☰

David A. Deen, Ph.D. - Publications

Affiliations: 
2011 University of Notre Dame, Notre Dame, IN, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter Physics
Tree Info Similar researchers PubMed Report error

21 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Deen DA, Miller RA, Osinsky AV, Downey BP, Storm DF, Meyer DJ, Katzer DS, Nepal N. Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors Journal of Applied Physics. 120: 235704. DOI: 10.1063/1.4972225  0.464
2016 Deen DA, Storm DF, Katzer DS, Bass R, Meyer DJ. Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture Applied Physics Letters. 109: 63504. DOI: 10.1063/1.4961009  0.518
2014 Deen DA, Olson EJ, Ebrish MA, Koester SJ. Graphene-based quantum capacitance wireless vapor sensors Ieee Sensors Journal. 14: 1459-1466. DOI: 10.1109/Jsen.2013.2295302  0.3
2014 Deen DA, Storm DF, Meyer DJ, Bass R, Binari SC, Gougousi T, Evans KR. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates Applied Physics Letters. 105. DOI: 10.1063/1.4895105  0.565
2014 Deen DA, Osinsky A, Miller R. Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors Applied Physics Letters. 104: 93506. DOI: 10.1063/1.4867169  0.345
2013 Meyer DJ, Deen DA, Storm DF, Ancona MG, Scott Katzer D, Bass R, Roussos JA, Downey BP, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR. High electron velocity submicrometer AlN/GaN MOS-hemts on freestanding GaN substrates Ieee Electron Device Letters. 34: 199-201. DOI: 10.1109/Led.2012.2228463  0.547
2013 Deen DA, Champlain JG, Koester SJ. Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4818754  0.437
2013 Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR, Smith DJ. Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Journal of Crystal Growth. 380: 14-17. DOI: 10.1016/J.Jcrysgro.2013.05.029  0.481
2012 Meyer DJ, Katzer DS, Bass R, Garces NY, Ancona MG, Deen DA, Storm DF, Binari SC. N-polar n + GaN cap development for low ohmic contact resistance to inverted HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 894-897. DOI: 10.1002/Pssc.201100431  0.456
2011 Deen DA, Champlain JG. High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman's method revised Applied Physics Letters. 99. DOI: 10.1063/1.3615279  0.394
2011 Deen DA, Storm DF, Bass R, Meyer DJ, Katzer DS, Binari SC, Lacis JW, Gougousi T. Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors Applied Physics Letters. 98. DOI: 10.1063/1.3531551  0.555
2011 Deen D, Storm D, Meyer D, Katzer DS, Bass R, Binari S, Gougousi T. AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2420-2423. DOI: 10.1002/Pssc.201001071  0.526
2011 Meyer DJ, Katzer DS, Deen DA, Storm DF, Binari SC, Gougousi T. HfO 2-insulated gate N-polar GaN HEMTs with high breakdown voltage Physica Status Solidi (a) Applications and Materials Science. 208: 1630-1633. DOI: 10.1002/Pssa.201001080  0.517
2010 Storm DF, Katzer DS, Deen DA, Bass R, Meyer DJ, Roussos JA, Binari SC, Paskova T, Preble EA, Evans KR. Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Solid-State Electronics. 54: 1470-1473. DOI: 10.1016/J.Sse.2010.05.041  0.534
2010 Deen DA, Storm DF, Katzer DS, Meyer DJ, Binari SC. Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Solid-State Electronics. 54: 613-615. DOI: 10.1016/J.Sse.2009.11.012  0.43
2009 Deen DA, Binari SC, Storm DF, Katzer DS, Roussos JA, Hackley JC, Gougousi T. AlN/GaN insulated gate HEMTs with HfO2 gate dielectric Electronics Letters. 45: 423-424. DOI: 10.1049/El.2009.3688  0.523
2008 Zimmermann T, Deen D, Cao Y, Simon J, Fay P, Jena D, Xing HG. AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance Ieee Electron Device Letters. 29: 661-664. DOI: 10.1109/Led.2008.923318  0.546
2008 Deen D, Zimmermann T, Cao Y, Jena D, Xing HG. 2.3 nm barrier AlN/GaN HEMTs with insulated gates Physica Status Solidi (C). 5: 2047-2049. DOI: 10.1002/Pssc.200878749  0.6
2008 Zimmermann T, Deen D, Cao Y, Jena D, Xing HG. Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs Physica Status Solidi (C). 5: 2030-2032. DOI: 10.1002/Pssc.200778724  0.577
2006 Dedigama AR, Deen D, Murphy SQ, Goel N, Keay JC, Santos MB, Suzuki K, Miyashita S, Hirayama Y. Current focusing in InSb heterostructures Physica E: Low-Dimensional Systems and Nanostructures. 34: 647-650. DOI: 10.1016/J.Physe.2006.03.050  0.433
2005 Kunets VP, Black WT, Mazur YI, Guzun D, Salamo GJ, Goel N, Mishima TD, Deen DA, Murphy SQ, Santos MB. Highly sensitive micro-Hall devices based on Al 0.12In 0.88SbInSb heterostructures Journal of Applied Physics. 98. DOI: 10.1063/1.1954867  0.382
Show low-probability matches.