Xiu Xing, Ph.D. - Publications
Affiliations: | 2013 | University of Notre Dame, Notre Dame, IN, United States |
Area:
Electronics and Electrical Engineering, General EngineeringYear | Citation | Score | |||
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2010 | Wang R, Saunier P, Xing X, Lian C, Gao X, Guo S, Snider G, Fay P, Jena D, Xing H. Gate-recessed enhancement-mode InAlN/AlN/GaN HEMTs with 1.9-A/mm drain current density and 800-ms/mm transconductance Ieee Electron Device Letters. 31: 1383-1385. DOI: 10.1109/Led.2010.2072771 | 0.467 | |||
2010 | Xing X, Fay PJ. Enhancement-mode pseudomorphic In0.22Ga0.78As-Channel MOSFETs with ultrathin inalp native oxide gate dielectric and a cutoff frequency of 60 GHz Ieee Electron Device Letters. 31: 1214-1216. DOI: 10.1109/Led.2010.2068034 | 0.462 | |||
2010 | Li G, Zimmermann T, Cao Y, Lian C, Xing X, Wang R, Fay P, Xing HG, Jena D. Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering Ieee Electron Device Letters. 31: 954-956. DOI: 10.1109/Led.2010.2052912 | 0.431 | |||
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