Year |
Citation |
Score |
2021 |
Bansal A, Hilse M, Huet B, Wang K, Kozhakhmetov A, Kim JH, Bachu S, Alem N, Collazo R, Robinson JA, Engel-Herbert R, Redwing JM. Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. Acs Applied Materials & Interfaces. PMID 34748305 DOI: 10.1021/acsami.1c14591 |
0.326 |
|
2020 |
Guo Q, Kirste R, Reddy P, Mecouch W, Guan Y, Mita S, Washiyama S, Tweedie J, Sitar Z, Collazo R. Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding Japanese Journal of Applied Physics. 59: 91001. DOI: 10.35848/1347-4065/Abab44 |
0.603 |
|
2020 |
Reddy P, Khachariya D, Szymanski D, Breckenridge MH, Sarkar B, Pavlidis S, Collazo R, Sitar Z, Kohn E. Role of polarity in SiN on Al/GaN and the pathway to stable contacts Semiconductor Science and Technology. 35: 55007. DOI: 10.1088/1361-6641/Ab7775 |
0.531 |
|
2020 |
Amano H, Collazo R, Santi Cd, Einfeldt S, Funato M, Glaab J, Hagedorn S, Hirano A, Hirayama H, Ishii R, Kashima Y, Kawakami Y, Kirste R, Kneissl M, Martin RW, et al. The 2020 UV Emitter Roadmap Journal of Physics D. DOI: 10.1088/1361-6463/Aba64C |
0.465 |
|
2020 |
Bagheri P, Reddy P, Kim JH, Rounds R, Sochacki T, Kirste R, Bockowski M, Collazo R, Sitar Z. Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN Applied Physics Letters. 117: 82101. DOI: 10.1063/5.0018824 |
0.528 |
|
2020 |
Khachariya D, Szymanski D, Sengupta R, Reddy P, Kohn E, Sitar Z, Collazo R, Pavlidis S. Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN Journal of Applied Physics. 128: 64501. DOI: 10.1063/5.0015140 |
0.596 |
|
2020 |
Baker JN, Bowes PC, Harris JS, Collazo R, Sitar Z, Irving DL. Complexes and compensation in degenerately donor doped GaN Applied Physics Letters. 117: 102109. DOI: 10.1063/5.0013988 |
0.551 |
|
2020 |
Vetter E, Biliroglu M, Seyitliyev D, Reddy P, Kirste R, Sitar Z, Collazo R, Gundogdu K, Sun D. Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures Applied Physics Letters. 117: 93502. DOI: 10.1063/5.0011009 |
0.548 |
|
2020 |
Bagheri P, Kirste R, Reddy P, Washiyama S, Mita S, Sarkar B, Collazo R, Sitar Z. The nature of the DX state in Ge-doped AlGaN Applied Physics Letters. 116: 222102. DOI: 10.1063/5.0008362 |
0.65 |
|
2020 |
Washiyama S, Guan Y, Mita S, Collazo R, Sitar Z. Recovery kinetics in high temperature annealed AlN heteroepitaxial films Journal of Applied Physics. 127: 115301. DOI: 10.1063/5.0002891 |
0.655 |
|
2020 |
Hayden Breckenridge M, Guo Q, Klump A, Sarkar B, Guan Y, Tweedie J, Kirste R, Mita S, Reddy P, Collazo R, Sitar Z. Shallow Si donor in ion-implanted homoepitaxial AlN Applied Physics Letters. 116: 172103. DOI: 10.1063/1.5144080 |
0.641 |
|
2020 |
Reddy P, Bryan Z, Bryan I, Kim JH, Washiyama S, Kirste R, Mita S, Tweedie J, Irving DL, Sitar Z, Collazo R. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys Applied Physics Letters. 116: 032102. DOI: 10.1063/1.5140995 |
0.636 |
|
2020 |
Reddy P, Hayden Breckenridge M, Guo Q, Klump A, Khachariya D, Pavlidis S, Mecouch W, Mita S, Moody B, Tweedie J, Kirste R, Kohn E, Collazo R, Sitar Z. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates Applied Physics Letters. 116: 081101. DOI: 10.1063/1.5138127 |
0.658 |
|
2020 |
Washiyama S, Reddy P, Sarkar B, Breckenridge MH, Guo Q, Bagheri P, Klump A, Kirste R, Tweedie J, Mita S, Sitar Z, Collazo R. The role of chemical potential in compensation control in Si:AlGaN Journal of Applied Physics. 127: 105702. DOI: 10.1063/1.5132953 |
0.676 |
|
2020 |
Klump A, Hoffmann MP, Kaess F, Tweedie J, Reddy P, Kirste R, Sitar Z, Collazo R. Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control Journal of Applied Physics. 127: 045702. DOI: 10.1063/1.5126004 |
0.555 |
|
2020 |
Yamamoto R, Takekawa N, Goto K, Nagashima T, Dalmau R, Schlesser R, Murakami H, Collazo R, Monemar B, Sitar Z, Kumagai Y. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas Journal of Crystal Growth. 545: 125730. DOI: 10.1016/J.Jcrysgro.2020.125730 |
0.753 |
|
2020 |
Wang Y, Huynh K, Liao ME, Yu H, Bai T, Tweedie J, Breckenridge MH, Collazo R, Sitar Z, Bockowski M, Liu Y, Goorsky MS. Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates Physica Status Solidi (B). 257: 1900705. DOI: 10.1002/Pssb.201900705 |
0.54 |
|
2019 |
Guo Q, Kirste R, Mita S, Tweedie J, Reddy P, Washiyama S, Breckenridge MH, Collazo R, Sitar Z. The polarization field in Al-rich AlGaN multiple quantum wells Japanese Journal of Applied Physics. 58: SCCC10. DOI: 10.7567/1347-4065/Ab07A9 |
0.643 |
|
2019 |
Harris JS, Gaddy BE, Collazo R, Sitar Z, Irving DL. Oxygen and silicon point defects in
Al0.65Ga0.35N Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.054604 |
0.527 |
|
2019 |
Guo Q, Kirste R, Mita S, Tweedie J, Reddy P, Moody B, Guan Y, Washiyama S, Klump A, Sitar Z, Collazo R. Design of AlGaN-based quantum structures for low threshold UVC lasers Journal of Applied Physics. 126: 223101. DOI: 10.1063/1.5125256 |
0.662 |
|
2019 |
Chichibu SF, Kojima K, Hazu K, Ishikawa Y, Furusawa K, Mita S, Collazo R, Sitar Z, Uedono A. In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film Applied Physics Letters. 115: 151903. DOI: 10.1063/1.5116900 |
0.688 |
|
2019 |
Alden D, Troha T, Kirste R, Mita S, Guo Q, Hoffmann A, Zgonik M, Collazo R, Sitar Z. Quasi-phase-matched second harmonic generation of UV light using AlN waveguides Applied Physics Letters. 114: 103504. DOI: 10.1063/1.5087058 |
0.642 |
|
2019 |
Houston Dycus J, Washiyama S, Eldred TB, Guan Y, Kirste R, Mita S, Sitar Z, Collazo R, LeBeau JM. The role of transient surface morphology on composition control in AlGaN layers and wells Applied Physics Letters. 114: 031602. DOI: 10.1063/1.5063933 |
0.688 |
|
2019 |
Bobea Graziano M, Bryan I, Bryan Z, Kirste R, Tweedie J, Collazo R, Sitar Z. Structural characteristics of m-plane AlN substrates and homoepitaxial films Journal of Crystal Growth. 507: 389-394. DOI: 10.1016/J.Jcrysgro.2018.07.012 |
0.604 |
|
2018 |
Gulyuk A, LaJeunesse DR, Collazo R, Ivanisevic A. Characterization of Pseudomonas Aeruginosa Films on Different Inorganic Surfaces Before and After UV Light Exposure. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 30122052 DOI: 10.1021/Acs.Langmuir.8B02079 |
0.339 |
|
2018 |
Snyder PJ, LaJeunesse DR, Reddy P, Kirste R, Collazo R, Ivanisevic A. Bioelectronics communication: encoding yeast regulatory responses using nanostructured gallium nitride thin films. Nanoscale. PMID 29888776 DOI: 10.1039/C8Nr03684E |
0.387 |
|
2018 |
Dycus JH, Mirrielees KJ, Grimley ED, Kirste R, Mita S, Sitar Z, Collazo R, Irving D, LeBeau JM. Structure of Ultra-thin Native Oxides on III-Nitride Surfaces. Acs Applied Materials & Interfaces. PMID 29558103 DOI: 10.1021/Acsami.8B00845 |
0.651 |
|
2018 |
Kirste R, Guo Q, Dycus JH, Franke A, Mita S, Sarkar B, Reddy P, LeBeau JM, Collazo R, Sitar Z. 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation Applied Physics Express. 11: 082101. DOI: 10.7567/Apex.11.082101 |
0.649 |
|
2018 |
Rounds R, Sarkar B, Klump A, Hartmann C, Nagashima T, Kirste R, Franke A, Bickermann M, Kumagai Y, Sitar Z, Collazo R. Thermal conductivity of single-crystalline AlN Applied Physics Express. 11: 071001. DOI: 10.7567/Apex.11.071001 |
0.521 |
|
2018 |
Rigler M, Troha T, Guo W, Kirste R, Bryan I, Collazo R, Sitar Z, Zgonik M. Second-Harmonic Generation of Blue Light in GaN Waveguides Applied Sciences. 8: 1218. DOI: 10.3390/App8081218 |
0.564 |
|
2018 |
Reddy P, Washiyama S, Mecouch W, Hernandez-Balderrama LH, Kaess F, Hayden Breckenridge M, Sarkar B, Haidet BB, Franke A, Kohn E, Collazo R, Sitar Z. Plasma enhanced chemical vapor deposition of SiO2and SiNxon AlGaN: Band offsets and interface studies as a function of Al composition Journal of Vacuum Science & Technology A. 36: 061101. DOI: 10.1116/1.5050501 |
0.556 |
|
2018 |
Klump A, Zhou C, Stevie FA, Collazo R, Sitar Z. Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 03F102. DOI: 10.1116/1.5013001 |
0.478 |
|
2018 |
Alden D, Harris J, Bryan Z, Baker J, Reddy P, Mita S, Callsen G, Hoffmann A, Irving D, Collazo R, Sitar Z. Point-Defect Nature of the Ultraviolet Absorption Band in AlN Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.054036 |
0.627 |
|
2018 |
Rounds R, Sarkar B, Sochacki T, Bockowski M, Imanishi M, Mori Y, Kirste R, Collazo R, Sitar Z. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes Journal of Applied Physics. 124: 105106. DOI: 10.1063/1.5047531 |
0.527 |
|
2018 |
Washiyama S, Reddy P, Kaess F, Kirste R, Mita S, Collazo R, Sitar Z. A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition Journal of Applied Physics. 124: 115304. DOI: 10.1063/1.5045058 |
0.66 |
|
2018 |
Rounds R, Sarkar B, Alden D, Guo Q, Klump A, Hartmann C, Nagashima T, Kirste R, Franke A, Bickermann M, Kumagai Y, Sitar Z, Collazo R. The influence of point defects on the thermal conductivity of AlN crystals Journal of Applied Physics. 123: 185107. DOI: 10.1063/1.5028141 |
0.522 |
|
2018 |
Harris JS, Baker JN, Gaddy BE, Bryan I, Bryan Z, Mirrielees KJ, Reddy P, Collazo R, Sitar Z, Irving DL. On compensation in Si-doped AlN Applied Physics Letters. 112: 152101. DOI: 10.1063/1.5022794 |
0.571 |
|
2018 |
Dhall R, Vigil-Fowler D, Houston Dycus J, Kirste R, Mita S, Sitar Z, Collazo R, LeBeau JM. Probing collective oscillation ofd-orbital electrons at the nanoscale Applied Physics Letters. 112: 061102. DOI: 10.1063/1.5012742 |
0.631 |
|
2018 |
Bryan I, Bryan Z, Washiyama S, Reddy P, Gaddy B, Sarkar B, Breckenridge MH, Guo Q, Bobea M, Tweedie J, Mita S, Irving D, Collazo R, Sitar Z. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD Applied Physics Letters. 112: 062102. DOI: 10.1063/1.5011984 |
0.687 |
|
2018 |
Snyder PJ, Reddy P, Kirste R, LaJeunesse DR, Collazo R, Ivanisevic A. Variably doped nanostructured gallium nitride surfaces can serve as biointerfaces for neurotypic PC12 cells and alter their behavior Rsc Advances. 8: 36722-36730. DOI: 10.1039/C8Ra06836D |
0.302 |
|
2017 |
Snyder PJ, Kirste R, Collazo R, Ivanisevic A. Persistent Photoconductivity, Nanoscale Topography, and Chemical Functionalization Can Collectively Influence the Behavior of PC12 Cells on Wide Bandgap Semiconductor Surfaces. Small (Weinheim An Der Bergstrasse, Germany). PMID 28464526 DOI: 10.1002/Smll.201700481 |
0.335 |
|
2017 |
Haidet BB, Sarkar B, Reddy P, Bryan I, Bryan Z, Kirste R, Collazo R, Sitar Z. Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN Japanese Journal of Applied Physics. 56: 100302. DOI: 10.7567/Jjap.56.100302 |
0.529 |
|
2017 |
Sarkar B, Haidet BB, Reddy P, Kirste R, Collazo R, Sitar Z. Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment Applied Physics Express. 10: 071001. DOI: 10.7567/Apex.10.071001 |
0.564 |
|
2017 |
Reddy P, Washiyama S, Kaess F, Kirste R, Mita S, Collazo R, Sitar Z. Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN Journal of Applied Physics. 122: 245702. DOI: 10.1063/1.5002682 |
0.679 |
|
2017 |
Reddy P, Kaess F, Tweedie J, Kirste R, Mita S, Collazo R, Sitar Z. Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers Applied Physics Letters. 111: 152101. DOI: 10.1063/1.5000720 |
0.655 |
|
2017 |
Sarkar B, Mita S, Reddy P, Klump A, Kaess F, Tweedie J, Bryan I, Bryan Z, Kirste R, Kohn E, Collazo R, Sitar Z. High free carrier concentration in p-GaN grown on AlN substrates Applied Physics Letters. 111: 032109. DOI: 10.1063/1.4995239 |
0.684 |
|
2017 |
Shelton CT, Bryan I, Paisley EA, Sachet E, Ihlefeld JF, Lavrik N, Collazo R, Sitar Z, Maria J. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy Apl Materials. 5: 096109. DOI: 10.1063/1.4993840 |
0.587 |
|
2017 |
Reddy P, Sarkar B, Kaess F, Gerhold M, Kohn E, Collazo R, Sitar Z. Defect-free Ni/GaN Schottky barrier behavior with high temperature stability Applied Physics Letters. 110: 011603. DOI: 10.1063/1.4973762 |
0.543 |
|
2017 |
Dycus JH, Mirrielees KJ, Grimley ED, Dhall R, Kirste R, Mita S, Sitar Z, Collazo R, Irving DL, LeBeau JM. Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS Microscopy and Microanalysis. 23: 1444-1445. DOI: 10.1017/S1431927617007887 |
0.609 |
|
2017 |
Sarkar B, Reddy P, Klump A, Kaess F, Rounds R, Kirste R, Mita S, Kohn E, Collazo R, Sitar Z. On Ni/Au Alloyed Contacts to Mg-Doped GaN Journal of Electronic Materials. 47: 305-311. DOI: 10.1007/S11664-017-5775-3 |
0.64 |
|
2017 |
Majkić A, Franke A, Kirste R, Schlesser R, Collazo R, Sitar Z, Zgonik M. Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals Physica Status Solidi (B). 254: 1700077. DOI: 10.1002/Pssb.201700077 |
0.481 |
|
2017 |
Lamprecht M, Jmerik VN, Collazo R, Sitar Z, Ivanov SV, Thonke K. Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN Physica Status Solidi (B). 254: 1600714. DOI: 10.1002/Pssb.201600714 |
0.539 |
|
2017 |
Thonke K, Lamprecht M, Collazo R, Sitar Z. Optical signatures of silicon and oxygen related DX centers in AlN Physica Status Solidi (a). 214: 1600749. DOI: 10.1002/Pssa.201600749 |
0.559 |
|
2017 |
Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, et al. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Advanced Electronic Materials. 4: 1600501. DOI: 10.1002/Aelm.201600501 |
0.449 |
|
2016 |
Abate Y, Seidlitz D, Fali A, Gamage S, Babicheva VE, Yakovlev VS, Stockman MI, Collazo R, Alden DE, Dietz N. Nanoscopy of Phase Separation in InxGa1-xN Alloys. Acs Applied Materials & Interfaces. PMID 27533107 DOI: 10.1021/Acsami.6B06766 |
0.305 |
|
2016 |
Huang L, Li G, Gurarslan A, Yu Y, Kirste R, Guo W, Zhao J, Collazo R, Sitar Z, Parsons GN, Kudenov M, Cao L. Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers. Acs Nano. PMID 27483193 DOI: 10.1021/Acsnano.6B02195 |
0.507 |
|
2016 |
Bain LE, Kirste R, Johnson CA, Ghashghaei HT, Collazo R, Ivanisevic A. Neurotypic cell attachment and growth on III-nitride lateral polarity structures. Materials Science & Engineering. C, Materials For Biological Applications. 58: 1194-8. PMID 26478421 DOI: 10.1016/J.Msec.2015.09.084 |
0.376 |
|
2016 |
Troha T, Rigler M, Alden D, Bryan I, Guo W, Kirste R, Mita S, Gerhold MD, Collazo R, Sitar Z, Zgonik M. UV second harmonic generation in AlN waveguides with modal phase matching Optical Materials Express. 6: 2014. DOI: 10.1364/Ome.6.002014 |
0.652 |
|
2016 |
Seidlitz D, Fali A, Kankanamge ISM, Alden D, Collazo R, Hoffmann A, Dietz N, Abate Y. Infrared nanoscopy of In-rich InGaN epilayers(Conference Presentation) Proceedings of Spie. 9954: 995408. DOI: 10.1117/12.2238043 |
0.374 |
|
2016 |
Franke A, Hoffmann MP, Hernandez-Balderrama L, Kaess F, Bryan I, Washiyama S, Bobea M, Tweedie J, Kirste R, Gerhold M, Collazo R, Sitar Z. Strain engineered high reflectivity DBRs in the deep UV Proceedings of Spie. 9748. DOI: 10.1117/12.2211700 |
0.586 |
|
2016 |
Mohn S, Stolyarchuk N, Markurt T, Kirste R, Hoffmann MP, Collazo R, Courville A, Di Felice R, Sitar Z, Vennéguès P, Albrecht M. Polarity Control in Group-III Nitrides beyond Pragmatism Physical Review Applied. 5. DOI: 10.1103/Physrevapplied.5.054004 |
0.5 |
|
2016 |
Kaess F, Reddy P, Alden D, Klump A, Hernandez-Balderrama LH, Franke A, Kirste R, Hoffmann A, Collazo R, Sitar Z. The effect of illumination power density on carbon defect configuration in silicon doped GaN Journal of Applied Physics. 120: 235705. DOI: 10.1063/1.4972468 |
0.537 |
|
2016 |
Reddy P, Hoffmann MP, Kaess F, Bryan Z, Bryan I, Bobea M, Klump A, Tweedie J, Kirste R, Mita S, Gerhold M, Collazo R, Sitar Z. Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control Journal of Applied Physics. 120: 185704. DOI: 10.1063/1.4967397 |
0.639 |
|
2016 |
Franke A, Hoffmann MP, Kirste R, Bobea M, Tweedie J, Kaess F, Gerhold M, Collazo R, Sitar Z. High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers Journal of Applied Physics. 120: 135703. DOI: 10.1063/1.4963831 |
0.574 |
|
2016 |
Kaess F, Mita S, Xie J, Reddy P, Klump A, Hernandez-Balderrama LH, Washiyama S, Franke A, Kirste R, Hoffmann A, Collazo R, Sitar Z. Correlation between mobility collapse and carbon impurities in Si-doped GaN
grown by low pressure metalorganic chemical vapor deposition Journal of Applied Physics. 120: 105701. DOI: 10.1063/1.4962017 |
0.675 |
|
2016 |
Alden D, Guo W, Kirste R, Kaess F, Bryan I, Troha T, Bagal A, Reddy P, Hernandez-Balderrama LH, Franke A, Mita S, Chang C, Hoffmann A, Zgonik M, Collazo R, et al. Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications Applied Physics Letters. 108: 261106. DOI: 10.1063/1.4955033 |
0.682 |
|
2016 |
Lamprecht M, Grund C, Neuschl B, Thonke K, Bryan Z, Collazo R, Sitar Z. Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state Journal of Applied Physics. 119. DOI: 10.1063/1.4946828 |
0.532 |
|
2016 |
Reddy P, Washiyama S, Kaess F, Hayden Breckenridge M, Hernandez-Balderrama LH, Haidet BB, Alden D, Franke A, Sarkar B, Kohn E, Collazo R, Sitar Z. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies Journal of Applied Physics. 119. DOI: 10.1063/1.4945775 |
0.573 |
|
2016 |
Bryan I, Bryan Z, Mita S, Rice A, Hussey L, Shelton C, Tweedie J, Maria J, Collazo R, Sitar Z. The role of surface kinetics on composition and quality of AlGaN Journal of Crystal Growth. 451: 65-71. DOI: 10.1016/J.Jcrysgro.2016.06.055 |
0.817 |
|
2016 |
Tojo S, Yamamoto R, Tanaka R, Thieu QT, Togashi R, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Murakami H, Collazo R, Koukitu A, Monemar B, Sitar Z, Kumagai Y. Influence of high-temperature processing on the surface properties of bulk AlN substrates Journal of Crystal Growth. 446: 33-38. DOI: 10.1016/J.Jcrysgro.2016.04.030 |
0.745 |
|
2016 |
Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R, Sitar Z. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Journal of Crystal Growth. 438: 81-89. DOI: 10.1016/J.Jcrysgro.2015.12.022 |
0.674 |
|
2016 |
Lamprecht M, Grund C, Bauer S, Collazo R, Sitar Z, Thonke K. Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states Physica Status Solidi (B). 254: 1600338. DOI: 10.1002/Pssb.201600338 |
0.521 |
|
2015 |
Rigler M, Buh J, Hoffmann MP, Kirste R, Bobea M, Mita S, Gerhold MD, Collazo R, Sitar Z, Zgonik M. Optical characterization of Al- and N-polar AlN waveguides for integrated optics Applied Physics Express. 8. DOI: 10.7567/Apex.8.042603 |
0.68 |
|
2015 |
Losego MD, Paisley EA, Craft HS, Lam PG, Sachet E, Mita S, Collazo R, Sitar Z, Maria JP. Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces Journal of Materials Research. DOI: 10.1557/Jmr.2015.332 |
0.678 |
|
2015 |
Majkić A, Puc U, Franke A, Kirste R, Collazo R, Sitar Z, Zgonik M. Optical properties of aluminum nitride single crystals in the THz region Optical Materials Express. 5: 2106-2111. DOI: 10.1364/Ome.5.002106 |
0.517 |
|
2015 |
Reddy P, Bryan I, Bryan Z, Tweedie J, Washiyama S, Kirste R, Mita S, Collazo R, Sitar Z. Charge neutrality levels, barrier heights, and band offsets at polar AlGaN Applied Physics Letters. 107. DOI: 10.1063/1.4930026 |
0.696 |
|
2015 |
Haidet BB, Bryan I, Reddy P, Bryan Z, Collazo R, Sitar Z. A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN Journal of Applied Physics. 117. DOI: 10.1063/1.4923062 |
0.579 |
|
2015 |
Bryan Z, Bryan I, Mita S, Tweedie J, Sitar Z, Collazo R. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4922385 |
0.685 |
|
2015 |
Bryan Z, Bryan I, Xie J, Mita S, Sitar Z, Collazo R. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4917540 |
0.684 |
|
2015 |
Guo W, Kirste R, Bryan Z, Bryan I, Gerhold M, Collazo R, Sitar Z. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes Journal of Applied Physics. 117. DOI: 10.1063/1.4915903 |
0.526 |
|
2015 |
Guo W, Kirste R, Bryan I, Bryan Z, Hussey L, Reddy P, Tweedie J, Collazo R, Sitar Z. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode Applied Physics Letters. 106. DOI: 10.1063/1.4913705 |
0.79 |
|
2014 |
Bain LE, Collazo R, Hsu SH, Latham NP, Manfra MJ, Ivanisevic A. Surface topography and chemistry shape cellular behavior on wide band-gap semiconductors. Acta Biomaterialia. 10: 2455-62. PMID 24590161 DOI: 10.1016/J.Actbio.2014.02.038 |
0.311 |
|
2014 |
Hoffmann MP, Tweedie J, Kirste R, Bryan Z, Bryan I, Gerhold M, Sitar Z, Collazo R. Point defect management in GaN by Fermi-level control during growth Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2041018 |
0.554 |
|
2014 |
Callsen G, Wagner MR, Reparaz JS, Nippert F, Kure T, Kalinowski S, Hoffmann A, Ford MJ, Phillips MR, Dalmau RF, Schlesser R, Collazo R, Sitar Z. Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.205206 |
0.704 |
|
2014 |
Bryan Z, Bryan I, Gaddy BE, Reddy P, Hussey L, Bobea M, Guo W, Hoffmann M, Kirste R, Tweedie J, Gerhold M, Irving DL, Sitar Z, Collazo R. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters. 105. DOI: 10.1063/1.4903058 |
0.796 |
|
2014 |
Reddy P, Bryan I, Bryan Z, Tweedie J, Kirste R, Collazo R, Sitar Z. Schottky contact formation on polar and non-polar AlN Journal of Applied Physics. 116. DOI: 10.1063/1.4901954 |
0.561 |
|
2014 |
Bryan I, Bryan Z, Bobea M, Hussey L, Kirste R, Collazo R, Sitar Z. Homoepitaxial AlN thin films deposited on m-plane (1100) AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4897233 |
0.806 |
|
2014 |
Reddy P, Bryan I, Bryan Z, Guo W, Hussey L, Collazo R, Sitar Z. The effect of polarity and surface states on the Fermi level at III-nitride surfaces Journal of Applied Physics. 116. DOI: 10.1063/1.4896377 |
0.786 |
|
2014 |
Gaddy BE, Bryan Z, Bryan I, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Kirste R, Sitar Z, Collazo R, Irving DL. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Applied Physics Letters. 104. DOI: 10.1063/1.4878657 |
0.72 |
|
2014 |
Bryan Z, Bryan I, Bobea M, Hussey L, Kirste R, Sitar Z, Collazo R. Exciton transitions and oxygen as a donor in m -plane AlN homoepitaxial films Journal of Applied Physics. 115. DOI: 10.1063/1.4870284 |
0.784 |
|
2014 |
Guo W, Bryan Z, Xie J, Kirste R, Mita S, Bryan I, Hussey L, Bobea M, Haidet B, Gerhold M, Collazo R, Sitar Z. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates Journal of Applied Physics. 115: 103108. DOI: 10.1063/1.4868678 |
0.807 |
|
2014 |
Shelton CT, Sachet E, Paisley EA, Hoffmann MP, Rajan J, Collazo R, Sitar Z, Maria JP. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures Journal of Applied Physics. 115. DOI: 10.1063/1.4863120 |
0.574 |
|
2014 |
Hussey L, White RM, Kirste R, Mita S, Bryan I, Guo W, Osterman K, Haidet B, Bryan Z, Bobea M, Collazo R, Sitar Z. Sapphire decomposition and inversion domains in N-polar aluminum nitride Applied Physics Letters. 104. DOI: 10.1063/1.4862982 |
0.802 |
|
2014 |
Paisley EA, Gaddy BE, Lebeau JM, Shelton CT, Biegalski MD, Christen HM, Losego MD, Mita S, Collazo R, Sitar Z, Irving DL, Maria JP. Smooth cubic commensurate oxides on gallium nitride Journal of Applied Physics. 115. DOI: 10.1063/1.4861172 |
0.697 |
|
2014 |
Hussey L, Bryan I, Kirste R, Guo W, Bryan Z, Mita S, Collazo R, Sitar Z. Direct observation of the polarity control mechanism in aluminum nitride grown on sapphire by aberration corrected scanning transmission electron microscopy Microscopy and Microanalysis. 20: 162-163. DOI: 10.1017/S1431927614002530 |
0.796 |
|
2014 |
Sochacki T, Bryan Z, Amilusik M, Bobea M, Fijalkowski M, Bryan I, Lucznik B, Collazo R, Weyher JL, Kucharski R, Grzegory I, Bockowski M, Sitar Z. HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties Journal of Crystal Growth. 394: 55-60. DOI: 10.1016/J.Jcrysgro.2014.02.020 |
0.614 |
|
2014 |
Kuittinen T, Tuomisto F, Kumagai Y, Nagashima T, Kinoshita T, Koukitu A, Collazo R, Sitar Z. Vacancy defects in UV-transparent HVPE-AlN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 405-407. DOI: 10.1002/Pssc.201300529 |
0.584 |
|
2014 |
Bryan I, Akouala CR, Tweedie J, Bryan Z, Rice A, Kirste R, Collazo R, Sitar Z. Surface preparation of non-polar single-crystalline AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 454-457. DOI: 10.1002/Pssc.201300401 |
0.547 |
|
2014 |
Kirste R, Mita S, Hoffmann MP, Hussey L, Guo W, Bryan I, Bryan Z, Tweedie J, Gerhold M, Hoffmann A, Collazo R, Sitar Z. Properties of AlN based lateral polarity structures Physica Status Solidi (C). 11: 261-264. DOI: 10.1002/Pssc.201300287 |
0.817 |
|
2014 |
Hoffmann MP, Kirste R, Mita S, Guo W, Tweedie J, Bobea M, Bryan I, Bryan Z, Gerhold M, Collazo R, Sitar Z. Growth and characterization of Al
x
Ga1−x
N lateral polarity structures Physica Status Solidi (a). 212: 1039-1042. DOI: 10.1002/Pssa.201431740 |
0.665 |
|
2013 |
Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. 103, 013701 (2013)]. Applied Physics Letters. 103: 89902. PMID 24046484 DOI: 10.1063/1.4819200 |
0.477 |
|
2013 |
Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Kinase detection with gallium nitride based high electron mobility transistors. Applied Physics Letters. 103: 13701. PMID 23918992 DOI: 10.1063/1.4812987 |
0.466 |
|
2013 |
Foster CM, Collazo R, Sitar Z, Ivanisevic A. Cell behavior on gallium nitride surfaces: peptide affinity attachment versus covalent functionalization. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 8377-84. PMID 23745578 DOI: 10.1021/La401503B |
0.486 |
|
2013 |
Makowski MS, Kim S, Gaillard M, Janes D, Manfra MJ, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. Applied Physics Letters. 102: 74102. PMID 23509411 DOI: 10.1063/1.4791788 |
0.471 |
|
2013 |
Foster CM, Collazo R, Sitar Z, Ivanisevic A. Aqueous stability of Ga- and N-polar gallium nitride. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 216-20. PMID 23227805 DOI: 10.1021/La304039N |
0.543 |
|
2013 |
Sochacki T, Bryan Z, Amilusik M, Collazo R, Lucznik B, Weyher JL, Nowak G, Sadovyi B, Kamler G, Kucharski R, Zajac M, Doradzinski R, Dwilinski R, Grzegory I, Bockowski M, et al. Preparation of free-standing gan substrates from thick gan layers crystallized by hydride vapor phase epitaxy on ammonothermally grown GaN seeds Applied Physics Express. 6. DOI: 10.7567/Apex.6.075504 |
0.574 |
|
2013 |
Hoffmann MP, Gerhold M, Kirste R, Rice A, Akouala C, Xie JQ, Mita S, Collazo R, Sitar Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation Proceedings of Spie. 8631. DOI: 10.1117/12.2008827 |
0.72 |
|
2013 |
Kirste R, Hoffmann MP, Sachet E, Bobea M, Bryan Z, Bryan I, Nenstiel C, Hoffmann A, Maria JP, Collazo R, Sitar Z. Ge doped GaN with controllable high carrier concentration for plasmonic applications Applied Physics Letters. 103. DOI: 10.1063/1.4848555 |
0.56 |
|
2013 |
Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R, Sitar Z, Maria J. Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)] Journal of Applied Physics. 114: 239901. DOI: 10.1063/1.4842135 |
0.445 |
|
2013 |
Gaddy BE, Bryan Z, Bryan I, Kirste R, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Sitar Z, Collazo R, Irving DL. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN Applied Physics Letters. 103. DOI: 10.1063/1.4824731 |
0.722 |
|
2013 |
Chichibu SF, Hazu K, Ishikawa Y, Tashiro M, Ohtomo T, Furusawa K, Uedono A, Mita S, Xie J, Collazo R, Sitar Z. Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements Applied Physics Letters. 103: 142103. DOI: 10.1063/1.4823826 |
0.685 |
|
2013 |
Neuschl B, Thonke K, Feneberg M, Goldhahn R, Wunderer T, Yang Z, Johnson NM, Xie J, Mita S, Rice A, Collazo R, Sitar Z. Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions Applied Physics Letters. 103. DOI: 10.1063/1.4821183 |
0.661 |
|
2013 |
Kirste R, Mita S, Hussey L, Hoffmann MP, Guo W, Bryan I, Bryan Z, Tweedie J, Xie J, Gerhold M, Collazo R, Sitar Z. Polarity control and growth of lateral polarity structures in AlN Applied Physics Letters. 102: 181913. DOI: 10.1063/1.4804575 |
0.815 |
|
2013 |
Xie J, Mita S, Bryan Z, Guo W, Hussey L, Moody B, Schlesser R, Kirste R, Gerhold M, Collazo R, Sitar Z. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4803689 |
0.791 |
|
2013 |
Rigler M, Zgonik M, Hoffmann MP, Kirste R, Bobea M, Collazo R, Sitar Z, Mita S, Gerhold M. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4800554 |
0.672 |
|
2013 |
Bobea M, Tweedie J, Bryan I, Bryan Z, Rice A, Dalmau R, Xie J, Collazo R, Sitar Z. X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN Journal of Applied Physics. 113. DOI: 10.1063/1.4798352 |
0.718 |
|
2013 |
Kirste R, Hoffmann MP, Tweedie J, Bryan Z, Callsen G, Kure T, Nenstiel C, Wagner MR, Collazo R, Hoffmann A, Sitar Z. Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements Journal of Applied Physics. 113: 103504. DOI: 10.1063/1.4794094 |
0.561 |
|
2013 |
Bryan I, Rice A, Hussey L, Bryan Z, Bobea M, Mita S, Xie J, Kirste R, Collazo R, Sitar Z. Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4792694 |
0.801 |
|
2013 |
Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R, Sitar Z, Maria JP. Epitaxial PbxZr1-xTiO3 on GaN Journal of Applied Physics. 113. DOI: 10.1063/1.4792599 |
0.603 |
|
2013 |
Guo W, Xie J, Akouala C, Mita S, Rice A, Tweedie J, Bryan I, Collazo R, Sitar Z. Comparative study of etching high crystalline quality AlN and GaN Journal of Crystal Growth. 366: 20-25. DOI: 10.1016/J.Jcrysgro.2012.12.141 |
0.687 |
|
2012 |
Railsback JG, Singh A, Pearce RC, McKnight TE, Collazo R, Sitar Z, Yingling YG, Melechko AV. Weakly charged cationic nanoparticles induce DNA bending and strand separation. Advanced Materials (Deerfield Beach, Fla.). 24: 4261-5. PMID 22711427 DOI: 10.1002/Adma.201104891 |
0.436 |
|
2012 |
Raghothamachar B, Dalmau R, Moody B, Craft S, Schlesser R, Xie J, Collazo R, Dudley M, Sitar Z. Low defect density bulk AlN substrates for high performance electronics and optoelectronics Materials Science Forum. 717: 1287-1290. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1287 |
0.733 |
|
2012 |
Nagashima T, Kubota Y, Kinoshita T, Kumagai Y, Xie J, Collazo R, Murakami H, Okamoto H, Koukitu A, Sitar Z. Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport Applied Physics Express. 5: 125501. DOI: 10.1143/Apex.5.125501 |
0.559 |
|
2012 |
Callsen G, Wagner MR, Kure T, Reparaz JS, Bügler M, Brunnmeier J, Nenstiel C, Hoffmann A, Hoffmann M, Tweedie J, Bryan Z, Aygun S, Kirste R, Collazo R, Sitar Z. Optical signature of Mg-doped GaN: Transfer processes Physical Review B. 86. DOI: 10.1103/Physrevb.86.075207 |
0.539 |
|
2012 |
Hussey L, Mita S, Xie J, Guo W, Akouala CR, Rajan J, Bryan I, Collazo R, Sitar Z. Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition Journal of Applied Physics. 112. DOI: 10.1063/1.4768526 |
0.823 |
|
2012 |
Paisley EA, Shelton TC, Mita S, Collazo R, Christen HM, Sitar Z, Biegalski MD, Maria JP. Surfactant assisted growth of MgO films on GaN Applied Physics Letters. 101. DOI: 10.1063/1.4748886 |
0.7 |
|
2012 |
Collazo R, Xie J, Gaddy BE, Bryan Z, Kirste R, Hoffmann M, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Irving DL, Sitar Z. On the origin of the 265 nm absorption band in AlN bulk crystals Applied Physics Letters. 100. DOI: 10.1063/1.4717623 |
0.726 |
|
2012 |
Bryan Z, Hoffmann M, Tweedie J, Kirste R, Callsen G, Bryan I, Rice A, Bobea M, Mita S, Xie J, Sitar Z, Collazo R. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN Journal of Electronic Materials. 42: 815-819. DOI: 10.1007/S11664-012-2342-9 |
0.672 |
|
2012 |
Tweedie J, Collazo R, Rice A, Mita S, Xie J, Akouala RC, Sitar Z. Schottky barrier and interface chemistry for Ni contacted to Al 0.8Ga 0.2N grown on c-oriented AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 584-587. DOI: 10.1002/Pssc.201100435 |
0.694 |
|
2012 |
Neuschl B, Thonke K, Feneberg M, Mita S, Xie J, Dalmau R, Collazo R, Sitar Z. Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN Physica Status Solidi (B). 249: 511-515. DOI: 10.1002/Pssb.201100381 |
0.788 |
|
2012 |
Railsback JG, Singh A, Pearce RC, McKnight TE, Collazo R, Sitar Z, Yingling YG, Melechko AV. Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012) Advanced Materials. 24: 4221-4221. DOI: 10.1002/Adma.201290188 |
0.423 |
|
2011 |
Paisley EA, Losego MD, Gaddy BE, Tweedie JS, Collazo R, Sitar Z, Irving DL, Maria JP. Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions. Nature Communications. 2: 461. PMID 21897372 DOI: 10.1038/Ncomms1470 |
0.57 |
|
2011 |
Dalmau R, Moody B, Schlesser R, Mita S, Xie J, Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Tweedie J, Sitar Z. Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society. 158: H530-H535. DOI: 10.1149/1.3560527 |
0.787 |
|
2011 |
Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. Fermi level effect on strain of Si-doped GaN Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.878726 |
0.676 |
|
2011 |
Acharya AR, Buegler M, Atalay R, Dietz N, Thoms BD, Tweedie JS, Collazo R. Observation of NH2 species on tilted InN (01 1̄ 1) facets Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3596619 |
0.39 |
|
2011 |
Kirste R, Collazo R, Callsen G, Wagner MR, Kure T, Sebastian Reparaz J, Mita S, Xie J, Rice A, Tweedie J, Sitar Z, Hoffmann A. Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Journal of Applied Physics. 110: 093503. DOI: 10.1063/1.3656987 |
0.593 |
|
2011 |
Xie J, Mita S, Hussey L, Rice A, Tweedie J, Lebeau J, Collazo R, Sitar Z. On the strain in n-type GaN Applied Physics Letters. 99. DOI: 10.1063/1.3647772 |
0.808 |
|
2011 |
Xie J, Mita S, Rice A, Tweedie J, Hussey L, Collazo R, Sitar Z. Strain in Si doped GaN and the Fermi level effect Applied Physics Letters. 98. DOI: 10.1063/1.3589978 |
0.799 |
|
2011 |
Craft HS, Rice AL, Collazo R, Sitar Z, Maria JP. Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN Applied Physics Letters. 98. DOI: 10.1063/1.3554762 |
0.589 |
|
2011 |
Buegler M, Gamage S, Atalay R, Wang J, Senevirathna MKI, Kirste R, Xu T, Jamil M, Ferguson I, Tweedie J, Collazo R, Hoffmann A, Sitar Z, Dietz N. Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2059-2062. DOI: 10.1002/Pssc.201001067 |
0.54 |
|
2011 |
Mita S, Collazo R, Rice A, Tweedie J, Xie J, Dalmau R, Sitar Z. Impact of gallium supersaturation on the growth of N-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2078-2080. DOI: 10.1002/Pssc.201001063 |
0.795 |
|
2011 |
Xie J, Mia S, Dalmau R, Collazo R, Rice A, Tweedie J, Sitar Z. Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2407-2409. DOI: 10.1002/Pssc.201001009 |
0.75 |
|
2011 |
Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Progress on n-type doping of algan alloys on aln single crystal substrates for uv optoelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2031-2033. DOI: 10.1002/Pssc.201000964 |
0.797 |
|
2011 |
Dalmau R, Moody B, Xie J, Collazo R, Sitar Z. Characterization of dislocation arrays in AlN single crystals grown by PVT Physica Status Solidi (a) Applications and Materials Science. 208: 1545-1547. DOI: 10.1002/Pssa.201000957 |
0.744 |
|
2011 |
Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Sitar Z, Dalmau R, Xie J, Mita S, Goldhahn R. Sharp bound and free exciton lines from homoepitaxial AlN Physica Status Solidi (a). 208: 1520-1522. DOI: 10.1002/Pssa.201000947 |
0.764 |
|
2010 |
Losego MD, Craft HS, Paisley EA, Mita S, Collazo R, Sitar Z, Maria JP. Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux Journal of Materials Research. 25: 670-679. DOI: 10.1557/Jmr.2010.0096 |
0.68 |
|
2010 |
Buegler M, Gamage S, Atalay R, Wang J, Senevirathna I, Kirste R, Xu T, Jamil M, Ferguson I, Tweedie J, Collazo R, Hoffmann A, Sitar Z, Dietz N. Reactor pressure - Growth temperature relation for InN epilayers grown by high-pressure CVD Proceedings of Spie - the International Society For Optical Engineering. 7784. DOI: 10.1117/12.860952 |
0.525 |
|
2010 |
Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. The effect of N-polar GaN domains as Ohmic contacts Applied Physics Letters. 97. DOI: 10.1063/1.3491173 |
0.702 |
|
2010 |
Rice A, Collazo R, Tweedie J, Dalmau R, Mita S, Xie J, Sitar Z. Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3467522 |
0.795 |
|
2010 |
Tweedie J, Collazo R, Rice A, Xie J, Mita S, Dalmau R, Sitar Z. X-ray characterization of composition and relaxation of Alx Ga1-xN (0<x<1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3457149 |
0.781 |
|
2010 |
Rice A, Collazo R, Tweedie J, Xie J, Mita S, Sitar Z. Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0≤x≤1) deposition by LP OMVPE Journal of Crystal Growth. 312: 1321-1324. DOI: 10.1016/J.Jcrysgro.2009.09.011 |
0.661 |
|
2010 |
Kirste R, Wagner MR, Schulze JH, Strittmatter A, Collazo R, Sitar Z, Alevli M, Dietz N, Hoffmann A. Optical properties of InN grown on templates with controlled surface polarities Physica Status Solidi (a) Applications and Materials Science. 207: 2351-2354. DOI: 10.1002/Pssa.201026086 |
0.616 |
|
2010 |
Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity Physica Status Solidi (a) Applications and Materials Science. 207: 45-48. DOI: 10.1002/Pssa.200982629 |
0.788 |
|
2009 |
Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN bulk crystals in m- and c-orientation Journal of Crystal Growth. 312: 58-63. DOI: 10.1016/J.Jcrysgro.2009.10.008 |
0.728 |
|
2009 |
Mita S, Collazo R, Sitar Z. Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition Journal of Crystal Growth. 311: 3044-3048. DOI: 10.1016/J.Jcrysgro.2009.01.075 |
0.693 |
|
2009 |
Losego MD, Fitting Kourkoutis L, Mita S, Craft HS, Muller DA, Collazo R, Sitar Z, Maria JP. Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces Journal of Crystal Growth. 311: 1106-1109. DOI: 10.1016/J.Jcrysgro.2008.11.085 |
0.706 |
|
2008 |
Craft HS, Collazo R, Losego MD, Sitar Z, Maria JP. Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1507-1510. DOI: 10.1116/1.3000058 |
0.534 |
|
2008 |
Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Sitar Z. Different optical absorption edges in AlN bulk crystals grown in m- and c -orientations Applied Physics Letters. 93. DOI: 10.1063/1.2996413 |
0.728 |
|
2008 |
Mita S, Collazo R, Rice A, Dalmau RF, Sitar Z. Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2952027 |
0.779 |
|
2008 |
Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface Applied Physics Letters. 92. DOI: 10.1063/1.2887878 |
0.684 |
|
2008 |
Dietz N, Alevli M, Atalay R, Durkaya G, Collazo R, Tweedie J, Mita S, Sitar Z. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters. 92. DOI: 10.1063/1.2840192 |
0.708 |
|
2008 |
Liu F, Collazo R, Mita S, Duscher G, Pennycook S. Erratum: “The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence” [Appl. Phys. Lett. 91, 203115 (2007)] Applied Physics Letters. 92: 029901. DOI: 10.1063/1.2836941 |
0.564 |
|
2008 |
Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces Journal of Crystal Growth. 310: 51-56. DOI: 10.1016/J.Jcrysgro.2007.10.002 |
0.688 |
|
2008 |
Ihlefeld JF, Losego MD, Collazo R, Borland WJ, Maria JP. Defect chemistry of nano-grained barium titanate films Journal of Materials Science. 43: 38-42. DOI: 10.1007/S10853-007-2135-3 |
0.377 |
|
2008 |
Collazo R, Mita S, Rice A, Dalmau R, Wellenius P, Muth J, Sitar Z. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1977-1979. DOI: 10.1002/Pssc.200778624 |
0.794 |
|
2008 |
Liu F, Collazo R, Mita S, Sitar Z, Pennycook SJ, Duscher G. Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Advanced Materials. 20: 2162-2165. DOI: 10.1002/Adma.200702522 |
0.675 |
|
2008 |
Liu F, Collazo R, Mita S, Sitar Z, Duscher G. Three-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots? Advanced Materials. 20: 134-137. DOI: 10.1002/Adma.200701288 |
0.646 |
|
2007 |
Li X, Collazo R, Sitar Z. Highly oriented diamond films grown at high growth rate Materials Research Society Symposium Proceedings. 956: 171-176. DOI: 10.1557/Proc-0956-J09-39 |
0.674 |
|
2007 |
Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial calcium oxide films deposited on gallium nitride surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1029-1032. DOI: 10.1116/1.2710243 |
0.676 |
|
2007 |
Collazo R, Mita S, Rice A, Dalmau RF, Sitar Z. Simultaneous growth of a GaN pn lateral polarity junction by polar selective doping Applied Physics Letters. 91. DOI: 10.1063/1.2816893 |
0.796 |
|
2007 |
Liu F, Collazo R, Mita S, Sitar Z, Duscher G, Pennycook SJ. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Applied Physics Letters. 91. DOI: 10.1063/1.2815748 |
0.699 |
|
2007 |
Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy Journal of Applied Physics. 102. DOI: 10.1063/1.2785022 |
0.685 |
|
2007 |
Dalmau R, Collazo R, Mita S, Sitar Z. X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution Journal of Electronic Materials. 36: 414-419. DOI: 10.1007/S11664-006-0044-X |
0.771 |
|
2007 |
Collazo R, Mita S, Dalmau R, Sitar Z. Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2597-2600. DOI: 10.1002/Pssc.200674874 |
0.801 |
|
2007 |
Mita S, Collazo R, Dalmau R, Sitar Z. Growth of highly resistive Ga-polar GaN by LP-MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2260-2263. DOI: 10.1002/Pssc.200674837 |
0.802 |
|
2006 |
Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z. Growth of large AlN single crystals along the [0001] direction Materials Research Society Symposium Proceedings. 892: 499-504. DOI: 10.1557/Proc-0892-Ff21-01 |
0.568 |
|
2006 |
Craft HS, Collazo R, Sitar Z, Maria JP. Molecular beam epitaxy of Sm 2O 3, Dy 2O 3, and Ho 2O 3 on Si (111) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2105-2110. DOI: 10.1116/1.2216721 |
0.56 |
|
2006 |
Aleksov A, Collazo R, Mita S, Schlesser R, Sitar Z. Current-voltage characteristics of n∕n lateral polarity junctions in GaN Applied Physics Letters. 89: 052117. DOI: 10.1063/1.2244046 |
0.694 |
|
2006 |
Craft HS, Ihlefeld JF, Losego MD, Collazo R, Sitar Z, Maria JP. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy Applied Physics Letters. 88. DOI: 10.1063/1.2201041 |
0.601 |
|
2006 |
Collazo R, Mita S, Aleksov A, Schlesser R, Sitar Z. Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers Journal of Crystal Growth. 287: 586-590. DOI: 10.1016/J.Jcrysgro.2005.10.080 |
0.705 |
|
2006 |
Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z. Seeded growth of AlN on N- and Al-polar 〈0001〉 AlN seeds by physical vapor transport Journal of Crystal Growth. 286: 205-208. DOI: 10.1016/J.Jcrysgro.2005.10.074 |
0.566 |
|
2006 |
Li X, Perkins J, Collazo R, Nemanich RJ, Sitar Z. Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD Diamond and Related Materials. 15: 1784-1788. DOI: 10.1016/J.Diamond.2006.09.008 |
0.653 |
|
2006 |
Govindaraju N, Aleksov A, Li X, Okuzumi F, Wolter SD, Collazo R, Prater JT, Sitar Z. Comparative study of textured diamond films by thermal conductivity measurements Applied Physics a: Materials Science and Processing. 85: 331-335. DOI: 10.1007/S00339-006-3697-7 |
0.721 |
|
2005 |
Mita S, Collazo R, Schlesser R, Sitar Z. Polarity control of GaN films grown by metal organic chemical vapor deposition on (0001) sapphire substrates Materials Research Society Symposium Proceedings. 831: 167-172. DOI: 10.1557/Proc-831-E3.20 |
0.712 |
|
2005 |
Berkman E, Collazo R, Schiesser R, Sitar Z. Growth of GaN from elemental gallium and ammonia via modified sandwich growth technique Materials Research Society Symposium Proceedings. 831: 727-732. DOI: 10.1557/Proc-831-E11.38 |
0.691 |
|
2005 |
Mita S, Collazo R, Schlesser R, Sitar Z. Polarity Control of LP-MOVPE GaN using N 2 the Carrier Gas Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff27-06 |
0.653 |
|
2005 |
Schlesser R, Dalmau R, Zhuang D, Collazo R, Sitar Z. Crucible materials for growth of aluminum nitride crystals Journal of Crystal Growth. 281: 75-80. DOI: 10.1016/J.Jcrysgro.2005.03.014 |
0.723 |
|
2005 |
Collazo R, Mita S, Schiesser R, Sitar Z. Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy Physica Status Solidi C: Conferences. 2: 2117-2120. DOI: 10.1002/Pssc.200461546 |
0.712 |
|
2004 |
Li H, Chandrasekaran H, Sunkara MK, Collazo R, Sitar Z, Stukowski M, Rajan K. Self-oriented Growth of GaN Films on Molten Gallium Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.34 |
0.577 |
|
2004 |
Collazo R, Schlesser R, Sitar Z. High field transport in AlN International Journal of High Speed Electronics and Systems. 14: 155-174. DOI: 10.1142/S0129156404002284 |
0.534 |
|
2004 |
Brenner DW, Schlesser R, Sitar Z, Dalmau R, Collazo R, Li Y. Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport Surface Science. 560. DOI: 10.1016/J.Susc.2004.05.003 |
0.723 |
|
2003 |
Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Sitar Z. Transmission electron miscroscopy study of the fused silicon/diamond interface Materials Research Society Symposium - Proceedings. 768: 39-44. DOI: 10.1557/Proc-768-G2.9 |
0.689 |
|
2003 |
Chang CS, Chattopadhyay S, Chen LC, Chen KH, Chen CW, Chen YF, Collazo R, Sitar Z. Band-gap dependence of field emission from one-dimensional nanostructures grown onn-type andp-type silicon substrates Physical Review B. 68. DOI: 10.1103/Physrevb.68.125322 |
0.56 |
|
2003 |
Collazo R, Schlesser R, Roskowski A, Miraglia P, Davis RF, Sitar Z. Electron energy distribution during high-field transport in AIN Journal of Applied Physics. 93: 2765-2771. DOI: 10.1063/1.1543633 |
0.532 |
|
2003 |
Wolter SD, Borca-Tasciuc DA, Chen G, Govindaraju N, Collazo R, Okuzumi F, Prater JT, Sitar Z. Thermal conductivity of epitaxially textured diamond films Diamond and Related Materials. 12: 61-64. DOI: 10.1016/S0925-9635(02)00248-0 |
0.716 |
|
2002 |
Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Observations of electron velocity overshoot during high-field transport in AlN Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L10.2 |
0.518 |
|
2002 |
Yushin GN, Kvit AV, Collazo R, Sitar Z. SiC to SiC wafer bonding Materials Research Society Symposium - Proceedings. 742: 91-95. DOI: 10.1557/Proc-742-K2.5 |
0.667 |
|
2002 |
Collazo R, Liang M, Schlesser R, Sitar Z. The role of adsorbates on the field emission properties of single-walled carbon nanotubes Materials Research Society Symposium - Proceedings. 706: 119-124. DOI: 10.1557/Proc-706-Z5.7.1 |
0.503 |
|
2002 |
Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Stoner BR, Sitar Z. Wafer bonding of diamond films to silicon for silicon-on-insulator technology Materials Research Society Symposium - Proceedings. 686: 69-74. DOI: 10.1557/Proc-686-A2.6 |
0.678 |
|
2002 |
Collazo R, Schlesser R, Sitar Z. Experimental observation of electron velocity overshoot in AlN Applied Physics Letters. 81: 5189-5191. DOI: 10.1063/1.1534407 |
0.542 |
|
2002 |
Yushin GN, Wolter SD, Kvit AV, Collazo R, Stoner BR, Prater JT, Sitar Z. Study of fusion bonding of diamond to silicon for silicon-on-diamond technology Applied Physics Letters. 81: 3275-3277. DOI: 10.1063/1.1516636 |
0.682 |
|
2002 |
Collazo R, Schlesser R, Sitar Z. Role of adsorbates in field emission from nanotubes Diamond and Related Materials. 11: 769-773. DOI: 10.1016/S0925-9635(01)00585-4 |
0.502 |
|
2001 |
Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Electron transport in AlN under high electric fields Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I6.45.1 |
0.538 |
|
2001 |
Collazo R, Schlesser R, Sitar Z. Two field-emission states of single-walled carbon nanotubes Applied Physics Letters. 78: 2058-2060. DOI: 10.1063/1.1361089 |
0.497 |
|
2000 |
Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Hot Electron Transport in AlN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.33 |
0.479 |
|
2000 |
Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Hot electron transport in AlN Journal of Applied Physics. 88: 5865-5869. DOI: 10.1063/1.1318386 |
0.523 |
|
2000 |
Schiesser R, Collazo R, Bower C, Zhou O, Sitar Z. Energy distribution of field emitted electrons from carbon nanotubes Diamond and Related Materials. 9: 1201-1204. DOI: 10.1016/S0925-9635(99)00277-0 |
0.539 |
|
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