Year |
Citation |
Score |
2015 |
Coffie R. Calculating drain delay in high electron mobility transistors Solid-State Electronics. 114: 98-103. DOI: 10.1016/J.Sse.2015.08.016 |
0.354 |
|
2007 |
Heying B, Smorchkova IP, Coffie R, Gambin V, Chen YC, Sutton W, Lam T, Kahr MS, Sikorski KS, Wojtowicz M. In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy Electronics Letters. 43: 779-780. DOI: 10.1049/El:20071211 |
0.475 |
|
2004 |
Chini A, Buttari D, Coffie R, Shen L, Heikman S, Chakraborty A, Keller S, Mishra UK. Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs Ieee Electron Device Letters. 25: 229-231. DOI: 10.1109/Led.2004.826525 |
0.759 |
|
2004 |
Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, DenBaars SP, Mishra UK. High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs without Surface Passivation Ieee Electron Device Letters. 25: 7-9. DOI: 10.1109/Led.2003.821673 |
0.766 |
|
2004 |
Chini A, Buttari D, Coffie R, Heikman S, Keller S, Mishra UK. 12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate Electronics Letters. 40: 73-74. DOI: 10.1049/El:20040017 |
0.56 |
|
2004 |
Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, Denbaars SP, Mishra UK. Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design Journal of Electronic Materials. 33: 422-425. DOI: 10.1007/S11664-004-0195-6 |
0.787 |
|
2003 |
Paidi V, Xie S, Coffie R, Moran B, Heikman S, Keller S, Chini A, DenBaars SP, Mishra UK, Long S, Rodwell MJW. High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology Ieee Transactions On Microwave Theory and Techniques. 51: 643-652. DOI: 10.1109/Tmtt.2002.807682 |
0.438 |
|
2003 |
Xie S, Paidi V, Coffie R, Keller S, Heikman S, Moran B, Chini A, DenBaars SP, Mishra U, Long S, Rodwell MJW. High-linearity class B power amplifiers in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 13: 284-286. DOI: 10.1109/Lmwc.2003.811682 |
0.604 |
|
2003 |
Buttari D, Chini A, Palacios T, Coffie R, Shen L, Xing H, Heikman S, McCarthy L, Chakraborty A, Keller S, Mishra UK. Origin of etch delay time in Cl 2 dry etching of AlGaN/GaN structures Applied Physics Letters. 83: 4779-4781. DOI: 10.1063/1.1632035 |
0.703 |
|
2003 |
Coffie R, Shen L, Parish G, Chini A, Buttari D, Heikman S, Keller S, Mishra UK. Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz Electronics Letters. 39: 1419-1420. DOI: 10.1049/El:20030872 |
0.766 |
|
2003 |
Chini A, Coffie R, Meneghesso G, Zanoni E, Buttari D, Heikman S, Keller S, Mishra UK. 2.1 A/mm current density AlGaN/GaN HEMT Electronics Letters. 39: 625-626. DOI: 10.1049/El:20030382 |
0.583 |
|
2002 |
Coffie R, Buttari D, Heikman S, Keller S, Chini A, Shen L, Mishra UK. p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) Ieee Electron Device Letters. 23: 588-590. DOI: 10.1109/Led.2002.803764 |
0.752 |
|
2002 |
Zheng C, Coffie R, Buttari D, Champlain J, Mishra UK. Oxidation control of GaAs pHEMTs for high efficiency applications Ieee Electron Device Letters. 23: 380-382. DOI: 10.1109/Led.2002.1015203 |
0.627 |
|
2002 |
Jiménez A, Buttari D, Jena D, Coffíe R, Heikman S, Zhang NQ, Shen L, Calleja E, Muñoz E, Speck J, Mishra UK. Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs Ieee Electron Device Letters. 23: 306-308. DOI: 10.1109/Led.2002.1004217 |
0.664 |
|
2002 |
Buttari D, Chini A, Meneghesso G, Zanoni E, Chavarkar P, Coffie R, Zhang NQ, Heikman S, Shen L, Xing H, Zheng C, Mishra UK. Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 118-120. DOI: 10.1109/55.988810 |
0.785 |
|
2002 |
Buttari D, Chini A, Meneghesso G, Zanoni E, Moran B, Heikman S, Zhang NQ, Shen L, Coffie R, DenBaars SP, Mishra UK. Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs Ieee Electron Device Letters. 23: 76-78. DOI: 10.1109/55.981311 |
0.637 |
|
2002 |
Jena D, Heikman S, Green D, Buttari D, Coffie R, Xing H, Keller S, DenBaars S, Speck JS, Mishra UK, Smorchkova I. Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys Applied Physics Letters. 81: 4395-4397. DOI: 10.1063/1.1526161 |
0.65 |
|
2001 |
Shen L, Heikman S, Moran B, Coffie R, Zhang NQ, Buttari D, Smorchkova IP, Keller S, DenBaars SP, Mishra UK. AlGaN/AlN/GaN high-power microwave HEMT Ieee Electron Device Letters. 22: 457-459. DOI: 10.1109/55.954910 |
0.743 |
|
2001 |
Xing H, Keller S, Wu YF, McCarthy L, Smorchkova IP, Buttari D, Coffie R, Green DS, Parish G, Heikman S, Shen L, Zhang N, Xu JJ, Keller BP, DenBaars SP, et al. Gallium nitride based transistors Journal of Physics Condensed Matter. 13: 7139-7157. DOI: 10.1088/0953-8984/13/32/317 |
0.732 |
|
2001 |
Marchand H, Zhao L, Zhang N, Moran B, Coffie R, Mishra UK, Speck JS, DenBaars SP, Freitas JA. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors Journal of Applied Physics. 89: 7846-7851. DOI: 10.1063/1.1372160 |
0.357 |
|
2001 |
Heikman S, Keller S, Moran B, Coffie R, Denbaars SP, Mishra UK. Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN Physica Status Solidi (a) Applied Research. 188: 355-358. DOI: 10.1002/1521-396X(200111)188:1<355::Aid-Pssa355>3.0.Co;2-H |
0.489 |
|
2000 |
Chen C, Coffie R, Krishnamurthy K, Keller S, Rodwell M, Mishra UK. Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz Ieee Electron Device Letters. 21: 549-551. DOI: 10.1109/55.887461 |
0.559 |
|
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