☰

Xiaochang Miao, Ph.D. - Publications

Affiliations: 
2013 University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Condensed Matter Physics, Electricity and Magnetism Physics, Materials Science Engineering
Tree Info Similar researchers PubMed Report error

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Liu Y, Miao X, Fang J, Zhang X, Chen S, Li W, Feng W, Chen Y, Wang W, Zhang Y. Layered-MnO2 nanosheet grown on nitrogen-doped-graphene template as a composite cathode for flexible solid-state asymmetric supercapacitor. Acs Applied Materials & Interfaces. PMID 26842681 DOI: 10.1021/Acsami.5B10649  0.422
2016 Jiang S, Zeng Y, Zhou W, Miao X, Yu Y. One-Minute Room-Temperature Transfer-Free Production of Mono- and Few-Layer Polycrystalline Graphene on Various Substrates. Scientific Reports. 6: 19313. PMID 26763292 DOI: 10.1038/srep19313  0.421
2012 Miao X, Tongay S, Hebard AF. Strain-induced suppression of weak localization in CVD-grown graphene. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 24: 475304. PMID 23123808 DOI: 10.1088/0953-8984/24/47/475304  0.613
2012 Miao X, Tongay S, Petterson MK, Berke K, Rinzler AG, Appleton BR, Hebard AF. High efficiency graphene solar cells by chemical doping. Nano Letters. 12: 2745-50. PMID 22554195 DOI: 10.1021/Nl204414U  0.634
2012 Tongay S, Lemaitre M, Miao X, Gila B, Appleton BR, Hebard AF. Rectification at graphene-semiconductor interfaces: Zero-gap semiconductor-based diodes Physical Review X. 2: 1-10. DOI: 10.1103/Physrevx.2.011002  0.646
2012 Miao X, Tongay S, Hebard AF. Extinction of ferromagnetism in highly ordered pyrolytic graphite by annealing Carbon. 50: 1614-1618. DOI: 10.1016/J.Carbon.2011.11.040  0.56
2011 Tongay S, Schumann T, Miao X, Appleton BR, Hebard AF. Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping Carbon. 49: 2033-2038. DOI: 10.1016/J.Carbon.2011.01.029  0.644
Show low-probability matches.