Year |
Citation |
Score |
2015 |
Sun Z, Luo B, Liu Z, Huang L, Liu B, Ma T, Gao B, Liu ZH, Chen YF, Huang JH, Luo Z. Effect of perfluorotributylamine-enriched alginate on nucleus pulposus cell: Implications for intervertebral disc regeneration. Biomaterials. 82: 34-47. PMID 26741882 DOI: 10.1016/j.biomaterials.2015.12.013 |
0.318 |
|
2001 |
Campbell SA, Hoilien N, Ma T, Chen F, Smith R, Gladfelter W. Transistors built with ZrO2 and HfO2 deposited from nitratos Materials Research Society Symposium - Proceedings. 670: K421-K426. DOI: 10.1557/Proc-670-K4.2 |
0.506 |
|
2001 |
Ma T, Campbell SA, Smith R, Hoilien N, He B, Gladfelter WL, Hobbs C, Buchanan D, Taylor C, Gribelyuk M, Tiner M, Coppel M, Lee JJ. Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates Ieee Transactions On Electron Devices. 48: 2348-2356. DOI: 10.1109/16.954476 |
0.507 |
|
2000 |
Smith RC, Hoilien N, Taylor CJ, Ma T, Campbell SA, Roberts JT, Copel M, Buchanan DA, Gribelyuk M, Gladfelter WL. Low temperature chemical vapor deposition of ZrO2 on Si(100) using anhydrous zirconium(IV) nitrate Journal of the Electrochemical Society. 147: 3472-3476. DOI: 10.1149/1.1393922 |
0.529 |
|
2000 |
Smith RC, Ma T, Hoilien N, Tsung LY, Bevan MJ, Colombo L, Roberts J, Campbell SA, Gladfelter WL. Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide Advanced Functional Materials. 10: 105-114. DOI: 10.1002/1099-0712(200005/10)10:3/5<105::Aid-Amo402>3.0.Co;2-J |
0.522 |
|
1999 |
Campbell SA, Kim HS, Gilmer DC, He B, Ma T, Gladfelter WL. Titanium dioxide (TiO2)-based gate insulators Ibm Journal of Research and Development. 43: 383-392. DOI: 10.1147/Rd.433.0383 |
0.507 |
|
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