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Krishna Shenai - Publications

Affiliations: 
University of Illinois at Chicago, Chicago, IL, United States 
Area:
Electronics and Electrical Engineering, Energy
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194 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Shenai K. The Figure of Merit of a Semiconductor Power Electronics Switch Ieee Transactions On Electron Devices. 65: 4216-4224. DOI: 10.1109/Ted.2018.2866360  0.501
2015 Shenai K. Wide Bandgap (WBG) power switching devices for distributed clean energy systems (Invited Paper) Ecs Transactions. 69: 3-12. DOI: 10.1149/06911.0003ecst  0.422
2015 Shenai K, Raghothamachar B, Dudley M, Christou A. In-situ characterization of defect dynamics in 4H-SiC power diodes under high-voltage stressing Ecs Transactions. 66: 205-216. DOI: 10.1149/06601.0205ecst  0.429
2015 Shenai K. Thermal limitations in wide bandgap (WBG) semiconductor power switching devices Ecs Transactions. 66: 53-65. DOI: 10.1149/06601.0053ecst  0.446
2015 Arribas AP, Shang F, Krishnamurthy M, Shenai K. Simple and accurate circuit simulation model for SiC power MOSFETs Ieee Transactions On Electron Devices. 62: 449-457. DOI: 10.1109/Ted.2014.2384277  0.373
2015 Shenai K, Bakowski M, Ohtani N. Foreword special issue on wide bandgap power switching devices for energy efficiency and renewable energy integration Ieee Transactions On Electron Devices. 62: 245-247. DOI: 10.1109/Ted.2014.2383351  0.441
2015 Shenai K. Future prospects of widebandgap (WBG) semiconductor power switching devices Ieee Transactions On Electron Devices. 62: 248-257. DOI: 10.1109/Ted.2014.2360641  0.558
2015 Shenai K. The Invention and Demonstration of the IGBT [A Look Back] Ieee Power Electronics Magazine. 2: 12-16. DOI: 10.1109/MPEL.2015.2421751  0.372
2015 Arribas AP, Krishnamurthy M, Shenai K. Accurate characterization of switching losses in high-speed, high-voltage Power MOSFETs Ieee International Workshop On Integrated Power Packaging, Iwipp 2015. 95-98. DOI: 10.1109/IWIPP.2015.7295987  0.418
2015 Shenai K. Chip-level and package-level thermal constraints in power semiconductor switch modules Ieee International Workshop On Integrated Power Packaging, Iwipp 2015. 79-82. DOI: 10.1109/IWIPP.2015.7295983  0.428
2015 Shenai K. Wide bandgap (WBG) semiconductor power device datasheets and circuit models Ieee International Workshop On Integrated Power Packaging, Iwipp 2015. 32-35. DOI: 10.1109/IWIPP.2015.7295971  0.476
2015 Shenai K. Wide bandgap (WBG) semiconductor power converters for DC microgrid applications 2015 Ieee 1st International Conference On Direct Current Microgrids, Icdcm 2015. 263-268. DOI: 10.1109/ICDCM.2015.7152051  0.418
2015 Wu L, Qin J, Saeedifard M, Wasynczuk O, Shenai K. Loss comparison of Si- and SiC-based modular multilevel converter for medium/high-voltage applications Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 2015: 311-316. DOI: 10.1109/APEC.2015.7104368  0.443
2014 Pozo Arribas A, Krishnamurthy M, Shenai K. Accurate estimation of switching losses in SiC power MOSFET's Ecs Transactions. 64: 283-287. DOI: 10.1149/06407.0283ecst  0.345
2014 Gachovska TK, Radimov N, Gerolami C, Orr R, Hudgins JL, Shenai K. Characterization of GaN switches for solar invertors Ecs Transactions. 64: 273-279. DOI: 10.1149/06407.0273ecst  0.34
2014 Shenai K. On the power-handling capability of wide bandgap (WBG) semiconductor power switching devices Ecs Transactions. 64: 193-201. DOI: 10.1149/06407.0193ecst  0.457
2014 Guo L, Arribas AP, Krishnamurthy M, Shenai K, Wang J. Digital control of DC-DC converters employing wide band gap (WBG) power devices Ecs Transactions. 64: 155-161. DOI: 10.1149/06407.0155ecst  0.386
2014 Pozo Arribas A, Krishnamurthy M, Shenai K. A simple and accurate circuit simulation model for high-Voltage SiC power MOSFETs Ecs Transactions. 64: 99-110. DOI: 10.1149/06407.0099ecst  0.382
2014 Murthy-Bellur D, Kunin S, Ayana E, Palmer B, Leonarski J, Varigonda S, Shenai K. Design and performance of compact air-Cooled sic MOSFET inverters for low-Power variable speed drive applications Ecs Transactions. 64: 61-75. DOI: 10.1149/06407.0061ecst  0.393
2014 Shenai K. A critique of wide bandgap (WBG) power semiconductor device datasheets Ecs Transactions. 64: 13-17. DOI: 10.1149/06407.0013ecst  0.441
2014 Shenai K, Christou A, Dudley M, Ragothamachar B, Singh R. Crystal defects in wide bandgap semiconductors Ecs Transactions. 61: 283-293. DOI: 10.1149/06104.0283ecst  0.379
2014 Wu L, Qin J, Saeedifard M, Wasynczuk O, Shenai K. Efficiency Evaluation of the Modular Multilevel Converter Based on Si and SiC Switching Devices for Medium/High-Voltage Applications Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2014.2375875  0.56
2014 Shenai K, Chattopadhyay A. Optimization of High-Voltage Wide Bandgap Semiconductor Power Diodes Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2014.2371775  0.5
2014 Shenai K. Power electronic module: Enabling the 21st-century energy economy Ieee Power Electronics Magazine. 1: 27-32. DOI: 10.1109/MPEL.2014.2330459  0.378
2014 Shenai K, Dudley M, Davis RF. Rugged electrical power switching in semiconductors: A systems approach Proceedings of the Ieee. 102: 35-52. DOI: 10.1109/JPROC.2013.2278616  0.442
2013 Shenai K, Bakowski M, Ohtani N. Introduction to the focus issue on wide bandgap power semiconductors Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.019308jss  0.312
2013 Shenai K, Dudley M, Davis RF. Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.012308Jss  0.474
2013 Shenai K. True "Figure of Merit (FOM)" of a power semiconductor switch Ecs Transactions. 58: 199-210. DOI: 10.1149/05804.0199ecst  0.369
2013 Shenai K. Voltage switching limits of lateral GaN power devices Ecs Transactions. 58: 179-184. DOI: 10.1149/05804.0179ecst  0.493
2013 Shenai K. The perfect power semiconductor switch for 21st century global energy economy Journal of Circuits, Systems and Computers. 22. DOI: 10.1142/S0218126613400203  0.422
2013 Shenai K. Power MOSFET screening to improve field-reliability of power supplies 2013 Ieee Energytech, Energytech 2013. DOI: 10.1109/EnergyTech.2013.6645343  0.315
2013 Shenai K. Optimization of 4H-SiC power Schottky Barrier Diodes 2013 Ieee Energytech, Energytech 2013. DOI: 10.1109/EnergyTech.2013.6645337  0.463
2013 Shenai K. High-frequency switching limitations in Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices for boost converter applications 2013 Ieee Energytech, Energytech 2013. DOI: 10.1109/EnergyTech.2013.6645319  0.502
2013 Shenai K. Accurate design of high-performance synchronous buck DC-DC power converters Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 435-438. DOI: 10.1109/APEC.2013.6520246  0.395
2013 Shenai K. Switching megawatts with power transistors Electrochemical Society Interface. 22: 47-53.  0.372
2012 Shenai K, Shah K. Design of high-performance synchronous buck DC-DC converters using GaN power HEMTs Materials Science Forum. 717: 1307-1310. DOI: 10.4028/www.scientific.net/MSF.717-720.1307  0.459
2012 Shenai K, Neudeck PG, Dudley M, Davis RF. Material defects and rugged electrical power switching in semiconductors Materials Science Forum. 717: 1077-1080. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1077  0.435
2012 Shenai K, Leong SK. High-performance broadband gallium nitride (GaN) power amplifiers for next generation communication applications Ecs Transactions. 45: 3-9. DOI: 10.1149/1.3701519  0.373
2012 Shenai K, Wu J, Cui H. Electro-thermal scaling constrains in chip-scale power inductors Ecs Transactions. 50: 367-375. DOI: 10.1149/05003.0367ecst  0.387
2012 Shenai K, Leong SK. Simple and accurate physics-based compact circuit simulation models for depletion-mode gallium nitride (GaN) RF power transistors Ecs Transactions. 50: 313-321. DOI: 10.1149/05003.0313ecst  0.377
2012 Leong SK, Shenai K. Broadband gallium nitride (GaN) power amplifiers Ecs Transactions. 50: 281-289. DOI: 10.1149/05003.0281ecst  0.431
2012 Shenai K. On the de-rating of 4H-silicon carbide (SiC) power schottky barrier diodes Ecs Transactions. 50: 95-101. DOI: 10.1149/05003.0095ecst  0.4
2012 Shah K, Shenai K. Simple and accurate circuit simulation model for gallium nitride power transistors Ieee Transactions On Electron Devices. 59: 2735-2741. DOI: 10.1109/TED.2012.2205691  0.416
2012 Ahmadi M, Shenai K. New, efficient, low-stress buck/boost bidirectional DC-DC converter 2012 Ieee Energytech, Energytech 2012. DOI: 10.1109/EnergyTech.2012.6304643  0.345
2011 Shah K, Shenai K. Performance evaluation of point-of-load chip-scale DC-DC power converters using silicon power MOSFETs and GaN power HEMTs 2011 Ieee Green Technologies Conference, Green 2011. DOI: 10.1109/GREEN.2011.5754851  0.394
2011 Shenai K, Bernstein GH, Wu J. Efficient integrated DC-DC power converters - Advanced technologies and new challenges Ieee 2011 Energytech, Energytech 2011. DOI: 10.1109/EnergyTech.2011.5948531  0.39
2011 Shenai K, Neudeck PG, Dudley M, Davis RF. High-power switching in semiconductors - What is beyond silicon thyristor? Ieee 2011 Energytech, Energytech 2011. DOI: 10.1109/EnergyTech.2011.5948527  0.429
2011 Abedinpour S, Shenai K. Insulated gate bipolar transistor Power Electronics Handbook. 73-90. DOI: 10.1016/B978-0-12-382036-5.00005-7  0.4
2010 Shenai K. Reliability of wide bandgap semiconductor power switching devices Proceedings of the Ieee 2010 National Aerospace and Electronics Conference, Naecon 2010. 322-327. DOI: 10.1109/NAECON.2010.5712971  0.413
2010 Shenai K, Shah K, Xing H. Performance evaluation of silicon and gallium nitride power FETs for DC/DC power converter applications Proceedings of the Ieee 2010 National Aerospace and Electronics Conference, Naecon 2010. 317-321. DOI: 10.1109/NAECON.2010.5712970  0.37
2010 Shenai K. Heterogeneous integration of DC-DC power converters 2010 Ieee International Conference of Electron Devices and Solid-State Circuits, Edssc 2010. DOI: 10.1109/EDSSC.2010.5713790  0.389
2008 Shenai K. Grand challenges in power semiconductors 2008 Ieee International Conference On Electron Devices and Solid-State Circuits, Edssc. DOI: 10.1109/EDSSC.2008.4760741  0.408
2007 Shenai K. Spacecraft Power Systems Design to Minimize Electro Magnetic Interference (EMI) Effects Progress in Electromagnetics Research Symposium. 24-29.  0.333
2007 Hamoui M, Shenai K. Design and modeling of planar power switching inductors for monolithic and single chip dc-dc power converters Progress in Electromagnetics Research Symposium. 39-42.  0.306
2005 Trivedi M, Shenai K. Power Semiconductor Devices The Electrical Engineering Handbook. 163-176. DOI: 10.1016/B978-012170960-0/50016-5  0.449
2004 Shenai K, Galloway KF, Schrimpf RD. The effects of space radiation exposure on power MOSFETS: A review International Journal of High Speed Electronics and Systems. 14: 445-463. DOI: 10.1142/S0129156404002454  0.46
2004 Shenai K. Power management of wireless OEM devices Proceedings of the International Conference On Microelectronics. 24: 35-38.  0.327
2003 Cavallaro C, Musumeci S, Pagano R, Raciti A, Shenai K. Analysis Modeling and Simulation of Low-Voltage MOSFETs in Synchronous-Rectifier Buck-Converter Applications Iecon Proceedings (Industrial Electronics Conference). 2: 1697-1702. DOI: 10.1109/IECON.2003.1280313  0.435
2003 Nigam S, Kim J, Luo B, Ren F, Chung GY, Shenai K, Neudeck PG, Pearton SJ, Williams JR. Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers Solid-State Electronics. 47: 1461-1464. DOI: 10.1016/S0038-1101(03)00072-8  0.428
2003 Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P. Effect of contact geometry on 4H-SiC rectifiers with junction termination extension Solid-State Electronics. 47: 57-60. DOI: 10.1016/S0038-1101(02)00273-3  0.376
2003 Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P. Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers Solid-State Electronics. 47: 61-64. DOI: 10.1016/S0038-1101(02)00272-1  0.338
2003 Shenai K, Cavallaro C, Musumeci S, Pagano R, Raciti A. Modeling Low-Voltage Power MOSFETs as Synchronous Rectifiers in Buck Converter Applications Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 3: 1794-1801.  0.451
2002 Shenai K, Trivedi M, Neudeck PG. Characterization of hard- and soft-switching performance of high-voltage Si and 4H-SiC PiN diodes Ieee Transactions On Electron Devices. 49: 1648-1656. DOI: 10.1109/Ted.2002.802645  0.605
2002 Shenai K. Power semiconductor devices: Design and manufacturing for improved field reliability (invited) Iccdcs 2002 - 4th Ieee International Caracas Conference On Devices, Circuits and Systems. DOI: 10.1109/ICCDCS.2002.1004104  0.358
2002 McShane E, Shenai K. The design, characterization, and modeling of RF LDMOSFETs on silicon-on-insulator material Ieee Transactions On Electron Devices. 49: 643-651. DOI: 10.1109/16.992874  0.542
2002 Trivedi M, McShane EA, Vijayalakshmi R, Mulay A, Abedinpour S, Atkinson S, Shenai K. An improved approach to application-specific power electronics education-switch characterization and modeling Ieee Transactions On Education. 45: 57-64. DOI: 10.1109/13.983222  0.773
2001 McShane EA, Shenai K. Junction-to-case thermal modeling and the significance of the junction power profile on thermal response European Solid-State Device Research Conference. 499-502. DOI: 10.1109/ESSDERC.2001.195310  0.704
2001 McShane EA, Shenai K. Thermal robustness of silicon-on-insulator versus bulk material in L-band RF power LDMOSFETs European Solid-State Device Research Conference. 167-170. DOI: 10.1109/ESSDERC.2001.195227  0.762
2001 Shenai K, Neudeck PG, Schwarze G. Design and technology of compact high-power converters Ieee Aerospace and Electronic Systems Magazine. 16: 27-31. DOI: 10.1109/62.911318  0.488
2001 McShane EA, Trivedi M, Shenai K. An improved approach to application-specific power electronics education - Curriculum development Ieee Transactions On Education. 44: 282-288. DOI: 10.1109/13.941001  0.777
2001 Shenai K. High-power robust semiconductor electronics technologies in the new millennium Microelectronics Journal. 32: 397-408. DOI: 10.1016/S0026-2692(01)00010-6  0.465
2001 Shenai K, McShane E. Current status and emerging trends in RF power FET technologies Ieee Mtt-S International Microwave Symposium Digest. 1: 1501-1504.  0.365
2001 Abedlnpour S, Shenai K. Stress analysis of DC-DC power converters Proceedings of the Intersociety Energy Conversion Engineering Conference. 1: 141-146.  0.303
2001 McShane E, Shenai K, Leong SK. A silicon-on-insulator 28-V RF power LDMOSFET for 1-GHz integrated power amplifier applications Ieee Mtt-S International Microwave Symposium Digest. 1: 2135-2138.  0.386
2001 Abedinpour S, Burra R, Shenai K. Two-dimensional finite element simulation and stress analysis of a full bridge DC-DC power converter Intelec, International Telecommunications Energy Conference (Proceedings). 205-212.  0.349
2001 Abedinpour S, Burra R, Shenai K. Two-dimensional finite element simulation and stress analysis of a full bridge DC-DC power converter Intelec, International Telecommunications Energy Conference (Proceedings). 205-212.  0.349
2001 McShane E, Shenai K. A CMOS monolithic 5-MHz, 5-V, 250-mA, 56% efficiency DC/DC switch-mode boost converter with dynamic PWM for embedded power management Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 1: 653-657.  0.319
2001 Trivedi M, Shenai K. Hard- and soft-switching buck converter performance of high-voltage 4H-SiC and Si P-i-N diodes Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 1: 391-395.  0.364
2001 Trivedi M, Shenai K, Joerg P. Evaluation of high-voltage IGBT for series resonant DC-DC converter application Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 2: 1237-1241.  0.373
2000 Keskar N, Shenai K, Neudeck P. Defect modeling and simulation of 4-H SiC P-N diode Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1351  0.434
2000 Keskar N, Shenai K, Neudeck PG. Transient characterization of SiC P-N diode Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1343  0.484
2000 Trivedi M, Shenai K. Performance of silicon carbide devices in power converters Iwipp 2000 - International Workshop On Integrated Power Packaging. 17-20. DOI: 10.1109/IWIPP.2000.885172  0.4
2000 McShane EA, Shenai K. Correct-by-design CAD enhancement for em1 and signal integrity Proceedings - International Symposium On Quality Electronic Design, Isqed. 2000: 341-345. DOI: 10.1109/ISQED.2000.838894  0.707
2000 McShane EA, Shenai K. Technologies and design of low-power RF microsystems 2000 22nd International Conference On Microelectronics, Miel 2000 - Proceedings. 1: 107-115. DOI: 10.1109/ICMEL.2000.840536  0.759
2000 Vijayalakshmi R, Trivedi M, Shenai K. Charge-control modeling of power bipolar junction transistors Ieee Transactions On Power Electronics. 15: 1072-1080. DOI: 10.1109/63.892821  0.438
2000 Trivedi M, Shenai K. Parasitic extraction methodology for insulated gate bipolar transistors Ieee Transactions On Power Electronics. 15: 799-804. DOI: 10.1109/63.849051  0.468
2000 Shenai K. Made-to-order power Ieee Spectrum. 37: 50-55. DOI: 10.1109/6.852052  0.528
2000 Shenai K, McShane E, Leong SK. Lateral RF SOI power MOSFETs with fT of 6.9 GHz Ieee Electron Device Letters. 21: 500-502. DOI: 10.1109/55.870614  0.544
2000 Trivedi M, Shenai K. Practical limits of high-voltage thyristors on wide band-gap materials Journal of Applied Physics. 88: 7313-7320. DOI: 10.1063/1.1326853  0.533
2000 Azzopardi S, Trivedi M, Zardini C, Shenai K. Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT Solid-State Electronics. 44: 1899-1908. DOI: 10.1016/S0038-1101(00)00184-2  0.438
2000 Trivedi M, Khandelwal P, Shenai K, Leong SK. Design and modeling of bulk and SOI power LDMOSFETs for RF wireless applications Solid-State Electronics. 44: 1343-1354. DOI: 10.1016/S0038-1101(00)00084-8  0.559
2000 Shenai K, Trivedi M. Silicon carbide power electronics for high temperature applications Ieee Aerospace Conference Proceedings. 5: 431-437.  0.396
2000 Trivedi M, Shenai K. Device optimization and modeling for resonant power conversion Ieee International Symposium On Industrial Electronics. 2: 370-373.  0.412
2000 McShane E, Shenai K. Microwave performance of power MOSFETs on SOI substrates Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 148-157.  0.427
2000 Shenai K, Neudeck PG. Performance evaluation of Silicon Carbide devices in power converters 35th Intersociety Energy Conversion Engineering Conference and Exhibit. 37-46.  0.456
2000 Abedinpour S, Trivedi M, Shenai K. DC-DC power converter for monolithic implementation Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 4: 2471-2475.  0.379
2000 Vijayalakshmi R, Trivedi M, Shenai K. Analytical model for power bipolar transistor in hard and soft-switching applications Ieee International Symposium On Industrial Electronics. 2: 374-378.  0.34
2000 McShane EA, Shenai K, Blaes B. A monolithic RF microsystem in SOI CMOS for low-power operation in radiation-intense environments Ieee Aerospace Conference Proceedings. 5: 421-429.  0.728
2000 Trivedi M, Shenai K, Neudeck PG. High-speed switching performance and buck converter operation of 4H-SiC diodes Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 69-78.  0.357
2000 Shenai K, Singh PJ, Rao S, Sorenson D, Chu K, Gaylon G. On the reliability of DC-DC power converters 35th Intersociety Energy Conversion Engineering Conference and Exhibit. 1480-1490.  0.33
2000 Vijayalakshmi R, Trivedi M, Shenai K. Impact of switching sequence on zero current switching performance of power bipolar semiconductor devices Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 2: 1109-1114.  0.393
1999 Trivedi M, Shenai K. Failure mechanisms of IGBT's under short-circuit and clamped inductive switching stress Ieee Transactions On Power Electronics. 14: 108-116. DOI: 10.1109/63.737598  0.573
1999 Khandelwal P, Trivedi M, Shenai K, Leong SK. Thermal and package performance limitations in LDMOSFET's for RFIC applications Ieee Transactions On Microwave Theory and Techniques. 47: 575-585. DOI: 10.1109/22.763158  0.379
1999 Trivedi M, Khandelwal P, Shenai K. Performance modeling of RF power MOSFET's Ieee Transactions On Electron Devices. 46: 1794-1802. DOI: 10.1109/16.777172  0.645
1999 Trivedi M, Shenai K. Internal dynamics of igbt under zerovoltage and zerocurrent switching conditions Ieee Transactions On Electron Devices. 46: 12741282. DOI: 10.1109/16.766898  0.552
1999 Trivedi M, Shenai K. Performance evaluation of high-power wide band-gap semiconductor rectifiers Journal of Applied Physics. 85: 6889-6897. DOI: 10.1063/1.370208  0.583
1999 Keskar N, Trivedi M, Shenai K. Device reliability and robust power converter development Microelectronics Reliability. 39: 1121-1130. DOI: 10.1016/S0026-2714(99)00159-6  0.465
1999 Keskar N, Trivedi M, Shenai K. On the reliability of DC-DC converters Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 3: 1639-1645.  0.4
1999 Keskar N, Trivedi M, Shenai K. Dynamic SOA of power MOSFETs Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 2: 1098-1102.  0.339
1999 Chinnaswamy K, Khandelwal P, Trivedi M, Shenai K. Unclamped inductive switching dynamics in lateral and vertical power DMOSFETs Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 2: 1085-1092.  0.39
1999 Keskar N, Vijayalakshmi R, Trivedi M, Shenai K, Neudeck P. Characterization and modeling of high voltage SiC PN diode Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 1: 346-352.  0.368
1999 McShane E, Shenai K, Alkalai L, Kolawa E, Boyadzhyan V, Blaes B, Fang WC. Monolithic microprocessor and RF transceiver in 0.25-micron FDSOI CMOS Proceedings of the Ieee Great Lakes Symposium On Vlsi. 332-333.  0.364
1999 Morkoç H, Cingolani R, Lambrecht W, Gil B, Jiang HX, Lin J, Pavlidis D, Shenai K. Material properties of GaN in the context of electron devices Mrs Internet Journal of Nitride Semiconductor Research. 4.  0.357
1999 Vijayalakshmi R, Shenai K. Characterization and physical modeling of power bipolar transistors in soft switching converters Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 2: 670-675.  0.424
1999 Khandelwal P, Chinnaswamy K, Shenai K. RF package characterization and modeling Biennial University/Government/Industry Microelectronics Symposium - Proceedings. 182-185.  0.412
1998 Morkoç H, Cingolani R, Lambrecht W, Gil B, Jiang H, Lin J, Pavlidis D, Shenai K. Material Properties of GaN in the Context of Electron Devices Mrs Proceedings. 537. DOI: 10.1557/S1092578300002209  0.459
1998 McShane EA, Shenai K, Alkalai L, Kolawa EA, Holmberg EA. Monolithic microprocessor and RF transceiver for low-power mobile applications Proceedings of Spie - the International Society For Optical Engineering. 3366: 20-28. DOI: 10.1117/12.317558  0.759
1998 Winterhalter C, Pendharkar S, Shenai K. A novel circuit for accurate characterization and modeling of the reverse recovery of high-power high-speed rectifiers Ieee Transactions On Power Electronics. 13: 924-931. DOI: 10.1109/63.712311  0.532
1998 Pendharkar S, Shenai K. Performance evaluation of high-power GaAs Schottky and silicon p-i-n rectifiers in hard- and soft-switching applications Ieee Transactions On Power Electronics. 13: 441-451. DOI: 10.1109/63.668105  0.555
1998 Trivedi M, Shenai K. IGET dynamics for clamped inductive switching Ieee Transactions On Electron Devices. 45: 2546-2548. DOI: 10.1109/16.735732  0.558
1998 Trivedi M, Shenai K. IGBT dynamics for clamped inductive switching Ieee Transactions On Electron Devices. 45: 2537-2545. DOI: 10.1109/16.735732  0.34
1998 Pendharkar S, Trivedi M, Shenai K. Electrothermal simulations in punchthrough and nonpunchthrough IGBT's Ieee Transactions On Electron Devices. 45: 2222-2231. DOI: 10.1109/16.725257  0.58
1998 Pendharkar S, Shenai K. Zero voltage switching behavior of punchthrough and nonpunchthrough insulated gate bipolar transistors (IGBT's) Ieee Transactions On Electron Devices. 45: 1826-1835. DOI: 10.1109/16.704385  0.385
1998 Perugupalli P, Trivedi M, Shenai K, Leong SK. Modeling and characterization of an 80 v silicon LDMOSFET for emerging RFIC applications Ieee Transactions On Electron Devices. 45: 1468-1478. DOI: 10.1109/16.701477  0.613
1998 Trivedi M, Shenai K. Investigation of the short-circuit performance of an IGBT Ieee Transactions On Electron Devices. 45: 313-320. DOI: 10.1109/16.658847  0.566
1998 McShane E, Trivedi M, Xu Y, Khandelwal P, Mulay A, Shenai K. One-chip wonders Ieee Circuits and Devices Magazine. 14: 35-42. DOI: 10.1109/101.721518  0.536
1998 Trivedi M, Shenai K. Current snap-back and negative differential resistance in layered PnνN structures Journal of Applied Physics. 84: 2091-2098. DOI: 10.1063/1.368356  0.49
1998 Trivedi M, Shenai K. Prospect of soft switching power converter technologies Ieee Conference Record of Power Modulator Symposium. 119-122.  0.445
1998 Mulay A, Trivedi M, Shenai K. Dynamic avalanching considerations in optimization of reverse conducting diode in IGBT modules Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 195-198.  0.399
1998 Vijayalakshmi R, Trivedi M, Shenai K. Improved charge-control models of power bipolar transistors Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 2: 1011-1015.  0.34
1998 Trivedi M, Pendharkar S, Shenai K. High temperature performance limits of IGBT modules Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 2: 977-981.  0.383
1998 Mulay A, Trivedi M, Shenai K. Impact of dynamic avalanching of reverse conducting diode in an IGBT module on optimum power converter design Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 2: 848-852.  0.468
1998 Vijayalakshmi R, Trivedi M, Shenai K. Power bipolar transistor performance in hard- and soft-switching power converters Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 2: 888-892.  0.441
1998 Mulay A, Trivedi M, Vijayalakshmi R, Shenai K. Switching dynamics of power bipolar transistor in high-frequency electronic ballast Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 3: 2130-2136.  0.465
1998 Trivedi M, Evazians R, Shenai K. Novel base drive circuit for accurate measurement and modeling of high-speed power bipolar transistors Conference Record - Ieee Instrumentation and Measurement Technology Conference. 1: 511-514.  0.433
1998 Trivedi M, Evazians R, Shenai K. Test circuits for characterizing power transistors in ZVS and ZCS circuits Conference Record - Ieee Instrumentation and Measurement Technology Conference. 1: 515-518.  0.449
1998 Perugupalli P, Xu Y, Shenai K. Measurement of thermal and packaging limitations in LDMOSFETs for RFIC applications Conference Record - Ieee Instrumentation and Measurement Technology Conference. 1: 160-164.  0.384
1998 Trivedi M, Vijayalakshmi R, Shenai K, Hesterman B. Improved capacitance model for power bipolar transistor turn-off performance Pesc Record - Ieee Annual Power Electronics Specialists Conference. 2: 1214-1218.  0.426
1998 Khandelwal P, Trivedi M, Shenai K. Thermal issues in LDMOSFET packages European Solid-State Device Research Conference. 556-559.  0.375
1997 Trivedi M, Shenai K. Modeling the turn-off of IGBT's in hard- and soft-switching applications Ieee Transactions On Electron Devices. 44: 887-893. DOI: 10.1109/16.568054  0.506
1997 Pendharkar S, Shenai K. Optimization of the anti-parallel diode in an igbt module for hard-s witching applications Ieee Transactions On Electron Devices. 44: 879-886. DOI: 10.1109/16.568053  0.364
1997 Fischer K, Shenai K. Electrothermal effects during undamped inductive switching (uis) of power MOSFET's Ieee Transactions On Electron Devices. 44: 874-878. DOI: 10.1109/16.568052  0.331
1997 Perugupalli P, Trivedi M, Shenai K, Leong SK. Modeling and characterization of 80 V LDMOSFET for RF communications Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 92-95.  0.407
1997 Perupalli P, Trivedi M, Shenai K, Leong SK. Performance evaluation of bulk Si and SOI RF LDMOSFETs for emerging RFIC applications Ieee International Soi Conference. 108-109.  0.414
1996 Li HH, Kutkut NH, Divan D, Shenai K. Design considerations of IGBT's in resonant converter applications Ieee Journal of Solid-State Circuits. 31: 97-104. DOI: 10.1109/4.485871  0.439
1996 Trivedi M, Pendharkar S, Shenai K. Switching characteristics of mct's and igbt's in power converters Ieee Transactions On Electron Devices. 43: 19942003. DOI: 10.1109/16.543038  0.532
1996 Fischer K, Shenai K. Dynamics of power MOSFET switching under undamped inductive loading conditions Ieee Transactions On Electron Devices. 43: 1007-1015. DOI: 10.1109/16.502137  0.523
1996 Pendharkar SP, Winterhalter CR, Shenai K. Modeling and characterization of the reverse recovery of a high-power GaAs Schottky diode Ieee Transactions On Electron Devices. 43: 685-690. DOI: 10.1109/16.491243  0.5
1996 Pendharkar SP, Trivedi M, Shenai K. Dynamics of reverse recovery of high-power P-i-N diodes Ieee Transactions On Electron Devices. 43: 142-149. DOI: 10.1109/16.477605  0.432
1996 Pendharkar S, Shenai K. High temperature performance of high-power GaAs Schottky and silicon P-i-N rectifiers in hard- and soft-switching power converters Proceedings of the Ieee International Conference On Power Electronics, Drives &Amp; Energy Systems For Industrial Growth, Pedes. 2: 981-985.  0.465
1996 Pendharkar S, Shenai K. Circuit simulation model for high-power high-speed GaAs Schottky diodes Conference Proceedings - Ieee Applied Power Electronics Conference and Exposition - Apec. 1: 246-249.  0.35
1996 Trivedi M, Li HH, Pendharkar S, Shenai K. Application of IGBT, MCT and EST in hard- and soft-switching power converters Proceedings of the Ieee International Conference On Power Electronics, Drives &Amp; Energy Systems For Industrial Growth, Pedes. 1: 201-205.  0.394
1995 Pendharkar SP, Winterhalter CR, Shenai K. A behavioral circuit simulation model for high-power GaAs Schottky diodes Ieee Transactions On Electron Devices. 42: 1847-1854. DOI: 10.1109/16.464410  0.447
1995 Fischer KJ, Shenai K. Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Scaled Vertical Power DMOSFET's Ieee Transactions On Electron Devices. 42: 555-563. DOI: 10.1109/16.368054  0.468
1995 Dallmann DA, Shenai K. Scaling constraints imposed by self-heating in submicron SOI MOSFET's Ieee Transactions On Electron Devices. 42: 489-496. DOI: 10.1109/16.368045  0.411
1995 Widjaja I, Kumia A, Shenai K, Divan DM. Switching Dynamics of IGBT's in Soft-Switching Converters Ieee Transactions On Electron Devices. 42: 445-454. DOI: 10.1109/16.368042  0.482
1995 Fischer K, Shenai K. Synchronous rectifier as a test circuit for high-frequency power MOSFET model verification Conference Record - Ias Annual Meeting (Ieee Industry Applications Society). 2: 1091-1097.  0.434
1995 Pendharkar S, Shenai K. Critique of the turn-on physics of power bipolar devices Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 209-212.  0.384
1995 Li HH, Shenai K. Simulation prototyping of high power modules Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 213-216.  0.435
1993 Shenai K. A novel trench planarization technique using polysilicon refill, polysilicon oxidation, and oxide etchback Ieee Transactions On Electron Devices. 40: 459-463. DOI: 10.1109/16.182530  0.324
1992 Shenai K. Optimized trench MOSFET technologies for power devices Ieee Transactions On Electron Devices. 39: 1435-1443. DOI: 10.1109/16.137324  0.412
1992 Shenai K. Optimum DMOS cell doping profiles for high-voltage discrete and integrated device technologies Ieee Transactions On Electron Devices. 39: 1255-1257. DOI: 10.1109/16.129120  0.43
1992 Shenai K. A high-density, self-aligned power MOSFET structure fabricated using sacrificial spacer technology Ieee Transactions On Electron Devices. 39: 1252-1255. DOI: 10.1109/16.129119  0.413
1991 Shenai K. Performance potential of low-voltage power MOSFETs in liquid-nitrogen-cooled power systems Ieee Transactions On Electron Devices. 38: 934-936. DOI: 10.1109/16.75228  0.452
1991 Smith GA, Shenai K, Piacente PA, Lewis N. The Role of SIMS and RBS Techniques in the Development of Advanced Metallization Systems for Microelectronic Applications Iete Journal of Research. 37: 235-241. DOI: 10.1080/03772063.1991.11436961  0.312
1991 Lewis N, Shenai K, Smith GA, Piacente PA. The Role of Transmission Electron Microscopy (TEM) in the Development of Advanced Metallization Systems Iete Journal of Research. 37: 223-234. DOI: 10.1080/03772063.1991.11436960  0.316
1991 Shenai K. An Overview of Metallization Technologies for High Voltage and Smart-Power Applications Iete Journal of Research. 37: 187-193. DOI: 10.1080/03772063.1991.11436954  0.523
1991 Shenai K. Nearly bird's beak-free local oxidation technology for controlled dielectric formation in deep silicon trenches Electronics Letters. 27: 637-639. DOI: 10.1049/El:19910400  0.34
1990 Shenai K. Gate-resistance-limited switching frequencies of power MOSFETs Ieee Electron Device Letters. 11: 544-546. DOI: 10.1109/55.63027  0.469
1990 Shenai K. Potential impact of emerging semiconductor technologies on advanced power electronic systems Ieee Electron Device Letters. 11: 520-522. DOI: 10.1109/55.63019  0.504
1990 Shenai K. Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications Ieee Transactions On Electron Devices. 37: 2207-2221. DOI: 10.1109/16.59911  0.479
1990 Shenai K, Baliga BJ. Monolithically Integrated Power Mosfet And Schottky Diode With Improved Reverse Recovery Characteristics Ieee Transactions On Electron Devices. 37: 1167-1169. DOI: 10.1109/16.52458  0.472
1989 Shenai K, Piacente PA, Saia R, Baliga BJ. Blanket LPCVD Tungsten Silicide Technology for Smart Power Applications Ieee Electron Device Letters. 10: 270-273. DOI: 10.1109/55.31743  0.501
1989 Piacente PA, Korman CS, Shenai K, Baliga BJ. High-Performance Vertical Power DMOSFET’s with Selectively Silicided Gate and Source Regions Ieee Electron Device Letters. 10: 153-155. DOI: 10.1109/55.31701  0.503
1989 Shenai K, Korman CS, Baliga BJ, Piacente PA. A 50-V, 0.7-m Omega *cm/sup 2/, vertical-power DMOSFET Ieee Electron Device Letters. 10: 101-103. DOI: 10.1109/55.31682  0.438
1989 Shenai K, Scott RS, Baliga BJ. Optimum semiconductors for high-power electronics Ieee Transactions On Electron Devices. 36: 1811-1823. DOI: 10.1109/16.34247  0.506
1989 Shenai K. High-frequency power MOSFETs fabricated using selectively deposited LPCVD tungsten Electronics Letters. 25: 1033-1034. DOI: 10.1049/El:19890690  0.394
1989 Shenai K, Piacente PA, Saia R, Korman CS, Baliga BJ. Selectively silicided vertical power DMOSFETs for high-frequency power conversion Electronics Letters. 25: 784-785. DOI: 10.1049/El:19890529  0.503
1988 Shenai K, Piacente PA, Lewis N, McConnell MD, Smith GA, Baliga BJ. On the Adhesion of LPCVD WSi2 to Doped and Undoped Polysilicon Mrs Proceedings. 119. DOI: 10.1557/Proc-119-177  0.327
1988 Shenai K, Piacente PA, Korman CS, Baliga BJ. Selectively silicided vertical power double‐diffused metal–oxide semiconductor field effect transistors for high‐frequency power switching applications Journal of Vacuum Science & Technology B. 6: 1740-1745. DOI: 10.1116/1.584170  0.514
1988 Shenai K. Formation and properties of rapid thermally annealed TiSi2 on lightly doped and heavily implanted silicon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6: 1728. DOI: 10.1116/1.584168  0.31
1988 Shenai K, Piacente PA, Saia R, Korman CS, Tantraporn W, Baliga BJ. Ultralow resistance, selectively silicided VDMOS FETs for high-frequency power switching applications fabricated using sidewall oxide spacer technology Ieee Transactions On Electron Devices. 35: 2459. DOI: 10.1109/16.8906  0.508
1988 Shenai K, Dutton RW. Channel-buffer (substrate) interface phenomena in GaAs MESFETs fabricated by molecular-beam epitaxy Ieee Transactions On Electron Devices. 35: 590-603. DOI: 10.1109/16.2501  0.364
1988 Shenai K, Dutton RW. Low-field electron transport mechanism in GaAs MESFETs Ieee Transactions On Electron Devices. 35: 578-589. DOI: 10.1109/16.2500  0.314
1988 Shenai K, Dutton RW. Current transport mechanisms in atomically abrupt metal-semiconductor interfaces Ieee Transactions On Electron Devices. 35: 468-482. DOI: 10.1109/16.2481  0.301
1987 Shenai K, Piacente PA, Baliga BJ. Electrical Characteristics of Tisi 2 /n + -Polysilicon/Sio 2 /Si Mos Capacitors Stressed Under High Temperature Silicide Processing Conditions Mrs Proceedings. 105: 295. DOI: 10.1557/Proc-105-295  0.307
1987 Shenai K. Characterization and Physics of Threshold Voltage Dependence on Defect Related Properties of Channel-Buffer (Substrate) Interfaces in GaAs MESFET's Fabricated By Molecular Beam Epitaxy Mrs Proceedings. 102: 191. DOI: 10.1557/Proc-102-191  0.326
1987 Shenai K. Very low resistance nonalloyed ohmic contacts to Sn-doped molecular-beam epitaxial GaAs Ieee Transactions On Electron Devices. 34: 1642-1649. DOI: 10.1109/T-Ed.1987.23132  0.303
1987 Eglash SJ, Newman N, Pan S, Mo D, Shenai K, Spicer WE, Ponce FA, Collins DM. Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights Journal of Applied Physics. 61: 5159-5169. DOI: 10.1063/1.338290  0.33
1985 Shenai K, Swanson RM, Saraswat KC, Dutton RW, Sangiorgi E. Modeling and Characterization of Dopant Redistributions in Metal and Silicide Contacts Ieee Transactions On Electron Devices. 32: 793-799. DOI: 10.1109/T-Ed.1985.22022  0.348
1984 Shenai K, Eglash SJ, Dutton RW, Zurakowski MP, Spicer WE. Field-enhanced tunneling and barrier lowering in Al—n + GaAs—nGaAs Schottky contacts grown by MBE Ieee Electron Device Letters. 5: 329-332. DOI: 10.1109/Edl.1984.25934  0.333
1984 Sangiorgi E, Shenai K, Saraswat KC, Swanson RM, Dutton RW. Accurate Barrier Modeling of Metal and Silicide Contacts Ieee Electron Device Letters. 5: 145-147. DOI: 10.1109/Edl.1984.25864  0.365
1983 Shenai K, Lin HC. Transient response of diffused junction capacitors Ieee Transactions On Electron Devices. 30: 1409-1411. DOI: 10.1109/T-Ed.1983.21311  0.355
1982 Shenai K, Lin HC. CAD MODELING OF DIFFUSED p‐n JUNCTIONS Compel-the International Journal For Computation and Mathematics in Electrical and Electronic Engineering. 1: 111-127. DOI: 10.1108/Eb009968  0.354
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