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Inanc Meric, Ph.D. - Publications

Affiliations: 
2011 Electrical Engineering Columbia University, New York, NY 
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29 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Petrone N, Chari T, Meric I, Wang L, Shepard KL, Hone J. Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride. Acs Nano. 9: 8953-9. PMID 26261867 DOI: 10.1021/Acsnano.5B02816  0.709
2015 Gao Y, Shiue RJ, Gan X, Li L, Peng C, Meric I, Wang L, Szep A, Walker D, Hone J, Englund D. High-speed electro-optic modulator integrated with graphene-boron nitride heterostructure and photonic crystal nanocavity. Nano Letters. 15: 2001-5. PMID 25700231 DOI: 10.1021/Nl504860Z  0.523
2015 Chari T, Meric I, Dean C, Shepard K. Properties of Self-Aligned Short-Channel Graphene Field-Effect Transistors Based on Boron-Nitride-Dielectric Encapsulation and Edge Contacts Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2482823  0.696
2015 Petrone N, Meric I, Chari T, Shepard KL, Hone J. Graphene field-effect transistors for radio-frequency flexible electronics Ieee Journal of the Electron Devices Society. 3: 44-48. DOI: 10.1109/Jeds.2014.2363789  0.663
2013 Wang L, Meric I, Huang PY, Gao Q, Gao Y, Tran H, Taniguchi T, Watanabe K, Campos LM, Muller DA, Guo J, Kim P, Hone J, Shepard KL, Dean CR. One-dimensional electrical contact to a two-dimensional material. Science (New York, N.Y.). 342: 614-7. PMID 24179223 DOI: 10.1126/Science.1244358  0.67
2013 Petrone N, Meric I, Hone J, Shepard KL. Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates. Nano Letters. 13: 121-5. PMID 23256606 DOI: 10.1021/Nl303666M  0.698
2013 Meric I, Petrone N, Hone J, Shepard KL. Flexible graphene field-effect transistors for microwave electronics Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697801  0.695
2013 Meric I, Dean CR, Petrone N, Wang L, Hone J, Kim P, Shepard KL. Graphene field-effect transistors based on boron-nitride dielectrics Proceedings of the Ieee. 101: 1609-1619. DOI: 10.1109/JPROC.2013.2257634  0.704
2013 Rakheja S, Wang H, Palacios T, Meric I, Shepard K, Antoniadis D. A unified charge-current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration Technical Digest - International Electron Devices Meeting, Iedm. 5.5.1-5.5.4. DOI: 10.1109/IEDM.2013.6724568  0.58
2013 Islam S, Serov AY, Meric I, Shepard KL, Pop E. Substrate dependent high-field transport of graphene transistors Device Research Conference - Conference Digest, Drc. 35-36. DOI: 10.1109/DRC.2013.6633782  0.648
2013 Gan X, Shiue RJ, Gao Y, Meric I, Heinz TF, Shepard K, Hone J, Assefa S, Englund D. Chip-integrated ultrafast graphene photodetector with high responsivity Nature Photonics. 7: 883-887. DOI: 10.1038/Nphoton.2013.253  0.644
2012 Petrone N, Dean CR, Meric I, van der Zande AM, Huang PY, Wang L, Muller D, Shepard KL, Hone J. Chemical vapor deposition-derived graphene with electrical performance of exfoliated graphene. Nano Letters. 12: 2751-6. PMID 22582828 DOI: 10.1021/Nl204481S  0.704
2012 Young AF, Dean CR, Meric I, Sorgenfrei S, Ren H, Watanabe K, Taniguchi T, Hone J, Shepard KL, Kim P. Electronic compressibility of layer-polarized bilayer graphene Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.235458  0.73
2012 Dean C, Young AF, Wang L, Meric I, Lee GH, Watanabe K, Taniguchi T, Shepard K, Kim P, Hone J. Graphene based heterostructures Solid State Communications. 152: 1275-1282. DOI: 10.1016/J.Ssc.2012.04.021  0.729
2011 Lin YM, Valdes-Garcia A, Han SJ, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA. Wafer-scale graphene integrated circuit. Science (New York, N.Y.). 332: 1294-7. PMID 21659599 DOI: 10.1126/Science.1204428  0.557
2011 Meric I, Dean CR, Young AF, Baklitskaya N, Tremblay NJ, Nuckolls C, Kim P, Shepard KL. Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements. Nano Letters. 11: 1093-7. PMID 21271736 DOI: 10.1021/Nl103993Z  0.678
2011 Meric I, Dean CR, Han SJ, Wang L, Jenkins KA, Hone J, Shepard KL. High-frequency performance of graphene field effect transistors with saturating IV-characteristics Technical Digest - International Electron Devices Meeting, Iedm. 2.1.1-2.1.4. DOI: 10.1109/IEDM.2011.6131472  0.63
2010 Dean CR, Young AF, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard KL, Hone J. Boron nitride substrates for high-quality graphene electronics. Nature Nanotechnology. 5: 722-6. PMID 20729834 DOI: 10.1038/Nnano.2010.172  0.762
2010 Jia Z, Meric I, Shepard KL, Kymissis I. Doping and illumination dependence of 1/f noise in pentacene thin-film transistors Ieee Electron Device Letters. 31: 1050-1052. DOI: 10.1109/Led.2010.2052779  0.538
2010 Meric I, Dean C, Young A, Hone J, Kim P, Shepard KL. Graphene field-effect transistors based on boron nitride gate dielectrics Technical Digest - International Electron Devices Meeting, Iedm. 23.2.1-23.2.4. DOI: 10.1109/IEDM.2010.5703419  0.695
2010 Chen CJ, Husko CA, Meric I, Shepard KL, Wong CW, Green WMJ, Vlasov YA, Assefa S. Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition Applied Physics Letters. 96. DOI: 10.1063/1.3308492  0.521
2009 Jia Z, Meric I, Shepard K, Kymissis I. Semiconductor-dielectric interfacial study using spectral-spatial photocurrent probes and 1/f noise probe in organic field effect transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378133  0.46
2009 Kim P, Han MY, Young AF, Meric I, Shepard KL. Graphene nanoribbon devices and quantum heterojunction devices Technical Digest - International Electron Devices Meeting, Iedm. 10.3.1-10.3.4. DOI: 10.1109/IEDM.2009.5424379  0.675
2009 Sorgenfrei S, Meric I, Banerjee S, Akey A, Rosenblatt S, Herman IP, Shepard KL. Controlled dielectrophoretic assembly of carbon nanotubes using real-time electrical detection Applied Physics Letters. 94. DOI: 10.1063/1.3077620  0.695
2009 Chen CJ, Husko CA, Meric I, Shepard KL, Wong CW, Green WMJ, Vlasov YA, Assefa S. Digital deterministic control of slow light in photonic crystal waveguide membranes through atomic layer deposition Optics Infobase Conference Papers.  0.448
2008 Meric I, Han MY, Young AF, Ozyilmaz B, Kim P, Shepard KL. Current saturation in zero-bandgap, top-gated graphene field-effect transistors. Nature Nanotechnology. 3: 654-9. PMID 18989330 DOI: 10.1038/Nnano.2008.268  0.735
2008 Meric I, Baklitskaya N, Kim P, Shepard KL. RF performance of top-gated, zero-bandgap graphene field-effect transistors Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796738  0.669
2008 Shepard KL, Meric I, Kim P. Characterization and modeling of graphene field-effect devices Ieee/Acm International Conference On Computer-Aided Design, Digest of Technical Papers, Iccad. 406-411. DOI: 10.1109/ICCAD.2008.4681606  0.696
2007 Meric I, Caruso V, Caldwell R, Hone J, Shepard KL, Wind SJ. Hybrid carbon nanotube-silicon complementary metal oxide semiconductor circuits Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2577-2580. DOI: 10.1116/1.2800322  0.576
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