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Mansun J. Chan - Publications

Affiliations: 
Electronic and Computer Engineering Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 
Area:
Electronics and Electrical Engineering
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Year Citation  Score
2023 Zhang L, Chan M. Editorial: Hardware implementation of spike-based neuromorphic computing and its design methodologies. Frontiers in Neuroscience. 16: 1113983. PMID 36685232 DOI: 10.3389/fnins.2022.1113983  0.358
2020 Estrada CJ, Xiao Y, Xu C, Chan M. Physical Model of Current-Assisted Photonic Demodulator (CAPD) for Time-of-Flight CMOS Image Sensor Ieee Transactions On Electron Devices. 67: 2825-2830. DOI: 10.1109/Ted.2020.2995349  0.349
2020 Hu H, Liu D, Chen X, Dong D, Cui X, Liu M, Lin X, Zhang L, Chan M. A Compact Phase Change Memory Model With Dynamic State Variables Ieee Transactions On Electron Devices. 67: 133-139. DOI: 10.1109/Ted.2019.2956193  0.603
2020 Ahmed Z, Shi Q, Ma Z, Zhang L, Guo H, Chan M. Analytical Monolayer MoS 2 MOSFET Modeling Verified by First Principle Simulations Ieee Electron Device Letters. 41: 171-174. DOI: 10.1109/Led.2019.2952382  0.59
2020 Chen X, Hu H, Huang X, Cai W, Liu M, Lam C, Lin X, Zhang L, Chan M. A SPICE Model of Phase Change Memory for Neuromorphic Circuits Ieee Access. 8: 95278-95287. DOI: 10.1109/Access.2020.2995907  0.632
2020 Cheng W, He M, Lei S, Wang L, Wu J, Zeng F, Hu Q, Wang Q, Zhao F, Chan M, Xia G(, Yu H. Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors Semiconductor Science and Technology. 35: 45010. DOI: 10.1088/1361-6641/Ab73Ea  0.33
2019 Xiao Y, Ahmed Z, Ma Z, Zhou C, Zhang L, Chan M. Low Temperature Synthesis of High-Density Carbon Nanotubes on Insulating Substrate. Nanomaterials (Basel, Switzerland). 9. PMID 30901961 DOI: 10.3390/Nano9030473  0.454
2019 Zhang L, Ma C, Xiao Y, Zhang H, Lin X, Chan M. A Dynamic Time Evolution Method for Concurrent Device-Circuit Aging Simulations Ieee Transactions On Electron Devices. 66: 184-190. DOI: 10.1109/Ted.2018.2882832  0.625
2019 Zhang L, Wang L, Wu W, Chan M. Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes Ieee Transactions On Electron Devices. 66: 139-145. DOI: 10.1109/Ted.2018.2843681  0.523
2019 Zhou S, Li K, Chen Y, Liao S, Zhang H, Chan M. Phase Change Memory Cell With Reconfigured Electrode for Lower RESET Voltage Ieee Journal of the Electron Devices Society. 7: 1072-1079. DOI: 10.1109/Jeds.2019.2948254  0.347
2019 Ma Z, Prawoto C, Ahmed Z, Xiao Y, Zhang L, Zhou C, Chan M. Control of hexagonal boron nitride dielectric thickness by single layer etching Journal of Materials Chemistry C. 7: 6273-6278. DOI: 10.1039/C9Tc00896A  0.472
2019 Kabir HD, Chan M. Polycrystalline transistor with multiple thresholds Microelectronics Journal. 83: 126-130. DOI: 10.1016/J.Mejo.2018.12.002  0.399
2018 Zhang X, Zhang L, Ahmed Z, Chan M. Origin of Nonideal Graphene-Silicon Schottky Junction Ieee Transactions On Electron Devices. 65: 1995-2002. DOI: 10.1109/Ted.2018.2812200  0.505
2018 Wu W, Chen J, Wang J, Zhou L, Tao H, Zou J, Xu M, Wang L, Peng J, Chan M. High-Resolution Flexible AMOLED Display Integrating Gate Driver by Metal–Oxide TFTs Ieee Electron Device Letters. 39: 1660-1663. DOI: 10.1109/Led.2018.2871045  0.403
2018 Zhang L, Song D, Xiao Y, Lin X, Chan M. On the Formulation of Self-Heating Models for Circuit Simulation Ieee Journal of the Electron Devices Society. 6: 291-297. DOI: 10.1109/Jeds.2018.2801301  0.585
2018 Kabir HMD, Ahmed Z, Kariyadan R, Zhang L, Chan M. Circular Electrodes to Reduce the Current Variation of OTFTS With the Drop-casted Semiconducting Layer Solid-State Electronics. 144: 49-53. DOI: 10.1016/J.Sse.2018.02.017  0.53
2017 Lin H, Chan WC, Lee WK, Chen Z, Chan M, Zhang M. High-Current Drivability Fibonacci Charge Pump With Connect–Point–Shift Enhancement Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 25: 2164-2173. DOI: 10.1109/Tvlsi.2017.2676822  0.342
2017 Wu J, Zhan F, Zhou L, Wu W, Xu M, Wang L, Yao R, Peng J, Chan M. A Low-Power Ring Oscillator Using Pull-Up Control Scheme Integrated by Metal–Oxide TFTs Ieee Transactions On Electron Devices. 64: 4946-4951. DOI: 10.1109/Ted.2017.2759226  0.319
2017 Kabir HMD, Ahmed Z, Zhang L, Chan M. Coil-Shaped Electrodes to Reduce the Current Variation of Drop-Casted OTFTs Ieee Electron Device Letters. 38: 645-648. DOI: 10.1109/Led.2017.2679201  0.528
2017 Sarfraz K, He J, Chan M. A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOS Ieee Journal of Solid-State Circuits. 52: 2215-2220. DOI: 10.1109/Jssc.2017.2707392  0.353
2017 Wang P, Chen Y, Li S, Raju S, Wang L, Zhang L, Lin X, Song Z, Chan M. Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode Ieee Journal of the Electron Devices Society. 5: 362-366. DOI: 10.1109/Jeds.2017.2734858  0.588
2017 Zhang L, Chan M. Artificial neural network design for compact modeling of generic transistors Journal of Computational Electronics. 16: 825-832. DOI: 10.1007/S10825-017-0984-9  0.542
2016 He J, Zhang X, Chan M, Wu W, Zhao W, Wang W, He P, Song L. A Physics Based Analytic Model for Gate All Around MOSFETs with SiO 2 -Core Si-Shell Architecture Journal of Computational and Theoretical Nanoscience. 13: 4866-4871. DOI: 10.1166/Jctn.2016.5358  0.339
2016 Xiao Y, Lin X, Lou H, Zhang B, Zhang L, Chan M. A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect Ieee Transactions On Electron Devices. 63: 4661-4667. DOI: 10.1109/Ted.2016.2620240  0.637
2016 Dong Y, Zhang L, Li X, Lin X, Chan M. A Compact Model for Double-Gate Heterojunction Tunnel FETs Ieee Transactions On Electron Devices. 63: 4506-4513. DOI: 10.1109/Ted.2016.2604001  0.665
2016 Ahmed Z, Zhang L, Sarfraz K, Chan M. Modeling CNTFET Performance Variation Due to Spatial Distribution of Carbon Nanotubes Ieee Transactions On Electron Devices. 63: 3776-3781. DOI: 10.1109/Ted.2016.2586961  0.484
2016 Lin X, Zhang B, Xiao Y, Lou H, Zhang L, Chan M. Analytical Current Model for Long-Channel Junctionless Double-Gate MOSFETs Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2520558  0.599
2016 Zhou S, Liu J, Deng Q, Xie C, Chan M. Effect of Near-Field Diffraction in Photolithography of Hexagonal Arrays for Dichroic Filters Ieee Photonics Journal. 8. DOI: 10.1109/Jphot.2016.2594032  0.302
2016 Lin H, Chan WC, Lee WK, Chen Z, Chan M, Zhang M. A High Conversion Ratio Component-Efficient Charge Pump for Display Drivers Journal of Display Technology. 12: 1057-1063. DOI: 10.1109/Jdt.2016.2578640  0.355
2016 Zhou C, Zhao Y, Raju S, Wang Y, Lin Z, Chan M, Chai Y. Carrier Type Control of WSe2 Field-Effect Transistors by Thickness Modulation and MoO3 Layer Doping Advanced Functional Materials. DOI: 10.1002/Adfm.201600292  0.341
2015 Guo J, Ng W, Yuan J, Li S, Chan M. A 200-Channel Area-Power-Efficient Chemical and Electrical Dual-Mode Acquisition IC for the Study of Neurodegenerative Diseases. Ieee Transactions On Biomedical Circuits and Systems. PMID 26529782 DOI: 10.1109/Tbcas.2015.2468052  0.352
2015 Hu Y, Wang H, Du C, Ma M, Chan M, He J, Wang G. A High-Voltage (>600 V) N-Island LDMOS With Step-Doped Drift Region in Partial SOI Technology Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2487345  0.379
2015 Ahmed Z, Zhang L, Chan M. Gate Capacitance Model for Aligned Carbon Nanotube FETs With Arbitrary CNT Spacing Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2484384  0.535
2015 Salahuddin SM, Chan M. Eight-FinFET fully differential SRAM cell with enhanced read and write voltage margins Ieee Transactions On Electron Devices. 62: 2014-2021. DOI: 10.1109/Ted.2015.2424376  0.329
2015 Li D, Zhang B, Lou H, Zhang L, Lin X, Chan M. Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics Ieee Journal of the Electron Devices Society. 3: 447-451. DOI: 10.1109/Jeds.2015.2475163  0.652
2015 Kabir HMD, Chan M. SRAM precharge system for reducing write power Hkie Transactions Hong Kong Institution of Engineers. 22: 1-8. DOI: 10.1080/1023697X.2014.970761  0.326
2014 Raju S, Wu R, Chan M, Yue CP. Modeling of Mutual Coupling Between Planar Inductors in Wireless Power Applications Ieee Transactions On Power Electronics. 29: 481-490. DOI: 10.1109/Tpel.2013.2253334  0.38
2014 Zhang A, Zhang L, Tang Z, Cheng X, Wang Y, Chen KJ, Chan M. Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components Ieee Transactions On Electron Devices. 61: 755-761. DOI: 10.1109/Ted.2014.2298255  0.576
2014 Huang JZ, Zhang L, Chew WC, Yam CY, Jiang LJ, Chen GH, Chan M. Model order reduction for quantum transport simulation of band-to-band tunneling devices Ieee Transactions On Electron Devices. 61: 561-568. DOI: 10.1109/Ted.2013.2295983  0.542
2014 Zhang L, Chan M. SPICE Modeling of Double-Gate Tunnel-FETs Including Channel Transports Ieee Transactions On Electron Devices. 61: 300-307. DOI: 10.1109/Ted.2013.2295237  0.555
2014 Wang L, Sun L, Han D, Wang Y, Chan M, Zhang S. A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits Ieee\/Osa Journal of Display Technology. 10: 317-320. DOI: 10.1109/Jdt.2014.2301554  0.329
2013 Lou H, Li D, Dong Y, Lin X, Yang S, He J, Chan M. Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors Japanese Journal of Applied Physics. 52: 104302. DOI: 10.7567/Jjap.52.104302  0.513
2013 He J, Leung WY, Man TY, He L, Liang H, Zhang A, He Q, Du C, He X, Chan M. Design and Verification of a High Performance LED Driver with an Efficient Current Sensing Architecture Circuits and Systems. 4: 393-400. DOI: 10.4236/Cs.2013.45052  0.354
2013 He J, Zhou Z, Yu C, He L, Ye Y, Chan M. Non-charge-sheet analytic model for ideal retrograde doping MOSFETs Journal of Computational and Theoretical Nanoscience. 10: 232-239. DOI: 10.1166/Jctn.2013.2684  0.327
2013 Zhang L, He J, Chen Q, Ma Y, Wang R, Ma Y, Zhao W, Chan M, Chen A. A Nonlinear Poisson-Schrodinger Solver Under Cylindrical Coordinate for Quantum Effect in Nanowire MOSFET Journal of Computational and Theoretical Nanoscience. 10: 73-77. DOI: 10.1166/Jctn.2013.2660  0.447
2013 Zhang L, Zahid F, Zhu Y, Liu L, Wang J, Guo H, Chan PCH, Chan M. First Principles simulations of nanoscale silicon devices with uniaxial strain Ieee Transactions On Electron Devices. 60: 3527-3533. DOI: 10.1109/Ted.2013.2275231  0.532
2013 Zhou C, Yang Y, Cai H, Ren T, Chan M, Yang CY. Temperature-Compensated High-Frequency Surface Acoustic Wave Device Ieee Electron Device Letters. 34: 1572-1574. DOI: 10.1109/Led.2013.2283305  0.303
2013 Lou H, Li D, Dong Y, Lin X, He J, Yang S, Chan M. Suppression of tunneling leakage current in junctionless nanowire transistors Semiconductor Science and Technology. 28: 125016. DOI: 10.1088/0268-1242/28/12/125016  0.56
2013 Zhang L, Mei J, Zhang X, Tao J, Hu Y, He J, Chan M. A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs Chinese Physics Letters. 30: 117102-117102. DOI: 10.1088/0256-307X/30/11/117102  0.521
2012 Zhang L, Wang S, Ma C, He J, Xu C, Ma Y, Ye Y, Liang H, Chen Q, Chan M. Gate underlap design for short channel effects control in cylindrical gate-all-around MOSFETs based on an analytical model Iete Technical Review. 29: 29-35. DOI: 10.4103/0256-4602.93125  0.583
2012 Shi M, Song Y, Zhang Z, Sun L, Wang Q, He J, Chan M. An Explicit Surface Potential Model of Bulk-MOSFETs with Inclusion of Poly-Gate Accumulation, Depletion and Inversion Effects Journal of Computational and Theoretical Nanoscience. 9: 963-968. DOI: 10.1166/Jctn.2012.2125  0.355
2012 Chen Y, He J, Liang HL, Ma Y, Chen Q, Su Y, He HY, Chan M, Cao J. Model-Based Prediction of the Plasma Oscillation Excitation Response Characteristics of a High-Electron Mobility Transistor-Based Terahertz Photomixer with the Cap Region Journal of Computational and Theoretical Nanoscience. 9: 549-554. DOI: 10.1166/Jctn.2012.2059  0.32
2012 Zhang L, Lin X, He J, Chan M. An Analytical Charge Model for Double-Gate Tunnel FETs Ieee Transactions On Electron Devices. 59: 3217-3223. DOI: 10.1109/Ted.2012.2217145  0.655
2012 He H, Zheng X, He J, Chan M. Polynomial-Effective-Channel-Mobility-Based Above-Threshold Current Model for Undoped Polycrystalline-Silicon Thin-Film Transistors Consistent With Pao–Sah Model Ieee Transactions On Electron Devices. 59: 3130-3132. DOI: 10.1109/Ted.2012.2212905  0.429
2012 Li S, Cai Y, Han D, Wang Y, Sun L, Chan M, Zhang S. Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target Ieee Transactions On Electron Devices. 59: 2555-2558. DOI: 10.1109/Ted.2012.2205151  0.35
2012 He J, Chan WT, Wang C, Lou H, Wang R, Li L, Liang H, Wu W, Ye Y, Ma Y, Chen Q, He X, Chan M. A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode Driver Ieee Transactions On Electron Devices. 59: 2539-2541. DOI: 10.1109/Ted.2012.2201941  0.337
2012 Zhou X, Liu F, Zhang L, Wang C, He J, Zhang X, Chan M. Unified Scale Length for Four-Terminal Double-Gate MOSFETs Ieee Transactions On Electron Devices. 59: 1997-1999. DOI: 10.1109/Ted.2012.2196520  0.576
2012 Lou H, Zhang L, Zhu Y, Lin X, Yang S, He J, Chan M. A Junctionless Nanowire Transistor With a Dual-Material Gate Ieee Transactions On Electron Devices. 59: 1829-1836. DOI: 10.1109/Ted.2012.2192499  0.639
2012 Li L, Chui CO, He J, Chan M. One-time-programmable memory in LTPS TFT technology with metal-induced lateral crystallization Ieee Transactions On Electron Devices. 59: 145-150. DOI: 10.1109/Ted.2011.2171039  0.306
2012 Li L, Zhang L, Lin X, He J, Chui CO, Chan M. Phase-change memory with multifin thin-film-transistor driver technology Ieee Electron Device Letters. 33: 405-407. DOI: 10.1109/Led.2011.2181480  0.611
2012 Guo J, Yuan J, Huang J, Law JKY, Yeung CK, Chan M. 32.9 nV/rt Hz -60.6 dB THD dual-band micro-electrode array signal acquisition IC Ieee Journal of Solid-State Circuits. 47: 1209-1220. DOI: 10.1109/Jssc.2012.2185590  0.335
2012 Zhang J, He J, Zhou X, Zhang L, Ma Y, Chen Q, Zhang X, Yang Z, Wang R, Han Y, Chan M. A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel Chinese Physics B. 21: 47303. DOI: 10.1088/1674-1056/21/4/047303  0.579
2011 Zhang L, Zhou X, Xu Y, Chen L, Zhou W, Wang W, He J, Chan M. A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation. Journal of Nanoscience and Nanotechnology. 11: 10480-4. PMID 22408930 DOI: 10.1166/Jnn.2011.3983  0.606
2011 Zhang X, He J, Zhang L, Zhang J, Ma Y, Wu W, Wang W, Wang R, Gu X, Chan M. A rigorous and concise surface potential-based core model for the undoped symmetric double-gate metal-oxide-semiconductor field effect transistors Journal of Computational and Theoretical Nanoscience. 8: 1857-1862. DOI: 10.1166/Jctn.2011.1893  0.531
2011 Shi M, He J, Liu Z, Wang W, Zhao W, Wang R, Wu W, Ma Y, Zhang D, Bian W, Chan M, Zhang X, Zhang L. 3-D Numerical Simulation Study on 20 nm NMOSFET Design Journal of Computational and Theoretical Nanoscience. 8: 1498-1501. DOI: 10.1166/Jctn.2011.1841  0.467
2011 He J, Shi M, Zhang L, Zhang J, Liu C, Zhuang H, Chan M. Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics Journal of Computational and Theoretical Nanoscience. 8: 1548-1551. DOI: 10.1166/Jctn.2011.1827  0.584
2011 Zhang L, Lou H, He J, Chan M. Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs Ieee Transactions On Electron Devices. 58: 3829-3836. DOI: 10.1109/Ted.2011.2165215  0.476
2011 Kwong KC, He J, Mok PKT, Chan M. Phase-change memory RESET model based on detailed cell cooling profile Ieee Transactions On Electron Devices. 58: 3635-3638. DOI: 10.1109/Ted.2011.2162843  0.701
2011 Li L, Lu K, Rajendran B, Happ TD, Lung H, Lam C, Chan M. Driving Device Comparison for Phase-Change Memory Ieee Transactions On Electron Devices. 58: 664-671. DOI: 10.1109/Ted.2010.2100082  0.379
2011 Zhang L, Li L, He J, Chan M. Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET by Effective Radius Ieee Electron Device Letters. 32: 1188-1190. DOI: 10.1109/Led.2011.2159358  0.57
2011 Shi M, He J, Zhang L, Ma C, Zhou X, Lou H, Zhuang H, Wang R, Li Y, Ma Y, Wu W, Wang W, Chan M. Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes Ieee Electron Device Letters. 32: 955-957. DOI: 10.1109/Led.2011.2147754  0.534
2011 Guo J, Yuan J, Huang J, Law J, Yeung CK, Chan M. Highly accurate dual-band cellular field potential acquisition for brain-machine interface Ieee Journal On Emerging and Selected Topics in Circuits and Systems. 1: 461-468. DOI: 10.1109/Jetcas.2011.2174471  0.316
2010 Leung WY, Man TY, Zhang D, He J, Chan M. A high power switch-mode LED driver with an efficient current sensing scheme Journal of Low Power Electronics. 6: 133-140. DOI: 10.1166/Jolpe.2010.1063  0.337
2010 Zhang J, Zhang L, He J, Chan M. A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 107: 54507. DOI: 10.1063/1.3319656  0.596
2010 Zhang L, Ma C, He J, Lin X, Chan M. Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET Solid-State Electronics. 54: 806-808. DOI: 10.1016/J.Sse.2010.03.020  0.572
2010 Wang Y, Yan Z, Zhu J, Zhang L, Lin X, He J, Cao J, Chan M. A generic numerical model for detection of terahertz radiation in MOS field-effect transistors Solid-State Electronics. 54: 791-795. DOI: 10.1016/J.Sse.2010.03.009  0.542
2010 Samanta P, Zhu C, Chan M. Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks Microelectronics Reliability. 50: 1907-1914. DOI: 10.1016/J.Microrel.2010.07.005  0.376
2010 Zhang L, Zhang J, Song Y, Lin X, He J, Chan M. Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect Microelectronics Reliability. 50: 1062-1070. DOI: 10.1016/J.Microrel.2010.04.005  0.659
2010 He J, Xing Z, Wang Y, Xi X, Chan M, Hu C. Retraction notice: Retraction notice to “Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs” [Microelectron. J. 33 (2002) 667-670] Microelectronics Journal. 41: 693. DOI: 10.1016/J.Mejo.2010.09.001  0.303
2010 Zhang L, Ma C, He J, Lin X, Chan M. Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET Journal of End-to-End-Testing. DOI: 10.1016/J.Endend.2010.06.030  0.536
2009 Chen Y, He J, Wang Y, Lin X, Zhang L, Chan M. Terahertz Wave Generation and Detection Analysis of Silicon Nanowire MOS Field-Effect Transistor Iete Technical Review. 26: 430-439. DOI: 10.4103/0256-4602.57828  0.494
2009 Ng RMY, Wang T, Liu F, Zuo X, He J, Chan M. Vertically Stacked Silicon Nanowire Transistors Fabricated by Inductive Plasma Etching and Stress-Limited Oxidation Ieee Electron Device Letters. 30: 520-522. DOI: 10.1109/Led.2009.2014975  0.352
2009 Liu F, Zhang L, Zhang J, He J, Chan M. Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions Semiconductor Science and Technology. 24: 85005. DOI: 10.1088/0268-1242/24/8/085005  0.564
2009 He J, Zhang L, Zhang J, Ma C, Liu F, Chan M. A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs Molecular Simulation. 35: 483-490. DOI: 10.1080/08927020802706995  0.566
2009 He J, Zhang L, Zheng R, Zhang J, Chan M. A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs Molecular Simulation. 35: 448-455. DOI: 10.1080/08927020802609454  0.547
2009 Samanta P, Cheng CL, Lee YJ, Chan M. Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/ SiO2 and HfO2 / SiO2 gate dielectric stacks Journal of Applied Physics. 105. DOI: 10.1063/1.3148297  0.391
2009 Liu F, Zhang J, He F, Liu F, Zhang L, Chan M. A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs Solid-State Electronics. 53: 49-53. DOI: 10.1016/J.Sse.2008.09.016  0.556
2009 Bian W, He J, Zhang L, Zhang J, Chan M. Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs Microelectronics Reliability. 49: 897-903. DOI: 10.1016/J.Microrel.2009.05.008  0.573
2009 Samanta P, Cheng CL, Lee YJ, Chan M. Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack Microelectronic Engineering. 86: 1767-1770. DOI: 10.1016/J.Mee.2009.03.002  0.353
2008 Liu F, He J, Zhang L, Zhang J, Hu J, Ma C, Chan M. A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body Ieee Transactions On Electron Devices. 55: 2187-2194. DOI: 10.1109/Ted.2008.926735  0.572
2008 Liu F, He J, Zhang J, Chen Y, Chan M. A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes Ieee Transactions On Electron Devices. 55: 3494-3502. DOI: 10.1109/Ted.2008.2006544  0.423
2008 Yang J, He J, Liu F, Zhang L, Liu F, Zhang X, Chan M. A Compact Model of Silicon-Based Nanowire MOSFETs for Circuit Simulation and Design Ieee Transactions On Electron Devices. 55: 2898-2906. DOI: 10.1109/Ted.2008.2005184  0.613
2008 Liu F, He J, Fu Y, Hu J, Bian W, Song Y, Zhang X, Chan M. Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric, Asymmetric, and Independent-Gate-Operation Modes Ieee Transactions On Electron Devices. 55: 816-826. DOI: 10.1109/Ted.2007.914836  0.427
2008 Man TY, Leung KN, Leung CY, Mok PKT, Chan M. Development of single-transistor-control LDO based on flipped voltage follower for SoC Ieee Transactions On Circuits and Systems I: Regular Papers. 55: 1392-1401. DOI: 10.1109/Tcsi.2008.916568  0.369
2008 Man TY, Mok PKT, Chan MJ. A 0.9-V input discontinuous-conduction-mode boost converter with CMOS-control rectifier Ieee Journal of Solid-State Circuits. 43: 2036-2046. DOI: 10.1109/Jssc.2008.2001933  0.348
2008 Ma C, Li B, Wei Y, Zhang L, He J, Zhang X, Lin X, Chan M. FinFET reliability study by forward gated-diode generation–recombination current Semiconductor Science and Technology. 23: 75008. DOI: 10.1088/0268-1242/23/7/075008  0.626
2008 He J, Bian W, Chen Y, Wei Y, Zhang L, Zhang J, Chan M. A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs Molecular Simulation. 34: 63-72. DOI: 10.1080/08927020701730393  0.604
2008 Gong J, Chan PCH, Chan M. An explicit surface-potential-based model for undoped double-gate MOSFETs Solid-State Electronics. 52: 282-288. DOI: 10.1016/J.Sse.2007.08.013  0.375
2008 Wu D, Huang R, Bu W, Zhou F, Tian Y, Chen B, Feng C, Chan M, Wang Y. A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium Microelectronic Engineering. 85: 1490-1494. DOI: 10.1016/J.Mee.2008.01.079  0.396
2007 Tian Y, Xiao H, Huang R, Feng C, Chan M, Chen B, Wang R, Zhang X, Wang Y. Quasi-SOI MOSFETs—A Promising Bulk Device Candidate for Extremely Scaled Era Ieee Transactions On Electron Devices. 54: 1784-1788. DOI: 10.1109/Ted.2007.899401  0.4
2007 He J, Liu F, Zhang J, Feng J, Hu J, Yang S, Chan M. A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs Ieee Transactions On Electron Devices. 54: 1203-1209. DOI: 10.1109/Ted.2007.893812  0.463
2007 Wu W, Chan M. Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate FinFETs Ieee Transactions On Electron Devices. 54: 692-698. DOI: 10.1109/Ted.2007.891252  0.388
2007 He J, Bian W, Tao Y, Liu F, Song Y, Hu J, Zhang X, Wu W, Wang T, Chan M. Linear Cofactor Difference Extrema of MOSFET's Drain–Current and Application to Parameter Extraction Ieee Transactions On Electron Devices. 54: 874-878. DOI: 10.1109/Ted.2007.891249  0.384
2007 Man TY, Mok PKT, Chan M. A high slew-rate push-pull output amplifier for low-quiescent current low-dropout regulators with transient-response improvement Ieee Transactions On Circuits and Systems Ii: Express Briefs. 54: 755-759. DOI: 10.1109/Tcsii.2007.900347  0.34
2007 He J, Zhang L, Zhang J, Fu Y, Zheng R, Chan M. A unified carrier-based model for undoped symmetric double-gate and surrounding-gate MOSFETs Semiconductor Science and Technology. 22: 1312-1316. DOI: 10.1088/0268-1242/22/12/013  0.578
2007 He J, Bian W, Tao Y, Liu F, Lu K, Wu W, Wang T, Chan M. Corrigendum to “An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration” [Solid-State Electron. 51 (2007) 179–185] Solid-State Electronics. 51: 816. DOI: 10.1016/J.Sse.2007.03.003  0.342
2007 He J, Xi X, Wan H, Dunga M, Chan M, Niknejad AM. BSIM5: An advanced charge-based MOSFET model for nanoscale VLSI circuit simulation Solid-State Electronics. 51: 433-444. DOI: 10.1016/J.Sse.2006.12.006  0.44
2007 He J, Bian W, Tao Y, Liu F, Lu K, Wu W, Wang T, Chan M. An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration Solid-State Electronics. 51: 179-185. DOI: 10.1016/J.Sse.2006.11.010  0.353
2007 Samanta P, Zhu C, Chan M. Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack Microelectronic Engineering. 84: 1964-1967. DOI: 10.1016/J.Mee.2007.04.084  0.358
2006 He J, Chan M, Zhang X, Wang Y. Erratum for "A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region" Ieee Transactions On Electron Devices. 53: 2008-2016. DOI: 10.1109/Ted.2006.890468  0.322
2006 He J, Chan M, Zhang X, Wang Y. An Analytic Model to Account for Quantum–Mechanical Effects of MOSFETs Using a Parabolic Potential Well Approximation Ieee Transactions On Electron Devices. 53: 2082-2090. DOI: 10.1109/Ted.2006.880359  0.308
2006 Lin X, Zhang S, Wu X, Chan M. Local clustering 3-D stacked CMOS technology for interconnect loading reduction Ieee Transactions On Electron Devices. 53: 1405-1410. DOI: 10.1109/Ted.2006.873847  0.3
2006 Wu W, Lam S, Chan M. A wide-band T/R switch using enhanced compact Waffle MOSFETs Ieee Microwave and Wireless Components Letters. 16: 287-289. DOI: 10.1109/Lmwc.2006.873495  0.338
2006 Wu W, Chan M. Gate resistance modeling of multifin MOS devices Ieee Electron Device Letters. 27: 68-70. DOI: 10.1109/Led.2005.861599  0.364
2006 Samanta P, Man TY, Chan ACK, Zhang Q, Zhu C, Chan M. Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics Semiconductor Science and Technology. 21: 1393-1401. DOI: 10.1088/0268-1242/21/10/004  0.367
2006 Samanta P, Man TY, Zhang Q, Zhu C, Chan M. Direct tunneling stress-induced leakage current in ultrathin HfO 2SiO2 gate dielectric stacks Journal of Applied Physics. 100. DOI: 10.1063/1.2372313  0.331
2006 Sen B, Wong H, Filip V, Choi HY, Sarkar CK, Chan M, Kok CW, Poon MC. Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure Thin Solid Films. 504: 312-316. DOI: 10.1016/J.Tsf.2005.09.052  0.358
2006 Choi HY, Wong H, Filip V, Sen B, Kok CW, Chan M, Poon MC. Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride Thin Solid Films. 504: 7-10. DOI: 10.1016/J.Tsf.2005.09.018  0.333
2006 He J, Chan M, Zhang X, Wang Y. A new analytic method to design multiple floating field limiting rings of power devices Solid-State Electronics. 50: 1375-1381. DOI: 10.1016/J.Sse.2006.06.012  0.339
2006 He J, Zhang X, Zhang G, Chan M, Wang Y. A carrier-based analytic DCIV model for long channel undoped cylindrical surrounding-gate MOSFETs Solid-State Electronics. 50: 416-421. DOI: 10.1016/J.Sse.2006.01.015  0.458
2006 Sen B, Sarkar CK, Wong H, Chan M, Kok CW. Electrical characteristics of high-κ dielectric film grown by direct sputtering method Solid-State Electronics. 50: 237-240. DOI: 10.1016/J.Sse.2005.11.010  0.332
2005 Lin X, Chan M. A highly scalable opposite side floating-gate flash memory cell Ieee Transactions On Electron Devices. 52: 2042-2045. DOI: 10.1109/Ted.2005.855061  0.359
2005 Wu X, Chan PCH, Zhang S, Feng C, Chan M. A three-dimensional stacked fin-CMOS technology for high-density ULSI circuits Ieee Transactions On Electron Devices. 52: 1998-2003. DOI: 10.1109/Ted.2005.854267  0.375
2005 Chan ACK, Cheng CF, Chan M. Effects of dopants on the electrical behavior of grain boundary in metal-induced crystallized polysilicon film Ieee Transactions On Electron Devices. 52: 1917-1919. DOI: 10.1109/Ted.2005.852735  0.353
2005 Xu C, Shen C, Wu W, Chan M. Backside-illuminated lateral PIN photodiode for CMOS image sensor on SOS substrate Ieee Transactions On Electron Devices. 52: 1110-1115. DOI: 10.1109/Ted.2005.848106  0.312
2005 Wu X, Chan PCH, Chan M. Impacts of nonrectangular fin cross section on the electrical characteristics of FinFET Ieee Transactions On Electron Devices. 52: 63-68. DOI: 10.1109/Ted.2004.841334  0.364
2005 Leung CY, Mok PKT, Leung KN, Chan M. An integrated CMOS current-sensing circuit for low-Voltage current-mode buck regulator Ieee Transactions On Circuits and Systems Ii-Express Briefs. 52: 394-397. DOI: 10.1109/Tcsii.2005.850403  0.361
2005 Wu X, Chan PCH, Zhang S, Feng C, Chan M. Stacked 3-D Fin-CMOS technology Ieee Electron Device Letters. 26: 416-418. DOI: 10.1109/Led.2005.848070  0.335
2005 Yin C, Chan PCH, Chan M. An air spacer technology for improving short-channel immunity of MOSFETs with raised source/drain and high-/spl kappa/ gate dielectric Ieee Electron Device Letters. 26: 323-325. DOI: 10.1109/Led.2005.846584  0.384
2005 Lee W, Ng AFL, Tang JJ, Chan M. Compact modeling of transient substrate current of MOSFET Solid-State Electronics. 49: 1405-1409. DOI: 10.1016/J.Sse.2005.06.009  0.374
2005 Man TY, Chan M. A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites Microelectronics Reliability. 45: 349-354. DOI: 10.1016/J.Microrel.2004.08.016  0.333
2004 Lam S, Lee W, Chan AC-, Mok PKT, Ko PK, Chan M. A Workable Use of the Floating-Body Silicon-On-Sapphire MOSFET as a Transconductance Mixer Japanese Journal of Applied Physics. 43: 2176-2179. DOI: 10.1143/Jjap.43.2176  0.377
2004 Chan ACK, Man TY, He J, Yuen KH, Lee WK, Chan M. SOI flash memory scaling limit and design consideration based on 2-D analytical modeling Ieee Transactions On Electron Devices. 51: 2054-2060. DOI: 10.1109/Ted.2004.838327  0.421
2004 Cheng CF, Jagar S, Poon MC, Kok CW, Chan M. A statistical model to predict the performance variation of polysilicon TFTs formed by grain-enhancement technology Ieee Transactions On Electron Devices. 51: 2061-2068. DOI: 10.1109/Ted.2004.838325  0.357
2004 Cheng CF, Leung TC, Poon MC, Kok CW, Chan M. Modeling of large-grain polysilicon formation under retardation effect of SPC Ieee Transactions On Electron Devices. 51: 2205-2210. DOI: 10.1109/Ted.2004.838323  0.325
2004 Zhang Z, Zhang S, Feng C, Chan M. Analysis and optimization of SDOI structure to maximize the intrinsic performance of extremely scaled MOSFETs Ieee Transactions On Electron Devices. 51: 1095-1100. DOI: 10.1109/Ted.2004.829515  0.515
2004 Zhang Z, Zhang S, Chan M. Self-align recessed source drain ultrathin body SOI MOSFET Ieee Electron Device Letters. 25: 740-742. DOI: 10.1109/Led.2004.837582  0.503
2004 Zhang S, Han R, Lin X, Wu X, Chan M. A stacked CMOS technology on SOI substrate Ieee Electron Device Letters. 25: 661-663. DOI: 10.1109/Led.2004.834735  0.562
2003 Zhang S, Lin X, Huang R, Han R, Chan M. A self-aligned, electrically separable double-gate MOS transistor technology for dynamic threshold voltage application Ieee Transactions On Electron Devices. 50: 2297-2300. DOI: 10.1109/Ted.2003.818598  0.583
2003 Li J, Xue M, Lu Z, Zhang Z, Feng C, Chan M. A high-density conduction-based micro-DNA identification array fabricated with a CMOS compatible process Ieee Transactions On Electron Devices. 50: 2165-2170. DOI: 10.1109/Ted.2003.816545  0.478
2003 Zhang S, Chan ACK, Han R, Huang R, Liu X, Wang Y, Ko PK, Chan M. A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM Ieee Transactions On Electron Devices. 50: 1952-1960. DOI: 10.1109/Ted.2003.815859  0.444
2003 Cheng CF, Poon VMC, Kok CW, Chan M. Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization Ieee Transactions On Electron Devices. 50: 1467-1474. DOI: 10.1109/Ted.2003.813521  0.306
2003 Jagar S, Cheng CF, Zhang S, Wang H, Poon MC, Kok CW, Chan M. A SPICE model for thin-film transistors fabricated on grain-enhanced polysilicon film Ieee Transactions On Electron Devices. 50: 1103-1108. DOI: 10.1109/Ted.2003.812487  0.388
2003 Yuen KH, Man TY, Chan ACK, Chan M. A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structure Ieee Electron Device Letters. 24: 518-520. DOI: 10.1109/Led.2003.815157  0.376
2003 Lam S, Wan H, Su P, Wyatt PW, Chen CL, Niknejad AM, Hu C, Ko PK, Chan M. RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology Ieee Electron Device Letters. 24: 251-253. DOI: 10.1109/Led.2003.810892  0.332
2003 Chan AC-, Chan M. Effects of floating body on double polysilicon partially depleted SOI nonvolatile memory cell Ieee Electron Device Letters. 24: 75-77. DOI: 10.1109/Led.2003.808840  0.392
2003 Su P, Fung SKH, Wyatt PW, Wan H, Niknejad AM, Chan M, Hu C. On the body-source built-in potential lowering of SOI MOSFETs Ieee Electron Device Letters. 24: 90-92. DOI: 10.1109/Led.2002.807696  0.346
2003 Ying T, Ki WH, Chan M. Area-Efficient CMOS Charge Pumps for LCD Drivers Ieee Journal of Solid-State Circuits. 38: 1721-1725. DOI: 10.1109/Jssc.2003.817596  0.353
2003 Cheung VS-, Luong HC, Chan M, Ki W. A 1-V 3.5-mW CMOS switched-opamp quadrature IF circuitry for Bluetooth receivers Ieee Journal of Solid-State Circuits. 38: 805-816. DOI: 10.1109/Jssc.2003.810031  0.313
2002 Ng KL, Zhan N, Poon MC, Kok CW, Chan M, Wong H. High Quality HfO 2 Film and Its Applications in Novel Poly-Si Devices Mrs Proceedings. 716: 91. DOI: 10.1557/Proc-716-B2.6  0.303
2002 Zhang S, Han R, Sin JKO, Chan M. Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD Ieee Transactions On Electron Devices. 49: 1490-1492. DOI: 10.1109/Ted.2002.801232  0.383
2002 He J, Xi X, Chan M, Hu C, Li Y, Zhang X, Huang R, Wang Y. Equivalent junction method to predict 3-D effect of curved-abrupt p-n junctions Ieee Transactions On Electron Devices. 49: 1322-1325. DOI: 10.1109/Ted.2002.1013296  0.39
2002 Zhang S, Han R, Zhang Z, Huang R, Ko PK, Chan M. Implementation of fully self-aligned bottom-gate MOS transistor Ieee Electron Device Letters. 23: 618-620. DOI: 10.1109/Led.2002.803763  0.526
2002 He J, Xi X, Chan M, Cao K, Hu C, Li Y, Zhang X, Huang R, Wang Y. Normalized mutual integral difference method to extract threshold voltage of MOSFETs Ieee Electron Device Letters. 23: 428-430. DOI: 10.1109/Led.2002.1015230  0.345
2002 Xu C, Ki W, Chan M. A low-voltage CMOS complementary active pixel sensor (CAPS) fabricated using a 0.25 μm CMOS technology Ieee Electron Device Letters. 23: 398-400. DOI: 10.1109/Led.2002.1015213  0.332
2002 Xu C, Zhang W, Ki W, Chan M. A 1.0-V V/sub DD/ CMOS active-pixel sensor with complementary pixel architecture and pulsewidth modulation fabricated with a 0.25-/spl mu/m CMOS process Ieee Journal of Solid-State Circuits. 37: 1853-1859. DOI: 10.1109/Jssc.2002.804346  0.571
2002 Ng AF-, Ko PK, Chan M. Determining the onset frequency of nonquasistatic effects of the MOSFET in AC simulation Ieee Electron Device Letters. 23: 37-39. DOI: 10.1109/55.974805  0.319
2002 He J, Wang Y, Zhang X, Xi X, Chan M, Huang R, Hu C. A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices Ieee Transactions On Electron Devices. 49: 933-937. DOI: 10.1109/16.998606  0.332
2002 Jagar S, Wang H, Chan M. Design methodology of the high performance large-grain polysilicon MOSFET Ieee Transactions On Electron Devices. 49: 795-801. DOI: 10.1109/16.998586  0.31
2002 Zhang S, Han R, Sin JKO, Chan M. Implementation and characterization of self-aligned double-gate TFT with thin channel and thick source/drain Ieee Transactions On Electron Devices. 49: 718-724. DOI: 10.1109/16.998576  0.436
2001 Lin X, Feng C, Zhang S, Ho W, Chan M. A Simple Method to Fabricate Double-Gate SOI MOSFET with Diffusion Layer on Bulk Silicon Wafer as the Bottom Gate The Japan Society of Applied Physics. 2001: 252-253. DOI: 10.7567/Ssdm.2001.C-4-4  0.352
2001 Shivani S, Ng KL, Cheng CF, Poon MC, Chan M. Effects of process conditions on the performance of large grain poly-silicon on insulator (LPSOI) MOSFET for advanced CMOS applications Mrs Proceedings. 686: 127. DOI: 10.1557/Proc-686-A4.3  0.332
2001 Zhang S, Han R, Sin JKO, Chan M. A novel self-aligned double-gate TFT technology Ieee Electron Device Letters. 22: 530-532. DOI: 10.1109/55.962653  0.426
2001 Ng AF-, Lee W, Ko PK, Chan M. MOSFET drain/source charge partition under nonquasi-static switching Ieee Electron Device Letters. 22: 484-486. DOI: 10.1109/55.954919  0.415
2001 Zhang S, Han R, Chan MJ. A novel self-aligned bottom gate poly-Si TFT with in-situ LDD Ieee Electron Device Letters. 22: 393-395. DOI: 10.1109/55.936354  0.42
2001 Chan ACK, Wang H, Chan MJ. High quality thermal oxide on LPSOI formed by high temperature enhanced MILC Ieee Electron Device Letters. 22: 384-386. DOI: 10.1109/55.936351  0.351
2001 Xu C, Zhang W, Chan M. A low voltage hybrid bulk/SOI CMOS active pixel image sensor Ieee Electron Device Letters. 22: 248-250. DOI: 10.1109/55.919244  0.597
2001 Jagar S, Wang H, Chan M. Effects of longitudinal and latitudinal grain boundaries on the performance of large-grain polysilicon MOSFET Ieee Electron Device Letters. 22: 218-220. DOI: 10.1109/55.919234  0.375
2001 Chan VWC, Chan PCH, Chan M. Multiple layers of CMOS integrated circuits using recrystallized silicon film Ieee Electron Device Letters. 22: 77-79. DOI: 10.1109/55.902837  0.415
2001 Wang H, Singh J, Lam S, Chan M. High frequency performance of large-grain polysilicon-on-insulator MOSFETs Ieee Transactions On Electron Devices. 48: 1480-1482. DOI: 10.1109/16.930672  0.329
2001 Chan VWC, Chan PCH, Chan M. Three-dimensional CMOS SOI integrated circuit using high-temperature metal-induced lateral crystallization Ieee Transactions On Electron Devices. 48: 1394-1399. DOI: 10.1109/16.930657  0.412
2001 Zhang W, Chan M. A high gain n-well/gate tied PMOSFET image sensor fabricated from a standard CMOS process Ieee Transactions On Electron Devices. 48: 1097-1102. DOI: 10.1109/16.925233  0.597
2001 Chan M, Ko PK. Development of a viable 3D integrated circuit technology Science in China Series F: Information Sciences. 44: 241-248. DOI: 10.1007/Bf02714712  0.332
2000 Shivani S, Poon MC, Chan M, Ko PK. Effect of Ramp Annealing to Ni Induced Lateral Crystallization of Amorphous Silicon Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A9.7  0.32
2000 Chan WY, Myasnikov AM, Poon MC, Yuen CY, Han PG, Chan M, Ko PK. Effect Of Nickel In Large Grain Poly-Si Film Formed By Nickel Induced Lateral Crystallization and New Grain Enhancement Method Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A31.6  0.32
2000 Wang H, Chan M, Jagar S, Wang Y, Ko PK. Submicron super TFTs for 3-D VLSI applications Ieee Electron Device Letters. 21: 439-441. DOI: 10.1109/55.863104  0.369
2000 Wang H, Chan M, Jagar S, Poon VMC, Qin M, Wang Y, Ko PK. Super thin-film transistor with SOI CMOS performance formed by a novel grain enhancement method Ieee Transactions On Electron Devices. 47: 1580-1586. DOI: 10.1109/16.853034  0.387
2000 Zhang W, Chan M, Ko PK. Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate Ieee Transactions On Electron Devices. 47: 1375-1384. DOI: 10.1109/16.848280  0.615
2000 Wang H, Chan M, Wang Y, Ko PK. The behavior of narrow-width SOI MOSFETs with MESA isolation Ieee Transactions On Electron Devices. 47: 593-600. DOI: 10.1109/16.824735  0.426
2000 Zhang W, Chan M, Huang R, Ko PK. High gain gate/body tied NMOSFET photo-detector on SOI substrate for low power applications Solid-State Electronics. 44: 535-540. DOI: 10.1016/S0038-1101(99)00260-9  0.609
1999 Banna SR, Chan PCH, Chan M, Fung SKH, Ko PK. Fully depleted CMOS/SOI device design guidelines for low-power applications Ieee Transactions On Electron Devices. 46: 754-761. DOI: 10.1109/16.753710  0.378
1998 Zhang W, Chan M, Fung SKH, Ko PK. Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate Ieee Electron Device Letters. 19: 435-437. DOI: 10.1109/55.728904  0.605
1998 Jin W, Chan CH, Chan M. On the power dissipation in dynamic threshold silicon-on-insulator CMOS inverter Ieee Transactions On Electron Devices. 45: 1717-1724. DOI: 10.1109/16.704370  0.352
1998 Fung SKH, Chan M, Ko PK. Impact of scaling silicon film thickness and channel width on SOI MOSFET with reoxidized MESA isolation Ieee Transactions On Electron Devices. 45: 1105-1110. DOI: 10.1109/16.669545  0.382
1998 Chan M, Hui KY, Hu C, Ko PK. A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation Ieee Transactions On Electron Devices. 45: 834-841. DOI: 10.1109/16.662788  0.404
1998 Banna SR, Chan CH, Chan M, Fung SKH, Ko PK. A unified understanding on fully-depleted SOI NMOSFET hot-carrier degradation Ieee Transactions On Electron Devices. 45: 206-212. DOI: 10.1109/16.658832  0.389
1998 Poon M, Chan M, Zhang W, Deng F, Lau S. Stability of NiSi in boron-doped polysilicon lines Microelectronics Reliability. 38: 1499-1502. DOI: 10.1016/S0026-2714(98)00046-8  0.31
1997 Sinitsky D, Tu R, Liang C, Chan M, Bokor J, Hu C. AC output conductance of SOI MOSFETs and impact on analog applications Ieee Electron Device Letters. 18: 36-38. DOI: 10.1109/55.553036  0.347
1997 Cheng Y, Jeng M, Liu Z, Huang J, Chan M, Chen K, Ko PK, Hu C. A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation Ieee Transactions On Electron Devices. 44: 277-287. DOI: 10.1109/16.557715  0.458
1997 Fung SKH, Chan M, Ko PK. Inverse-narrow-width effect of deep sub-micrometer MOSFETs with LOCOS isolation Solid-State Electronics. 41: 1885-1889. DOI: 10.1016/S0038-1101(97)00166-4  0.418
1996 Banna SR, Chan PCH, Chan M, Ko PK. A physically based compact device model for fully depleted and nearly fully depleted SOI MOSFET Ieee Transactions On Electron Devices. 43: 1914-1923. DOI: 10.1109/16.543027  0.41
1995 Chan M, King JC, Ko PK, Hu C. SOI/bulk hybrid technology on SIMOX wafers for high performance circuits with good ESD immunity Ieee Electron Device Letters. 16: 11-13. DOI: 10.1109/55.363215  0.374
1995 Chan M, Yu B, Ma Z, Nguyen CT, Hu C, Ko PK. Comparative study of fully depleted and body-grounded non fully depleted SOI MOSFETs for high performance analog and mixed signal circuits Ieee Transactions On Electron Devices. 42: 1975-1981. DOI: 10.1109/16.469406  0.395
1995 Banna SR, Chan PCH, Ko PK, Nguyen CT, Chan M. Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET's Ieee Transactions On Electron Devices. 42: 1949-1955. DOI: 10.1109/16.469402  0.413
1995 Chan M, Yuen SS, Ma Z, Hui KY, Ko PK, Hu C. ESD reliability and protection schemes in SOI CMOS output buffers Ieee Transactions On Electron Devices. 42: 1816-1821. DOI: 10.1109/16.464414  0.38
1994 Chan M, Assaderaghi F, Hu C, Ko PK, Parke SA. Recessed-Channel Structure for Fabricating Ultrathin SOI MOSFET with Low Series Resistance Ieee Electron Device Letters. 15: 22-24. DOI: 10.1109/55.289474  0.375
1994 Ma ZJ, Wann HJ, Chan M, King JC, Cheng YC, Ko PK, Hu C. Hot-carrier effects in thin-film fully depleted SOI MOSFET's Ieee Electron Device Letters. 15: 218-220. DOI: 10.1109/55.286697  0.356
Low-probability matches (unlikely to be authored by this person)
2005 Wu W, Lam S, Chan M. Effects of layout methods of RFCMOS on noise performance Ieee Transactions On Electron Devices. 52: 2753-2759. DOI: 10.1109/Ted.2005.859694  0.3
2002 Cheng CF, Poon MC, Kok CW, Chan M. Modeling of Metal-Induced-Lateral-Crystallization Mechanism in High Performance Low Temperature Thin-Film-Transistor Application The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.Lp2-1  0.299
2007 Samanta P, Zhu C, Chan M. On the electrical stress-induced oxide-trapped charges in thin Hf O2 Si O2 gate dielectric stack Applied Physics Letters. 91. DOI: 10.1063/1.2783967  0.295
2008 Liu F, He J, Zhang J, Chan MJ. A global continuous channel potential solution for double-gate MOSFETs 2008 Ieee International Conference On Electron Devices and Solid-State Circuits, Edssc. DOI: 10.1109/EDSSC.2008.4760671  0.294
2013 Wu R, Raju S, Chan M, Sin JKO, Yue CP. Silicon-embedded receiving coil for high-efficiency wireless power transfer to implantable biomedical ics Ieee Electron Device Letters. 34: 9-11. DOI: 10.1109/Led.2012.2225135  0.293
2000 Poon MC, Deng F, Chan M, Chan WY, Lau SS. Resistivity and thermal stability of nickel mono-silicide Applied Surface Science. 157: 29-34. DOI: 10.1016/S0169-4332(99)00513-9  0.293
2004 Zhang S, Lin X, Han R, Wu X, Chan M. A Vertical SOI CMOS Technology with p-MOS on Si Film and n-MOS on Bulk Base The Japan Society of Applied Physics. 2004: 770-771. DOI: 10.7567/Ssdm.2004.B-10-4  0.292
2019 Prawoto C, Ma Z, Xiao Y, Raju S, Zhou C, Chan M. Interconnect Technology With h-BN-Capped Air-Gaps Ieee Electron Device Letters. 40: 1876-1879. DOI: 10.1109/Led.2019.2944418  0.288
1999 Yuen CY, Poon MC, Chan M, Qin M, Chan WY, Shivani S, Ko PK. SOI Formation from Amorphous Silicon by Novel Gain Enhancement Method Mrs Proceedings. 587. DOI: 10.1557/Proc-587-O8.2  0.287
2010 Bartic C, Chan M, Fromherz P, Judy JW, Kan EC, Leburton JP, Li J, Misra V, Reed MA, Timp GL. Introduction to the special section on electronic and ionic interfaces to biomolecules and cells Ieee Transactions On Nanotechnology. 9: 268. DOI: 10.1109/Tnano.2010.2049699  0.286
2002 Chan ACK, Chan M. Transient Behavior of Partially Depleted SOI Non-Volatile Memory Cell and Its Impacts on Device Scaling The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.Lp10-2  0.286
2002 Cheng CF, Cheung WM, Ng KL, Chan PJ, Poon MC, Chan M, Kok CW. High Precision Physical Model for Nickel MILC Mrs Proceedings. 715: 223. DOI: 10.1557/Proc-715-A22.8  0.286
2012 Guo J, Yuan J, Chan M. Modeling of the cell-electrode interface noise for microelectrode arrays. Ieee Transactions On Biomedical Circuits and Systems. 6: 605-13. PMID 23853261 DOI: 10.1109/Tbcas.2012.2189569  0.285
2002 Tsui K, Chen KJ, Lam S, Chan M. RF Power Characteristics of Thin Film Silicon-on-Sapphire MOSFET The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2002.P9-7  0.285
2017 Li X, Leung CW, Chiu C-, Lin K-, Chan M, Zhou Y, Pong PWT. Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography Physics Letters A. 381: 2709-2714. DOI: 10.1016/J.Physleta.2017.06.010  0.285
2012 Law JK, Yeung CK, Li L, Rudd JA, Ingebrandt S, Chan M. The use of SU-8 topographically guided microelectrode array in measuring extracellular field potential propagation. Annals of Biomedical Engineering. 40: 619-27. PMID 22002836 DOI: 10.1007/S10439-011-0432-0  0.282
2009 Law JK, Yeung CK, Hofmann B, Ingebrandt S, Rudd JA, Offenhäusser A, Chan M. The use of microelectrode array (MEA) to study the protective effects of potassium channel openers on metabolically compromised HL-1 cardiomyocytes. Physiological Measurement. 30: 155-67. PMID 19136734 DOI: 10.1088/0967-3334/30/2/004  0.278
2020 Cheng W, Zeng F, He M, Wang Q, Chan M, Yu H. Quasi-Normally-Off AlGaN/GaN HEMTs with SiNx Stress Liner and Comb Gate for Power Electronics Applications Ieee Journal of the Electron Devices Society. 1-1. DOI: 10.1109/Jeds.2020.3020186  0.276
2004 Cheng CF, Poon MC, Kok CW, Chan M. Statistical Modeling of Grain-Enhanced Polysilicon Thin-Film Transistor in Consideration of Grain Boundary Distribution Mrs Proceedings. 808: 673. DOI: 10.1557/Proc-808-A4.13  0.274
2023 Li J, Zhang Y, Wang J, Yang H, Zhou X, Chan M, Wang X, Lu L, Zhang S. Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator. Acs Applied Materials & Interfaces. PMID 36709447 DOI: 10.1021/acsami.2c20176  0.273
2003 Lam S, Mok PKT, Ko PK, Chan M. High-isolation bonding pad design for silicon RFIC up to 20 GHz Ieee Electron Device Letters. 24: 601-603. DOI: 10.1109/Led.2003.816589  0.273
2016 Zhou S, Liu J, Deng Q, Xie C, Chan M. Depth-of-Focus Determination for Talbot Lithography of Large-Scale Free-Standing Periodic Features Ieee Photonics Technology Letters. 28: 2491-2494. DOI: 10.1109/Lpt.2016.2601639  0.273
2004 Lee W, Lam S, Chan M. Effects of spacer thickness on noise performance of bipolar transistors Ieee Transactions On Electron Devices. 51: 1534-1537. DOI: 10.1109/Ted.2004.833959  0.272
2016 Li S, Raju S, Zhou C, Chan M. Carbon Nanotube Contact Plug on Silicide for CMOS Compatible Interconnect Ieee Electron Device Letters. 37: 1-1. DOI: 10.1109/Led.2016.2561306  0.272
2001 Cheung WM, Cheng CF, Poon MC, Qin M, Yuen CY, Chan M. New MEMS Technology Using Multi-Layer NILC Poly-Si and NiSi Films Mrs Proceedings. 687: 167. DOI: 10.1557/Proc-687-B5.24  0.272
2004 Cheng CF, Leung TC, Poon MC, Chan M. Large-grain polysilicon crystallization enhancement using pulsed RTA Ieee Electron Device Letters. 25: 553-555. DOI: 10.1109/Led.2004.831588  0.269
2002 Qin M, Poon MC, Fan LJ, Chan M, Yuen CY, Chan WY. Study of grain growth of polysilicon formed by nickel-induced-lateral-crystallization of amorphous silicon and subsequent high temperature annealing Thin Solid Films. 406: 17-22. DOI: 10.1016/S0040-6090(01)01722-9  0.268
2018 Zhou S, Mu S, Raju S, Prawoto C, Ruan X, Ng K, Chan M. Prototyping of Terahertz Metasurface by One-Step Lithographically Defined Templating Ieee Photonics Technology Letters. 30: 971-974. DOI: 10.1109/Lpt.2018.2828122  0.266
2002 Xu W, Li J, Xue M, Carles M, Wilhelm Trau D, Lenigk R, Sucher NJ, Ip NY, Chan M. Surface characterization of DNA microarray on silicon dioxide and compatible silicon materials in the immobilization process Materials Research Society Symposium - Proceedings. 711: 25-30. DOI: 10.1557/Proc-711-Ff2.9.1  0.266
2020 Xiao Y, Ma Z, Prawoto C, Zhou C, Chan M. Ultralow- ${k}$ Dielectric With Structured Pores for Interconnect Delay Reduction Ieee Transactions On Electron Devices. 67: 2071-2075. DOI: 10.1109/Ted.2020.2983230  0.265
2023 Li J, Guan Y, Li J, Zhang Y, Zhang Y, Chan M, Wang X, Lu L, Zhang S. Ultra-thin gate insulator of atomic-layer-deposited AlOand HfOfor amorphous InGaZnO thin-film transistors. Nanotechnology. PMID 36962937 DOI: 10.1088/1361-6528/acc742  0.265
1999 Singla S, Poon MC, Chan M, Qin M, Chan WY, Yuen CY, Ko PK, Wong H. Effect of electric field on metal induced lateral crystallization of amorphous silicon Mrs Proceedings. 587. DOI: 10.1557/Proc-587-O8.5  0.264
2018 Zhou C, Raju S, Li B, Chan M, Chai Y, Yang CY. Self‐Driven Metal–Semiconductor–Metal WSe2 Photodetector with Asymmetric Contact Geometries Advanced Functional Materials. 28: 1802954. DOI: 10.1002/Adfm.201802954  0.261
2015 Zhou C, Vyas AA, Wilhite P, Wang P, Chan M, Yang CY. Resistance determination for sub-100-nm carbon nanotube vias Ieee Electron Device Letters. 36: 71-73. DOI: 10.1109/Led.2014.2366301  0.26
2015 Zhou C, Wang X, Raju S, Lin Z, Villaroman D, Huang B, Chan HL, Chan M, Chai Y. Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT. Nanoscale. 7: 8695-700. PMID 25907959 DOI: 10.1039/C5Nr01072A  0.258
2016 Zhu J, He J, He X, Chan M, Wu W, Zhao W, Wang W, He P, Song L. Metal-Oxide-Semiconductor Field-Effect Transistor Resonant Detection on Terahertz Radiation in Optical Exciting Regime Journal of Computational and Theoretical Nanoscience. 13: 8902-8908. DOI: 10.1166/Jctn.2016.6061  0.257
2014 Yousefi N, Sun X, Lin X, Shen X, Jia J, Zhang B, Tang B, Chan M, Kim JK. Highly aligned graphene/polymer nanocomposites with excellent dielectric properties for high-performance electromagnetic interference shielding. Advanced Materials (Deerfield Beach, Fla.). 26: 5480-7. PMID 24715671 DOI: 10.1002/Adma.201305293  0.255
2016 Raju S, Li S, Zhou C, Chan M. Ultralow- $k$ Dielectric With Nanotubes Assisted Vertically Aligned Cylindrical Pores Ieee Electron Device Letters. 37: 1493-1496. DOI: 10.1109/Led.2016.2609099  0.255
1998 Poon MC, Deng F, Ho CH, Chan M, Lau SS. Process Windows of Titanium, Cobalt and Nickel Silicide In Deep Submicron Poly-Si Lines Mrs Proceedings. 514: 411. DOI: 10.1557/Proc-514-411  0.252
2005 Lee W, Chan ACK, Chan M. Optimization of base-to-emitter spacer thickness to maximize the frequency response of bipolar transistors Solid-State Electronics. 49: 554-557. DOI: 10.1016/J.Sse.2005.01.001  0.251
2005 Xu C, Li J, Wang Y, Cheng L, Lu Z, Chan M. A CMOS-compatible DNA microarray using optical detection together with a highly sensitive nanometallic particle protocol Ieee Electron Device Letters. 26: 240-242. DOI: 10.1109/Led.2005.844698  0.25
2018 Wang R, Li M, Raju S, Roberts RC, Chan M, Jiang L. On-Demand Band-Rejected Wideband Antenna Based on Peelable Resonator Membrane Ieee Antennas and Wireless Propagation Letters. 17: 2339-2343. DOI: 10.1109/Lawp.2018.2874217  0.249
2001 Wang H, Jagar S, Zhan N, Cheng CF, Poon MC, Chan M. Grain quality enhancement of nickel-crystallized polysilicon film in quantum-wire-like structures Mrs Proceedings. 686: 121. DOI: 10.1557/Proc-686-A4.1  0.244
2020 Xie C, Zhang M, Du W, Zhou C, Xiao Y, Zhang S, Chan M. Sensing-range-tunable pressure sensors realized by self-patterned-spacer design and vertical CNT arrays embedded in PDMS Rsc Advances. 10: 33558-33565. DOI: 10.1039/D0Ra06481E  0.242
2024 Zhang J, Wang W, Zhu J, Wang C, Zhu T, Zhao C, Wang J, Zhang S, Wang X, Chang KC, Meng H, Chan M, Zhang M. Ultraflexible Monolithic Three-Dimensional Static Random Access Memory. Acs Nano. PMID 38227541 DOI: 10.1021/acsnano.3c10182  0.24
2003 Lam S, Chan AC-, Lee W, Mok PKT, Ko PK, Chan M. A Workable Use of Floating-Body SOS MOSFET as a Transconductance Mixer The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2003.P9-4  0.239
2005 Wang Y, Xu C, Li J, Hsing I, Chan M. A CMOS active pixel sensor based DNA micro-array with nano-metallic particles detection protocol Solid-State Electronics. 49: 1933-1936. DOI: 10.1016/J.Sse.2005.09.015  0.238
2007 Wang Y, Xu C, Li J, He J, Chan M. A CMOS Image Sensor Utilizing Opacity of Nanometallic Particles for DNA Detection Ieee Transactions On Electron Devices. 54: 1549-1554. DOI: 10.1109/Ted.2007.896388  0.225
2003 Li J, Xue M, Wang H, Cheng L, Gao L, Lu Z, Chan M. Amplifying the electrical hybridization signals of DNA array by multilayer assembly of Au nanoparticle probes Analyst. 128: 917-923. PMID 12894831 DOI: 10.1039/B300827D  0.221
2001 Xue M, Xu W, Lenigk R, Carles M, Sucher NJ, Ip NY, Chan M. Integrated Photodiode DNA Identification System for Genetic Chip Applications The Japan Society of Applied Physics. 2001: 456-457. DOI: 10.7567/Ssdm.2001.A-7-5  0.22
2008 Yeung CK, Law JK, Sam SW, Ingebrandt S, Lau HY, Rudd JA, Chan M. The use of microelectrode array (MEA) to study rat peritoneal mast cell activation. Journal of Pharmacological Sciences. 107: 201-12. PMID 18566523 DOI: 10.1254/Jphs.Fp0080027  0.216
1999 Lau WY, Leung TWT, Ho SKW, Chan M, Machin D, Lau J, Chan ATC, Yeo W, Mok TSK, Yu SCH, Leung NWY, Johnson PJ. Adjuvant intra-arterial lipiodol-iodine-131 for resectable hepatocellular carcinoma: a prospective randomised trial The Lancet. 353: 797-801. PMID 10459961 DOI: 10.1016/S0140-6736(98)06475-7  0.182
2021 Wang J, Cai L, Chen J, Guo X, Liu Y, Ma Z, Xie Z, Huang H, Chan M, Zhu Y, Liao L, Shao Q, Chai Y. Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope. Science Advances. 7: eabf8744. PMID 34705513 DOI: 10.1126/sciadv.abf8744  0.168
2020 Zhou S, Chen S, Wu Y, Liao S, Li H, Xie C, Chan M. Bistable active spectral tuning of one-dimensional nanophotonic crystal by phase change. Optics Express. 28: 8341-8349. PMID 32225461 DOI: 10.1364/OE.387814  0.157
2010 Law JK, Yeung CK, Yiu KL, Rudd JA, Ingebrandt S, Chan M. A study of the relationship between pharmacologic preconditioning and adenosine triphosphate-sensitive potassium (KATP) channels on cultured cardiomyocytes using the microelectrode array. Journal of Cardiovascular Pharmacology. 56: 60-8. PMID 20648957  0.152
2021 Wang Q, Zheng Y, Zhou C, Chan M, Yang CY. Low-temperature grown vertically aligned carbon nanotube array for an optimal infrared bolometer. Nanotechnology. PMID 34547736 DOI: 10.1088/1361-6528/ac28dc  0.148
2006 Darja J, Chan MJ, Sugiyama M, Nakano Y. Four channel DFB laser array with integrated combiner for 1.55 μm CWDM systems by MOVPE selective area growth Ieice Electronics Express. 3: 522-528. DOI: 10.1587/elex.3.522  0.144
2020 Ma Z, Zhou S, Zhou C, Xiao Y, Li S, Chan M. Synthesis of Vertical Carbon Nanotube Interconnect Structures Using CMOS-Compatible Catalysts. Nanomaterials (Basel, Switzerland). 10. PMID 32992981 DOI: 10.3390/nano10101918  0.133
2023 Zhou S, Liu L, Deng Q, Liao S, Xue Q, Chan M. Intercoupling of Cascaded Metasurfaces for Broadband Spectral Scalability. Materials (Basel, Switzerland). 16. PMID 36903131 DOI: 10.3390/ma16052013  0.131
2012 Zuo X, Wang T, Ng RM, He J, Chan M. Cross-section control of stacked nanowires formed by Bosch process and oxidation. Journal of Nanoscience and Nanotechnology. 11: 10503-5. PMID 22408935 DOI: 10.1166/JNN.2011.4030  0.131
2007 Leung KN, Lo CH, Mok PKT, Mai YY, Leung WY, Chan MJ. Temperature-compensated CMOS ring oscillator for power-management circuits Electronics Letters. 43: 786-787. DOI: 10.1049/el:20070935  0.128
2006 Chan MJ, Postula A, Ding Y, Jozwiak L. A bang-bang PLL employing dynamic gain control for low jitter and fast lock times Analog Integrated Circuits and Signal Processing. 49: 131-140. DOI: 10.1007/s10470-006-7581-3  0.127
2014 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, ... ... Chan M, et al. Search for invisible decays of Higgs bosons in the vector boson fusion and associated ZH production modes. The European Physical Journal. C, Particles and Fields. 74: 2980. PMID 25814906 DOI: 10.1140/Epjc/S10052-014-2980-6  0.126
2013 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Aguilo E, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hammer J, ... ... Chan M, et al. Search for supersymmetry in pp collisions at [Formula: see text] TeV in events with a single lepton, jets, and missing transverse momentum. The European Physical Journal. C, Particles and Fields. 73: 2404. PMID 25814857 DOI: 10.1140/Epjc/S10052-013-2404-Z  0.124
2007 Darja J, Chan MJ, Sugiyama M, Nakano Y. Monolithically integrated four-channel DFB laser array by MOVPE selective area growth for 1.5 μ m CWDM systems Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 655-656. DOI: 10.1109/LEOS.2006.278866  0.117
2013 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Aguilo E, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hammer J, ... ... Chan M, et al. Search for physics beyond the standard model in events with τ leptons, jets, and large transverse momentum imbalance in pp collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 73: 2493. PMID 25814865 DOI: 10.1140/Epjc/S10052-013-2493-8  0.113
2013 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hörmann N, Hrubec J, ... ... Chan M, et al. Search for a standard-model-like Higgs boson with a mass in the range 145 to 1000 GeV at the LHC. The European Physical Journal. C, Particles and Fields. 73: 2469. PMID 25814864 DOI: 10.1140/Epjc/S10052-013-2469-8  0.113
2014 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, ... ... Chan M, et al. Measurement of top quark-antiquark pair production in association with a W or Z boson in pp collisions at [Formula: see text][Formula: see text]. The European Physical Journal. C, Particles and Fields. 74: 3060. PMID 25814914 DOI: 10.1140/Epjc/S10052-014-3060-7  0.111
2014 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hörmann N, Hrubec J, ... ... Chan M, et al. Probing color coherence effects in pp collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 74: 2901. PMID 25814895 DOI: 10.1140/Epjc/S10052-014-2901-8  0.107
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, ... ... Chan M, et al. Search for dark matter, extra dimensions, and unparticles in monojet events in proton-proton collisions at [Formula: see text][Formula: see text]. The European Physical Journal. C, Particles and Fields. 75: 235. PMID 26069461 DOI: 10.1140/Epjc/S10052-015-3451-4  0.104
2010 Chan MJ, Hsu CL. A strategy for interconnect testing in stacked mesh network-on-chip Proceedings - Ieee International Symposium On Defect and Fault Tolerance in Vlsi Systems. 122-128. DOI: 10.1109/DFT.2010.21  0.095
2014 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, ... ... Chan M, et al. Measurement of jet multiplicity distributions in [Formula: see text] production in pp collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 74: 3014. PMID 25814909 DOI: 10.1140/Epjc/S10052-014-3014-0  0.095
2009 Yeung CK, Law JK, Sam SW, Ingebrandt S, Lau HY, Rudd JA, Chan M. Modulatory action of potassium channel openers on field potential and histamine release from rat peritoneal mast cells. Canadian Journal of Physiology and Pharmacology. 87: 624-32. PMID 19767887 DOI: 10.1139/y09-047  0.094
2020 Xie C, Zhang M, Du W, Zhou C, Xiao Y, Zhang S, Chan M. Sensing-range-tunable pressure sensors realized by self-patterned-spacer design and vertical CNT arrays embedded in PDMS. Rsc Advances. 10: 33558-33565. PMID 35515030 DOI: 10.1039/d0ra06481e  0.093
2014 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, ... ... Chan M, et al. Observation of the diphoton decay of the Higgs boson and measurement of its properties. The European Physical Journal. C, Particles and Fields. 74: 3076. PMID 25814871 DOI: 10.1140/Epjc/S10052-014-3076-Z  0.092
2016 Zhou C, Senegor R, Baron Z, Chen Y, Raju S, Vyas AA, Chan M, Chai Y, Yang CY. Synthesis and interface characterization of CNTs on graphene. Nanotechnology. 28: 054007. PMID 28029110 DOI: 10.1088/1361-6528/28/5/054007  0.092
2014 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hörmann N, Hrubec J, ... ... Chan M, et al. Study of the production of charged pions, kaons, and protons in pPb collisions at [Formula: see text]5.02[Formula: see text]. The European Physical Journal. C, Particles and Fields. 74: 2847. PMID 25814892 DOI: 10.1140/Epjc/S10052-014-2847-X  0.086
2006 Li J, Wang Y, Lu Z, Chan M. Enhancing deoxyribonucleic acid (DNA) detection sensitivity through microconcentration on patterned fluorocarbon polymer surface. Analytica Chimica Acta. 571: 34-9. PMID 17723416 DOI: 10.1016/J.Aca.2006.04.044  0.085
1999 Wu CG, Lin YC, Chan MJ, Chien LN. Steric effect and mobility of the alkyl chain in regio-irregular poly-3-alkylthiophenes Journal of Polymer Science, Part B: Polymer Physics. 37: 1763-1772. DOI: 10.1002/(SICI)1099-0488(19990801)37:15<1763::AID-POLB2>3.0.CO;2-E  0.085
2012 Li J, Burman C, Chan M. SU-E-J-14: Evaluation of Mechanical Accuracy of Electronic Portal Imaging Devise on Its Use in Patient Specific IMRT QA. Medical Physics. 39: 3655. PMID 28517581 DOI: 10.1118/1.4734847  0.083
2016 Belanger M, Saleh Z, Volpe T, Margiasso R, Li X, Chan M, Zhu X, Tang X. Validation of the Calypso Surface Beacon Transponder. Journal of Applied Clinical Medical Physics. 17: 223-234. PMID 28296319 DOI: 10.1120/jacmp.v17i4.6152  0.083
2016 Belanger M, Saleh Z, Volpe T, Margiasso R, Li X, Chan M, Zhu X, Tang X. Validation of the Calypso Surface Beacon Transponder. Journal of Applied Clinical Medical Physics / American College of Medical Physics. 17: 6152. PMID 27455489 DOI: 10.1120/Jacmp.V17I4.6152  0.083
1998 Wu CG, Chan MJ, Lin YC. Room temperature dedoping of conducting poly-3-alkylthiophenes Journal of Materials Chemistry. 8: 2657-2661.  0.082
2009 Yeung CK, Sommerhage F, Wrobel G, Law JK, Offenhäusser A, Rudd JA, Ingebrandt S, Chan M. To establish a pharmacological experimental platform for the study of cardiac hypoxia using the microelectrode array. Journal of Pharmacological and Toxicological Methods. 59: 146-52. PMID 19268710 DOI: 10.1016/j.vascn.2009.02.005  0.078
2014 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, ... ... Chan M, et al. Searches for electroweak production of charginos, neutralinos, and sleptons decaying to leptons and W, Z, and Higgs bosons in pp collisions at 8 TeV. The European Physical Journal. C, Particles and Fields. 74: 3036. PMID 25814912 DOI: 10.1140/Epjc/S10052-014-3036-7  0.078
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, Kiesenhofer W, ... ... Chan M, et al. Measurement of the differential cross section for top quark pair production in pp collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 75: 542. PMID 26640401 DOI: 10.1140/Epjc/S10052-015-3709-X  0.078
2013 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hörmann N, Hrubec J, ... ... Chan M, et al. Search for supersymmetry in hadronic final states with missing transverse energy using the variables α T and b-quark multiplicity in pp collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 73: 2568. PMID 25814868 DOI: 10.1140/Epjc/S10052-013-2568-6  0.077
2013 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hörmann N, Hrubec J, ... ... Chan M, et al. Jet and underlying event properties as a function of charged-particle multiplicity in proton-proton collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 73: 2674. PMID 25814851 DOI: 10.1140/Epjc/S10052-013-2674-5  0.071
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, Kiesenhofer W, ... ... Chan M, et al. Distributions of topological observables in inclusive three- and four-jet events in pp collisions at [Formula: see text][Formula: see text]. The European Physical Journal. C, Particles and Fields. 75: 302. PMID 26190937 DOI: 10.1140/Epjc/S10052-015-3491-9  0.071
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, Kiesenhofer W, ... ... Chan M, et al. Constraints on parton distribution functions and extraction of the strong coupling constant from the inclusive jet cross section in pp collisions at [Formula: see text][Formula: see text]. The European Physical Journal. C, Particles and Fields. 75: 288. PMID 26146483 DOI: 10.1140/Epjc/S10052-015-3499-1  0.07
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, Kiesenhofer W, ... ... Chan M, et al. Measurements of differential and double-differential Drell-Yan cross sections in proton-proton collisions at [Formula: see text][Formula: see text]. The European Physical Journal. C, Particles and Fields. 75: 147. PMID 26041973 DOI: 10.1140/Epjc/S10052-015-3364-2  0.07
2013 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hörmann N, Hrubec J, ... ... Chan M, et al. Measurement of masses in the [Formula: see text] system by kinematic endpoints in pp collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 73: 2494. PMID 25814866 DOI: 10.1140/Epjc/S10052-013-2494-7  0.069
2021 Zhang X, Lu J, Wang Z, Wang R, Wei J, Shi T, Dou C, Wu Z, Zhu J, Shang D, Xing G, Chan M, Liu Q, Liu M. Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks. Science Bulletin. 66: 1624-1633. PMID 36654296 DOI: 10.1016/j.scib.2021.04.014  0.066
2017 Chim MM, Chow CY, Davies JF, Chan M. Effects of Relative Humidity and Particle Phase Water on the Heterogeneous OH Oxidation of 2-Methylglutaric Acid Aqueous Droplets. The Journal of Physical Chemistry. A. PMID 28195722 DOI: 10.1021/acs.jpca.6b11606  0.065
2017 Xiang H, Chan M, Brown V, Huo YR, Chan L, Ridley L. Systematic review and meta-analysis of the diagnostic accuracy of low-dose computed tomography of the kidneys, ureters and bladder for urolithiasis. Journal of Medical Imaging and Radiation Oncology. PMID 28139077 DOI: 10.1111/1754-9485.12587  0.064
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, Kiesenhofer W, ... ... Chan M, et al. Nuclear effects on the transverse momentum spectra of charged particles in pPb collisions at [Formula: see text][Formula: see text]. The European Physical Journal. C, Particles and Fields. 75: 237. PMID 26069462 DOI: 10.1140/Epjc/S10052-015-3435-4  0.063
2014 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, ... ... Chan M, et al. Search for heavy neutrinos and [Formula: see text] bosons with right-handed couplings in proton-proton collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 74: 3149. PMID 25814876 DOI: 10.1140/Epjc/S10052-014-3149-Z  0.062
2009 Lin CC, Hsu CJ, Chan MJ, Chung CH, Hong CC, Yang HJ. Design of a computer-based triangle chess machine Lecture Notes in Electrical Engineering. 28: 575-579. DOI: 10.1007/978-0-387-85437-3_58  0.061
2016 Cheng CT, Chan M, Wilson KR. Importance of Unimolecular HO2 Elimination in the Heterogeneous OH Reaction of Highly Oxygenated Tartaric Acid Aerosol. The Journal of Physical Chemistry. A. PMID 27397411 DOI: 10.1021/acs.jpca.6b05289  0.06
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, ... ... Chan M, et al. Measurement of the inclusive 3-jet production differential cross section in proton-proton collisions at 7 TeV and determination of the strong coupling constant in the TeV range. The European Physical Journal. C, Particles and Fields. 75: 186. PMID 25983654 DOI: 10.1140/Epjc/S10052-015-3376-Y  0.059
2010 Chan MJ. Cyrus, Yhwh's bird of prey (Isa. 46.11): Echoes of an ancient near eastern metaphor Journal For the Study of the Old Testament. 35: 113-127. DOI: 10.1177/0309089210365963  0.057
2014 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, ... ... Chan M, et al. Measurement of differential cross sections for the production of a pair of isolated photons in pp collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 74: 3129. PMID 25814874 DOI: 10.1140/Epjc/S10052-014-3129-3  0.055
2011 Lesser GJ, Case LD, Mirlohi S, Harmon M, Chan M, Duncan S, Dietrich A. Taste and smell abnormalities (TSA) in patients with newly diagnosed malignant gliomas (MG) treated with combined modality therapy (CMT). Journal of Clinical Oncology : Official Journal of the American Society of Clinical Oncology. 29: e19646. PMID 28021818 DOI: 10.1200/Jco.2011.29.15_Suppl.E19646  0.055
2014 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, ... ... Chan M, et al. Measurement of prompt ψ(2S) to J/ψ yield ratios in Pb-Pb and p-p collisions at sqrt[sNN]=2.76  TeV. Physical Review Letters. 113: 262301. PMID 25615312 DOI: 10.1103/Physrevlett.113.262301  0.054
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, Kiesenhofer W, ... ... Chan M, et al. Search for decays of stopped long-lived particles produced in proton-proton collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 75: 151. PMID 25983648 DOI: 10.1140/Epjc/S10052-015-3367-Z  0.051
2016 Wang Y, An FF, Chan M, Friedman B, Rodriguez EA, Tsien RY, Aras O, Ting R. (18)F-positron-emitting/fluorescent labeled erythrocytes allow imaging of internal hemorrhage in a murine intracranial hemorrhage model. Journal of Cerebral Blood Flow and Metabolism : Official Journal of the International Society of Cerebral Blood Flow and Metabolism. 271678X16682510. PMID 28054494 DOI: 10.1177/0271678X16682510  0.051
2011 Lee S, Lee YH, Chan MJ. Perceived importance of Confucianism values on education: An empirical study in electronics and information technology companies in Taiwan 2011 Ieee 3rd International Conference On Communication Software and Networks, Iccsn 2011. 483-487. DOI: 10.1109/ICCSN.2011.6013877  0.05
2017 Ezekowitz JA, O'Meara E, McDonald MA, Abrams H, Chan M, Ducharme A, Giannetti N, Grzeslo A, Hamilton PG, Heckman GA, Howlett JG, Koshman SL, Lepage S, McKelvie RS, Moe GW, et al. 2017 Comprehensive Update of the Canadian Cardiovascular Society Guidelines for the Management of Heart Failure. The Canadian Journal of Cardiology. 33: 1342-1433. PMID 29111106 DOI: 10.1016/j.cjca.2017.08.022  0.05
2015 Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, Hrubec J, Jeitler M, ... ... Chan M, et al. Measurement of electroweak production of two jets in association with a Z boson in proton-proton collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 75: 66. PMID 25838791 DOI: 10.1140/Epjc/S10052-014-3232-5  0.049
2017 Tarantola A, Blanchi S, Cappelle J, Ly S, Chan M, In S, Peng Y, Hing C, Taing CN, Ly S, Bourhy H, Buchy P, Dussart P, Mary JY. Rabies Postexposure Prophylaxis (PEP) Noncompletion After Dog Bites: Estimating the Unseen to Meet the Needs of the Underserved. American Journal of Epidemiology. PMID 29020186 DOI: 10.1093/aje/kwx234  0.049
2013 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Aguilo E, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hammer J, ... ... Chan M, et al. Measurement of the sum of WW and WZ production with W+dijet events in pp collisions at [Formula: see text]. The European Physical Journal. C, Particles and Fields. 73: 2283. PMID 25814853 DOI: 10.1140/Epjc/S10052-013-2283-3  0.048
2017 Chan M, Kelly J, Tapsell L. Dietary Modeling of Foods for Advanced CKD Based on General Healthy Eating Guidelines: What Should Be on the Plate? American Journal of Kidney Diseases : the Official Journal of the National Kidney Foundation. PMID 28129911 DOI: 10.1053/j.ajkd.2016.09.025  0.048
2014 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hartl C, Hörmann N, ... ... Chan M, et al. Measurement of WZ and ZZ production in pp collisions at [Formula: see text] in final states with b-tagged jets. The European Physical Journal. C, Particles and Fields. 74: 2973. PMID 25814904 DOI: 10.1140/Epjc/S10052-014-2973-5  0.046
2017 Chan M, Kakitsubata Y, Hayashi T, Ahmadi A, Yao S, Shukla NM, Oyama SY, Baba A, Nguyen B, Corr M, Suda Y, Carson DA, Cottam HB, Wakao M. Structure-activity relationship studies of pyrimido[5,4-b]indoles as selective Toll-like receptor 4 ligands. Journal of Medicinal Chemistry. PMID 29049886 DOI: 10.1021/acs.jmedchem.7b00797  0.046
2016 Chan M, Jiang B, Ng SY, Tan TY. Novel cost-effective quality control approach for the Cepheid Xpert CT/NG assay for the detection of Chlamydia Trachomatis and Neisseria Gonorrhoeae. Journal of Microbiological Methods. PMID 27091503 DOI: 10.1016/j.mimet.2016.04.010  0.046
2014 Chatrchyan S, Khachatryan V, Sirunyan AM, Tumasyan A, Adam W, Bergauer T, Dragicevic M, Erö J, Fabjan C, Friedl M, Frühwirth R, Ghete VM, Hörmann N, Hrubec J, Jeitler M, ... ... Chan M, et al. Measurement of the top-quark mass in all-jets [Formula: see text] events in pp collisions at [Formula: see text] TeV. The European Physical Journal. C, Particles and Fields. 74: 2758. PMID 25814885 DOI: 10.1140/Epjc/S10052-014-2758-X  0.045
2016 Douma JA, Akrum RA, Joe RT, Chan M, Codrington J, Vreden SG. A Case of Lagochilascariasis in Suriname with the Involvement of the ENT System and the Skull Base. The American Journal of Tropical Medicine and Hygiene. PMID 27139450 DOI: 10.4269/ajtmh.15-0792  0.044
2017 Chong E, Ho E, Baldevarona-Llego J, Chan M, Wu L, Tay L, Ding YY, Lim WS. Frailty in Hospitalized Older Adults: Comparing Different Frailty Measures in Predicting Short- and Long-term Patient Outcomes. Journal of the American Medical Directors Association. PMID 29153536 DOI: 10.1016/j.jamda.2017.10.006  0.043
2015 Li G, Ballangrud A, Chan M, Ma R, Beal K, Yamada Y, Chan T, Lee J, Parhar P, Mechalakos J, Hunt M. Clinical experience with two frameless stereotactic radiosurgery (fSRS) systems using optical surface imaging for motion monitoring. Journal of Applied Clinical Medical Physics. 16: 149-162. PMID 28297216 DOI: 10.1120/jacmp.v16i4.5416  0.042
2017 Fisher D, Michaels J, Hase R, Zhang J, Kataria S, Sim B, Tsang JK, Pollard J, Chan M, Swaminathan S. Outpatient parenteral antibiotic therapy (OPAT) in Asia: missing an opportunity. The Journal of Antimicrobial Chemotherapy. PMID 28077673 DOI: 10.1093/jac/dkw551  0.042
2011 Xu JJ, Chan MJ, Yang YC. Fluoxetine as a treatment for post-traumatic stress disorder Neurosciences. 16: 257-262. PMID 21677618  0.041
2013 Long X, Liu Q, Chan M, Wang Q, Sun SS. Metabolic engineering and profiling of rice with increased lysine. Plant Biotechnology Journal. 11: 490-501. PMID 23279104 DOI: 10.1111/pbi.12037  0.04
2012 Law KH, Chan MJ, Jackson MD. Societal costs of transportation fuels: Enabling a true comparison of alternatives to conventional fuels Asme 2012 6th International Conference On Energy Sustainability, Es 2012, Collocated With the Asme 2012 10th International Conference On Fuel Cell Science, Engineering and Technology. 681-689. DOI: 10.1115/ES2012-91465  0.039
2008 Waterland LR, Pont JN, Hooks ML, Chan MJ, Addy M. Full fuel cycle assessment of alternative transportation fuels in California Proceedings of the Air and Waste Management Association's Annual Conference and Exhibition, Awma. 2: 1251-1265.  0.038
2017 Chan M, Dadul T, Langlais R, Russell D, Ahmad M. Accuracy of extraoral bite-wing radiography in detecting proximal caries and crestal bone loss. Journal of the American Dental Association (1939). PMID 29096875 DOI: 10.1016/j.adaj.2017.08.032  0.038
1992 Chan MJ. Silicone breast implants and cancer New Zealand Medical Journal. 105: 181. PMID 1589170  0.037
2016 Lentucci C, Belkina A, Cederquist CT, Chan M, Johnson HE, Prasad S, Lopacinski A, Nikolajczyk BS, Monti S, Snyder-Cappione J, Tanasa B, Cardamone MD, Perissi V. Inhibition of Ubc13-mediated ubiquitination by GPS2 regulates multiple stages of B cell development. The Journal of Biological Chemistry. PMID 28039360 DOI: 10.1074/Jbc.M116.755132  0.037
2016 Brugaletta S, Gori T, Low A, Tousek P, Bermudez EP, Lara JG, Ortega-Paz L, Schulz E, Chan M, Kocka V, Hurtado J, Gomez-Hospital JA, Muenzel T, Lee CH, Cequier A, et al. TCT-404 ABSORB bioresorbable vascular scaffold vs. everolimus-eluting metallic stent in ST-segment elevation myocardial infarction (BVS EXAMINATION study): 2-year results from a propensity score matched comparison. Journal of the American College of Cardiology. 68: B164. PMID 27969754 DOI: 10.1016/j.jacc.2016.09.539  0.036
2017 Chong E, Ho E, Baldevarona-Llego J, Chan M, Wu L, Tay L. Frailty and Risk of Adverse Outcomes in Hospitalized Older Adults: A Comparison of Different Frailty Measures. Journal of the American Medical Directors Association. PMID 28587850 DOI: 10.1016/j.jamda.2017.04.011  0.035
2003 Chan MJ. The authorial parent: An intellectual property model of parental rights New York University Law Review. 78: 1186-1226.  0.035
1984 Beatty CJ, Chan MJ. Chinese scholars abroad: Changes in perceived academic needs The Esp Journal. 3: 53-59. DOI: 10.1016/0272-2380(84)90007-6  0.034
2017 Teh YL, Goh WL, Tan SH, Yong G, Sairi ANH, Soo KC, Ong J, Chia C, Tan G, Soeharno H, Tan MH, Chan M, Sathiyamoorthy S, Sittampalam K, Teh J, et al. Treatment and outcomes of melanoma in Asia: Results from the National Cancer Centre Singapore. Asia-Pacific Journal of Clinical Oncology. PMID 29052960 DOI: 10.1111/ajco.12802  0.033
2010 Tseng FW, Kuo TT, Lu PH, Chan HL, Chan MJ, Hui RC. Long-term follow-up study of clear cell papulosis. Journal of the American Academy of Dermatology. 63: 266-73. PMID 20605258 DOI: 10.1016/j.jaad.2009.08.056  0.032
2013 Chan MJ. Joseph and Jehoiachin: On the Edge of Exodus Zeitschrift Fur Die Alttestamentliche Wissenschaft. 125: 566-577. DOI: 10.1515/zaw-2013-0033  0.032
2014 Liao HC, Chiang CC, Niu DM, Wang CH, Kao SM, Tsai FJ, Huang YH, Liu HC, Huang CK, Gao HJ, Yang CF, Chan MJ, Lin WD, Chen YJ. Detecting multiple lysosomal storage diseases by tandem mass spectrometry--a national newborn screening program in Taiwan. Clinica Chimica Acta; International Journal of Clinical Chemistry. 431: 80-6. PMID 24513544 DOI: 10.1016/j.cca.2014.01.030  0.03
2017 Chan M, Grehn M, Cremers F, Siebert FA, Wurster S, Huttenlocher S, Dunst J, Hildebrandt G, Schweikard A, Rades D, Ernst F, Blanck O. Dosimetric Implications of Residual Tracking Errors During Robotic SBRT of Liver Metastases. International Journal of Radiation Oncology, Biology, Physics. 97: 839-848. PMID 28244421 DOI: 10.1016/j.ijrobp.2016.11.041  0.029
1993 Chan MJ. New patient confidentially rules--good or bad New Zealand Medical Journal. 106: 481. PMID 8233198  0.029
2016 Liu Y, Saleh Z, Song Y, Obcemea C, Chan M, Li X, Happersett L, Shi C, Qian X, Tang X. SU-F-J-27: Segmentation of Prostate CBCT Images with Implanted Calypso Transponders Using Double Haar Wavelet Transform. Medical Physics. 43: 3412. PMID 28048093 DOI: 10.1118/1.4955935  0.029
2017 Chan M, Johnston C, Bever A. Exploring Health Service Underutilization: A Process Evaluation of the Newcomer Women's Health Clinic. Journal of Immigrant and Minority Health. PMID 28660392 DOI: 10.1007/s10903-017-0616-2  0.026
2016 Esposito S, Bassetti M, Bonnet E, Bouza E, Chan M, De Simone G, Dryden M, Gould I, Lye DC, Saeed K, Segreti J, Unal S, Yalcin AN. Hot topics in the diagnosis and management of skin and soft-tissue infections. International Journal of Antimicrobial Agents. PMID 27216380 DOI: 10.1016/j.ijantimicag.2016.04.011  0.026
2015 Bannard-Smith J, Alexander P, Glassford N, Chan MJ, Lee M, Wong BT, Crawford G, Bailey M, Bellomo R. Haemodynamic and biochemical responses to fluid bolus therapy with human albumin solution, 4% versus 20%, in critically ill adults. Critical Care and Resuscitation : Journal of the Australasian Academy of Critical Care Medicine. 17: 122-8. PMID 26017130  0.026
2017 Bring BV, Chan M, Devine RC, Collins CL, Diehl J, Burkam B. Functional Movement Screening and Injury Rates in High School and Collegiate Runners: A Retrospective Analysis of 3 Prospective Observational Studies. Clinical Journal of Sport Medicine : Official Journal of the Canadian Academy of Sport Medicine. PMID 28742606 DOI: 10.1097/JSM.0000000000000459  0.025
1989 Chan MJ. Physiotherapists--a professional body New Zealand Medical Journal. 102: 418. PMID 2761883  0.024
2017 Fogel A, Goh AT, Fries LR, Sadananthan SA, Velan SS, Michael N, Tint MT, Fortier MV, Chan MJ, Toh JY, Chong YS, Tan KH, Yap F, Shek LP, Meaney MJ, et al. Faster eating rates are associated with higher energy intakes during an ad libitum meal, higher BMI and greater adiposity among 4·5-year-old children: results from the Growing Up in Singapore Towards Healthy Outcomes (GUSTO) cohort. The British Journal of Nutrition. 1-10. PMID 28462734 DOI: 10.1017/S0007114517000848  0.023
2012 Gerrie AS, Bruyere H, Chan MJ, Dalal CB, Ramadan KM, Huang SJ, Toze CL, Gillan TL. Immunoglobulin heavy chain (IGH@) translocations negatively impact treatment-free survival for chronic lymphocytic leukemia patients who have an isolated deletion 13q abnormality. Cancer Genetics. 205: 523-7. PMID 22939229 DOI: 10.1016/j.cancergen.2012.05.011  0.022
2017 Chan MJ, Chung T, Glassford NJ, Bellomo R. Near-Infrared Spectroscopy in Adult Cardiac Surgery Patients: A Systematic Review and Meta-Analysis. Journal of Cardiothoracic and Vascular Anesthesia. 31: 1155-1165. PMID 28800981 DOI: 10.1053/j.jvca.2017.02.187  0.022
2016 Trad MA, Zhong LH, Llorin RM, Tan SY, Chan M, Archuleta S, Sulaiman Z, Tam VH, Lye DC, Fisher DA. Ertapenem in outpatient parenteral antimicrobial therapy for complicated urinary tract infections. Journal of Chemotherapy (Florence, Italy). 1-5. PMID 27239695 DOI: 10.1080/1120009X.2016.1158937  0.02
2014 Huang WH, Yen TH, Chan MJ, Su YJ. Environmental carbon monoxide level is associated with the level of high-sensitivity C-reactive protein in peritoneal dialysis patients. Medicine. 93: e181. PMID 25474434 DOI: 10.1097/MD.0000000000000181  0.019
2016 An FF, Chan M, Kommidi H, Ting R. Dual PET and Near-Infrared Fluorescence Imaging Probes as Tools for Imaging in Oncology. Ajr. American Journal of Roentgenology. 1-8. PMID 27223168 DOI: 10.2214/AJR.16.16181  0.019
2002 En WG, Jones EC, Sturm JC, Chan MJ, Tiwari S, Hirose M. Materials Research Society Symposium - Proceedings: Preface Materials Research Society Symposium - Proceedings. 686.  0.018
2016 Murphy AD, Chan M, Fairbank SM. Tibial nerve palsy as the presenting feature of posterior tibial artery pseudoaneurysm. Anz Journal of Surgery. PMID 27806430 DOI: 10.1111/ans.13825  0.017
2017 Gorovets D, Ayala-Peacock D, Tybor DJ, Rava P, Ebner D, Cielo D, Norén G, Wazer DE, Chan M, Hepel JT. Multi-institutional Nomogram Predicting Survival Free From Salvage Whole Brain Radiation After Radiosurgery in Patients With Brain Metastases. International Journal of Radiation Oncology, Biology, Physics. 97: 246-253. PMID 28068233 DOI: 10.1016/J.Ijrobp.2016.09.043  0.017
1993 Chan MJ. Thin end of the wedge New Zealand Medical Journal. 106: 390. PMID 8367100  0.017
1988 Chan MJ. Patient waiting times New Zealand Medical Journal. 101: 644. PMID 3173881  0.016
2017 Chan MJ, Wen YH, Huang YB, Chuang HY, Tain YL, Lily Wang YC, Hsu CN. Risk of tuberculosis comparison in new users of antitumour necrosis factor-α and with existing disease-modifying antirheumatic drug therapy. Journal of Clinical Pharmacy and Therapeutics. PMID 29119581 DOI: 10.1111/jcpt.12644  0.015
2014 Huang WH, Yen TH, Chan MJ, Su YJ. Impact of environmental particulate matter and peritoneal dialysis-related infection in patients undergoing peritoneal dialysis. Medicine. 93: e149. PMID 25437027 DOI: 10.1097/MD.0000000000000149  0.015
2014 Chua HR, Schneider AG, Sherry NL, Lotfy N, Chan MJ, Galtieri J, Wong GR, Lipcsey M, Matte Cde A, Collins A, Garcia-Alvarez M, Bellomo R. Initial and extended use of femoral versus nonfemoral double-lumen vascular catheters and catheter-related infection during continuous renal replacement therapy. American Journal of Kidney Diseases : the Official Journal of the National Kidney Foundation. 64: 909-17. PMID 24882583 DOI: 10.1053/j.ajkd.2014.04.022  0.014
2016 Chiang CL, Lee AS, Choi KK, Yeung SY, Wong YP, Leung WK, Lee WY, Chan M, Tung SY. Stereotactic Body Radiation Therapy (SBRT) Combined With Transarterial Chemoembolization (TACE) in BCLC Stage B and C Hepatocellular Carcinoma (HCC). International Journal of Radiation Oncology, Biology, Physics. 96: E162. PMID 27673942 DOI: 10.1016/j.ijrobp.2016.06.999  0.011
1992 Chan MJ, McLean NR, Soames JV. Intramuscular haemangioma of the orbicularis oris muscle British Journal of Oral and Maxillofacial Surgery. 30: 192-194. PMID 1622968 DOI: 10.1016/0266-4356(92)90157-E  0.011
1988 Chan MJ. Transfer of medical records New Zealand Medical Journal. 101: 430. PMID 3393337  0.011
2017 Chia PY, Yew HS, Ho H, Chow A, Sadarangani SP, Chan M, Kam YW, Chong CY, Thoon KC, Yung CF, Li JH, Lye DC, De PP, Ng LF, Yeo TW, et al. Clinical Features of Patients with Zika and dengue virus co-infection in Singapore. The Journal of Infection. PMID 28344113 DOI: 10.1016/J.Jinf.2017.03.007  0.01
2016 Saeed K, Dryden M, Bassetti M, Bonnet E, Bouza E, Chan M, Cortes N, Davis JS, Esposito S, Giordano G, Gould I, Hartwright D, Lye D, Marin M, Morgan-Jones R, et al. Prosthetic joints: shining lights on challenging blind spots. International Journal of Antimicrobial Agents. PMID 27939092 DOI: 10.1016/j.ijantimicag.2016.10.015  0.01
2016 Chan M, Ridley L, Dunn DJ, Tian DH, Liou K, Ozdirik J, Cheruvu C, Cao C. A systematic review and meta-analysis of multidetector computed tomography in the assessment of coronary artery bypass grafts. International Journal of Cardiology. 221: 898-905. PMID 27439070 DOI: 10.1016/j.ijcard.2016.06.264  0.01
2016 Nicholls J, Chan M, Kwong D. Susceptibility of the upper respiratory tract to influenza virus infection following desialylation. Hong Kong Medical Journal = Xianggang Yi Xue Za Zhi / Hong Kong Academy of Medicine. 22: 7-9. PMID 27390002  0.01
2016 Chan MJ. What is it that you love? Callaloo. 39: 656-663.  0.01
2015 Chan MJ, Huang YB, Wen YH, Chuang HY, Tain YL, Wang YL, Hsu CN. Compliance with risk management plan recommendations on laboratory monitoring of antitumor necrosis factor-α therapy in clinical practice. Journal of the Formosan Medical Association = Taiwan Yi Zhi. PMID 26602834 DOI: 10.1016/J.Jfma.2015.09.003  0.01
2015 Wong BT, Chan MJ, Glassford NJ, Mårtensson J, Bion V, Chai SY, Oughton C, Tsuji IY, Candal CL, Bellomo R. Mean arterial pressure and mean perfusion pressure deficit in septic acute kidney injury. Journal of Critical Care. PMID 26015150 DOI: 10.1016/j.jcrc.2015.05.003  0.01
2013 Chan MJ. Ira Regis: Comedic inflections of royal rage in Jewish court tales Jewish Quarterly Review. 103: 1-25. DOI: 10.1353/jqr.2013.0004  0.01
2010 Chan MJ. Isaiah 65-66 and the Genesis of reorienting speech Catholic Biblical Quarterly. 72: 445-463.  0.01
1992 Chan MJ. Health goals and responsibility of patients New Zealand Medical Journal. 105: 437-438. PMID 1297949  0.01
1989 Chan MJ. Paediatric fees New Zealand Medical Journal. 102: 447-448. PMID 2590298  0.01
1988 Chan MJ. Who disciplines the disciplinary committee? New Zealand Medical Journal. 101: 669. PMID 3186009  0.01
1974 Ko WH, Chan MJ. Aggregation of Phytophthora capsici zoospores and their interaction with zoospores of P. palmivora Journal of General Microbiology. 80: 549-551.  0.01
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