chaney A, Turski H, Nomoto K, Hu Z, Encomendero J, Rouvimov S, Orlova T, Fay P, Seabaugh A, Xing HG, Jena D. Gallium nitride tunneling field-effect transistors exploiting polarization fields Applied Physics Letters. 116: 073502. DOI: 10.1063/1.5132329  0.615
2020 Zhang Z, Cho Y, Singhal J, Li X, Dang P, Lee H, Casamento J, Tang Y, Xing HG, Jena D. Magnetic properties of MBE grown Mn4N on MgO, SiC, GaN and Al2O3 substrates Aip Advances. 10: 015238. DOI: 10.1063/1.5130485  0.525
2020 Casamento J, Xing HG, Jena D. Oxygen Incorporation in the Molecular Beam Epitaxy Growth of Sc x Ga 1− x N and Sc x Al 1− x N Physica Status Solidi (B). 257: 1900612. DOI: 10.1002/Pssb.201900612  0.463
2020 Chaudhuri R, Bader SJ, Chen Z, Muller D, Xing HG, Jena D. Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures Physica Status Solidi (B). 257: 1900567. DOI: 10.1002/Pssb.201900567  0.521
2020 Miller J, Wright J, Xing HG, Jena D. All‐Epitaxial Bulk Acoustic Wave Resonators Physica Status Solidi (a). 217: 1900786. DOI: 10.1002/Pssa.201900786  0.435
2020 Meneghini M, Fabris E, Ruzzarin M, De Santi C, Nomoto K, Hu Z, Li W, Gao X, Jena D, Xing HG, Sun M, Palacios T, Meneghesso G, Zanoni E. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review Physica Status Solidi (a). 217: 1900750. DOI: 10.1002/Pssa.201900750  0.501
2019 Chaudhuri R, Bader SJ, Chen Z, Muller DA, Xing HG, Jena D. A polarization-induced 2D hole gas in undoped gallium nitride quantum wells. Science (New York, N.Y.). 365: 1454-1457. PMID 31604274 DOI: 10.1126/Science.Aau8623  0.571
2019 Poncé S, Jena D, Giustino F. Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting. Physical Review Letters. 123: 096602. PMID 31524479 DOI: 10.1103/Physrevlett.123.096602  0.408
2019 Cho Y, Ren Y, Xing HG, Jena D. High-mobility two-dimensional electron gases at AlGaN/GaN heterostructures grown on GaN bulk wafers and GaN template substrates Applied Physics Express. 12: 121003. DOI: 10.7567/1882-0786/Ab512C  0.439
2019 Li W, Nomoto K, Hu Z, Jena D, Xing HG. Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes Applied Physics Express. 12: 061007. DOI: 10.7567/1882-0786/Ab206C  0.523
2019 Yan R, Khalsa G, Schaefer BT, Jarjour A, Rouvimov S, Nowack KC, Xing HG, Jena D. Thickness dependence of superconductivity in ultrathin NbS2 Applied Physics Express. 12: 023008. DOI: 10.7567/1882-0786/Aaff89  0.554
2019 Cho Y, Bharadwaj S, Hu Z, Nomoto K, Jahn U, Xing HG, Jena D. Blue (In,Ga)N light-emitting diodes with buried n +–p + tunnel junctions by plasma-assisted molecular beam epitaxy Japanese Journal of Applied Physics. 58: 060914. DOI: 10.7567/1347-4065/Ab1E78  0.586
2019 Jena D, Page R, Casamento J, Dang P, Singhal J, Zhang Z, Wright J, Khalsa G, Cho Y, Xing HG. The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system Japanese Journal of Applied Physics. 58: SC0801. DOI: 10.7567/1347-4065/Ab147B  0.598
2019 Li W, Nomoto K, Sundar A, Lee K, Zhu M, Hu Z, Beam E, Xie J, Pilla M, Gao X, Rouvimov S, Jena D, Xing HG. Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms Japanese Journal of Applied Physics. 58: SCCD15. DOI: 10.7567/1347-4065/Ab0F1B  0.496
2019 Turski H, Siekacz M, Muzioł G, Hajdel M, Stańczyk S, Żak M, Chlipała M, Skierbiszewski C, Bharadwaj S, Xing HG, Jena D. Nitride LEDs and Lasers with Buried Tunnel Junctions Ecs Journal of Solid State Science and Technology. 9: 015018. DOI: 10.1149/2.0412001Jss  0.479
2019 Xing HG, Deen D, Cao Y, Zimmermann T, Fay P, Jena D. MBE-Grown Ultra-shallow AlN/GaN HFET Technology Ecs Transactions. 11: 233-237. DOI: 10.1149/1.2783877  0.449
2019 Fabris E, Meneghesso G, Zanoni E, Meneghini M, De Santi C, Caria A, Nomoto K, Hu Z, Li W, Gao X, Jena D, Xing HG. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes Ieee Transactions On Electron Devices. 66: 4597-4603. DOI: 10.1109/Ted.2019.2943014  0.588
2019 Hickman A, Chaudhuri R, Bader SJ, Nomoto K, Lee K, Xing HG, Jena D. High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs Ieee Electron Device Letters. 40: 1293-1296. DOI: 10.1109/Led.2019.2923085  0.603
2019 Dang P, Zhang Z, Casamento J, Li X, Singhal J, Schlom DG, Ralph DC, Xing HG, Jena D. Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 5: 158-165. DOI: 10.1109/Jxcdc.2019.2961333  0.342
2019 Afuye O, Li X, Guo F, Jena D, Ralph DC, Molnar A, Xing HG, Apsel A. Modeling and Circuit Design of Associative Memories With Spin–Orbit Torque FETs Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 5: 197-205. DOI: 10.1109/Jxcdc.2019.2952394  0.538
2019 Page R, Casamento J, Cho Y, Rouvimov S, Xing HG, Jena D. Rotationally aligned hexagonal boron nitride on sapphire by high-temperature molecular beam epitaxy Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.064001  0.573
2019 Poncé S, Jena D, Giustino F. Hole mobility of strained GaN from first principles Physical Review B. 100: 85204. DOI: 10.1103/Physrevb.100.085204  0.361
2019 Encomendero J, Protasenko V, Sensale-Rodriguez B, Fay P, Rana F, Jena D, Xing HG. Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.034032  0.516
2019 Casamento J, Wright J, Chaudhuri R, Xing H(, Jena D. Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN Applied Physics Letters. 115: 172101. DOI: 10.1063/1.5121329  0.588
2019 Dang P, Rouvimov S, Xing HG, Jena D. Magnetotransport and superconductivity in InBi films grown on Si(111) by molecular beam epitaxy Journal of Applied Physics. 126: 103901. DOI: 10.1063/1.5109542  0.513
2019 Cheng Z, Tanen N, Chang C, Shi J, McCandless J, Muller D, Jena D, Xing HG, Graham S. Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/Ga2O3 superlattices Applied Physics Letters. 115: 092105. DOI: 10.1063/1.5108757  0.551
2019 Mei AB, Tang Y, Schubert J, Jena D, Xing H(, Ralph DC, Schlom DG. Self-assembly and properties of domain walls in BiFeO3 layers grown via molecular-beam epitaxy Apl Materials. 7: 71101. DOI: 10.1063/1.5103244  0.315
2019 Bader SJ, Chaudhuri R, Schubert MF, Then HW, Xing HG, Jena D. Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas Applied Physics Letters. 114: 253501. DOI: 10.1063/1.5099957  0.57
2019 Xu RL, Muñoz Rojo M, Islam SM, Sood A, Vareskic B, Katre A, Mingo N, Goodson KE, Xing HG, Jena D, Pop E. Thermal conductivity of crystalline AlN and the influence of atomic-scale defects Journal of Applied Physics. 126: 185105. DOI: 10.1063/1.5097172  0.523
2019 Turski H, Bharadwaj S, Xing H(, Jena D. Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions Journal of Applied Physics. 125: 203104. DOI: 10.1063/1.5088041  0.383
2019 Bharadwaj S, Islam SM, Nomoto K, Protasenko V, Chaney A, Xing H(, Jena D. Bandgap narrowing and Mott transition in Si-doped Al0.7Ga0.3N Applied Physics Letters. 114: 113501. DOI: 10.1063/1.5086052  0.386
2019 Turski H, Krzyżewski F, Feduniewicz-Żmuda A, Wolny P, Siekacz M, Muziol G, Cheze C, Nowakowski-Szukudlarek K, Xing H(, Jena D, Załuska-Kotur M, Skierbiszewski C. Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface Applied Surface Science. 484: 771-780. DOI: 10.1016/J.Apsusc.2019.04.082  0.561
2018 Yan R, Khalsa G, Vishwanath S, Han Y, Wright J, Rouvimov S, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D. GaN/NbN epitaxial semiconductor/superconductor heterostructures. Nature. 555: 183-189. PMID 29516996 DOI: 10.1038/Nature25768  0.818
2018 Li W, Xing HG, Nomoto K, Lee K, Islam S, Hu Z, Zhu M, Gao X, Pilla M, Jena D. Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel Ieee Transactions On Electron Devices. 65: 2558-2564. DOI: 10.1109/Ted.2018.2829125  0.557
2018 Marin EG, Bader SJ, Jena D. A New Holistic Model of 2-D Semiconductor FETs Ieee Transactions On Electron Devices. 65: 1239-1245. DOI: 10.1109/Ted.2018.2797172  0.354
2018 Verma A, Song B, Downey B, Wheeler VD, Meyer DJ, Xing HG, Jena D. Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO2 Ieee Transactions On Electron Devices. 65: 945-949. DOI: 10.1109/Ted.2018.2795105  0.571
2018 Bader SJ, Chaudhuri R, Nomoto K, Hickman A, Chen Z, Then HW, Muller DA, Xing HG, Jena D. Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas Ieee Electron Device Letters. 39: 1848-1851. DOI: 10.1109/Led.2018.2874190  0.605
2018 Hu Z, Nomoto K, Li W, Tanen N, Sasaki K, Kuramata A, Nakamura T, Jena D, Xing HG. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV Ieee Electron Device Letters. 39: 869-872. DOI: 10.1109/Led.2018.2830184  0.572
2018 Koksal O, Tanen N, Jena D, Xing H(, Rana F. Measurement of ultrafast dynamics of photoexcited carriers inβ-Ga2O3by two-color optical pump-probe spectroscopy Applied Physics Letters. 113: 252102. DOI: 10.1063/1.5058164  0.33
2018 Li W, Hu Z, Nomoto K, Zhang Z, Hsu J, Thieu QT, Sasaki K, Kuramata A, Jena D, Xing HG. 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2 Applied Physics Letters. 113: 202101. DOI: 10.1063/1.5052368  0.588
2018 Li W, Nomoto K, Lee K, Islam SM, Hu Z, Zhu M, Gao X, Xie J, Pilla M, Jena D, Xing HG. Activation of buried p-GaN in MOCVD-regrown vertical structures Applied Physics Letters. 113: 062105. DOI: 10.1063/1.5041879  0.555
2018 Hu Z, Nomoto K, Li W, Zhang Z, Tanen N, Thieu QT, Sasaki K, Kuramata A, Nakamura T, Jena D, Xing HG. Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors Applied Physics Letters. 113: 122103. DOI: 10.1063/1.5038105  0.566
2018 Condori Quispe HO, Chanana A, Encomendero J, Zhu M, Trometer N, Nahata A, Jena D, Xing HG, Sensale-Rodriguez B. Comparison of unit cell coupling for grating‐gate and high electron mobility transistor array THz resonant absorbers Journal of Applied Physics. 124: 093101. DOI: 10.1063/1.5032102  0.553
2018 Encomendero J, Yan R, Verma A, Islam SM, Protasenko V, Rouvimov S, Fay P, Jena D, Xing HG. Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2 Applied Physics Letters. 112: 103101. DOI: 10.1063/1.5016414  0.565
2018 Liu C, Ooi YK, Islam SM, Xing H(, Jena D, Zhang J. 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes Applied Physics Letters. 112: 011101. DOI: 10.1063/1.5007835  0.375
2018 Fabris E, Meneghini M, Santi CD, Hu Z, Li W, Nomoto K, Gao X, Jena D, Xing HG, Meneghesso G, Zanoni E. Degradation of GaN-on-GaN vertical diodes submitted to high current stress Microelectronics Reliability. 568-571. DOI: 10.1016/J.Microrel.2018.06.041  0.404
2018 Vishwanath S, Sundar A, Liu X, Azcatl A, Lochocki E, Woll AR, Rouvimov S, Hwang WS, Lu N, Peng X, Lien H, Weisenberger J, McDonnell S, Kim MJ, Dobrowolska M, ... ... Jena D, et al. MBE growth of few-layer 2H-MoTe2 on 3D substrates Journal of Crystal Growth. 482: 61-69. DOI: 10.1016/J.Jcrysgro.2017.10.024  0.561
2017 Zubair A, Nourbakhsh A, Hong JY, Qi M, Song Y, Jena D, Kong J, Dresselhaus MS, Palacios T. Hot electron transistor with van der Waals base-collector heterojunction and high performance GaN emitter. Nano Letters. PMID 28414241 DOI: 10.1021/Acs.Nanolett.7B00451  0.427
2017 Zhang L, Verma A, Xing H(, Jena D. Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3 Japanese Journal of Applied Physics. 56: 030304. DOI: 10.7567/Jjap.56.030304  0.308
2017 Bothwell B, Drummond D, Pilla M, Xing H, Jena D, Cohn G. VERTICAL GAN TRANSISTORS: THE EFFECTIVE SOLUTIONS FOR POWER ELECTRONICS Electronics: Science, Technology, Business. 2: 92-96. DOI: 10.22184/1992-4178.2017.162.2.92.96  0.473
2017 Liu C, Ooi YK, Islam SM, Xing HG, Jena D, Zhang J. Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes Proceedings of Spie. 10104. DOI: 10.1117/12.2252487  0.439
2017 Li W, Nomoto K, Pilla M, Pan M, Gao X, Jena D, Xing HG. Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes Ieee Transactions On Electron Devices. 64: 1635-1641. DOI: 10.1109/Ted.2017.2662702  0.589
2017 Hu Z, Nomoto K, Qi M, Li W, Zhu M, Gao X, Jena D, Xing HG. 1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy Ieee Electron Device Letters. 38: 1071-1074. DOI: 10.1109/Led.2017.2720747  0.575
2017 Encomendero J, Faria FA, Islam S, Protasenko V, Rouvimov S, Sensale-Rodriguez B, Fay P, Jena D, Xing HG. New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes Physical Review X. 7. DOI: 10.1103/Physrevx.7.041017  0.567
2017 Paik H, Chen Z, Lochocki E, Seidner H. A, Verma A, Tanen N, Park J, Uchida M, Shang S, Zhou B, Brützam M, Uecker R, Liu Z, Jena D, Shen KM, et al. Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy Apl Materials. 5: 116107. DOI: 10.1063/1.5001839  0.347
2017 Islam SM, Protasenko V, Lee K, Rouvimov S, Verma J, Xing H(, Jena D. Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures Applied Physics Letters. 111: 091104. DOI: 10.1063/1.5000844  0.543
2017 Condori Quispe H, Islam SM, Bader S, Chanana A, Lee K, Chaudhuri R, Nahata A, Xing HG, Jena D, Sensale-Rodriguez B. Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells Applied Physics Letters. 111: 073102. DOI: 10.1063/1.4996925  0.403
2017 Cho Y, Hu Z, Nomoto K, Xing HG, Jena D. Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy Applied Physics Letters. 110: 253506. DOI: 10.1063/1.4989581  0.591
2017 Zhu M, Qi M, Nomoto K, Hu Z, Song B, Pan M, Gao X, Jena D, Xing HG. Electron mobility in polarization-doped Al0-0.2GaN with a low concentration near 1017 cm−3 Applied Physics Letters. 110: 182102. DOI: 10.1063/1.4982920  0.59
2017 Liu C, Ooi YK, Islam SM, Verma J, Xing H(, Jena D, Zhang J. Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light-emitting diodes Applied Physics Letters. 110: 071103. DOI: 10.1063/1.4976203  0.415
2017 Qi M, Li G, Ganguly S, Zhao P, Yan X, Verma J, Song B, Zhu M, Nomoto K, Xing HG, Jena D. Strained GaN quantum-well FETs on single crystal bulk AlN substrates Applied Physics Letters. 110: 63501. DOI: 10.1063/1.4975702  0.437
2017 Islam SM, Lee K, Verma J, Protasenko V, Rouvimov S, Bharadwaj S, (Grace) Xing H, Jena D. MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures Applied Physics Letters. 110: 041108. DOI: 10.1063/1.4975068  0.379
2017 Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, et al. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Advanced Electronic Materials. 4: 1600501. DOI: 10.1002/Aelm.201600501  0.631
2016 Gupta P, Rahman AA, Subramanian S, Gupta S, Thamizhavel A, Orlova T, Rouvimov S, Vishwanath S, Protasenko V, Laskar MR, Xing HG, Jena D, Bhattacharya A. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth. Scientific Reports. 6: 23708. PMID 27025461 DOI: 10.1038/Srep23708  0.569
2016 Park JH, Vishwanath S, Liu X, Zhou H, Eichfeld SM, Fullerton-Shirey SK, Robinson JA, Feenstra RM, Furdyna J, Jena D, Xing HG, Kummel AC. Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers. Acs Nano. PMID 26991824 DOI: 10.1021/Acsnano.5B07698  0.512
2016 Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. Sub-230nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.05Ff06  0.55
2016 Islam SM, Protasenko V, Rouvimov S, Xing HG, Jena D. High-quality InN films on GaN using graded InGaN buffers by MBE Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.05Fd12  0.522
2016 Vishwanath S, Liu X, Rouvimov S, Basile L, Lu N, Azcatl A, Magno K, Wallace RM, Kim M, Idrobo JC, Furdyna JK, Jena D, Xing HG. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy Journal of Materials Research. 1-11. DOI: 10.1557/Jmr.2015.374  0.554
2016 Nomoto K, Song B, Hu Z, Zhu M, Qi M, Kaneda N, Mishima T, Nakamura T, Jena D, Xing HG. 1.7-kV and 0.55-mΩ cm2 GaN p-n diodes on bulk GaN substrates with avalanche capability Ieee Electron Device Letters. 37: 161-164. DOI: 10.1109/Led.2015.2506638  0.561
2016 Song B, Zhu M, Hu Z, Qi M, Nomoto K, Yan X, Cao Y, Jena D, Xing HG. Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si with Non-Alloyed Regrown Ohmic Contacts Ieee Electron Device Letters. 37: 16-19. DOI: 10.1109/Led.2015.2497252  0.572
2016 Nomoto K, Hu Z, Song B, Zhu M, Qi M, Yan R, Protasenko V, Imhoff E, Kuo J, Kaneda N, Mishima T, Nakamura T, Jena D, Xing HG. GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mω•cm2: A record high figure-of-merit of 12.8 GW/cm2 Technical Digest - International Electron Devices Meeting, Iedm. 2016: 9.7.1-9.7.4. DOI: 10.1109/IEDM.2015.7409665  0.52
2016 Song B, Verma AK, Nomoto K, Zhu M, Jena D, Xing HG. Vertical Ga2O3 Schottky barrier diodes on single-crystal β-Ga2O3 (-201) substrates Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548440  0.553
2016 Chaney A, Qi M, Islam SM, Xing HG, Jena D. GaN tunnel switch diodes Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548409  0.544
2016 Verma A, Song B, Meyer D, Downey B, Wheeler V, Xing HG, Jena D. Demonstration of GaN HyperFETs with ALD VO2 Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548397  0.543
2016 Bayerl D, Islam S, Jones CM, Protasenko V, Jena D, Kioupakis E. Deep ultraviolet emission from ultra-thin GaN/AlN heterostructures Applied Physics Letters. 109: 241102. DOI: 10.1063/1.4971968  0.425
2016 Ma N, Tanen N, Verma A, Guo Z, Luo T, Xing H(, Jena D. Intrinsic electron mobility limits inβ-Ga2O3 Applied Physics Letters. 109: 212101. DOI: 10.1063/1.4968550  0.427
2016 Verma A, Nomoto K, Hwang WS, Raghavan S, Stemmer S, Jena D. Large electron concentration modulation using capacitance enhancement in SrTiO3/SmTiO3 Fin-field effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4948770  0.441
2016 Dong S, Liu X, Li X, Kanzyuba V, Yoo T, Rouvimov S, Vishwanath S, Xing HG, Jena D, Dobrowolska M, Furdyna JK. Room temperature weak ferromagnetism in Sn1-xMnxSe2 2D films grown by molecular beam epitaxy Apl Materials. 4. DOI: 10.1063/1.4942637  0.504
2016 Chhowalla M, Jena D, Zhang H. Two-dimensional semiconductors for transistors Nature Reviews Materials. 1. DOI: 10.1038/Natrevmats.2016.52  0.368
2016 Kanzyuba V, Dong S, Li X, Yoo T, Liu X, Rouvimov S, Vishwanath S, Jena D, Xing H, Dobrowolska M, Furdyna JK. Structural Properties of (Sn,Mn)Se 2 - a New 2D Magnetic Semiconductor with Potential for Spintronic Applications Microscopy and Microanalysis. 22: 1512-1513. DOI: 10.1017/S1431927616008400  0.482
2015 Yan R, Fathipour S, Han Y, Song B, Xiao S, Li M, Ma N, Protasenko V, Muller DA, Jena D, Xing HG. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters. PMID 26226296 DOI: 10.1021/Acs.Nanolett.5B01792  0.607
2015 Xing HG, Yan R, Song B, Encomendero J, Jena D. THz devices based on 2D electron systems Proceedings of Spie - the International Society For Optical Engineering. 9476. DOI: 10.1117/12.2185117  0.565
2015 Jena D, Li M, Ma N, Hwang WS, Esseni D, Seabaugh A, Xing HG. Electron transport in 2D crystal semiconductors and their device applications 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348543  0.531
2015 Song B, Zhu M, Hu Z, Qi M, Yan X, Cao Y, Kohn E, Jena D, Xing HG. AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing < 60 mV/dec over 6 orders of drain current swing and relation to traps 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348527  0.518
2015 Zhu M, Song B, Qi M, Hu Z, Nomoto K, Yan X, Cao Y, Johnson W, Kohn E, Jena D, Xing HG. 1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon Ieee Electron Device Letters. 36: 375-377. DOI: 10.1109/Led.2015.2404309  0.37
2015 Jana RK, Ajoy A, Snider G, Jena D. Transistor Switches Using Active Piezoelectric Gate Barriers Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 35-42. DOI: 10.1109/Jxcdc.2015.2448412  0.359
2015 Li W, Sharmin S, Ilatikhameneh H, Rahman R, Lu Y, Wang J, Yan X, Seabaugh A, Klimeck G, Jena D, Fay P. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 28-34. DOI: 10.1109/Jxcdc.2015.2426433  0.422
2015 Li MO, Esseni D, Nahas JJ, Jena D, Xing HG. Two-dimensional heterojunction interlayer tunneling field effect transistors (Thin-TFETs) Ieee Journal of the Electron Devices Society. 3: 200-207. DOI: 10.1109/Jeds.2015.2390643  0.585
2015 Song B, Zhu M, Hu Z, Nomoto K, Jena D, Xing H. Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2015: 273-276. DOI: 10.1109/ISPSD.2015.7123442  0.462
2015 Liu X, Li X, Vishwanath S, Dong S, Yoo T, Jena D, Xing H, Dobrowolska M, Furdyna JK. MBE-grown Mn-doped SnSe2 2D films on GaAs (111)B substrates 2015 Ieee International Magnetics Conference, Intermag 2015. DOI: 10.1109/INTMAG.2015.7156850  0.445
2015 Islam SM, Protasenko V, Rouvimov S, Verma J, Xing H, Jena D. Deep-UV LEDs using polarization-induced doping: Electroluminescence at cryogenic temperatures Device Research Conference - Conference Digest, Drc. 2015: 67-68. DOI: 10.1109/DRC.2015.7175559  0.465
2015 Xing HG, Song B, Zhu M, Hu Z, Qi M, Nomoto K, Jena D. Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits Device Research Conference - Conference Digest, Drc. 2015: 51-52. DOI: 10.1109/DRC.2015.7175549  0.487
2015 Qi M, Namoto K, Zhu M, Hu Z, Zhao Y, Song B, Li G, Fay P, Xing H, Jena D. High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates Device Research Conference - Conference Digest, Drc. 2015: 31-32. DOI: 10.1109/DRC.2015.7175537  0.523
2015 Vishwanath S, Liu X, Rouvimov S, Mende PC, Azcatl A, McDonnell S, Wallace RM, Feenstra RM, Furdyna JK, Jena D, Xing HG. Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene 2d Materials. 2. DOI: 10.1088/2053-1583/2/2/024007  0.434
2015 Maand N, Jena D. Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors 2d Materials. 2. DOI: 10.1088/2053-1583/2/1/015003  0.399
2015 Hu Z, Nomoto K, Song B, Zhu M, Qi M, Pan M, Gao X, Protasenko V, Jena D, Xing HG. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Applied Physics Letters. 107. DOI: 10.1063/1.4937436  0.591
2015 Qi M, Nomoto K, Zhu M, Hu Z, Zhao Y, Protasenko V, Song B, Yan X, Li G, Verma J, Bader S, Fay P, Xing HG, Jena D. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4936891  0.59
2015 Verma A, Raghavan S, Stemmer S, Jena D. Ferroelectric transition in compressively strained SrTiO3 thin films Applied Physics Letters. 107. DOI: 10.1063/1.4935592  0.332
2015 Yan X, Li W, Islam SM, Pourang K, Xing H, Fay P, Jena D. Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions Applied Physics Letters. 107. DOI: 10.1063/1.4934269  0.425
2015 Feng K, Streyer W, Islam SM, Verma J, Jena D, Wasserman D, Hoffman AJ. Localized surface phonon polariton resonances in polar gallium nitride Applied Physics Letters. 107. DOI: 10.1063/1.4929502  0.364
2015 Qi M, Li G, Protasenko V, Zhao P, Verma J, Song B, Ganguly S, Zhu M, Hu Z, Yan X, Mintairov A, Xing HG, Jena D. Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes Applied Physics Letters. 106. DOI: 10.1063/1.4906900  0.558
2015 Fathipour S, Remskar M, Varlec A, Ajoy A, Yan R, Vishwanath S, Rouvimov S, Hwang WS, Xing HG, Jena D, Seabaugh A. Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors Applied Physics Letters. 106. DOI: 10.1063/1.4906066  0.588
2015 Hwang WS, Zhao P, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Robinson JA, Haensch W, Xing H, Seabaugh A, Jena D. Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates Apl Materials. 3. DOI: 10.1063/1.4905155  0.581
2015 Faria FA, Nomoto K, Hu Z, Rouvimov S, Xing H, Jena D. Low temperature AlN growth by MBE and its application in HEMTs Journal of Crystal Growth. 425: 133-137. DOI: 10.1016/J.Jcrysgro.2015.03.039  0.546
2014 Jena D, Banerjee K, Xing GH. 2D crystal semiconductors: Intimate contacts. Nature Materials. 13: 1076-8. PMID 25410976 DOI: 10.1038/Nmat4121  0.36
2014 Ganguly S, Verma J, Xing H, Jena D. Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts Applied Physics Express. 7. DOI: 10.7567/Apex.7.105501  0.617
2014 Ganguly S, Verma J, Hu Z, Xing H, Jena D. Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment Applied Physics Express. 7. DOI: 10.7567/Apex.7.034102  0.425
2014 Hu Z, Yue Y, Zhu M, Song B, Ganguly S, Bergman J, Jena D, Xing HG. Impact of CF4 plasma treatment on threshold voltage and mobility in Al 2O3/InAlN/GaN MOSHEMTs Applied Physics Express. 7. DOI: 10.7567/Apex.7.031002  0.571
2014 Esseni D, Pala MG, Revelant A, Palestri P, Selmi L, Li M, Snider G, Jena D, Xing HG. Challenges and opportunities in the design of Tunnel FETs: Materials, device architectures, and defects Ecs Transactions. 64: 581-595. DOI: 10.1149/06406.0581ecst  0.453
2014 Verma JK, Protasenko VV, Islam SM, Xing H, Jena D. Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2037132  0.567
2014 Yue Y, Yan X, Li W, Xing HG, Jena D, Fay P. Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4896592  0.515
2014 Hwang WS, Tahy K, Zhao P, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Kurt Gaskill D, Xing H, Seabaugh A, Jena D. Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4861379  0.443
2014 Zhang Q, Lu Y, Richter CA, Jena D, Seabaugh A. Optimum bandgap and supply voltage in tunnel FETs Ieee Transactions On Electron Devices. 61: 2719-2724. DOI: 10.1109/Ted.2014.2330805  0.403
2014 Song B, Sensale-Rodriguez B, Wang R, Guo J, Hu Z, Yue Y, Faria F, Schuette M, Ketterson A, Beam E, Saunier P, Gao X, Guo S, Fay P, Jena D, et al. Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates Ieee Transactions On Electron Devices. 61: 747-754. DOI: 10.1109/Ted.2014.2299810  0.564
2014 Zhao P, Verma A, Verma J, Xing HG, Fay P, Jena D. GaN heterostructure barrier diodes exploiting polarization-induced δ-doping Ieee Electron Device Letters. 35: 615-617. DOI: 10.1109/Led.2014.2316140  0.614
2014 Xiao S, Li M, Seabaugh A, Jena D, Xing HG. Vertical heterojunction of MoS2 and WSe2 Device Research Conference - Conference Digest, Drc. 169-170. DOI: 10.1109/DRC.2014.6872351  0.511
2014 Song B, Zhu M, Hu Z, Kohn E, Jena D, Xing HG. GaN lateral PolarSJs: Polarization-doped super junctions Device Research Conference - Conference Digest, Drc. 99-100. DOI: 10.1109/DRC.2014.6872316  0.576
2014 Hu Z, Jana R, Qi M, Ganguly S, Song B, Kohn E, Jena D, Xing HG. Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region Device Research Conference - Conference Digest, Drc. 27-28. DOI: 10.1109/DRC.2014.6872283  0.431
2014 Li MO, Esseni D, Jena D, Xing HG. Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET) Device Research Conference - Conference Digest, Drc. 17-18. DOI: 10.1109/DRC.2014.6872278  0.484
2014 Kang J, Liu W, Sarkar D, Jena D, Banerjee K. Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors Physical Review X. 4. DOI: 10.1103/Physrevx.4.031005  0.348
2014 Ma N, Jena D. Charge scattering and mobility in atomically thin semiconductors Physical Review X. 4. DOI: 10.1103/Physrevx.4.011043  0.382
2014 Verma A, Kajdos AP, Cain TA, Stemmer S, Jena D. Intrinsic mobility limiting mechanisms in lanthanum-doped strontium titanate Physical Review Letters. 112. DOI: 10.1103/Physrevlett.112.216601  0.347
2014 Yan Q, Kioupakis E, Jena D, Van De Walle CG. First-principles study of high-field-related electronic behavior of group-III nitrides Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.121201  0.371
2014 Fathipour S, Ma N, Hwang WS, Protasenko V, Vishwanath S, Xing HG, Xu H, Jena D, Appenzeller J, Seabaugh A. Exfoliated multilayer MoTe2 field-effect transistors Applied Physics Letters. 105. DOI: 10.1063/1.4901527  0.579
2014 Verma A, Raghavan S, Stemmer S, Jena D. Au-gated SrTiO3field-effect transistors with large electron concentration and current modulation Applied Physics Letters. 105. DOI: 10.1063/1.4896275  0.434
2014 Hwang WS, Verma A, Peelaers H, Protasenko V, Rouvimov S, Xing H, Seabaugh A, Haensch W, De Walle CV, Galazka Z, Albrecht M, Fornari R, Jena D. High-voltage field effect transistors with wide-bandgap β -Ga 2O3 nanomembranes Applied Physics Letters. 104. DOI: 10.1063/1.4879800  0.559
2014 Hwan Lee S, Lee D, Sik Hwang W, Hwang E, Jena D, Jong Yoo W. High-performance photocurrent generation from two-dimensional WS 2 field-effect transistors Applied Physics Letters. 104. DOI: 10.1063/1.4878335  0.413
2014 Li G, Song B, Ganguly S, Zhu M, Wang R, Yan X, Verma J, Protasenko V, Grace Xing H, Jena D. Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN Applied Physics Letters. 104. DOI: 10.1063/1.4875916  0.443
2014 Huang CY, Law JJM, Lu H, Jena D, Rodwell MJW, Gossard AC. Two dimensional electron transport in modulation-doped In 0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells Journal of Applied Physics. 115. DOI: 10.1063/1.4869498  0.391
2014 Li M, Esseni D, Snider G, Jena D, Grace Xing H. Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor Journal of Applied Physics. 115. DOI: 10.1063/1.4866076  0.387
2014 Verma J, Islam SM, Protasenko V, Kumar Kandaswamy P, Xing H, Jena D. Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4862064  0.595
2014 Vishwanath S, Rouvimov S, Orlova T, Liu X, Furdyna JK, Jena D, Xing HG. Atomic structure of thin MoSe2 films grown by molecular beam epitaxy Microscopy and Microanalysis. 20: 164-165. DOI: 10.1017/S1431927614002542  0.479
2014 Ritchie A, Eger S, Wright C, Chelladurai D, Borrowman C, Olovsson W, Magnuson M, Verma J, Jena D, Xing HG, Dubuc C, Urquhart S. Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride Applied Surface Science. 316: 232-236. DOI: 10.1016/J.Apsusc.2014.07.070  0.489
2014 Ferrer-Pérez JA, Claflin B, Jena D, Sen M, Vetury R, Dorsey D. Photoluminescence-based electron and lattice temperature measurements in GaN-based HEMTs Journal of Electronic Materials. 43: 341-347. DOI: 10.1007/S11664-013-2841-3  0.717
2014 Ganguly S, Song B, Hwang WS, Hu Z, Zhu M, Verma J, Xing HG, Jena D. AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 887-889. DOI: 10.1002/Pssc.201300668  0.569
2014 Islam SM, Protasenko V, Xing HG, Jena D, Verma J. Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy Optics Infobase Conference Papers.  0.483
2014 Islam SM, Protasenko V, Xing HG, Jena D, Verma J. Temperature dependence of sub-220nm emission from GaN/AlN quantum structures by plasma assisted molecular beam epitaxy Optics Infobase Conference Papers.  0.476
2013 Chang HY, Yang S, Lee J, Tao L, Hwang WS, Jena D, Lu N, Akinwande D. High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. Acs Nano. 7: 5446-52. PMID 23668386 DOI: 10.1021/Nn401429W  0.392
2013 Liu W, Kang J, Sarkar D, Khatami Y, Jena D, Banerjee K. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. Nano Letters. 13: 1983-90. PMID 23527483 DOI: 10.1021/Nl304777E  0.428
2013 Sensale-Rodriguez B, Rafique S, Yan R, Zhu M, Protasenko V, Jena D, Liu L, Xing HG. Terahertz imaging employing graphene modulator arrays. Optics Express. 21: 2324-30. PMID 23389211 DOI: 10.1364/Oe.21.002324  0.5
2013 Shi H, Yan R, Bertolazzi S, Brivio J, Gao B, Kis A, Jena D, Xing HG, Huang L. Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals. Acs Nano. 7: 1072-80. PMID 23273148 DOI: 10.1021/Nn303973R  0.553
2013 Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, Grace H. Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400GHz Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn14  0.419
2013 Wang R, Li G, Karbasian G, Guo J, Faria F, Hu Z, Yue Y, Verma J, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz Applied Physics Express. 6. DOI: 10.7567/Apex.6.016503  0.421
2013 Jena D. New generation transistor technologies enabled by 2D crystals Proceedings of Spie - the International Society For Optical Engineering. 8725. DOI: 10.1117/12.2018450  0.369
2013 Sensale-Rodríguez B, Liu L, Fay P, Jena D, Xing HG. Power amplification at THz via plasma wave excitation in RTD-gated HEMTs Ieee Transactions On Terahertz Science and Technology. 3: 200-206. DOI: 10.1109/Tthz.2012.2235909  0.543
2013 Li G, Wang R, Song B, Verma J, Cao Y, Ganguly S, Verma A, Guo J, Xing HG, Jena D. Polarization-induced GaN-on-insulator E/D Mode p-channel heterostructure FETs Ieee Electron Device Letters. 34: 852-854. DOI: 10.1109/Led.2013.2264311  0.576
2013 Wang R, Li G, Karbasian G, Guo J, Song B, Yue Y, Hu Z, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing HG. Quaternary barrier InAlGaN HEMTs with fTfmax of 230/300 GHz Ieee Electron Device Letters. 34: 378-380. DOI: 10.1109/Led.2013.2238503  0.443
2013 Sensale-Rodriguez B, Yan R, Liu L, Jena D, Xing HG. Graphene for reconfigurable terahertz optoelectronics Proceedings of the Ieee. 101: 1705-1716. DOI: 10.1109/JPROC.2013.2250471  0.471
2013 Sensale-Rodriguez B, Zhao P, Jena D, Xing HG. Perspectives of graphene SymFETs for THz applications International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2013.6665853  0.493
2013 Wang R, Li G, Guo J, Song B, Verma J, Hu Z, Yue Y, Nomoto K, Ganguly S, Rouvimov S, Gao X, Laboutin O, Cao Y, Johnson W, Fay P, ... Jena D, et al. Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation Technical Digest - International Electron Devices Meeting, Iedm. 28.6.1-28.6.4. DOI: 10.1109/IEDM.2013.6724712  0.379
2013 Liu W, Kang J, Cao W, Sarkar D, Khatami Y, Jena D, Banerjee K. High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance Technical Digest - International Electron Devices Meeting, Iedm. 19.4.1-19.4.4. DOI: 10.1109/IEDM.2013.6724660  0.316
2013 Hwang WS, Verma A, Protasenko V, Rouvimov S, Xing HG, Seabaugh A, Haensch W, Van De Walle C, Galazka Z, Albrecht M, Forrnari R, Jena D. Nanomembrane β-Ga2O3 high-voltage field effect transistors Device Research Conference - Conference Digest, Drc. 207-208. DOI: 10.1109/DRC.2013.6633866  0.442
2013 Zhao P, Verma A, Verma J, Xing H, Fay P, Jena D. GaN heterostructure barrier diodes (HBD) with polarization-induced delta-doping Device Research Conference - Conference Digest, Drc. 203-204. DOI: 10.1109/DRC.2013.6633864  0.512
2013 Fathipour S, Hwang WS, Kosel T, Xing HG, Haensch W, Jena D, Seabaugh A. Exfoliated MoTe2 field-effect transistor Device Research Conference - Conference Digest, Drc. 115-116. DOI: 10.1109/DRC.2013.6633820  0.427
2013 Rajan S, Jena D. Gallium nitride electronics Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/070301  0.604
2013 Ma N, Jena D. Interband tunneling in two-dimensional crystal semiconductors Applied Physics Letters. 102. DOI: 10.1063/1.4799498  0.408
2013 Yan R, Zhang Q, Kirillov OA, Li W, Basham J, Boosalis A, Liang X, Jena D, Richter CA, Seabaugh AC, Gundlach DJ, Xing HG, Nguyen NV. Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide Applied Physics Letters. 102. DOI: 10.1063/1.4796169  0.543
2013 Hwang WS, Remskar M, Yan R, Kosel T, Kyung Park J, Jin Cho B, Haensch W, Xing H, Seabaugh A, Jena D. Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors Applied Physics Letters. 102. DOI: 10.1063/1.4789975  0.421
2013 Verma J, Kandaswamy PK, Protasenko V, Verma A, Grace Xing H, Jena D. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes Applied Physics Letters. 102. DOI: 10.1063/1.4789512  0.38
2013 Sensale-Rodriguez B, Guo J, Wang R, Verma J, Li G, Fang T, Beam E, Ketterson A, Schuette M, Saunier P, Gao X, Guo S, Snider G, Fay P, Jena D, et al. Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs Solid-State Electronics. 80: 67-71. DOI: 10.1016/J.Sse.2012.10.004  0.528
2013 Sun N, Tahy K, Xing H, Jena D, Arnold G, Ruggiero ST. Electrical noise and transport properties of graphene Journal of Low Temperature Physics. 172: 202-211. DOI: 10.1007/S10909-013-0866-X  0.536
2013 Jana RK, Snider GL, Jena D. On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 1469-1472. DOI: 10.1002/Pssc.201300280  0.375
2013 Tahy K, Xing H, Jena D. Graphene nanoribbon FETs for digital electronics: Experiment and modeling International Journal of Circuit Theory and Applications. 41: 603-607. DOI: 10.1002/Cta.1801  0.609
2013 Yan R, Rafique S, Li W, Liang X, Jena D, Liu L, Sensale-Rodriguez B, Xing HG. Tunable graphene-based metamaterial terahertz modulators Cleo: Science and Innovations, Cleo_si 2013. CM2J.2.  0.446
2012 Yan R, Sensale-Rodriguez B, Liu L, Jena D, Xing HG. A new class of electrically tunable metamaterial terahertz modulators. Optics Express. 20: 28664-71. PMID 23263104 DOI: 10.1364/Oe.20.028664  0.554
2012 Kim S, Konar A, Hwang WS, Lee JH, Lee J, Yang J, Jung C, Kim H, Yoo JB, Choi JY, Jin YW, Lee SY, Jena D, Choi W, Kim K. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Communications. 3: 1011. PMID 22910357 DOI: 10.1038/Ncomms2018  0.448
2012 Choi W, Cho MY, Konar A, Lee JH, Cha GB, Hong SC, Kim S, Kim J, Jena D, Joo J, Kim S. High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared. Advanced Materials (Deerfield Beach, Fla.). 24: 5832-6. PMID 22903762 DOI: 10.1002/Adma.201201909  0.381
2012 Sensale-Rodriguez B, Yan R, Rafique S, Zhu M, Li W, Liang X, Gundlach D, Protasenko V, Kelly MM, Jena D, Liu L, Xing HG. Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators. Nano Letters. 12: 4518-22. PMID 22862777 DOI: 10.1021/Nl3016329  0.542
2012 Sensale-Rodriguez B, Yan R, Kelly MM, Fang T, Tahy K, Hwang WS, Jena D, Liu L, Xing HG. Broadband graphene terahertz modulators enabled by intraband transitions. Nature Communications. 3: 780. PMID 22510685 DOI: 10.1038/Ncomms1787  0.54
2012 Hwang WS, Tahy K, Nyakiti LO, Wheeler VD, Myers-Ward RL, Eddy CR, Gaskill DK, Xing H, Seabaugh A, Jena D. Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3693593  0.405
2012 Yue Y, Hu Z, Guo J, Sensale-Rodriguez B, Li G, Wang R, Faria F, Fang T, Song B, Gao X, Guo S, Kosel T, Snider G, Fay P, Jena D, et al. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and f T of 370 GHz Ieee Electron Device Letters. 33: 988-990. DOI: 10.1109/Led.2012.2196751  0.595
2012 Fang T, Wang R, Xing H, Rajan S, Jena D. Effect of optical phonon scattering on the performance of GaN transistors Ieee Electron Device Letters. 33: 709-711. DOI: 10.1109/Led.2012.2187169  0.659
2012 Li G, Wang R, Guo J, Verma J, Hu Z, Yue Y, Faria F, Cao Y, Kelly M, Kosel T, Xing H, Jena D. Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts Ieee Electron Device Letters. 33: 661-663. DOI: 10.1109/Led.2012.2186628  0.605
2012 Guo J, Li G, Faria F, Cao Y, Wang R, Verma J, Gao X, Guo S, Beam E, Ketterson A, Schuette M, Saunier P, Wistey M, Jena D, Xing H. MBE-regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 Ω̇mm Ieee Electron Device Letters. 33: 525-527. DOI: 10.1109/Led.2012.2186116  0.553
2012 Hwang WS, Remskar M, Yan R, Protasenko V, Tahy K, Chae SD, Xing H, Seabaugh A, Jena D. First demonstration of two-dimensional WS 2 transistors exhibiting 10 5 room temperature modulation and ambipolar behavior Device Research Conference - Conference Digest, Drc. 187-188. DOI: 10.1109/DRC.2012.6257042  0.434
2012 Li G, Wang R, Verma J, Xing H, Jena D. Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic Device Research Conference - Conference Digest, Drc. 153-154. DOI: 10.1109/DRC.2012.6256962  0.579
2012 Verma J, Kumar Kandaswamy P, Protasenko V, Verma A, Xing H, Jena D. Tunnel injection GaN/AlN quantum dot UV LED Device Research Conference - Conference Digest, Drc. 249-250. DOI: 10.1109/DRC.2012.6256947  0.448
2012 Konar A, Verma A, Fang T, Zhao P, Jana R, Jena D. Charge transport in non-polar and semi-polar III-V nitride heterostructures Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/2/024018  0.36
2012 Sensale-Rodriguez B, Yan R, Zhu M, Jena D, Liu L, Grace Xing H. Efficient terahertz electro-absorption modulation employing graphene plasmonic structures Applied Physics Letters. 101. DOI: 10.1063/1.4773374  0.358
2012 Ganguly S, Konar A, Hu Z, Xing H, Jena D. Polarization effects on gate leakage in InAlN/AlN/GaN high-electron- mobility transistors Applied Physics Letters. 101. DOI: 10.1063/1.4773244  0.621
2012 Jena D, Fang T, Zhang Q, Xing H. Response to "comment on 'Zener tunneling semiconducting nanotubes and graphene nanoribbon p-n junctions'" Applied Physics Letters. 101. DOI: 10.1063/1.4766741  0.303
2012 Pietzka C, Li G, Alomari M, Xing H, Jena D, Kohn E. Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements Journal of Applied Physics. 112. DOI: 10.1063/1.4757932  0.577
2012 Afroz Faria F, Guo J, Zhao P, Li G, Kumar Kandaswamy P, Wistey M, Xing H, Jena D. Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy Applied Physics Letters. 101. DOI: 10.1063/1.4738768  0.364
2012 Yan R, Zhang Q, Li W, Calizo I, Shen T, Richter CA, Hight-Walker AR, Liang X, Seabaugh A, Jena D, Grace Xing H, Gundlach DJ, Nguyen NV. Determination of graphene work function and graphene-insulator- semiconductor band alignment by internal photoemission spectroscopy Applied Physics Letters. 101. DOI: 10.1063/1.4734955  0.377
2012 Sik Hwang W, Remskar M, Yan R, Protasenko V, Tahy K, Doo Chae S, Zhao P, Konar A, Xing H, Seabaugh A, Jena D. Transistors with chemically synthesized layered semiconductor WS 2 exhibiting 10 5 room temperature modulation and ambipolar behavior Applied Physics Letters. 101. DOI: 10.1063/1.4732522  0.428
2012 Hwang WS, Tahy K, Li X, Xing H, Seabaugh AC, Sung CY, Jena D. Transport properties of graphene nanoribbon transistors on chemical-vapor-deposition grown wafer-scale graphene Applied Physics Letters. 100. DOI: 10.1063/1.4716983  0.371
2012 Laboutin O, Cao Y, Johnson W, Wang R, Li G, Jena D, Xing H. InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.3697415  0.594
2012 Feenstra RM, Jena D, Gu G. Single-particle tunneling in doped graphene-insulator-graphene junctions Journal of Applied Physics. 111. DOI: 10.1063/1.3686639  0.348
2012 Sivasubramani P, Park TJ, Coss BE, Lucero A, Huang J, Brennan B, Cao Y, Jena D, Xing HG, Wallace RM, Kim J. In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O 3-oxidized GaN substrates Physica Status Solidi - Rapid Research Letters. 6: 22-24. DOI: 10.1002/Pssr.201105417  0.472
2011 Liao AD, Wu JZ, Wang X, Tahy K, Jena D, Dai H, Pop E. Thermally limited current carrying ability of graphene nanoribbons. Physical Review Letters. 106: 256801. PMID 21770659 DOI: 10.1103/Physrevlett.106.256801  0.357
2011 Gao B, Hartland G, Fang T, Kelly M, Jena D, Xing HG, Huang L. Studies of intrinsic hot phonon dynamics in suspended graphene by transient absorption microscopy. Nano Letters. 11: 3184-9. PMID 21696177 DOI: 10.1021/Nl201397A  0.522
2011 Wang R, Li G, Verma J, Zimmermann T, Hu Z, Laboutin O, Cao Y, Johnson W, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Si-containing recessed ohmic contacts and 210GHz quaternary barrier InAlGaN high-electron-mobility transistors Applied Physics Express. 4. DOI: 10.1143/Apex.4.096502  0.431
2011 SENSALE-RODRIGUEZ B, LIU L, WANG R, ZIMMERMANN T, FAY P, JENA D, XING HG. FET THZ DETECTORS OPERATING IN THE QUANTUM CAPACITANCE LIMITED REGION International Journal of High Speed Electronics and Systems. 20: 597-609. DOI: 10.1142/S0129156411006891  0.531
2011 ZHANG Z, CAO Y, KELLY M, JENA D, FAY P, RAJAVEL R, DEELMAN P. A PHYSICS-BASED TUNNELING MODEL FOR SB-HETEROSTRUCTURE BACKWARD TUNNEL DIODE MILLIMETER-WAVE DETECTORS International Journal of High Speed Electronics and Systems. 20: 589-596. DOI: 10.1142/S012915641100688X  0.369
2011 Zhao P, Zhang Q, Jena D, Koswatta SO. Influence of metal-graphene contact on the operation and scalability of graphene field-effect transistors Ieee Transactions On Electron Devices. 58: 3170-3178. DOI: 10.1109/Ted.2011.2159507  0.348
2011 Wang R, Li G, Verma J, Sensale-Rodriguez B, Fang T, Guo J, Hu Z, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing HG. 220-GHz quaternary barrier InAlGaN/AlN/GaN HEMTs Ieee Electron Device Letters. 32: 1215-1217. DOI: 10.1109/Led.2011.2158288  0.621
2011 Wang R, Li G, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. 210-GHz InAlN/GaN HEMTs with dielectric-free passivation Ieee Electron Device Letters. 32: 892-894. DOI: 10.1109/Led.2011.2147753  0.596
2011 Wang R, Saunier P, Tang Y, Fang T, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Enhancement-mode InAlN/AlN/GaN HEMTs with 10-12A/mm leakage current and 10-12 on/off current ratio Ieee Electron Device Letters. 32: 309-311. DOI: 10.1109/Led.2010.2095494  0.602
2011 Sensale-Rodriguez B, Guo J, Wang R, Li G, Fang T, Saunier P, Ketterson A, Schuette M, Gao X, Guo S, Cao Y, Laboutin O, Johnson W, Snider G, Fay P, ... Jena D, et al. Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135164  0.432
2011 Fang T, Wang R, Li G, Xing H, Rajan S, Jena D. Effect of optical phonon scattering on the performance limits of ultrafast GaN transistors Device Research Conference - Conference Digest, Drc. 273-274. DOI: 10.1109/DRC.2011.5994529  0.558
2011 Wang R, Li G, Fang T, Laboutin O, Cao Y, Johnson W, Snider G, Fay P, Jena D, Xing H. Improvement of fT in InAl(Ga)N barrier HEMTs by plasma treatments Device Research Conference - Conference Digest, Drc. 139-140. DOI: 10.1109/DRC.2011.5994455  0.397
2011 Ganguly S, Verma J, Li G, Zimmermann T, Xing H, Jena D. Barrier height, interface charge & tunneling effective mass in ALD Al2O3/AlN/GaN HEMTs Device Research Conference - Conference Digest, Drc. 121-122. DOI: 10.1109/DRC.2011.5994445  0.55
2011 Tahy K, Hwang WS, Tedesco JL, Myers-Ward RL, Campbell PM, Eddy CR, Gaskill DK, Xing H, Seabaugh A, Jena D. Sub-10 nm epitaxial graphene nanoribbon FETs Device Research Conference - Conference Digest, Drc. 39-40. DOI: 10.1109/DRC.2011.5994411  0.448
2011 Fang T, Konar A, Xing H, Jena D. High-field transport in two-dimensional graphene Physical Review B. 84. DOI: 10.1103/Physrevb.84.125450  0.574
2011 Konar A, Fang T, Jena D. Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas Physical Review B. 84. DOI: 10.1103/Physrevb.84.085422  0.341
2011 Ganguly S, Verma J, Li G, Zimmermann T, Xing H, Jena D. Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions Applied Physics Letters. 99: 193504. DOI: 10.1063/1.3658450  0.37
2011 Verma J, Simon J, Protasenko V, Kosel T, Grace Xing H, Jena D. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping Applied Physics Letters. 99. DOI: 10.1063/1.3656707  0.422
2011 Sensale-Rodriguez B, Fang T, Yan R, Kelly MM, Jena D, Liu L, Xing H. Unique prospects for graphene-based terahertz modulators Applied Physics Letters. 99. DOI: 10.1063/1.3636435  0.359
2011 Jana RK, Jena D. Stark-effect scattering in rough quantum wells Applied Physics Letters. 99: 12104. DOI: 10.1063/1.3607485  0.315
2011 Goodman KD, Protasenko VV, Verma J, Kosel TH, Xing HG, Jena D. Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3575323  0.566
2011 Goodman K, Protasenko V, Verma J, Kosel T, Xing G, Jena D. Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide Journal of Crystal Growth. 334: 113-117. DOI: 10.1016/J.Jcrysgro.2011.08.032  0.379
2011 Cao Y, Wang K, Li G, Kosel T, Xing H, Jena D. MBE growth of high conductivity single and multiple AlN/GaN heterojunctions Journal of Crystal Growth. 323: 529-533. DOI: 10.1016/J.Jcrysgro.2010.12.047  0.45
2011 Jena D, Simon J, Wang A, Cao Y, Goodman K, Verma J, Ganguly S, Li G, Karda K, Protasenko V, Lian C, Kosel T, Fay P, Xing H. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design Physica Status Solidi (a) Applications and Materials Science. 208: 1511-1516. DOI: 10.1002/Pssa.201001189  0.539
2011 Zimmermann T, Cao Y, Li G, Snider G, Jena D, Xing H. Subcritical barrier AlN/GaN E/D-mode HFETs and inverters Physica Status Solidi (a) Applications and Materials Science. 208: 1620-1622. DOI: 10.1002/Pssa.201001178  0.584
2011 Guo J, Cao Y, Lian C, Zimmermann T, Li G, Verma J, Gao X, Guo S, Saunier P, Wistey M, Jena D, Xing HG. Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy Physica Status Solidi (a). 208: 1617-1619. DOI: 10.1002/Pssa.201001177  0.417
2010 Simon J, Protasenko V, Lian C, Xing H, Jena D. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science (New York, N.Y.). 327: 60-4. PMID 20044569 DOI: 10.1126/Science.1183226  0.602
2010 Wang R, Saunier P, Xing X, Lian C, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-ms/mm transconductance Ieee Electron Device Letters. 31: 1383-1385. DOI: 10.1109/Led.2010.2072771  0.579
2010 Li G, Zimmermann T, Cao Y, Lian C, Xing X, Wang R, Fay P, Xing HG, Jena D. Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering Ieee Electron Device Letters. 31: 954-956. DOI: 10.1109/Led.2010.2052912  0.388
2010 Tang Y, Saunier P, Wang R, Ketterson A, Gao X, Guo S, Snider G, Jena D, Xing H, Fay P. High-performance monolithically-integrated E/D mode InAlN/AlN/GaN HEMTs for mixed-signal applications Technical Digest - International Electron Devices Meeting, Iedm. 30.4.1-30.4.4. DOI: 10.1109/IEDM.2010.5703451  0.429
2010 Tahy K, Fleming MJ, Raynal B, Protasenko V, Koswatta S, Jena D, Xing H, Kelly M. Device characteristics of single-layer graphene FETs grown on copper Device Research Conference - Conference Digest, Drc. 77-78. DOI: 10.1109/DRC.2010.5551930  0.486
2010 Wang R, Xing X, Fang T, Zimmermann T, Lian C, Li G, Saunier P, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. High performance E-mode InAIN/GaN HEMTs: Interface states from subthreshold slopes Device Research Conference - Conference Digest, Drc. 129-130. DOI: 10.1109/DRC.2010.5551875  0.43
2010 Konar A, Fang T, Sun N, Jena D. Anisotropic charge transport in nonpolar GaN quantum wells: Polarization induced line charge and interface roughness scattering Physical Review B. 82. DOI: 10.1103/Physrevb.82.193301  0.371
2010 Konar A, Fang T, Jena D. Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors Physical Review B. 82. DOI: 10.1103/Physrevb.82.115452  0.378
2010 Li G, Cao Y, Xing HG, Jena D. High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers Applied Physics Letters. 97: 222110. DOI: 10.1063/1.3523358  0.606
2010 Cao Y, Xing H, Jena D. Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors Applied Physics Letters. 97: 222116. DOI: 10.1063/1.3521258  0.568
2010 Lian C, Tahy K, Fang T, Li G, Xing HG, Jena D. Quantum transport in graphene nanoribbons patterned by metal masks Applied Physics Letters. 96: 103109. DOI: 10.1063/1.3352559  0.395
2010 Calderón-Muñoz WR, Jena D, Sen M. Temperature influence on hydrodynamic instabilities in a one-dimensional electron flow in semiconductors Journal of Applied Physics. 107: 074504. DOI: 10.1063/1.3326946  0.333
2010 Cao Y, Zimmermann T, Xing H, Jena D. Polarization-engineered removal of buffer leakage for GaN transistors Applied Physics Letters. 96: 042102. DOI: 10.1063/1.3293454  0.62
2010 Simon J, Cao Y, Jena D. Short-period AlN/GaN p-type superlattices: Hole transport use in p-n junctions Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2386-2389. DOI: 10.1002/Pssc.200983868  0.384
2009 Simon J, Zhang Z, Goodman K, Xing H, Kosel T, Fay P, Jena D. Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. Physical Review Letters. 103: 026801. PMID 19659229 DOI: 10.1103/Physrevlett.103.026801  0.589
2009 Sensale-Rodríguez B, Fay P, Liu L, Jena D, Xing HG. Enhanced terahertz detection in resonant tunnel diode-gated HEMTs Ecs Transactions. 49: 93-102. DOI: 10.1149/04901.0093ecst  0.519
2009 ZIMMERMANN T, CAO Y, JENA D, XING HG, SAUNIER P. 4-NM AlN BARRIER ALL BINARY HFET WITH SiNx GATE DIELECTRIC International Journal of High Speed Electronics and Systems. 19: 153-159. DOI: 10.1142/S0129156409006205  0.624
2009 Xu G, Tripathy SK, Mu X, Ding YJ, Wang K, Cao Y, Jena D, Khurgin JB. Investigation of hot electrons and hot phonons generated within an AlN/GaN high electron mobility transistor Laser Physics. 19: 745-751. DOI: 10.1134/S1054660X09040306  0.39
2009 Calderón-Muñoz WR, Jena D, Sen M. Hydrodynamic instability of confined two-dimensional electron flow in semiconductors Journal of Applied Physics. 106: 014506. DOI: 10.1063/1.3158551  0.329
2009 Jena D. A theory for the high-field current-carrying capacity of one-dimensional semiconductors Journal of Applied Physics. 105: 123701. DOI: 10.1063/1.3147877  0.396
2009 Koh YK, Cao Y, Cahill DG, Jena D. Heat-transport mechanisms in superlattices Advanced Functional Materials. 19: 610-615. DOI: 10.1002/Adfm.200800984  0.306
2008 Yu Y, Protasenko V, Jena D, Xing HG, Kuno M. Photocurrent polarization anisotropy of randomly oriented nanowire networks. Nano Letters. 8: 1352-7. PMID 18393472 DOI: 10.1021/Nl080028P  0.534
2008 Goodman K, Wang K, Luo X, Simon J, Kosel T, Jena D. GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy Mrs Proceedings. 1080. DOI: 10.1557/Proc-1080-O08-04  0.396
2008 Zimmermann T, Deen D, Cao Y, Simon J, Fay P, Jena D, Xing HG. AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance Ieee Electron Device Letters. 29: 661-664. DOI: 10.1109/Led.2008.923318  0.441
2008 Zhang Q, Fang T, Xing H, Seabaugh A, Jena D. Graphene nanoribbon tunnel transistors Ieee Electron Device Letters. 29: 1344-1346. DOI: 10.1109/Led.2008.2005650  0.386
2008 Fang T, Konar A, Xing H, Jena D. Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering Physical Review B. 78. DOI: 10.1103/Physrevb.78.205403  0.515
2008 Jena D, Fang T, Zhang Q, Xing H. Zener tunneling in semiconducting nanotube and graphene nanoribbon p−n junctions Applied Physics Letters. 93: 112106. DOI: 10.1063/1.2983744  0.345
2008 Xu G, Tripathy SK, Mu X, Ding YJ, Wang K, Cao Y, Jena D, Khurgin JB. Stokes and anti-Stokes resonant Raman scatterings from biased GaN/AlN heterostructure Applied Physics Letters. 93: 051912. DOI: 10.1063/1.2967337  0.302
2008 Khurgin JB, Jena D, Ding YJ. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Applied Physics Letters. 93: 032110. DOI: 10.1063/1.2961120  0.366
2008 Cao Y, Wang K, Orlov A, Xing H, Jena D. Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions Applied Physics Letters. 92: 152112. DOI: 10.1063/1.2911748  0.441
2008 Tripathy SK, Xu G, Mu X, Ding YJ, Wang K, Cao Y, Jena D, Khurgin JB. Evidence of hot electrons generated from an AlN∕GaN high electron mobility transistor Applied Physics Letters. 92: 013513. DOI: 10.1063/1.2830834  0.38
2008 Deen D, Zimmermann T, Cao Y, Jena D, Xing HG. 2.3 nm barrier AlN/GaN HEMTs with insulated gates Physica Status Solidi (C). 5: 2047-2049. DOI: 10.1002/Pssc.200878749  0.482
2008 Nakamura S, Mishra U, DenBaars S, Speck JS, Wraback M, Arakawa Y, Allerman A, Grandjean N, Shealy J, Krames M, Palacios T, Jena D. Preface: phys. stat. sol. (c) 5/6 Physica Status Solidi (C). 5: 1472-1474. DOI: 10.1002/Pssc.200860019  0.526
2008 Zimmermann T, Deen D, Cao Y, Jena D, Xing HG. Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs Physica Status Solidi (C). 5: 2030-2032. DOI: 10.1002/Pssc.200778724  0.597
2008 Cao Y, Wang K, Jena D. Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE Physica Status Solidi (C). 5: 1873-1875. DOI: 10.1002/Pssc.200778723  0.427
2008 Wang K, Kosel T, Jena D. Structural and transport properties of InN grown on GaN by MBE Physica Status Solidi (C). 5: 1811-1814. DOI: 10.1002/Pssc.200778664  0.405
2008 Simon J, Jena D. Effect of growth conditions on the conductivity of Mg doped p-type GaN by molecular beam epitaxy Physica Status Solidi (a) Applications and Materials Science. 205: 1074-1077. DOI: 10.1002/Pssa.200778745  0.388
2007 Singh A, Li X, Protasenko V, Galantai G, Kuno M, Xing HG, Jena D. Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids. Nano Letters. 7: 2999-3006. PMID 17760476 DOI: 10.1021/Nl0713023  0.559
2007 Jena D, Konar A. Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering. Physical Review Letters. 98: 136805. PMID 17501230 DOI: 10.1103/Physrevlett.98.136805  0.368
2007 Konar A, Jena D. Tailoring the carrier mobility of semiconductor nanowires by remote dielectrics Journal of Applied Physics. 102: 123705. DOI: 10.1063/1.2825615  0.373
2007 Khurgin J, Ding YJ, Jena D. Hot phonon effect on electron velocity saturation in GaN: A second look Applied Physics Letters. 91: 252104. DOI: 10.1063/1.2824872  0.361
2007 Wang K(, Lian C, Su N, Jena D, Timler J. Conduction band offset at the InN∕GaN heterojunction Applied Physics Letters. 91: 232117. DOI: 10.1063/1.2821378  0.39
2007 Fang T, Konar A, Xing H, Jena D. Carrier statistics and quantum capacitance of graphene sheets and ribbons Applied Physics Letters. 91: 092109. DOI: 10.1063/1.2776887  0.357
2007 Calderón-Muñoz WR, Sen M, Jena D. Hydrodynamic instability of one-dimensional electron flow in semiconductors Journal of Applied Physics. 102: 023703. DOI: 10.1063/1.2753692  0.308
2007 Cao Y, Jena D. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions Applied Physics Letters. 90: 182112. DOI: 10.1063/1.2736207  0.387
2007 Zhou R, Chang HC, Protasenko V, Kuno M, Singh AK, Jena D, Xing H. CdSe nanowires with illumination-enhanced conductivity: Induced dipoles, dielectrophoretic assembly, and field-sensitive emission Journal of Applied Physics. 101. DOI: 10.1063/1.2714670  0.372
2006 Cao Y, Jena D. Ultrathin AlN/GaN Heterojunctions by MBE for THz Applications Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I13-05  0.463
2006 Liberis J, Ramonas M, Kiprijanovic O, Matulionis A, Goel N, Simon J, Wang K, Xing H, Jena D. Hot phonons in Si-doped GaN Applied Physics Letters. 89. DOI: 10.1063/1.2388866  0.57
2006 Gao M, Bradley ST, Cao Y, Jena D, Lin Y, Ringel SA, Hwang J, Schaff WJ, Brillson LJ. Compositional modulation and optical emission in AlGaN epitaxial films Journal of Applied Physics. 100. DOI: 10.1063/1.2382622  0.339
2006 Wang K, Cao Y, Simon J, Zhang J, Mintairov A, Merz J, Hall D, Kosel T, Jena D. Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy Applied Physics Letters. 89. DOI: 10.1063/1.2364456  0.409
2006 Simon J, Wang A, Xing H, Rajan S, Jena D. Carrier transport and confinement in polarization-induced three-dimensional electron slabs: Importance of alloy scattering in AlGaN Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2168253  0.613
2006 Rajan S, DenBaars SP, Mishra UK, Xing H(, Jena D. Electron mobility in graded AlGaN alloys Applied Physics Letters. 88: 42103. DOI: 10.1063/1.2165190  0.581
2006 Wang K, Simon J, Goel N, Jena D. Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2163709  0.427
2006 Khandelwal A, Jena D, Grebinski JW, Hull KL, Kuno MK. Ultrathin CdSe nanowire field-effect transistors Journal of Electronic Materials. 35: 170-172. DOI: 10.1007/S11664-006-0200-3  0.419
2005 Simon J, Wang K, Xing H, Jena D, Rajan S. Polarization-Induced 3-Dimensional Electron Slabs in Graded AlGaN Layers Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff17-04  0.64
2004 Zhao W, Jena D. Dipole scattering in highly polar semiconductor alloys Journal of Applied Physics. 96: 2095-2101. DOI: 10.1063/1.1767615  0.33
2004 Rajan S, Xing H, DenBaars S, Mishra UK, Jena D. AlGaN/GaN polarization-doped field-effect transistor for microwave power applications Applied Physics Letters. 84: 1591-1593. DOI: 10.1063/1.1652254  0.642
2003 Xing H, Jena D, Rodwell M, Mishra U. Explanation of anomalously high current gain observed in GaN based bipolar transistors Ieee Electron Device Letters. 24: 4-6. DOI: 10.1109/Led.2002.807023  0.503
2003 Jena D, Heikman S, Speck JS, Gossard A, Mishra UK, Link A, Ambacher O. Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN Physical Review B - Condensed Matter and Materials Physics. 67: 1533061-1533064. DOI: 10.1103/Physrevb.67.153306  0.405
2003 Jena D, Heikman S, Speck JS, Mishra UK, Link A, Ambacher O. Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN Physica Status Solidi C: Conferences. 2339-2342. DOI: 10.1002/Pssc.200303545  0.366
2002 Jiménez A, Buttari D, Jena D, Coffíe R, Heikman S, Zhang NQ, Shen L, Calleja E, Muñoz E, Speck J, Mishra UK. Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs Ieee Electron Device Letters. 23: 306-308. DOI: 10.1109/Led.2002.1004217  0.787
2002 Coffie R, Heikman S, Buttari D, Keller S, Chini A, Shen L, Zhang N, Jimenez A, Jena D, Mishra UK. P-GaN/AlGaN/GaN high electron mobility transistors Device Research Conference - Conference Digest, Drc. 2002: 25-26. DOI: 10.1109/DRC.2002.1029489  0.352
2002 Jena D, Mishra UK. Quantum and classical scattering times due to charged dislocations in an impure electron gas Physical Review B. 66: 241307. DOI: 10.1103/Physrevb.66.241307  0.346
2002 Jena D, Heikman S, Green D, Buttari D, Coffie R, Xing H, Keller S, DenBaars S, Speck JS, Mishra UK, Smorchkova I. Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys Applied Physics Letters. 81: 4395-4397. DOI: 10.1063/1.1526161  0.808
2002 Jena D, Mishra UK. Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases Applied Physics Letters. 80: 64-66. DOI: 10.1063/1.1429758  0.339
2001 Jena D, Smorchkova I, Gossard A, Mishra U. Electron Transport in III-V Nitride Two-Dimensional Electron Gases Physica Status Solidi (B). 228: 617-619. DOI: 10.1002/1521-3951(200111)228:2<617::Aid-Pssb617>3.0.Co;2-E  0.364
2000 Jena D, Gossard AC, Mishra UK. Dipole scattering in polarization induced III–V nitride two-dimensional electron gases Journal of Applied Physics. 88: 4734. DOI: 10.1063/1.1311832  0.388
2000 Jena D, Gossard AC, Mishra UK. Dislocation scattering in a two-dimensional electron gas Applied Physics Letters. 76: 1707-1709. DOI: 10.1063/1.126143  0.325
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